TWI627427B - Magnetic field sensing apparatus and detection method thereof - Google Patents
Magnetic field sensing apparatus and detection method thereof Download PDFInfo
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Abstract
一種磁場感測裝置及其磁場感測方法。磁場感測裝置包括異向性磁電阻磁場偵測器、參考磁場偵測器以及控制器。異向性磁電阻磁場偵測器依據受測磁場產生第一輸出電壓。參考磁場偵測器依據受測磁場產生第二輸出電壓。控制器依據第二輸出電壓以獲知受測磁場的磁場密度的絕對值是否大於或小於預設臨界值，並藉以選擇第一輸出電壓或飽和電壓來產生磁場偵測結果。A magnetic field sensing device and a magnetic field sensing method thereof. The magnetic field sensing device includes an anisotropic magnetoresistive magnetic field detector, a reference magnetic field detector, and a controller. The anisotropic magnetoresistive magnetic field detector generates a first output voltage according to the measured magnetic field. The reference magnetic field detector generates a second output voltage according to the measured magnetic field. The controller determines whether the absolute value of the magnetic field density of the measured magnetic field is greater than or less than a predetermined threshold according to the second output voltage, and thereby selecting the first output voltage or the saturation voltage to generate the magnetic field detection result.
Description
本發明是有關於一種磁場感測裝置以及磁場感測方法，且特別是有關於一種複合式的磁場感測裝置以及磁場感測方法。The present invention relates to a magnetic field sensing device and a magnetic field sensing method, and more particularly to a composite magnetic field sensing device and a magnetic field sensing method.
請參照圖1，圖1繪示異向性磁電阻（anisotropic magneto-resistive, AMR）偵測器依據受測磁場的磁場密度及產生的輸出電壓的關係曲線圖。其中，異向性磁電阻磁場偵測器可依據受測磁場的磁場密度大小而工作在線性區LR或是非線性區NL1、NL2。由圖1的繪示可以清楚的發現，異向性磁電阻磁場偵測器所產生的輸出電壓可能對應到多個磁場密度。以輸出電壓V1為範例，當異向性磁電阻磁場偵測器產生輸出電壓V1時，受測磁場的磁場密度可能是H1或也可能是H2而產生無法判定的現象，降低了磁場量測的準確性。Please refer to FIG. 1. FIG. 1 is a graph showing an anisotropic magneto-resistive (AMR) detector according to a magnetic field density of a measured magnetic field and an output voltage generated. Wherein, the anisotropic magnetoresistance magnetic field detector can work in the linear region LR or the nonlinear regions NL1, NL2 according to the magnetic field density of the measured magnetic field. It can be clearly seen from the drawing of Fig. 1 that the output voltage generated by the anisotropic magnetoresistive magnetic field detector may correspond to a plurality of magnetic field densities. Taking the output voltage V1 as an example, when the anisotropic magnetoresistive magnetic field detector generates the output voltage V1, the magnetic field density of the measured magnetic field may be H1 or H2, which may cause an undeterminable phenomenon, which reduces the measurement of the magnetic field. accuracy.
本發明提供一種磁場感測裝置以及磁場感測方法，以解決可能造成的磁場密度的誤判現象。The invention provides a magnetic field sensing device and a magnetic field sensing method to solve the misjudgment phenomenon of the magnetic field density that may be caused.
本發明的磁場感測裝置包括異向性磁電阻磁場偵測器、參考磁場偵測器以及控制器。異向性磁電阻磁場偵測器依據受測磁場產生第一輸出電壓。參考磁場偵測器依據受測磁場產生第二輸出電壓。控制器耦接異向性磁電阻磁場偵測器以及參考磁場偵測器，依據第二輸出電壓以獲知受測磁場的磁場密度的絕對值是否大於或小於預設臨界值，並藉以選擇第一輸出電壓或飽和電壓來產生磁場偵測結果。The magnetic field sensing device of the present invention includes an anisotropic magnetoresistive magnetic field detector, a reference magnetic field detector, and a controller. The anisotropic magnetoresistive magnetic field detector generates a first output voltage according to the measured magnetic field. The reference magnetic field detector generates a second output voltage according to the measured magnetic field. The controller is coupled to the anisotropic magnetoresistance magnetic field detector and the reference magnetic field detector, and according to the second output voltage, whether the absolute value of the magnetic field density of the measured magnetic field is greater than or less than a preset threshold value, and thereby selecting the first The output voltage or saturation voltage is used to generate a magnetic field detection result.
在本發明的一實施例中，上述的異向性磁電阻磁場偵測器依據受測磁場的磁場密度的絕對值以工作在線性區或非線性區，預設臨界值依據對應線性區以及非線性區間的臨界磁場密度值來設定。In an embodiment of the invention, the anisotropic magnetoresistive magnetic field detector operates in a linear region or a non-linear region according to an absolute value of a magnetic field density of the measured magnetic field, and the predetermined threshold value is determined according to the corresponding linear region and the non-linear region. The critical magnetic field density value of the linear interval is set.
在本發明的一實施例中，上述的預設臨界值等於臨界磁場密度值減去偏移值。In an embodiment of the invention, the predetermined threshold is equal to the critical magnetic field density value minus the offset value.
在本發明的一實施例中，當上述的受測磁場的磁場密度的絕對值大於或小於預設臨界值，控制器選擇第一輸出電壓以產生磁場偵測結果，當磁場的磁場密度的絕對值不大於或不小於預設臨界值，控制器選擇飽和電壓以產生磁場偵測結果。In an embodiment of the invention, when the absolute value of the magnetic field density of the measured magnetic field is greater than or less than a predetermined threshold, the controller selects the first output voltage to generate a magnetic field detection result when the magnetic field density of the magnetic field is absolute. The value is not greater than or less than the preset threshold, and the controller selects the saturation voltage to generate a magnetic field detection result.
在本發明的一實施例中，上述的控制器包括比較器以及選擇器。比較器接收第二輸出電壓以及臨界電壓，依據比較第二輸出電壓以及臨界電壓以產生比較結果信號。選擇器耦接比較器，接收第一輸出電壓以及飽和電壓，依據比較結果信號以選擇第二輸出電壓或飽和電壓以產生磁場偵測結果。其中，臨界電壓實質上等於參考磁場偵測器接收磁場密度絕對值等於預設臨界值的受測磁場時所產生的第二電壓的電壓值。In an embodiment of the invention, the controller includes a comparator and a selector. The comparator receives the second output voltage and the threshold voltage, and compares the second output voltage with the threshold voltage to generate a comparison result signal. The selector is coupled to the comparator, receives the first output voltage and the saturation voltage, and selects the second output voltage or the saturation voltage according to the comparison result signal to generate the magnetic field detection result. Wherein, the threshold voltage is substantially equal to the voltage value of the second voltage generated when the reference magnetic field detector receives the measured magnetic field whose absolute value of the magnetic field density is equal to the preset threshold value.
在本發明的一實施例中，當上述的第二輸出電壓大於或小於臨界電壓時，選擇器依據比較結果信號選擇飽和電壓以產生磁場偵測結果。In an embodiment of the invention, when the second output voltage is greater than or less than a threshold voltage, the selector selects a saturation voltage according to the comparison result signal to generate a magnetic field detection result.
在本發明的一實施例中，當上述的第二輸出電壓不大於或不小於臨界電壓時，選擇器依據比較結果信號選擇第一輸出電壓以產生磁場偵測結果。In an embodiment of the invention, when the second output voltage is not greater than or less than the threshold voltage, the selector selects the first output voltage according to the comparison result signal to generate a magnetic field detection result.
在本發明的一實施例中，上述的控制器包括比較器以及選擇器。比較器接收第二輸出電壓、第一臨界電壓以及第二臨界電壓，依據使第二輸出電壓與第一臨界電壓以及第二臨界電壓進行比較以產生比較結果信號。選擇器耦接比較器，接收第二輸出電壓以及飽和電壓，依據比較結果信號以選擇第二輸出電壓或飽和電壓以產生磁場偵測結果。其中，第一臨界電壓實質上等於參考磁場偵測器接收磁場密度等於預設臨界值的受測磁場時所產生的第二電壓的電壓值，第二臨界電壓實質上等於參考磁場偵測器接收磁場密度等於負預設臨界值的受測磁場時所產生的第二電壓的電壓值，預設臨界值為負預設臨界值的相反數。In an embodiment of the invention, the controller includes a comparator and a selector. The comparator receives the second output voltage, the first threshold voltage, and the second threshold voltage, and compares the second output voltage with the first threshold voltage and the second threshold voltage to generate a comparison result signal. The selector is coupled to the comparator, receives the second output voltage and the saturation voltage, and selects the second output voltage or the saturation voltage according to the comparison result signal to generate the magnetic field detection result. Wherein, the first threshold voltage is substantially equal to a voltage value of the second voltage generated when the reference magnetic field detector receives the measured magnetic field whose magnetic field density is equal to a preset threshold, and the second threshold voltage is substantially equal to the reference magnetic field detector receiving The voltage value of the second voltage generated when the magnetic field density is equal to the measured magnetic field of the negative preset threshold value, and the preset threshold value is the opposite of the negative preset threshold value.
在本發明的一實施例中，當上述的第二輸出電壓介於第一臨界電壓以及第二臨界電壓之間時，選擇器依據比較結果信號選擇第一輸出電壓以產生磁場偵測結果，其中當第二輸出電壓大於第一臨界電壓或小於第二臨界電壓時，選擇器依據比較結果信號選擇飽和電壓以產生磁場偵測結果。In an embodiment of the invention, when the second output voltage is between the first threshold voltage and the second threshold voltage, the selector selects the first output voltage according to the comparison result signal to generate a magnetic field detection result, wherein When the second output voltage is greater than the first threshold voltage or less than the second threshold voltage, the selector selects the saturation voltage according to the comparison result signal to generate a magnetic field detection result.
在本發明的一實施例中，上述的參考磁場偵測器為第二異向性磁電阻感測器、巨磁阻感測器、穿隧式磁阻感測器、磁阻感應感測器或霍爾測器。In an embodiment of the invention, the reference magnetic field detector is a second anisotropic magnetoresistive sensor, a giant magnetoresistive sensor, a tunneling magnetoresistive sensor, and a magnetoresistive sensing sensor. Or Hall detector.
本發明的磁場感測方法包括：提供異向性磁電阻磁場偵測器以依據受測磁場產生第一輸出電壓；提供參考磁場偵測器，依據受測磁場產生第二輸出電壓；以及，依據第二輸出電壓以獲知受測磁場的磁場密度的絕對值是否大於或小於預設臨界值，並藉以選擇第一輸出電壓或飽和電壓來產生磁場偵測結果。The magnetic field sensing method of the present invention comprises: providing an anisotropic magnetoresistance magnetic field detector to generate a first output voltage according to the measured magnetic field; providing a reference magnetic field detector to generate a second output voltage according to the measured magnetic field; The second output voltage is used to determine whether the absolute value of the magnetic field density of the measured magnetic field is greater than or less than a predetermined threshold, and thereby selecting the first output voltage or the saturation voltage to generate a magnetic field detection result.
基於上述，本發明透過參考磁場偵測器所產生的第二輸出電壓來判別受測磁場是否會使異向性磁電阻磁場偵測器工作在線性區，並且，在當異向性磁電阻磁場偵測器工作在線性區時，使異向性磁電阻磁場偵測器產生的第一輸出電壓為磁場偵測結果，而在當異向性磁電阻磁場偵測器工作在非線性區時，使一飽和電壓為磁場偵測結果。如此一來，依據磁場感測裝置所產生的磁場偵測結果來判讀的磁場密度不會發生誤判斷的現象，提升磁場偵測結果的準確性。Based on the above, the present invention determines whether the measured magnetic field causes the anisotropic magnetoresistive magnetic field detector to operate in the linear region by referring to the second output voltage generated by the magnetic field detector, and when the anisotropic magnetoresistive magnetic field When the detector operates in the linear region, the first output voltage generated by the anisotropic magnetoresistive magnetic field detector is the magnetic field detection result, and when the anisotropic magnetoresistive magnetic field detector operates in the nonlinear region, A saturation voltage is used to detect the magnetic field. In this way, according to the magnetic field detection result generated by the magnetic field sensing device, the magnetic field density is not misjudged, and the accuracy of the magnetic field detection result is improved.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
請參照圖2，圖2繪示本發明一實施例的磁場感測裝置的示意圖。磁場感測裝置200包括異向性磁電阻磁場偵測器210、參考磁場偵測器220以及控制器230。異向性磁電阻磁場偵測器210依據受測磁場以輸出電壓V1。參考磁場偵測器220則依據受測磁場產生輸出電壓V2。此外，控制器230耦接至異向性磁電阻磁場偵測器210以及參考磁場偵測器220以分別接收輸出電壓V1及V2。控制器230另接收飽和電壓VSAT。其中，控制器230依據輸出電壓V2以獲知受測磁場的磁場密度的絕對值是否大於一個預設臨界值。另外，控制器230並依據受測磁場的磁場密度的絕對值是否大於預設臨界值來選擇輸出電壓V1或飽和電壓VSAT以產生磁場偵測結果DR。Please refer to FIG. 2. FIG. 2 is a schematic diagram of a magnetic field sensing device according to an embodiment of the present invention. The magnetic field sensing device 200 includes an anisotropic magnetoresistive magnetic field detector 210, a reference magnetic field detector 220, and a controller 230. The anisotropic magnetoresistive field detector 210 outputs a voltage V1 in accordance with the measured magnetic field. The reference magnetic field detector 220 generates an output voltage V2 according to the measured magnetic field. In addition, the controller 230 is coupled to the anisotropic magnetoresistive field detector 210 and the reference magnetic field detector 220 to receive the output voltages V1 and V2, respectively. Controller 230 additionally receives a saturation voltage VSAT. The controller 230 determines whether the absolute value of the magnetic field density of the measured magnetic field is greater than a predetermined threshold according to the output voltage V2. In addition, the controller 230 selects the output voltage V1 or the saturation voltage VSAT according to whether the absolute value of the magnetic field density of the measured magnetic field is greater than a preset threshold to generate the magnetic field detection result DR.
具體來說明，當控制器230依據輸出電壓V2判斷出受測磁場的磁場密度的絕對值大於預設臨界值時，控制器230選擇飽和電壓VSAT來產生磁場偵測結果DR，相對的，當控制器230依據輸出電壓V2判斷出受測磁場的磁場密度的絕對值不大於預設臨界值時，控制器230選擇輸出電壓V1來產生磁場偵測結果DR。Specifically, when the controller 230 determines that the absolute value of the magnetic field density of the measured magnetic field is greater than a preset threshold according to the output voltage V2, the controller 230 selects the saturation voltage VSAT to generate the magnetic field detection result DR, and when controlled, When the absolute value of the magnetic field density of the measured magnetic field is not greater than the preset threshold according to the output voltage V2, the controller 230 selects the output voltage V1 to generate the magnetic field detection result DR.
關於上述的預設臨界值設定方法，請參照圖3繪示的預設臨界值的設定方式的示意圖。在圖3中，特性曲線310為異向性磁電阻磁場偵測器210所產生的輸出電壓V1與受測磁場的磁場密度的關係曲線。其中，異向性磁電阻磁場偵測器210可依據受測磁場的磁場密度而工作在線性區LR1、非線性區NL1或NL2。線性區LR1分別非線性區NL1或NL2的交界點發生在臨界磁場密度值HK以及-HK，臨界磁場密度值HK以及-HK並分別對應最大的輸出電壓VMAX以及最小的輸出電壓VMIN。預設臨界值則可依據臨界磁場密度值HK以及-HK來進行設定。For the preset threshold value setting method described above, please refer to the schematic diagram of the preset threshold value setting manner illustrated in FIG. 3 . In FIG. 3, the characteristic curve 310 is a relationship between the output voltage V1 generated by the anisotropic magnetoresistive field detector 210 and the magnetic field density of the magnetic field to be measured. The anisotropic magnetoresistive magnetic field detector 210 can operate in the linear region LR1, the nonlinear region NL1 or NL2 according to the magnetic field density of the measured magnetic field. The boundary points of the linear regions LR1 and the nonlinear regions NL1 or NL2 respectively occur at the critical magnetic field density values HK and -HK, the critical magnetic field density values HK and -HK and correspond to the maximum output voltage VMAX and the minimum output voltage VMIN, respectively. The preset threshold can be set according to the critical magnetic field density values HK and -HK.
在本發明一實施例中，預設臨界值則可依據臨界磁場密度值HK的絕對值來進行設置，其中，預設臨界值可以等於臨界磁場密度值HK的絕對值減去一個偏移值dH來設定。在圖3中，預設臨界值可以等於HK – dH，其中的臨界磁場密度值HK大於0且偏移值dH也大於0。換言之，當受測磁場的磁場密度介於磁場密度HTH以及-HTH間，表示受測磁場的磁場密度的絕對值不大於預設臨界值，而當受測磁場的磁場密度大於磁場密度HTH或小於磁場密度-HTH時，表示受測磁場的磁場密度的絕對值大於預設臨界值。In an embodiment of the invention, the preset threshold may be set according to the absolute value of the critical magnetic field density value HK, wherein the preset threshold may be equal to the absolute value of the critical magnetic field density value HK minus an offset value dH To set. In FIG. 3, the preset threshold may be equal to HK - dH, where the critical magnetic field density value HK is greater than 0 and the offset value dH is also greater than zero. In other words, when the magnetic field density of the measured magnetic field is between the magnetic field density HTH and -HTH, it means that the absolute value of the magnetic field density of the measured magnetic field is not greater than a preset threshold, and when the magnetic field density of the measured magnetic field is greater than the magnetic field density HTH or less When the magnetic field density - HTH, the absolute value of the magnetic field density of the measured magnetic field is greater than a preset threshold.
以下請參照圖4，圖4繪示本發明實施例的控制器的實施方式的示意圖。其中，控制器400包括比較器410以及選擇器420。比較器410接收臨界電壓VTH以及參考磁場偵測器所產生的輸出電壓V2，並使臨界電壓VTH以及輸出電壓V2進行比較以產生比較結果信號CR。選擇器420則耦接至比較器410，接收異向性磁電阻磁場偵測器所產生的輸出電壓V1、飽和電壓VSAT以及比較結果信號CR。選擇器420則依據比較結果信號CR來選擇輸出電壓V1或飽和電壓VSAT來產生磁場偵測結果DR。Please refer to FIG. 4, which is a schematic diagram of an embodiment of a controller according to an embodiment of the present invention. The controller 400 includes a comparator 410 and a selector 420. The comparator 410 receives the threshold voltage VTH and the output voltage V2 generated by the reference magnetic field detector, and compares the threshold voltage VTH and the output voltage V2 to generate a comparison result signal CR. The selector 420 is coupled to the comparator 410 and receives the output voltage V1, the saturation voltage VSAT, and the comparison result signal CR generated by the anisotropic magnetoresistive magnetic field detector. The selector 420 selects the output voltage V1 or the saturation voltage VSAT according to the comparison result signal CR to generate the magnetic field detection result DR.
關於臨界電壓VTH的設定方面，以下請同時請參照圖4以及圖5，其中，圖5繪示本發明一實施例的參考磁場偵測器特性曲線圖。在圖5中，特性曲線510對稱於縱軸的輸出電壓的電壓座標軸。對應圖3中用以設定預設臨界值的磁場密度HTH以及-HTH，特性曲線圖510對應磁場密度HTH以及-HTH的輸出電壓可設定為臨界電壓VTH。如此一來，比較器410可藉由比較參考磁場偵測器所產生的輸出電壓V2以及臨界電壓VTH的大小，便可獲知受測磁場的磁場密度的絕對值是否大於預設臨界值。也就是說，在本實施例中，當參考磁場偵測器所產生的輸出電壓V2不大於臨界電壓VTH時，表示受測磁場的磁場密度的絕對值大於預設臨界值，此時選擇器420依據所接收的比較結果信號CR選擇飽和電壓VSAT以產生磁場偵測結果DR。相對的，當參考磁場偵測器所產生的輸出電壓V2大於臨界電壓VTH時，表示受測磁場的磁場密度的絕對值小於預設臨界值，此時選擇器420依據所接收的比較結果信號CR選擇異向性磁電阻磁場偵測器產生的輸出電壓V1以產生磁場偵測結果DR。其中，飽和電壓VSAT的電壓值可設定為實質上等於異向性磁電阻磁場偵測器所可能產生的輸出電壓的最大值。For the setting of the threshold voltage VTH, please refer to FIG. 4 and FIG. 5 at the same time. FIG. 5 is a characteristic diagram of the reference magnetic field detector according to an embodiment of the present invention. In Figure 5, characteristic curve 510 is symmetric with respect to the voltage coordinate axis of the output voltage of the vertical axis. Corresponding to the magnetic field density HTH and -HTH for setting the preset threshold in FIG. 3, the output voltage of the characteristic map 510 corresponding to the magnetic field density HTH and -HTH can be set to the threshold voltage VTH. In this way, the comparator 410 can compare whether the absolute value of the magnetic field density of the measured magnetic field is greater than a preset threshold by comparing the magnitude of the output voltage V2 and the threshold voltage VTH generated by the reference magnetic field detector. That is, in the embodiment, when the output voltage V2 generated by the reference magnetic field detector is not greater than the threshold voltage VTH, the absolute value of the magnetic field density of the measured magnetic field is greater than a preset threshold, and the selector 420 is at this time. The saturation voltage VSAT is selected in accordance with the received comparison result signal CR to generate a magnetic field detection result DR. In contrast, when the output voltage V2 generated by the reference magnetic field detector is greater than the threshold voltage VTH, the absolute value of the magnetic field density of the measured magnetic field is less than a preset threshold. At this time, the selector 420 is based on the received comparison result signal CR. The output voltage V1 generated by the anisotropic magnetoresistive magnetic field detector is selected to generate a magnetic field detection result DR. Wherein, the voltage value of the saturation voltage VSAT can be set to be substantially equal to the maximum value of the output voltage that may be generated by the anisotropic magnetoresistive magnetic field detector.
附帶一提的，上述的比較器410以及選擇器420可以分別利用本領域具通常知識者所熟知的比較電路以及選擇器電路來建構，沒有固定的限制。Incidentally, the comparator 410 and the selector 420 described above can be constructed by using a comparison circuit and a selector circuit which are well known to those skilled in the art, respectively, without a fixed limitation.
在某些實施例中，參考磁場偵測器特性曲線圖可能與圖5的繪示相對稱於橫軸而具有負的峰值時。在這樣的條件下，當參考磁場偵測器所產生的輸出電壓V2不小於臨界電壓VTH時，表示受測磁場的磁場密度的絕對值大於預設臨界值，此時選擇器420依據所接收的比較結果信號CR選擇飽和電壓VSAT以產生磁場偵測結果DR。相對的，當參考磁場偵測器所產生的輸出電壓V2小於臨界電壓VTH時，表示受測磁場的磁場密度的絕對值小於預設臨界值，此時選擇器420依據所接收的比較結果信號CR選擇異向性磁電阻磁場偵測器產生的輸出電壓V1以產生磁場偵測結果DR。In some embodiments, the reference magnetic field detector characteristic map may have a negative peak relative to the depiction of FIG. 5 on the horizontal axis. Under such conditions, when the output voltage V2 generated by the reference magnetic field detector is not less than the threshold voltage VTH, the absolute value of the magnetic field density of the measured magnetic field is greater than a preset threshold, and the selector 420 is based on the received The comparison result signal CR selects the saturation voltage VSAT to generate the magnetic field detection result DR. In contrast, when the output voltage V2 generated by the reference magnetic field detector is less than the threshold voltage VTH, the absolute value of the magnetic field density of the measured magnetic field is less than a preset threshold. At this time, the selector 420 according to the received comparison result signal CR The output voltage V1 generated by the anisotropic magnetoresistive magnetic field detector is selected to generate a magnetic field detection result DR.
以下並請參照圖6，圖6繪示本發明另一實施例的參考磁場偵測器特性曲線圖。值得注意的，本發明並不限制於參考磁場偵測器的特性曲線如圖5所示。其中，具有如圖6的特性曲線610的參考磁場偵測器也可應用於本發明。對應圖3中用以設定預設臨界值的磁場密度HTH以及-HTH，特性曲線圖610對應磁場密度HTH以及-HTH的輸出電壓分別可設定為第一臨界電壓VTH1以及第二臨界電壓VTH2。而藉由判斷參考磁場偵測器所產生的輸出電壓V2是否介於第一臨界電壓VTH1以及第二臨界電壓VTH2間，可以獲知受測磁場的磁場密度的絕對值是否大於預設臨界值。具體來說明，當參考磁場偵測器所產生的輸出電壓V2介於第一臨界電壓VTH1以及第二臨界電壓VTH2間時，受測磁場的磁場密度的絕對值不大於預設臨界值，相對的，當參考磁場偵測器所產生的輸出電壓V2大於第一臨界電壓VTH1或小於第二臨界電壓VTH2間時，受測磁場的磁場密度的絕對值大於預設臨界值。Please refer to FIG. 6 below. FIG. 6 is a diagram showing a characteristic curve of a reference magnetic field detector according to another embodiment of the present invention. It should be noted that the present invention is not limited to the characteristic curve of the reference magnetic field detector as shown in FIG. 5. Among them, a reference magnetic field detector having a characteristic curve 610 as shown in FIG. 6 can also be applied to the present invention. Corresponding to the magnetic field density HTH and -HTH for setting the preset threshold in FIG. 3, the output voltages of the characteristic map 610 corresponding to the magnetic field density HTH and -HTH can be set to the first threshold voltage VTH1 and the second threshold voltage VTH2, respectively. By determining whether the output voltage V2 generated by the reference magnetic field detector is between the first threshold voltage VTH1 and the second threshold voltage VTH2, it can be known whether the absolute value of the magnetic field density of the measured magnetic field is greater than a preset threshold. Specifically, when the output voltage V2 generated by the reference magnetic field detector is between the first threshold voltage VTH1 and the second threshold voltage VTH2, the absolute value of the magnetic field density of the measured magnetic field is not greater than a preset threshold, and the relative When the output voltage V2 generated by the reference magnetic field detector is greater than the first threshold voltage VTH1 or less than the second threshold voltage VTH2, the absolute value of the magnetic field density of the measured magnetic field is greater than a preset threshold.
接著請參照圖7，圖7繪示本發明另一實施例的控制器的實施方式的示意圖。其中，控制器700對應圖6繪示的特性曲線610。控制器700包括比較器710以及選擇器720。比較器710接收第一臨界電壓VTH1、第二臨界電壓VTH2以及參考磁場偵測器所產生的輸出電壓V2。並依據比較輸出電壓V2與第一臨界電壓VTH1及第二臨界電壓VTH2來產生比較結果信號CR。選擇器720則可依據比較結果信號CR來選擇異向性磁電阻磁場偵測器產生的輸出電壓V1或飽和電壓VSAT來產生磁場偵測結果DR。Next, please refer to FIG. 7. FIG. 7 is a schematic diagram of an embodiment of a controller according to another embodiment of the present invention. The controller 700 corresponds to the characteristic curve 610 illustrated in FIG. 6 . The controller 700 includes a comparator 710 and a selector 720. The comparator 710 receives the first threshold voltage VTH1, the second threshold voltage VTH2, and the output voltage V2 generated by the reference magnetic field detector. And comparing the output voltage V2 with the first threshold voltage VTH1 and the second threshold voltage VTH2 to generate a comparison result signal CR. The selector 720 can select the output voltage V1 or the saturation voltage VSAT generated by the anisotropic magnetoresistive magnetic field detector according to the comparison result signal CR to generate the magnetic field detection result DR.
具體來說明，比較器710可包括兩個比較電路，其中之一的比較電路使輸出電壓V2與第一臨界電壓VTH1進行比較，而其中之另一的比較電路則使輸出電壓V2與第二臨界電壓VTH2進行比較。比較器710並針對兩個比較電路所產生的比較結果進行運算（例如邏輯運算）便可產生比較結果信號CR。在當輸出電壓V2介於第一臨界電壓VTH1與第二臨界電壓VTH2時，選擇器720可依據較結果信號CR選擇第一輸出電壓V1來產生磁場偵測結果DR。相對的，當輸出電壓V2非介於第一臨界電壓VTH1與第二臨界電壓VTH2（大於第一臨界電壓VTH1或小於第二臨界電壓VTH2）時，選擇器720可依據較結果信號CR選擇飽和電壓VSAT來產生磁場偵測結果DR。Specifically, the comparator 710 may include two comparison circuits, one of which compares the output voltage V2 with the first threshold voltage VTH1, and the other of which compares the output voltage V2 with the second threshold The voltage VTH2 is compared. The comparator 710 performs an operation (for example, a logic operation) on the comparison result generated by the two comparison circuits to generate a comparison result signal CR. When the output voltage V2 is between the first threshold voltage VTH1 and the second threshold voltage VTH2, the selector 720 may select the first output voltage V1 according to the comparison result signal CR to generate the magnetic field detection result DR. In contrast, when the output voltage V2 is not between the first threshold voltage VTH1 and the second threshold voltage VTH2 (greater than the first threshold voltage VTH1 or less than the second threshold voltage VTH2), the selector 720 can select the saturation voltage according to the comparison result signal CR. The VSAT generates a magnetic field detection result DR.
上述的比較器710以及選擇器720可以分別利用本領域具通常知識者所熟知的比較電路以及選擇器電路來建構，沒有固定的限制。The comparator 710 and the selector 720 described above can be constructed using comparison circuits and selector circuits well known to those skilled in the art, respectively, without fixed limitations.
依據圖4-圖7的實施方式可以得知，本發明的磁場感測裝置中的參考磁場偵測器的形式沒有固定的限制，其中，本發明實施例中的參考磁場偵測器可以為異向性磁電阻感測器、巨磁阻（GMR）感測器、穿隧式磁阻（TMR）感測器、磁阻感應（MI）感測器或霍爾（Hall）感測器。According to the embodiment of FIG. 4 to FIG. 7 , the form of the reference magnetic field detector in the magnetic field sensing device of the present invention has no fixed limitation, and the reference magnetic field detector in the embodiment of the present invention may be different. A directional magnetoresistive sensor, a giant magnetoresistance (GMR) sensor, a tunneling magnetoresistive (TMR) sensor, a magnetoresistive sensing (MI) sensor, or a Hall sensor.
以下請參照圖8，圖8繪示本發明一實施例的磁場感測方法的流程圖。其中，步驟S810提供異向性磁電阻磁場偵測器以依據受測磁場產生第一輸出電壓。並且，在步驟S820中提供參考磁場偵測器，以依據受測磁場產生第二輸出電壓。接著，步驟S830中依據第二輸出電壓以獲知受測磁場的磁場密度的絕對值是否大於預設臨界值，並藉以選擇第一輸出電壓或飽和電壓來產生磁場偵測結果。Please refer to FIG. 8. FIG. 8 is a flowchart of a magnetic field sensing method according to an embodiment of the present invention. Wherein, step S810 provides an anisotropic magnetoresistive magnetic field detector to generate a first output voltage according to the measured magnetic field. And, a reference magnetic field detector is provided in step S820 to generate a second output voltage according to the measured magnetic field. Next, in step S830, according to the second output voltage, it is determined whether the absolute value of the magnetic field density of the measured magnetic field is greater than a preset threshold, and the first output voltage or the saturation voltage is selected to generate the magnetic field detection result.
關於上述步驟的實施方式即實施細節，在前述的實施例及實施方式已有詳盡的說明，在此恕不多贅述。The implementation details of the above steps, that is, the implementation details, have been described in detail in the foregoing embodiments and embodiments, and will not be further described herein.
綜上所述，本發明的磁場感測裝置利用複合式的磁場感測架構，透過參考磁場偵測器來量測受測磁場的磁場密度，並依據磁場密度的大小，來選擇輸出異向性磁電阻磁場偵測器所產生的輸出電壓或固定電壓值的飽和電壓。如此一來，針對磁場感測裝置的磁場偵測結果進行判斷的動作上不會產生誤判斷的現象，可確定磁場偵測結果的準確性。In summary, the magnetic field sensing device of the present invention utilizes a composite magnetic field sensing architecture to measure the magnetic field density of the measured magnetic field through a reference magnetic field detector, and select an output anisotropy according to the magnitude of the magnetic field density. The output voltage generated by the magnetoresistive magnetic field detector or the saturation voltage of a fixed voltage value. In this way, the phenomenon that the magnetic field detection result of the magnetic field sensing device is judged does not cause erroneous judgment, and the accuracy of the magnetic field detection result can be determined.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
LR、LR1‧‧‧線性區
NL1、NL2‧‧‧非線性區
H1、H2‧‧‧磁場密度
200‧‧‧磁場感測裝置
210‧‧‧異向性磁電阻磁場偵測器
220‧‧‧參考磁場偵測器
230‧‧‧控制器
V1、V2、VMAX、VMIN‧‧‧輸出電壓
VSAT‧‧‧飽和電壓
DR‧‧‧磁場偵測結果
310、510、610‧‧‧特性曲線
HK、-HK‧‧‧臨界磁場密度值
dH‧‧‧偏移值
HTH、-HTH‧‧‧磁場密度
400、700‧‧‧控制器
410、710‧‧‧比較器
420、720‧‧‧選擇器
CR‧‧‧比較結果信號
VTH、VTH1、VTH2‧‧‧臨界電壓
S810~S830‧‧‧磁場感測方法的步驟LR, LR1‧‧‧ linear zone
NL1, NL2‧‧‧ non-linear zone
H1, H2‧‧‧ magnetic field density
200‧‧‧ Magnetic field sensing device
210‧‧‧ Anisotropic magnetoresistance magnetic field detector
220‧‧‧Reference magnetic field detector
230‧‧‧ Controller
V1, V2, VMAX, VMIN‧‧‧ output voltage
VSAT‧‧‧Saturation voltage
DR‧‧‧Magnetic field detection results
310, 510, 610‧‧‧ characteristic curve
HK, -HK‧‧‧critical magnetic field density values
dH‧‧‧ offset value
HTH, -HTH‧‧‧ magnetic field density
400, 700‧‧‧ controller
410, 710‧‧‧ comparator
420, 720‧‧‧ selector
CR‧‧‧ comparison result signal
VTH, VTH1, VTH2‧‧‧ threshold voltage
S810~S830‧‧‧Steps for magnetic field sensing method
圖1繪示異向性磁電阻磁場偵測器依據受測磁場的磁場密度及產生的輸出電壓的關係曲線圖。 圖2繪示本發明一實施例的磁場感測裝置的示意圖。 圖3繪示的預設臨界值的設定方式的示意圖。 圖4繪示本發明實施例的控制器的實施方式的示意圖。 圖5繪示本發明一實施例的參考磁場偵測器特性曲線圖。 圖6繪示本發明另一實施例的參考磁場偵測器特性曲線圖。 圖7繪示本發明另一實施例的控制器的實施方式的示意圖。 圖8繪示本發明一實施例的磁場感測方法的流程圖。FIG. 1 is a graph showing the relationship between the magnetic field density of the anisotropic magnetoresistive magnetic field detector and the generated output voltage according to the measured magnetic field. 2 is a schematic diagram of a magnetic field sensing device according to an embodiment of the invention. FIG. 3 is a schematic diagram showing a manner of setting a preset threshold. 4 is a schematic diagram of an embodiment of a controller in accordance with an embodiment of the present invention. FIG. 5 is a graph showing a characteristic of a reference magnetic field detector according to an embodiment of the invention. 6 is a graph showing a characteristic of a reference magnetic field detector according to another embodiment of the present invention. FIG. 7 is a schematic diagram of an embodiment of a controller according to another embodiment of the present invention. FIG. 8 is a flow chart of a magnetic field sensing method according to an embodiment of the invention.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI747285B (en) * | 2019-05-27 | 2021-11-21 | 愛盛科技股份有限公司 | Magnetic field sensing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201723525A (en) | 2017-07-01 |
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