ATE311958T1 - Artikel mit flixiertem schleifmittel zum verändern einer halbleiterscheibe - Google Patents

Artikel mit flixiertem schleifmittel zum verändern einer halbleiterscheibe

Info

Publication number
ATE311958T1
ATE311958T1 AT01948459T AT01948459T ATE311958T1 AT E311958 T1 ATE311958 T1 AT E311958T1 AT 01948459 T AT01948459 T AT 01948459T AT 01948459 T AT01948459 T AT 01948459T AT E311958 T1 ATE311958 T1 AT E311958T1
Authority
AT
Austria
Prior art keywords
article
fixed abrasive
modifying
semiconductor disc
abrasive
Prior art date
Application number
AT01948459T
Other languages
German (de)
English (en)
Inventor
Douglas P Goetz
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of ATE311958T1 publication Critical patent/ATE311958T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT01948459T 2001-02-15 2001-06-19 Artikel mit flixiertem schleifmittel zum verändern einer halbleiterscheibe ATE311958T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/784,667 US6632129B2 (en) 2001-02-15 2001-02-15 Fixed abrasive article for use in modifying a semiconductor wafer
PCT/US2001/019522 WO2002074490A1 (en) 2001-02-15 2001-06-19 Fixed abrasive article for use in modifying a semiconductor wafer

Publications (1)

Publication Number Publication Date
ATE311958T1 true ATE311958T1 (de) 2005-12-15

Family

ID=25133157

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01948459T ATE311958T1 (de) 2001-02-15 2001-06-19 Artikel mit flixiertem schleifmittel zum verändern einer halbleiterscheibe

Country Status (8)

Country Link
US (2) US6632129B2 (enExample)
EP (1) EP1360034B1 (enExample)
JP (1) JP2004524697A (enExample)
KR (1) KR100742794B1 (enExample)
CN (1) CN1289263C (enExample)
AT (1) ATE311958T1 (enExample)
DE (1) DE60115710T2 (enExample)
WO (1) WO2002074490A1 (enExample)

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CN100484718C (zh) * 2000-12-01 2009-05-06 东洋橡膠工业株式会社 研磨垫用缓冲层
US7070480B2 (en) * 2001-10-11 2006-07-04 Applied Materials, Inc. Method and apparatus for polishing substrates
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US6908366B2 (en) 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
KR100504941B1 (ko) * 2003-05-09 2005-08-02 매그나칩 반도체 유한회사 화학적 기계적 연마 장치
US6997777B2 (en) * 2003-06-17 2006-02-14 Cabot Microelectronics Corporation Ultrasonic welding method for the manufacture of a polishing pad comprising an optically transmissive region
US7435161B2 (en) * 2003-06-17 2008-10-14 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US6884156B2 (en) * 2003-06-17 2005-04-26 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
JP4484466B2 (ja) * 2003-07-10 2010-06-16 パナソニック株式会社 研磨方法およびその研磨方法に用いる粘弾性ポリッシャー
US7160178B2 (en) * 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
US20050054277A1 (en) * 2003-09-04 2005-03-10 Teng-Chun Tsai Polishing pad and method of polishing wafer
US8066552B2 (en) 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US7654885B2 (en) * 2003-10-03 2010-02-02 Applied Materials, Inc. Multi-layer polishing pad
DE102004007747B3 (de) * 2004-02-18 2004-12-23 Jöst, Peter Schleifbandträger und Schleifbandanordnung
US6951509B1 (en) * 2004-03-09 2005-10-04 3M Innovative Properties Company Undulated pad conditioner and method of using same
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US20050227590A1 (en) * 2004-04-09 2005-10-13 Chien-Min Sung Fixed abrasive tools and associated methods
US8075372B2 (en) * 2004-09-01 2011-12-13 Cabot Microelectronics Corporation Polishing pad with microporous regions
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US7875091B2 (en) * 2005-02-22 2011-01-25 Saint-Gobain Abrasives, Inc. Rapid tooling system and methods for manufacturing abrasive articles
US7867302B2 (en) * 2005-02-22 2011-01-11 Saint-Gobain Abrasives, Inc. Rapid tooling system and methods for manufacturing abrasive articles
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
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US20070066186A1 (en) * 2005-09-22 2007-03-22 3M Innovative Properties Company Flexible abrasive article and methods of making and using the same
US7618306B2 (en) * 2005-09-22 2009-11-17 3M Innovative Properties Company Conformable abrasive articles and methods of making and using the same
US20070197147A1 (en) * 2006-02-15 2007-08-23 Applied Materials, Inc. Polishing system with spiral-grooved subpad
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KR20100093537A (ko) * 2007-10-31 2010-08-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 웨이퍼를 폴리싱하기 위한 조성물, 방법 및 공정
CN102089122A (zh) * 2008-05-15 2011-06-08 3M创新有限公司 具有终点窗口的抛光垫以及使用其的系统和方法
WO2009158665A1 (en) * 2008-06-26 2009-12-30 3M Innovative Properties Company Polishing pad with porous elements and method of making and using the same
US8662962B2 (en) * 2008-06-30 2014-03-04 3M Innovative Properties Company Sandpaper with non-slip coating layer and method of using
JP5809053B2 (ja) * 2008-07-03 2015-11-10 スリーエム イノベイティブ プロパティズ カンパニー 固定研磨粒子及びそれから作製される物品
KR20110033277A (ko) * 2008-07-18 2011-03-30 쓰리엠 이노베이티브 프로퍼티즈 캄파니 플로팅 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법과 이용 방법
KR101007134B1 (ko) 2009-06-05 2011-01-10 엘지이노텍 주식회사 조명 장치
DE102009030294B4 (de) * 2009-06-24 2013-04-25 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe
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KR20120112662A (ko) * 2009-12-30 2012-10-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 유기 미립자 로딩된 폴리싱 패드 및 이를 제조 및 사용하는 방법
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JP2014508650A (ja) * 2011-01-26 2014-04-10 スリーエム イノベイティブ プロパティズ カンパニー 複製されたミクロ構造を有する裏材を備える研磨物品、及びこれを使用する方法
CN102672548A (zh) * 2011-11-08 2012-09-19 刘广庆 一种有机涂层研磨工艺
US9649742B2 (en) * 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
JP6279309B2 (ja) * 2013-12-20 2018-02-14 スリーエム イノベイティブ プロパティズ カンパニー 研磨用クッション、研磨装置、研磨方法、及び当該研磨方法により研磨された対象物を含む物品
JP6838811B2 (ja) 2014-05-02 2021-03-03 スリーエム イノベイティブ プロパティズ カンパニー 断続的構造化研磨物品並びに被加工物の研磨方法
SG11201609296XA (en) * 2014-05-21 2016-12-29 Fujibo Holdings Inc Polishing pad and method for manufacturing the same
CN106181652A (zh) * 2015-05-08 2016-12-07 蓝思科技股份有限公司 磨机的磨皮开槽方法及修复弯片玻璃的方法
WO2017119339A1 (ja) * 2016-01-08 2017-07-13 バンドー化学株式会社 研磨材
US10259099B2 (en) * 2016-08-04 2019-04-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tapering method for poromeric polishing pad
US10864612B2 (en) * 2016-12-14 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing pad and method of using
TWI621501B (zh) * 2017-01-06 2018-04-21 三芳化學工業股份有限公司 研磨墊及研磨裝置
JP6883475B2 (ja) * 2017-06-06 2021-06-09 株式会社荏原製作所 研磨テーブル及びこれを備える研磨装置
NL2023127A (en) * 2018-05-22 2019-11-28 Asml Holding Nv Apparatus for and method of in situ clamp surface roughening
US11331767B2 (en) 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
JP7538397B2 (ja) * 2020-03-23 2024-08-22 富士紡ホールディングス株式会社 研磨パッド

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Also Published As

Publication number Publication date
EP1360034B1 (en) 2005-12-07
CN1289263C (zh) 2006-12-13
KR100742794B1 (ko) 2007-07-25
WO2002074490A1 (en) 2002-09-26
US6632129B2 (en) 2003-10-14
JP2004524697A (ja) 2004-08-12
KR20030077622A (ko) 2003-10-01
EP1360034A1 (en) 2003-11-12
DE60115710D1 (de) 2006-01-12
US20040072506A1 (en) 2004-04-15
DE60115710T2 (de) 2006-08-31
US20020111120A1 (en) 2002-08-15
US7329171B2 (en) 2008-02-12
CN1489508A (zh) 2004-04-14

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