SE9900213D0 - Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases - Google Patents

Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases

Info

Publication number
SE9900213D0
SE9900213D0 SE9900213A SE9900213A SE9900213D0 SE 9900213 D0 SE9900213 D0 SE 9900213D0 SE 9900213 A SE9900213 A SE 9900213A SE 9900213 A SE9900213 A SE 9900213A SE 9900213 D0 SE9900213 D0 SE 9900213D0
Authority
SE
Sweden
Prior art keywords
whiskers
transition metal
low residual
manufacture
carbon powder
Prior art date
Application number
SE9900213A
Other languages
English (en)
Inventor
Mats Johnsson
Niklas Ahlen
Pernilla Pettersson
Gunnar Brandt
Magnus Ekelund
Original Assignee
Sandvik Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandvik Ab filed Critical Sandvik Ab
Priority to SE9900213A priority Critical patent/SE9900213D0/sv
Publication of SE9900213D0 publication Critical patent/SE9900213D0/sv
Priority to PCT/SE2000/000157 priority patent/WO2000044965A1/en
Priority to EP00903067A priority patent/EP1149192A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE9900213A 1999-01-26 1999-01-26 Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases SE9900213D0 (sv)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE9900213A SE9900213D0 (sv) 1999-01-26 1999-01-26 Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases
PCT/SE2000/000157 WO2000044965A1 (en) 1999-01-26 2000-01-25 Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases
EP00903067A EP1149192A1 (en) 1999-01-26 2000-01-25 Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9900213A SE9900213D0 (sv) 1999-01-26 1999-01-26 Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases

Publications (1)

Publication Number Publication Date
SE9900213D0 true SE9900213D0 (sv) 1999-01-26

Family

ID=20414208

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9900213A SE9900213D0 (sv) 1999-01-26 1999-01-26 Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases

Country Status (3)

Country Link
EP (1) EP1149192A1 (sv)
SE (1) SE9900213D0 (sv)
WO (1) WO2000044965A1 (sv)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720112B2 (en) 2001-10-02 2004-04-13 Valence Technology, Inc. Lithium cell based on lithiated transition metal titanates
US6706445B2 (en) 2001-10-02 2004-03-16 Valence Technology, Inc. Synthesis of lithiated transition metal titanates for lithium cells
WO2014082038A1 (en) * 2012-11-26 2014-05-30 Kansas State University Research Foundation Thermochemical ammonia and hydrocarbons
US11270850B2 (en) 2013-12-20 2022-03-08 Fastcap Systems Corporation Ultracapacitors with high frequency response
KR102459315B1 (ko) 2014-10-09 2022-10-27 패스트캡 시스템즈 코포레이션 에너지 저장 디바이스를 위한 나노구조 전극
MX2019006454A (es) 2016-12-02 2019-08-01 Fastcap Systems Corp Electrodo compuesto.
US11557765B2 (en) 2019-07-05 2023-01-17 Fastcap Systems Corporation Electrodes for energy storage devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756791A (en) * 1986-08-25 1988-07-12 Gte Laboratories Incorporated Chemical vapor deposition process for producing metal carbide or nitride whiskers
WO1990014451A1 (en) * 1989-05-19 1990-11-29 Kennametal Inc. Cvd grown transition metal carbide and nitride whiskers
JP3202987B2 (ja) * 1990-11-26 2001-08-27 東海カーボン株式会社 炭化チタンウイスカーの製造方法
DE69619311T2 (de) * 1995-07-20 2002-10-17 Sandvik Ab, Sandviken Herstellung von Titankarbid-, Titannitrid- und Titankarbonitridwhiskern

Also Published As

Publication number Publication date
EP1149192A1 (en) 2001-10-31
WO2000044965A1 (en) 2000-08-03

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