ATE213513T1 - Herstellung von übergangsmetallkarbid-, übergangsmetallnitrid- und übergangsmetallkarbonitridwhiskern - Google Patents
Herstellung von übergangsmetallkarbid-, übergangsmetallnitrid- und übergangsmetallkarbonitridwhiskernInfo
- Publication number
- ATE213513T1 ATE213513T1 AT96850131T AT96850131T ATE213513T1 AT E213513 T1 ATE213513 T1 AT E213513T1 AT 96850131 T AT96850131 T AT 96850131T AT 96850131 T AT96850131 T AT 96850131T AT E213513 T1 ATE213513 T1 AT E213513T1
- Authority
- AT
- Austria
- Prior art keywords
- transition metal
- carbide
- nitride
- whiskers
- production
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
- Y10S977/776—Ceramic powder or flake
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/90—Manufacture, treatment, or detection of nanostructure having step or means utilizing mechanical or thermal property, e.g. pressure, heat
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Fibers (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/504,779 US5795384A (en) | 1995-07-20 | 1995-07-20 | Manufacture of transition metal carbide nitride or carbonitride whiskers |
SE9504626A SE9504626D0 (sv) | 1995-12-22 | 1995-12-22 | Manufacture of transition metal carbide, nitride and carbonitride whiskers |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE213513T1 true ATE213513T1 (de) | 2002-03-15 |
Family
ID=26662463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT96850131T ATE213513T1 (de) | 1995-07-20 | 1996-07-04 | Herstellung von übergangsmetallkarbid-, übergangsmetallnitrid- und übergangsmetallkarbonitridwhiskern |
Country Status (6)
Country | Link |
---|---|
US (1) | US5853477A (de) |
EP (1) | EP0754783B1 (de) |
JP (1) | JPH09124399A (de) |
AT (1) | ATE213513T1 (de) |
DE (1) | DE69619312T2 (de) |
IL (1) | IL118793A0 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010132552A (ja) * | 2010-01-27 | 2010-06-17 | Lucelabo:Kk | 遷移金属窒化物の製造方法 |
US11033888B2 (en) * | 2017-08-30 | 2021-06-15 | Uchicago Argonne, Llc | Nanofiber electrocatalyst |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3754076A (en) * | 1970-10-30 | 1973-08-21 | Univ Utah | Production of silicon carbide from rice hulls |
US4283375A (en) * | 1980-01-28 | 1981-08-11 | Great Lakes Carbon Corporation | Production of SiC whiskers |
US4248844A (en) * | 1980-01-28 | 1981-02-03 | Great Lakes Carbon Corporation | Production of SiC from rice hulls and silica |
US4284612A (en) * | 1980-01-28 | 1981-08-18 | Great Lakes Carbon Corporation | Preparation of SiC whiskers |
JPS6122000A (ja) * | 1984-07-06 | 1986-01-30 | Kanebo Ltd | 炭化珪素ウイスカ−の製造法 |
JPS62260797A (ja) * | 1986-05-06 | 1987-11-13 | Kobe Steel Ltd | 高純度炭化ケイ素ウイスカ−の製造方法 |
US4756791A (en) * | 1986-08-25 | 1988-07-12 | Gte Laboratories Incorporated | Chemical vapor deposition process for producing metal carbide or nitride whiskers |
US4883559A (en) * | 1988-04-12 | 1989-11-28 | The United States Of America As Represented By The United States Department Of Energy | Process for making transition metal nitride whiskers |
US5094711A (en) * | 1988-09-12 | 1992-03-10 | Gte Valenite Corporation | Process for producing single crystal titanium carbide whiskers |
US4888084A (en) * | 1988-10-24 | 1989-12-19 | American Matrix, Inc. | Method for the preparation of titanium nitride whiskers |
US5404836A (en) * | 1989-02-03 | 1995-04-11 | Milewski; John V. | Method and apparatus for continuous controlled production of single crystal whiskers |
US5118488A (en) * | 1990-08-28 | 1992-06-02 | Martin Marietta Energy Systems, Inc. | Process for making whiskers, fibers and flakes of transition metal compounds |
JP3202987B2 (ja) * | 1990-11-26 | 2001-08-27 | 東海カーボン株式会社 | 炭化チタンウイスカーの製造方法 |
CA2055693A1 (en) * | 1990-12-20 | 1992-06-21 | Hermann L. Rittler | Phosphorous polymers |
US5221526A (en) * | 1991-05-24 | 1993-06-22 | Advanced Industrial Materials | Production of silicon carbide whiskers using a seeding component to determine shape and size of whiskers |
US5160574A (en) * | 1991-05-30 | 1992-11-03 | Aluminum Company Of America | Process for production of small diameter titanium carbide whiskers |
US5383421A (en) * | 1993-05-19 | 1995-01-24 | The Dow Chemical Company | Method for forming beta-silicon carbide whiskers, singly or in a matrix, using an organotitanium coordination compound catalyst |
-
1996
- 1996-07-04 AT AT96850131T patent/ATE213513T1/de not_active IP Right Cessation
- 1996-07-04 DE DE69619312T patent/DE69619312T2/de not_active Expired - Fee Related
- 1996-07-04 EP EP96850131A patent/EP0754783B1/de not_active Expired - Lifetime
- 1996-07-05 IL IL11879396A patent/IL118793A0/xx unknown
- 1996-07-22 JP JP8209360A patent/JPH09124399A/ja active Pending
- 1996-12-20 US US08/772,099 patent/US5853477A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69619312D1 (de) | 2002-03-28 |
IL118793A0 (en) | 1996-10-31 |
EP0754783A1 (de) | 1997-01-22 |
JPH09124399A (ja) | 1997-05-13 |
DE69619312T2 (de) | 2002-08-14 |
US5853477A (en) | 1998-12-29 |
EP0754783B1 (de) | 2002-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification | ||
REN | Ceased due to non-payment of the annual fee |