ATE179223T1 - Verfahren und vorrichtung zur herstellung angeregter gase - Google Patents

Verfahren und vorrichtung zur herstellung angeregter gase

Info

Publication number
ATE179223T1
ATE179223T1 AT95902838T AT95902838T ATE179223T1 AT E179223 T1 ATE179223 T1 AT E179223T1 AT 95902838 T AT95902838 T AT 95902838T AT 95902838 T AT95902838 T AT 95902838T AT E179223 T1 ATE179223 T1 AT E179223T1
Authority
AT
Austria
Prior art keywords
gas mixture
pct
date jun
species
sec
Prior art date
Application number
AT95902838T
Other languages
English (en)
Inventor
Thierry Sindzingre
Stephane Rabia
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Application granted granted Critical
Publication of ATE179223T1 publication Critical patent/ATE179223T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5093—Coaxial electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
AT95902838T 1993-12-15 1994-12-07 Verfahren und vorrichtung zur herstellung angeregter gase ATE179223T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9315109A FR2713666B1 (fr) 1993-12-15 1993-12-15 Procédé et dispositif de dépôt à basse température d'un film contenant du silicium sur un substrat métallique.

Publications (1)

Publication Number Publication Date
ATE179223T1 true ATE179223T1 (de) 1999-05-15

Family

ID=9453982

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95902838T ATE179223T1 (de) 1993-12-15 1994-12-07 Verfahren und vorrichtung zur herstellung angeregter gase

Country Status (8)

Country Link
US (1) US5807615A (de)
EP (1) EP0734462B1 (de)
JP (1) JPH09506672A (de)
AT (1) ATE179223T1 (de)
DE (1) DE69418059T2 (de)
ES (1) ES2130577T3 (de)
FR (1) FR2713666B1 (de)
WO (1) WO1995016802A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US5900317A (en) * 1996-09-13 1999-05-04 Minnesota Mining & Manufacturing Company Flame-treating process
DE19643865C2 (de) * 1996-10-30 1999-04-08 Schott Glas Plasmaunterstütztes chemisches Abscheidungsverfahren (CVD) mit entfernter Anregung eines Anregungsgases (Remote-Plasma-CVD-Verfahren) zur Beschichtung oder zur Behandlung großflächiger Substrate und Vorrichtung zur Durchführung desselben
US6037241A (en) * 1998-02-19 2000-03-14 First Solar, Llc Apparatus and method for depositing a semiconductor material
FR2789698B1 (fr) * 1999-02-11 2002-03-29 Air Liquide Procede et installation pour former un depot d'une couche sur un substrat
KR100815038B1 (ko) * 2000-12-12 2008-03-18 코니카 미놀타 홀딩스 가부시키가이샤 박막 형성 방법, 박막을 갖는 물품, 광학 필름, 유전체피복 전극 및 플라즈마 방전 처리 장치
US6896968B2 (en) * 2001-04-06 2005-05-24 Honeywell International Inc. Coatings and method for protecting carbon-containing components from oxidation
US6776330B2 (en) 2001-09-10 2004-08-17 Air Products And Chemicals, Inc. Hydrogen fluxless soldering by electron attachment
US7524532B2 (en) * 2002-04-22 2009-04-28 Aixtron Ag Process for depositing thin layers on a substrate in a process chamber of adjustable height
US8361340B2 (en) * 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US7897029B2 (en) * 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US7387738B2 (en) * 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
US7079370B2 (en) * 2003-04-28 2006-07-18 Air Products And Chemicals, Inc. Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation
JP4506104B2 (ja) * 2003-06-06 2010-07-21 コニカミノルタホールディングス株式会社 薄膜形成方法
WO2004108984A1 (ja) * 2003-06-06 2004-12-16 Konica Minolta Holdings, Inc. 薄膜形成方法および薄膜形成体
DE10340487B4 (de) * 2003-09-03 2007-07-12 Technische Universität Dresden Perfusionskreislauf
US7758928B2 (en) 2003-10-15 2010-07-20 Dow Corning Corporation Functionalisation of particles
EP1673162A1 (de) 2003-10-15 2006-06-28 Dow Corning Ireland Limited Resinsherstellung
US7780787B2 (en) * 2004-08-11 2010-08-24 First Solar, Inc. Apparatus and method for depositing a material on a substrate
GB0423685D0 (en) 2004-10-26 2004-11-24 Dow Corning Ireland Ltd Improved method for coating a substrate
US7434719B2 (en) * 2005-12-09 2008-10-14 Air Products And Chemicals, Inc. Addition of D2 to H2 to detect and calibrate atomic hydrogen formed by dissociative electron attachment
JP5666378B2 (ja) * 2010-05-24 2015-02-12 信越化学工業株式会社 非水電解質二次電池用負極活物質の製造方法及び非水電解質二次電池用負極活物質並びに非水電解質二次電池用負極材、非水電解質二次電池用負極、非水電解質二次電池
DE102011010751A1 (de) * 2011-02-09 2012-08-09 Osram Opto Semiconductors Gmbh Verfahren zur Durchführung eines Epitaxieprozesses
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US10211310B2 (en) 2012-06-12 2019-02-19 Novellus Systems, Inc. Remote plasma based deposition of SiOC class of films
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US9371579B2 (en) 2013-10-24 2016-06-21 Lam Research Corporation Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
JP2017045714A (ja) * 2015-08-28 2017-03-02 東洋製罐グループホールディングス株式会社 高周波誘電加熱方法
US9837270B1 (en) 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
US10840087B2 (en) 2018-07-20 2020-11-17 Lam Research Corporation Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films
US11848199B2 (en) 2018-10-19 2023-12-19 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
EP4136974A1 (de) 2021-08-20 2023-02-22 Fixed Phage Limited Plasmabehandlungsverfahren und entsprechendes gerät

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145984A (ja) * 1982-02-24 1983-08-31 三菱電機株式会社 大型カラ−画像表示装置
JPS6129803A (ja) * 1984-07-23 1986-02-10 Toshiba Electric Equip Corp 照明装置
JPS61103688A (ja) * 1984-10-26 1986-05-22 Fujitsu Ltd レ−ザと光フアイバを用いた加工方法
JPS61186914A (ja) * 1985-02-14 1986-08-20 Fuji Photo Film Co Ltd マルチ光源装置
JPS626789A (ja) * 1985-07-03 1987-01-13 Japan Sensor Corp:Kk レ−ザ溶接機
US4774062A (en) * 1987-01-13 1988-09-27 Alten Corporation Corona discharge ozonator
JPH02142695A (ja) * 1988-07-13 1990-05-31 Sony Corp レーザ加工装置
JPH02148715A (ja) * 1988-11-29 1990-06-07 Canon Inc 半導体デバイスの連続形成装置
JPH02196983A (ja) * 1989-01-25 1990-08-03 Nec Corp レーザ光源装置
JPH0775226B2 (ja) * 1990-04-10 1995-08-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン プラズマ処理方法及び装置
JP3063769B2 (ja) * 1990-07-17 2000-07-12 イーシー化学株式会社 大気圧プラズマ表面処理法
JPH04300087A (ja) * 1991-03-27 1992-10-23 Mitsubishi Electric Corp ファイバーアレイ　レーザ加工方法
JPH04320383A (ja) * 1991-04-19 1992-11-11 Nippon Steel Corp 半導体レーザ励起固体レーザ装置
JPH04337076A (ja) * 1991-05-14 1992-11-25 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのプラズマ及びラジカルｃｖｄ法による高速成膜方法
FR2692730B1 (fr) * 1992-06-19 1994-08-19 Air Liquide Dispositif de formation de molécules gazeuses excitées ou instables et utilisations d'un tel dispositif.

Also Published As

Publication number Publication date
JPH09506672A (ja) 1997-06-30
ES2130577T3 (es) 1999-07-01
FR2713666B1 (fr) 1996-01-12
EP0734462B1 (de) 1999-04-21
DE69418059T2 (de) 1999-09-02
EP0734462A1 (de) 1996-10-02
FR2713666A1 (fr) 1995-06-16
DE69418059D1 (de) 1999-05-27
WO1995016802A1 (fr) 1995-06-22
US5807615A (en) 1998-09-15

Similar Documents

Publication Publication Date Title
ATE179223T1 (de) Verfahren und vorrichtung zur herstellung angeregter gase
AU2003231971A1 (en) Mullite bodies and methods of forming mullite bodies
ES2091136T3 (es) Transformacion de carbono o compuestos carbonados en un plasma.
WO2004059707A3 (en) A method and apparatus for forming a high quality low temperature silicon nitride film
SE9801190D0 (sv) A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
DE59810556D1 (de) Verfahren zur regenerierung eines zeolith-katalysators
DE59305360D1 (de) Verfahren und vorrichtung zur vorformherstellung für quarzglas-lichtwellenleiter
ATE153311T1 (de) Verfahren und vorrichtung zum erzeugen von stickstoffoxyde
GB2322235A (en) Metals removal process
DE69707427D1 (de) Verfahren und vorrichtung zur produktion eines mindestens einen bestandteil enthaltenden gases aus einem gasgemisch
JPS5514839A (en) Treating method for ion nitriding
DE69418058D1 (de) Verfharen und vorrichtung zur herstellung angeregter gase
EP0727826A3 (de) Herstellungsverfahren für einen dünnen Halbleiterfilm und Plasma-CVD-Gerät zur Verwendung in diesen Verfahren
ATE179968T1 (de) Verfahren zur herstellung eines verbundwerkstoffes, genauer eines nanoporösen körpers, und damit hergestellter nanoporöser körper
ES2092250T3 (es) Procedimiento para formar un deposito que contiene silicio en la superficie de un sustrato metalico, y procedimiento de tratamiento anticorrosion.
EP1211329A3 (de) Verfahren und Vorrichtung zum Hochdruckgasabschrecken in einem Schutzgasofen
CA2407372A1 (en) Low-pressure carburising method
ATE338937T1 (de) Oberflächengehärtetes präzisiongewicht und verfahren zu dessen herstellung
EP0959653A3 (de) Lagereinrichtung zum Bereithalten elektronischer Bauelemente
JPS6475678A (en) Hard carbon film containing nitrogen
ATE165399T1 (de) Verfahren und vorrichtung zum wärmebehandeln von werkstücken
GR3006766T3 (de)
ATE546222T1 (de) Vorrichtung und verfahren zur herstellung eines brennbaren gases
DE59208022D1 (de) Verfahren zur herstellung von 3(5)-methylpyrazolen
ATE131216T1 (de) Verfahren zur behandlung von stählen und refraktärmetallen.

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee