ATE149700T1 - Bildempfangsschicht bestehend aus nicht- monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung - Google Patents

Bildempfangsschicht bestehend aus nicht- monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung

Info

Publication number
ATE149700T1
ATE149700T1 AT93913544T AT93913544T ATE149700T1 AT E149700 T1 ATE149700 T1 AT E149700T1 AT 93913544 T AT93913544 T AT 93913544T AT 93913544 T AT93913544 T AT 93913544T AT E149700 T1 ATE149700 T1 AT E149700T1
Authority
AT
Austria
Prior art keywords
receiving layer
monocrytalline
silicon
column
production
Prior art date
Application number
AT93913544T
Other languages
English (en)
Inventor
Tetsuya Takei
Hirokazu Ohtoshi
Takehito Yoshino
Ryuji Okamura
Yasuyoshi Takai
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE149700T1 publication Critical patent/ATE149700T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical Vapour Deposition (AREA)
AT93913544T 1992-06-18 1993-06-18 Bildempfangsschicht bestehend aus nicht- monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung ATE149700T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18286392 1992-06-18

Publications (1)

Publication Number Publication Date
ATE149700T1 true ATE149700T1 (de) 1997-03-15

Family

ID=16125764

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93913544T ATE149700T1 (de) 1992-06-18 1993-06-18 Bildempfangsschicht bestehend aus nicht- monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung

Country Status (5)

Country Link
US (1) US5624776A (de)
EP (1) EP0618508B1 (de)
AT (1) ATE149700T1 (de)
DE (1) DE69308535T2 (de)
WO (1) WO1993025940A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6238832B1 (en) * 1997-12-25 2001-05-29 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US6635397B2 (en) * 2001-04-24 2003-10-21 Canon Kabushiki Kaisha Negative-charging electrophotographic photosensitive member
JP3913123B2 (ja) * 2001-06-28 2007-05-09 キヤノン株式会社 電子写真感光体の製造方法
JP4546055B2 (ja) * 2002-09-24 2010-09-15 キヤノン株式会社 クリーニングブラシのブラシ密度と静電像の１画素面積の設定方法
US6893476B2 (en) * 2002-12-09 2005-05-17 Dupont Air Products Nanomaterials Llc Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal
US8507170B2 (en) * 2008-07-25 2013-08-13 Canon Kabushiki Kaisha Image-forming method and image-forming apparatus

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4269919A (en) * 1976-07-13 1981-05-26 Coulter Systems Corporation Inorganic photoconductive coating, electrophotographic member and sputtering method of making the same
JPS587149A (ja) * 1981-07-03 1983-01-14 Fuji Photo Film Co Ltd 光導電感光体
JPS60140353A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 電子写真感光体
JPS6156351A (ja) * 1984-08-28 1986-03-22 Konishiroku Photo Ind Co Ltd 感光体
JP2505732B2 (ja) * 1985-02-05 1996-06-12 キヤノン株式会社 堆積膜形成法
JPS61232466A (ja) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd 電子写真感光体の製造方法
JPS6373263A (ja) * 1986-09-17 1988-04-02 Toshiba Corp 電子写真感光体
US4789646A (en) * 1987-07-20 1988-12-06 North American Philips Corporation, Signetics Division Company Method for selective surface treatment of semiconductor structures
JPS6462660A (en) * 1987-09-02 1989-03-09 Toshiba Corp Electrophotographic sensitive body
DE3927353A1 (de) * 1988-08-18 1990-05-17 Canon Kk Elektrophotographisches bildformierungsmaterial mit photoleitfaehiger schicht, die nichteinkristall-siliziumcarbid aufweist
JP2867150B2 (ja) * 1988-11-15 1999-03-08 キヤノン株式会社 マイクロ波プラズマｃｖｄ装置
JP2907438B2 (ja) * 1989-03-17 1999-06-21 大日本印刷株式会社 静電印刷方法
JP2811108B2 (ja) * 1990-03-14 1998-10-15 コニカ株式会社 電子写真感光体
JP2962851B2 (ja) * 1990-04-26 1999-10-12 キヤノン株式会社 光受容部材
JPH0553355A (ja) * 1991-08-28 1993-03-05 Canon Inc 電子写真感光体及びその製造方法

Also Published As

Publication number Publication date
EP0618508B1 (de) 1997-03-05
EP0618508A1 (de) 1994-10-05
EP0618508A4 (de) 1994-12-07
US5624776A (en) 1997-04-29
WO1993025940A1 (en) 1993-12-23
DE69308535T2 (de) 1997-09-18
DE69308535D1 (de) 1997-04-10

Similar Documents

Publication Publication Date Title
DE69231328T2 (de) Verfahren zur Herstellung dünner Schichten aus Halbleitermaterial
FR2535495B1 (fr) Procede de fabrication d'enseignes et stratifie de matiere d'enseigne
FI960272A0 (fi) Menetelmä ohutkalvoaurinkokennojen integroidun laserstrukturoinnin tekemiseksi
DE69204386D1 (de) Verfahren zur Herstellung eines polykristallinen Siliziumfilmes.
FR2537608B2 (fr) Dispositif de fabrication d'un objet a structure chiralique a partir d'une source de matiere formable
DE69617147D1 (de) Verfahren zur Herstellung dünner Halbleiterschichten
DE69232749D1 (de) Verfahren zur Herstellung von defektfreiem Silizium auf einem isolierenden Substrat
DE69123422D1 (de) Halbleiteranordnung mit ferroelektrischem material und verfahren zu deren herstellung
DE69125554T2 (de) Verfahren zur Herstellung einer Solarzelle aus amorphem Silizium
DE69305318D1 (de) Verfahren zur Herstellung eines Siliziumoxid-Filmes
DE69031855D1 (de) Mehrschichtige Strukturen aus verschiedenen elektroaktiven Materialien sowie Verfahren zur deren Herstellung
DE69217810D1 (de) Verfahren zur Herstellung eines warmleitenden Materials
DE59203585D1 (de) Verfahren zur Herstellung einer Solarzelle aus einer Substratscheibe.
EP0566838A3 (en) Manufacturing method of thin film transistor
DE59308760D1 (de) Verfahren und Vorrichtung zur Herstellung metallischer Flächenelemente auf Substraten
FR2584083B1 (fr) Procede de formation d'un film accumule en un compose aliphatique fluore sur la surface d'un substrat
FR2714523B1 (fr) Procédé d'empêchement de la détérioration de la qualité de film d'un film conducteur transparent, dispositif à semiconducteur et son procédé de fabrication.
ATE149700T1 (de) Bildempfangsschicht bestehend aus nicht- monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung
JPS5538655A (en) Optical signal recording and reproducing member
FR2601816B1 (fr) Procede de formation sur un substrat d'une couche de materiau semi-conducteur a base d'elements des groupes ii et vi
ATE148820T1 (de) Schutzüberzug für elektronische baugruppen, sowie verfahren zu dessen herstellung
DE69032340D1 (de) Verfahren zur Herstellung einer Halbleiterdünnschicht
DE69124750T2 (de) Verfahren zur Herstellung eines Silizium Wafer mit einer Chip-Trennstruktur und Einkristallschichtabschnitten
DE69219191T2 (de) Verfahren zur Herstellung einer Dünnschicht aus supraleitender oxydischer Verbindung
BE887930A (fr) Procede de fabrication d'agglomeres de matiere premiere contenant du silicium et du carbone; utilisation de ces agglomeres

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties