ATE193130T1 - Herstellung und verwendung eines eichsystems in submikronbereich - Google Patents

Herstellung und verwendung eines eichsystems in submikronbereich

Info

Publication number
ATE193130T1
ATE193130T1 AT96905353T AT96905353T ATE193130T1 AT E193130 T1 ATE193130 T1 AT E193130T1 AT 96905353 T AT96905353 T AT 96905353T AT 96905353 T AT96905353 T AT 96905353T AT E193130 T1 ATE193130 T1 AT E193130T1
Authority
AT
Austria
Prior art keywords
grating
dose
energy deposition
width
space
Prior art date
Application number
AT96905353T
Other languages
English (en)
Inventor
Leon A Firstein
John L Rogers
Arthur Noz
Original Assignee
Rfn Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rfn Technology Inc filed Critical Rfn Technology Inc
Application granted granted Critical
Publication of ATE193130T1 publication Critical patent/ATE193130T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H01J2237/30444—Calibration grids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT96905353T 1995-02-06 1996-02-06 Herstellung und verwendung eines eichsystems in submikronbereich ATE193130T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/383,922 US5585211A (en) 1995-02-06 1995-02-06 Fabrication and use of sub-micron dimensional standard
PCT/US1996/001477 WO1996024885A1 (en) 1995-02-06 1996-02-06 Fabrication and use of a sub-micron dimensional standard

Publications (1)

Publication Number Publication Date
ATE193130T1 true ATE193130T1 (de) 2000-06-15

Family

ID=23515311

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96905353T ATE193130T1 (de) 1995-02-06 1996-02-06 Herstellung und verwendung eines eichsystems in submikronbereich

Country Status (7)

Country Link
US (1) US5585211A (de)
EP (1) EP0808477B1 (de)
JP (1) JPH11501145A (de)
KR (1) KR19980701994A (de)
AT (1) ATE193130T1 (de)
DE (1) DE69608419T2 (de)
WO (1) WO1996024885A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5862058A (en) * 1996-05-16 1999-01-19 International Business Machines Corporation Optical proximity correction method and system
US5798194A (en) * 1996-05-22 1998-08-25 Nikon Corporation Masks for charged-particle beam microlithography
US6048649A (en) * 1998-04-30 2000-04-11 International Business Machines Corporation Programmed defect mask with defects smaller than 0.1 μm
IL128519A0 (en) * 1999-02-14 2000-06-01 Aaron Lewis Deconvolving far-field optical images beyond the diffraction limit by using scanned-probe optical and non-optical data as the constraint in mathematical constraint algorithms
US6284443B1 (en) 1999-04-30 2001-09-04 International Business Machines Corporation Method and apparatus for image adjustment
US6717685B1 (en) 1999-09-24 2004-04-06 Bae Systems Information In situ proximity gap monitor for lithography
US6591658B1 (en) 2000-10-25 2003-07-15 Advanced Micro Devices, Inc. Carbon nanotubes as linewidth standards for SEM & AFM
US6354133B1 (en) 2000-10-25 2002-03-12 Advanced Micro Devices, Inc. Use of carbon nanotubes to calibrate conventional tips used in AFM
US6894790B2 (en) * 2001-11-13 2005-05-17 Hitachi High-Technologies Corporation Micropattern shape measuring system and method
US6643008B1 (en) * 2002-02-26 2003-11-04 Advanced Micro Devices, Inc. Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures
US6645781B1 (en) * 2002-04-29 2003-11-11 Texas Instruments Incorporated Method to determine a complete etch in integrated devices
US7054000B2 (en) * 2003-08-04 2006-05-30 General Phosphorix Llc Method of calibration of magnification of microscopes having different operational principles for bringing them into a single, absolute scale
DE102004018679A1 (de) * 2004-04-17 2005-11-03 Robert Bosch Gmbh Prüfkörper für Elektronenmikroskope und Verfahren zur Herstellung eines Prüfkörpers
JP4480001B2 (ja) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4801427B2 (ja) * 2005-01-04 2011-10-26 株式会社日立ハイテクノロジーズ パターン形状評価方法
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Ｈｏｙａ株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
JP6953109B2 (ja) * 2015-09-24 2021-10-27 ウシオ電機株式会社 基板上構造体の製造方法
WO2017051443A1 (ja) * 2015-09-24 2017-03-30 ウシオ電機株式会社 露光方法、微細周期構造体の製造方法、グリッド偏光素子の製造方法及び露光装置
EP3663855A1 (de) * 2018-12-04 2020-06-10 ASML Netherlands B.V. Sem-fov-fingerabdruck in stochastischen epe und positionsmessungen in grossen fov-sem-vorrichtungen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961102A (en) * 1974-09-13 1976-06-01 Cornwell Research Foundation, Inc. Scanning electron microscope fabrication of optical gratings
US5087537A (en) * 1989-10-11 1992-02-11 International Business Machines Corporation Lithography imaging tool and related photolithographic processes
JPH04206537A (ja) * 1990-11-30 1992-07-28 Hitachi Ltd 線幅の測定方法
DE59209053D1 (de) * 1991-07-17 1998-01-22 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung aktivierter Sialinsäuren
US5256505A (en) * 1992-08-21 1993-10-26 Microunity Systems Engineering Lithographical mask for controlling the dimensions of resist patterns

Also Published As

Publication number Publication date
KR19980701994A (ko) 1998-06-25
DE69608419D1 (de) 2000-06-21
WO1996024885A1 (en) 1996-08-15
EP0808477A4 (de) 1998-03-11
JPH11501145A (ja) 1999-01-26
EP0808477A1 (de) 1997-11-26
DE69608419T2 (de) 2001-02-08
EP0808477B1 (de) 2000-05-17
US5585211A (en) 1996-12-17

Similar Documents

Publication Publication Date Title
ATE193130T1 (de) Herstellung und verwendung eines eichsystems in submikronbereich
EP2295940B1 (de) Optischer Kodierer zum Erhalt von Verschiebungsinformation von Objekten
EP0996142A3 (de) Elektronenstrahl-Lithographieverfahren und Elektronenstrahl-Lithographievorrichtung
KR880006764A (ko) 스텝 및 반복 투사 정렬기용 최적 촛점 결정방법
JPS6413140A (en) Photopolymerizable composition
DE3579338D1 (de) Positionsmesseinrichtung.
KR970066718A (ko) 감방사선성 수지 조성물
DE59004252D1 (de) Interferentielle Messeinrichtung für wenigstens eine Messrichtung.
EP0496159A3 (de) Musterzerteilungsverfahren für die Elektronenstrahl-Lithographie
EP1102368A3 (de) Schmalband-Excimer-Laservorrichtung
US7112782B2 (en) Optical position measuring system
EP1128215A3 (de) Ausrichtmarkensatz und Verfahren zur Messung der Ausrichtgenauigkeit
DE58909366D1 (de) Verfahren zur Herstellung eines Maskenträgers aus SiC für Strahlungslithographie-Masken.
DE69523996T2 (de) Detektorreihe für interferometrische Messsysteme
Tang et al. Improvement on theoretical model for thin-wire and slot measurement by optical diffraction
Forbes A history of the solar red shift problem
DE69009503D1 (de) Resist-Materialien für Lithographie mittels eines Elektronen- oder Röntgenstrahls.
Boyer et al. Simulator mounted Moire topography camera for constructing compensating filters
SE9301749L (sv) Metod och anordning för att skapa en modell av en tandrestauration
Song et al. Reducing tilt errors in moiré linear encoders using phase-modulated grating
EP1376237A3 (de) Ausseraxiale Metrologie eines adaptiven optischen Systems
US7084390B2 (en) Position-measuring device including measuring graduation and scanning unit
Träbert et al. Finestructure transitions in doubly excited three-electron Mg9+
Drechsel et al. Spectrophotometry of nova Delphini 1967.
Ma et al. A versatile analytical expression for the inverse Abel transform applied to experimental data with noise

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties