DE69608419T2 - Herstellung und verwendung eines eichsystems in submikronbereich - Google Patents

Herstellung und verwendung eines eichsystems in submikronbereich

Info

Publication number
DE69608419T2
DE69608419T2 DE69608419T DE69608419T DE69608419T2 DE 69608419 T2 DE69608419 T2 DE 69608419T2 DE 69608419 T DE69608419 T DE 69608419T DE 69608419 T DE69608419 T DE 69608419T DE 69608419 T2 DE69608419 T2 DE 69608419T2
Authority
DE
Germany
Prior art keywords
grating
dose
energy deposition
width
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69608419T
Other languages
English (en)
Other versions
DE69608419D1 (de
Inventor
A Firstein
L Rogers
Arthur Noz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RFN TECHNOLOGY Inc
Original Assignee
RFN TECHNOLOGY Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RFN TECHNOLOGY Inc filed Critical RFN TECHNOLOGY Inc
Application granted granted Critical
Publication of DE69608419D1 publication Critical patent/DE69608419D1/de
Publication of DE69608419T2 publication Critical patent/DE69608419T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H01J2237/30444—Calibration grids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69608419T 1995-02-06 1996-02-06 Herstellung und verwendung eines eichsystems in submikronbereich Expired - Fee Related DE69608419T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/383,922 US5585211A (en) 1995-02-06 1995-02-06 Fabrication and use of sub-micron dimensional standard
PCT/US1996/001477 WO1996024885A1 (en) 1995-02-06 1996-02-06 Fabrication and use of a sub-micron dimensional standard

Publications (2)

Publication Number Publication Date
DE69608419D1 DE69608419D1 (de) 2000-06-21
DE69608419T2 true DE69608419T2 (de) 2001-02-08

Family

ID=23515311

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69608419T Expired - Fee Related DE69608419T2 (de) 1995-02-06 1996-02-06 Herstellung und verwendung eines eichsystems in submikronbereich

Country Status (7)

Country Link
US (1) US5585211A (de)
EP (1) EP0808477B1 (de)
JP (1) JPH11501145A (de)
KR (1) KR19980701994A (de)
AT (1) ATE193130T1 (de)
DE (1) DE69608419T2 (de)
WO (1) WO1996024885A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5862058A (en) * 1996-05-16 1999-01-19 International Business Machines Corporation Optical proximity correction method and system
US5798194A (en) * 1996-05-22 1998-08-25 Nikon Corporation Masks for charged-particle beam microlithography
US6048649A (en) * 1998-04-30 2000-04-11 International Business Machines Corporation Programmed defect mask with defects smaller than 0.1 μm
IL128519A0 (en) * 1999-02-14 2000-06-01 Aaron Lewis Deconvolving far-field optical images beyond the diffraction limit by using scanned-probe optical and non-optical data as the constraint in mathematical constraint algorithms
US6284443B1 (en) 1999-04-30 2001-09-04 International Business Machines Corporation Method and apparatus for image adjustment
US6717685B1 (en) 1999-09-24 2004-04-06 Bae Systems Information In situ proximity gap monitor for lithography
US6591658B1 (en) 2000-10-25 2003-07-15 Advanced Micro Devices, Inc. Carbon nanotubes as linewidth standards for SEM & AFM
US6354133B1 (en) 2000-10-25 2002-03-12 Advanced Micro Devices, Inc. Use of carbon nanotubes to calibrate conventional tips used in AFM
US6894790B2 (en) * 2001-11-13 2005-05-17 Hitachi High-Technologies Corporation Micropattern shape measuring system and method
US6643008B1 (en) * 2002-02-26 2003-11-04 Advanced Micro Devices, Inc. Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures
US6645781B1 (en) * 2002-04-29 2003-11-11 Texas Instruments Incorporated Method to determine a complete etch in integrated devices
US7054000B2 (en) * 2003-08-04 2006-05-30 General Phosphorix Llc Method of calibration of magnification of microscopes having different operational principles for bringing them into a single, absolute scale
DE102004018679A1 (de) * 2004-04-17 2005-11-03 Robert Bosch Gmbh Prüfkörper für Elektronenmikroskope und Verfahren zur Herstellung eines Prüfkörpers
JP4480001B2 (ja) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4801427B2 (ja) * 2005-01-04 2011-10-26 株式会社日立ハイテクノロジーズ パターン形状評価方法
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Ｈｏｙａ株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
WO2017051443A1 (ja) * 2015-09-24 2017-03-30 ウシオ電機株式会社 露光方法、微細周期構造体の製造方法、グリッド偏光素子の製造方法及び露光装置
JP6953109B2 (ja) * 2015-09-24 2021-10-27 ウシオ電機株式会社 基板上構造体の製造方法
EP3663855A1 (de) * 2018-12-04 2020-06-10 ASML Netherlands B.V. Sem-fov-fingerabdruck in stochastischen epe und positionsmessungen in grossen fov-sem-vorrichtungen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961102A (en) * 1974-09-13 1976-06-01 Cornwell Research Foundation, Inc. Scanning electron microscope fabrication of optical gratings
US5087537A (en) * 1989-10-11 1992-02-11 International Business Machines Corporation Lithography imaging tool and related photolithographic processes
JPH04206537A (ja) * 1990-11-30 1992-07-28 Hitachi Ltd 線幅の測定方法
ES2110481T3 (es) * 1991-07-17 1998-02-16 Ciba Geigy Ag Procedimiento para la obtencion de acidos sialicos activados.
US5256505A (en) * 1992-08-21 1993-10-26 Microunity Systems Engineering Lithographical mask for controlling the dimensions of resist patterns

Also Published As

Publication number Publication date
US5585211A (en) 1996-12-17
WO1996024885A1 (en) 1996-08-15
EP0808477B1 (de) 2000-05-17
ATE193130T1 (de) 2000-06-15
EP0808477A1 (de) 1997-11-26
KR19980701994A (ko) 1998-06-25
EP0808477A4 (de) 1998-03-11
JPH11501145A (ja) 1999-01-26
DE69608419D1 (de) 2000-06-21

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Legal Events

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8339 Ceased/non-payment of the annual fee