ATE112416T1 - Halbleiter-elektronenemittierendes element. - Google Patents
Halbleiter-elektronenemittierendes element.Info
- Publication number
- ATE112416T1 ATE112416T1 AT91117540T AT91117540T ATE112416T1 AT E112416 T1 ATE112416 T1 AT E112416T1 AT 91117540 T AT91117540 T AT 91117540T AT 91117540 T AT91117540 T AT 91117540T AT E112416 T1 ATE112416 T1 AT E112416T1
- Authority
- AT
- Austria
- Prior art keywords
- region
- carrier concentration
- emission element
- electron emission
- semiconductor electron
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27391190 | 1990-10-13 | ||
JP3249214A JPH0512988A (ja) | 1990-10-13 | 1991-09-27 | 半導体電子放出素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE112416T1 true ATE112416T1 (de) | 1994-10-15 |
Family
ID=26539160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT91117540T ATE112416T1 (de) | 1990-10-13 | 1991-10-14 | Halbleiter-elektronenemittierendes element. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5414272A (de) |
EP (1) | EP0481419B1 (de) |
JP (1) | JPH0512988A (de) |
AT (1) | ATE112416T1 (de) |
DE (1) | DE69104319T2 (de) |
ES (1) | ES2060268T3 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69223707T2 (de) * | 1991-09-13 | 1998-05-20 | Canon Kk | Halbleiter-Elektronenemittierende Einrichtung |
JP3255960B2 (ja) * | 1991-09-30 | 2002-02-12 | 株式会社神戸製鋼所 | 冷陰極エミッタ素子 |
KR100291911B1 (ko) * | 1994-07-26 | 2001-09-17 | 김순택 | 반도체발광소자를이용한표시소자 |
JP2946189B2 (ja) * | 1994-10-17 | 1999-09-06 | キヤノン株式会社 | 電子源及び画像形成装置、並びにこれらの活性化方法 |
US5592053A (en) * | 1994-12-06 | 1997-01-07 | Kobe Steel Usa, Inc. | Diamond target electron beam device |
US6815875B2 (en) * | 2001-02-27 | 2004-11-09 | Hewlett-Packard Development Company, L.P. | Electron source having planar emission region and focusing structure |
US6882100B2 (en) * | 2001-04-30 | 2005-04-19 | Hewlett-Packard Development Company, L.P. | Dielectric light device |
US6781146B2 (en) | 2001-04-30 | 2004-08-24 | Hewlett-Packard Development Company, L.P. | Annealed tunneling emitter |
US6911768B2 (en) | 2001-04-30 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Tunneling emitter with nanohole openings |
US6753544B2 (en) | 2001-04-30 | 2004-06-22 | Hewlett-Packard Development Company, L.P. | Silicon-based dielectric tunneling emitter |
US6558968B1 (en) | 2001-10-31 | 2003-05-06 | Hewlett-Packard Development Company | Method of making an emitter with variable density photoresist layer |
KR20110042188A (ko) * | 2008-10-24 | 2011-04-25 | 가부시키가이샤 어드밴티스트 | 전자 디바이스 및 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL184549C (nl) * | 1978-01-27 | 1989-08-16 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting. |
NL184589C (nl) * | 1979-07-13 | 1989-09-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
GB2109160B (en) * | 1981-11-06 | 1985-05-30 | Philips Electronic Associated | Semiconductor electron source for display tubes and other equipment |
GB2109159B (en) * | 1981-11-06 | 1985-05-30 | Philips Electronic Associated | Semiconductor electron source for display tubes and other equipment |
JP2788243B2 (ja) * | 1988-02-27 | 1998-08-20 | キヤノン株式会社 | 半導体電子放出素子及び半導体電子放出装置 |
EP0416626B1 (de) * | 1989-09-07 | 1994-06-01 | Canon Kabushiki Kaisha | Elektronenemittierende Halbleitervorrichtung |
-
1991
- 1991-09-27 JP JP3249214A patent/JPH0512988A/ja active Pending
- 1991-10-14 AT AT91117540T patent/ATE112416T1/de not_active IP Right Cessation
- 1991-10-14 EP EP91117540A patent/EP0481419B1/de not_active Expired - Lifetime
- 1991-10-14 DE DE69104319T patent/DE69104319T2/de not_active Expired - Fee Related
- 1991-10-14 ES ES91117540T patent/ES2060268T3/es not_active Expired - Lifetime
-
1994
- 1994-04-07 US US08/224,192 patent/US5414272A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0512988A (ja) | 1993-01-22 |
EP0481419A3 (en) | 1992-05-13 |
DE69104319T2 (de) | 1995-02-09 |
ES2060268T3 (es) | 1994-11-16 |
EP0481419A2 (de) | 1992-04-22 |
EP0481419B1 (de) | 1994-09-28 |
DE69104319D1 (de) | 1994-11-03 |
US5414272A (en) | 1995-05-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |