ATE291731T1 - Schichtdickenmessung mittels inelastischer elektronenstreuung - Google Patents

Schichtdickenmessung mittels inelastischer elektronenstreuung

Info

Publication number
ATE291731T1
ATE291731T1 AT00943069T AT00943069T ATE291731T1 AT E291731 T1 ATE291731 T1 AT E291731T1 AT 00943069 T AT00943069 T AT 00943069T AT 00943069 T AT00943069 T AT 00943069T AT E291731 T1 ATE291731 T1 AT E291731T1
Authority
AT
Austria
Prior art keywords
thickness
substrate
test
electrons
layer thickness
Prior art date
Application number
AT00943069T
Other languages
English (en)
Inventor
Leonid A Vasilyev
Charles E Bryson Iii
Robert Linder
Sergey Borodyansky
Yachko Dmitri Ki
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co filed Critical Fei Co
Application granted granted Critical
Publication of ATE291731T1 publication Critical patent/ATE291731T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Extrusion Moulding Of Plastics Or The Like (AREA)
AT00943069T 1999-07-09 2000-06-22 Schichtdickenmessung mittels inelastischer elektronenstreuung ATE291731T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/350,701 US6399944B1 (en) 1999-07-09 1999-07-09 Measurement of film thickness by inelastic electron scattering
PCT/US2000/017234 WO2001004574A1 (en) 1999-07-09 2000-06-22 Measurement of film thickness by inelastic electron scattering

Publications (1)

Publication Number Publication Date
ATE291731T1 true ATE291731T1 (de) 2005-04-15

Family

ID=23377837

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00943069T ATE291731T1 (de) 1999-07-09 2000-06-22 Schichtdickenmessung mittels inelastischer elektronenstreuung

Country Status (8)

Country Link
US (1) US6399944B1 (de)
EP (1) EP1192416B1 (de)
JP (1) JP2003504609A (de)
AT (1) ATE291731T1 (de)
AU (1) AU5759400A (de)
DE (1) DE60018932T2 (de)
TW (1) TW457362B (de)
WO (1) WO2001004574A1 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635869B2 (en) * 2001-02-26 2003-10-21 Fei Company Step function determination of Auger peak intensity
US6781126B2 (en) * 2002-02-04 2004-08-24 Applied Materials, Inc. Auger-based thin film metrology
AU2003299965A1 (en) * 2002-12-27 2004-07-29 Physical Electronics, Inc. Nondestructive characterization of thin films using measured basis spectra and/or based on acquired spectrum
US6891158B2 (en) * 2002-12-27 2005-05-10 Revera Incorporated Nondestructive characterization of thin films based on acquired spectrum
JP4344197B2 (ja) * 2003-08-26 2009-10-14 パナソニック株式会社 絶縁膜測定装置、絶縁膜測定方法及び絶縁膜評価装置
CN101091101A (zh) * 2004-12-27 2007-12-19 新科实业有限公司 通过俄歇电子能谱测量纳米薄膜厚度的方法
CN100592028C (zh) * 2005-01-07 2010-02-24 精工电子纳米科技有限公司 薄膜样品测量方法和设备及薄膜样品制备方法和设备
US7420163B2 (en) * 2005-04-29 2008-09-02 Revera Incorporated Determining layer thickness using photoelectron spectroscopy
US7231324B2 (en) * 2005-04-29 2007-06-12 Revera Incorporated Techniques for analyzing data generated by instruments
US7411188B2 (en) 2005-07-11 2008-08-12 Revera Incorporated Method and system for non-destructive distribution profiling of an element in a film
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
EP2674513B1 (de) 2009-05-13 2018-11-14 SiO2 Medical Products, Inc. Gefäßbeschichtung und -prüfung
US7985188B2 (en) 2009-05-13 2011-07-26 Cv Holdings Llc Vessel, coating, inspection and processing apparatus
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US8581602B2 (en) 2009-09-02 2013-11-12 Systems And Materials Research Corporation Method and apparatus for nondestructive measuring of a coating thickness on a curved surface
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
WO2011162411A1 (ja) * 2010-06-25 2011-12-29 日本電気株式会社 ２次元薄膜原子構造の層数決定方法および２次元薄膜原子構造の層数決定装置
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US8853078B2 (en) 2011-01-30 2014-10-07 Fei Company Method of depositing material
US9090973B2 (en) 2011-01-31 2015-07-28 Fei Company Beam-induced deposition of low-resistivity material
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
CN103930595A (zh) 2011-11-11 2014-07-16 Sio2医药产品公司 用于药物包装的钝化、pH保护性或润滑性涂层、涂布方法以及设备
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
US8658973B2 (en) * 2012-06-12 2014-02-25 Kla-Tencor Corporation Auger elemental identification algorithm
KR101241007B1 (ko) * 2012-10-26 2013-03-11 나노씨엠에스(주) 엑스선을 이용한 박막층의 두께 측정 방법 및 장치
WO2014071061A1 (en) 2012-11-01 2014-05-08 Sio2 Medical Products, Inc. Coating inspection method
EP2920567B1 (de) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Verfahren und vorrichtung zur erkennung von schnellen sperrbeschichtungsintegritätseigenschaften
WO2014085346A1 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Hollow body with inside coating
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
WO2014134577A1 (en) 2013-03-01 2014-09-04 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
WO2014164928A1 (en) 2013-03-11 2014-10-09 Sio2 Medical Products, Inc. Coated packaging
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
WO2014144926A1 (en) 2013-03-15 2014-09-18 Sio2 Medical Products, Inc. Coating method
CN103713002B (zh) * 2013-12-27 2016-04-27 昆明贵研催化剂有限责任公司 一种测定汽车尾气催化剂涂层厚度的方法
US11066745B2 (en) 2014-03-28 2021-07-20 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
EP3104155A1 (de) 2015-06-09 2016-12-14 FEI Company Verfahren zur analyse von oberflächenmodifikationen einer probe in eines ladungsträger-mikroskop
CA3204930A1 (en) 2015-08-18 2017-02-23 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
US9837246B1 (en) 2016-07-22 2017-12-05 Fei Company Reinforced sample for transmission electron microscope
DE112017007508T5 (de) * 2017-06-13 2020-03-19 Hitachi High-Technologies Corporation Ladungsteilchenstrahlvorrichtung und Verfahren zur Messung der Probendicke
US10895541B2 (en) * 2018-01-06 2021-01-19 Kla-Tencor Corporation Systems and methods for combined x-ray reflectometry and photoelectron spectroscopy
DE102018202985A1 (de) 2018-02-28 2018-04-12 Carl Zeiss Smt Gmbh Verfahren zum Bestimmen einer Ablösewahrscheinlichkeit einer Schicht
CN114046736B (zh) * 2021-11-09 2023-02-28 北京理工大学 一种基于泵浦探测分析确定金属电子弹道深度的方法
CN114923938A (zh) * 2022-05-24 2022-08-19 长江存储科技有限责任公司 样品的表征方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2611411C3 (de) 1976-03-18 1980-07-17 Helmut Fischer Gmbh & Co Institut Fuer Elektronik Und Messtechnik, 7032 Sindelfingen Vorrichtung zum Messen der Dicke von Schichten mit einem die Schicht bestrahlenden Radionuklid
GB2054136B (en) 1979-07-19 1983-06-29 Fischer H Apparatus for measuring the thickness of thin layers
JPH0766507B2 (ja) * 1984-02-16 1995-07-19 コニカ株式会社 磁気記録媒体
US5594245A (en) * 1990-10-12 1997-01-14 Hitachi, Ltd. Scanning electron microscope and method for dimension measuring by using the same
US5280176A (en) 1992-11-06 1994-01-18 The United States Of America As Represented By The Secretary Of Commerce X-ray photoelectron emission spectrometry system
US5924058A (en) * 1997-02-14 1999-07-13 Applied Materials, Inc. Permanently mounted reference sample for a substrate measurement tool
US6067154A (en) * 1998-10-23 2000-05-23 Advanced Micro Devices, Inc. Method and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopy

Also Published As

Publication number Publication date
AU5759400A (en) 2001-01-30
TW457362B (en) 2001-10-01
WO2001004574A1 (en) 2001-01-18
JP2003504609A (ja) 2003-02-04
EP1192416A1 (de) 2002-04-03
DE60018932D1 (de) 2005-04-28
EP1192416B1 (de) 2005-03-23
US6399944B1 (en) 2002-06-04
DE60018932T2 (de) 2006-03-30

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