ATE309634T1 - Verfahren zur herstellung quantum dots für langwelliger betrieb - Google Patents

Verfahren zur herstellung quantum dots für langwelliger betrieb

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Publication number
ATE309634T1
ATE309634T1 AT03732644T AT03732644T ATE309634T1 AT E309634 T1 ATE309634 T1 AT E309634T1 AT 03732644 T AT03732644 T AT 03732644T AT 03732644 T AT03732644 T AT 03732644T AT E309634 T1 ATE309634 T1 AT E309634T1
Authority
AT
Austria
Prior art keywords
quantum dots
layer
active layer
active
spacer
Prior art date
Application number
AT03732644T
Other languages
English (en)
Inventor
Timothy Simon Jones
Patrick Howe
Ray Murray
Ru Eric Le
Original Assignee
Imp College Innovations Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imp College Innovations Ltd filed Critical Imp College Innovations Ltd
Application granted granted Critical
Publication of ATE309634T1 publication Critical patent/ATE309634T1/de

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122Single quantum well structures
    • H01L29/127Quantum box structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02458Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02463Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366(In)GaAs with small amount of N
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/962Quantum dots and lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT03732644T 2002-05-24 2003-05-19 Verfahren zur herstellung quantum dots für langwelliger betrieb ATE309634T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0212055A GB2388957A (en) 2002-05-24 2002-05-24 Quantum dots for extended wavelength operation
PCT/GB2003/002152 WO2003100833A2 (en) 2002-05-24 2003-05-19 Method of forming quantum dots for extended wavelength operation

Publications (1)

Publication Number Publication Date
ATE309634T1 true ATE309634T1 (de) 2005-11-15

Family

ID=9937401

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03732644T ATE309634T1 (de) 2002-05-24 2003-05-19 Verfahren zur herstellung quantum dots für langwelliger betrieb

Country Status (10)

Country Link
US (1) US7160822B2 (de)
EP (1) EP1508189B1 (de)
JP (1) JP2005534164A (de)
CN (1) CN100375353C (de)
AT (1) ATE309634T1 (de)
AU (1) AU2003239674A1 (de)
DE (1) DE60302246T2 (de)
ES (1) ES2253678T3 (de)
GB (1) GB2388957A (de)
WO (1) WO2003100833A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2409334A (en) * 2003-12-20 2005-06-22 Agilent Technologies Inc Quantum dot structure having GaAs layers formed at varying partial pressures
US7749787B2 (en) * 2004-12-08 2010-07-06 Electronics And Telecommunications Research Institute Method for forming quantum dots by alternate growth process
CN100511734C (zh) * 2005-08-31 2009-07-08 中国科学院半导体研究所 1.02-1.08微米波段InGaAs/GaAs量子点外延结构及其制造方法
CN100487864C (zh) * 2006-01-26 2009-05-13 中国科学院半导体研究所 宽光谱砷化铟/砷化铟镓/砷化镓量子点材料生长方法
WO2009116153A1 (ja) * 2008-03-19 2009-09-24 富士通株式会社 半導体発光素子及びその製造方法
US7842595B2 (en) * 2009-03-04 2010-11-30 Alcatel-Lucent Usa Inc. Fabricating electronic-photonic devices having an active layer with spherical quantum dots
US20140175287A1 (en) * 2012-12-21 2014-06-26 Jarrod Vaillancourt Optical Antenna Enhanced Infrared Detector
CN103137789A (zh) * 2013-01-28 2013-06-05 中国科学院半导体研究所 制备低密度、长波长InAs/GaAs 量子点的方法
US9240449B2 (en) * 2014-05-26 2016-01-19 Yu-chen Chang Zero-dimensional electron devices and methods of fabricating the same
DE102016110041A1 (de) * 2016-05-31 2017-11-30 Osram Opto Semiconductors Gmbh Bauelement zum Detektieren von UV-Strahlung und Verfahren zur Herstellung eines Bauelements
CN109038220A (zh) * 2018-08-16 2018-12-18 海南师范大学 一种长波长InGaAs量子点结构及其制备方法
CN112262398B (zh) * 2018-11-19 2024-05-24 谷歌有限责任公司 通过双局域哈密顿量控制的三量子比特纠缠门
CN110768104A (zh) * 2019-12-02 2020-02-07 中山德华芯片技术有限公司 长波长GaInNAs/InGaAs复合量子点垂直腔面发射激光器

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EP0665578B1 (de) * 1993-11-25 2002-02-20 Nippon Telegraph And Telephone Corporation Halbleiterstruktur und Herstellungsverfahren
JP3672678B2 (ja) * 1996-04-05 2005-07-20 富士通株式会社 量子半導体装置およびその製造方法
US5888885A (en) * 1997-05-14 1999-03-30 Lucent Technologies Inc. Method for fabricating three-dimensional quantum dot arrays and resulting products
JP4138930B2 (ja) * 1998-03-17 2008-08-27 富士通株式会社 量子半導体装置および量子半導体発光装置
CA2268997C (en) * 1998-05-05 2005-03-22 National Research Council Of Canada Quantum dot infrared photodetectors (qdip) and methods of making the same
US6507042B1 (en) * 1998-12-25 2003-01-14 Fujitsu Limited Semiconductor device and method of manufacturing the same
JP2000196193A (ja) * 1998-12-25 2000-07-14 Fujitsu Ltd 半導体装置及びその製造方法
KR100319300B1 (ko) * 2000-03-23 2002-01-04 윤종용 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US6816525B2 (en) * 2000-09-22 2004-11-09 Andreas Stintz Quantum dot lasers
US6600169B2 (en) * 2000-09-22 2003-07-29 Andreas Stintz Quantum dash device
JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
SG98018A1 (en) * 2000-12-08 2003-08-20 Inst Materials Research & Eng A method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure
JP2002184970A (ja) * 2000-12-15 2002-06-28 Fujitsu Ltd 量子ドットを含む半導体装置、その製造方法及び半導体レーザ装置
GB2373371A (en) * 2001-03-17 2002-09-18 Agilent Technologies Inc Quantum dot laser structure
US6645885B2 (en) * 2001-09-27 2003-11-11 The National University Of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
JP4041877B2 (ja) * 2001-12-27 2008-02-06 国立大学法人 筑波大学 半導体装置
JP3868353B2 (ja) * 2002-08-27 2007-01-17 富士通株式会社 量子ドットを有する半導体光装置

Also Published As

Publication number Publication date
ES2253678T3 (es) 2006-06-01
DE60302246D1 (de) 2005-12-15
EP1508189A2 (de) 2005-02-23
GB0212055D0 (en) 2002-07-03
CN1656658A (zh) 2005-08-17
JP2005534164A (ja) 2005-11-10
WO2003100833A3 (en) 2004-11-11
AU2003239674A1 (en) 2003-12-12
DE60302246T2 (de) 2006-08-03
US20050227386A1 (en) 2005-10-13
US7160822B2 (en) 2007-01-09
GB2388957A (en) 2003-11-26
AU2003239674A8 (en) 2003-12-12
WO2003100833A2 (en) 2003-12-04
CN100375353C (zh) 2008-03-12
EP1508189B1 (de) 2005-11-09

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