ATE101455T1 - Halbleiterlaser-verstaerker. - Google Patents

Halbleiterlaser-verstaerker.

Info

Publication number
ATE101455T1
ATE101455T1 AT90300420T AT90300420T ATE101455T1 AT E101455 T1 ATE101455 T1 AT E101455T1 AT 90300420 T AT90300420 T AT 90300420T AT 90300420 T AT90300420 T AT 90300420T AT E101455 T1 ATE101455 T1 AT E101455T1
Authority
AT
Austria
Prior art keywords
semiconductor laser
laser amplifier
active layer
layer
amplifier
Prior art date
Application number
AT90300420T
Other languages
English (en)
Inventor
William John Devlin
David Martin Cooper
Paul Charles Spurdens
Simon Cole
Ian Francis Lealman
Joseph James Isaac
Original Assignee
British Telecomm
Bt & D Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecomm, Bt & D Technologies Ltd filed Critical British Telecomm
Application granted granted Critical
Publication of ATE101455T1 publication Critical patent/ATE101455T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Enzymes And Modification Thereof (AREA)
  • Bakery Products And Manufacturing Methods Therefor (AREA)
  • Optical Integrated Circuits (AREA)
AT90300420T 1989-01-13 1990-01-15 Halbleiterlaser-verstaerker. ATE101455T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB898900729A GB8900729D0 (en) 1989-01-13 1989-01-13 Semiconductor laser amplifiers
EP90300420A EP0378447B1 (de) 1989-01-13 1990-01-15 Halbleiterlaser-Verstärker

Publications (1)

Publication Number Publication Date
ATE101455T1 true ATE101455T1 (de) 1994-02-15

Family

ID=10649972

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90300420T ATE101455T1 (de) 1989-01-13 1990-01-15 Halbleiterlaser-verstaerker.

Country Status (13)

Country Link
US (1) US5291328A (de)
EP (1) EP0378447B1 (de)
JP (1) JPH04502983A (de)
KR (1) KR910700560A (de)
AT (1) ATE101455T1 (de)
AU (1) AU639681B2 (de)
CA (1) CA2045405C (de)
DE (1) DE69006518T2 (de)
FI (1) FI913381A7 (de)
GB (1) GB8900729D0 (de)
IE (1) IE62287B1 (de)
NZ (1) NZ232108A (de)
WO (1) WO1990008411A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175739A (en) * 1988-09-09 1992-12-29 Fujitsu Limited Semiconductor optical device having a non-linear operational characteristic
FR2656432B1 (fr) * 1989-12-22 1992-03-20 Thomson Csf Procede de realisation d'un dispositif optoelectronique amplificateur, dispositif obtenu par ce procede et applications a des dispositifs optoelectroniques divers.
JP2865000B2 (ja) * 1994-10-27 1999-03-08 日本電気株式会社 出力導波路集積半導体レーザとその製造方法
FR2736473B1 (fr) * 1995-07-06 1997-09-12 Boumedienne Mersali Dispositif laser a structure enterree pour circuit photonique integre et procede de fabrication
CA2392662A1 (en) 2001-07-10 2003-01-10 John Kenton White All optical clock recovery
US6597497B2 (en) 2001-10-04 2003-07-22 Shih-Yuan Wang Semiconductor optical amplifier with transverse laser cavity intersecting optical signal path and method of fabrication thereof
US6836357B2 (en) * 2001-10-04 2004-12-28 Gazillion Bits, Inc. Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof
US6714344B2 (en) 2001-10-04 2004-03-30 Gazillion Bits, Inc. Reducing output noise in a ballast-powered semiconductor optical amplifier

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1539028A (en) * 1975-12-18 1979-01-24 Tokyo Inst Tech Optical systems
US4794346A (en) * 1984-11-21 1988-12-27 Bell Communications Research, Inc. Broadband semiconductor optical amplifier structure
SE449673B (sv) * 1985-09-20 1987-05-11 Ericsson Telefon Ab L M Optisk forsterkaranordning med brusfilterfunktion
GB8611241D0 (en) * 1986-05-08 1986-06-18 British Telecomm Optical amplifiers
GB8703743D0 (en) * 1987-02-18 1987-03-25 British Telecomm Semiconductor laser structures

Also Published As

Publication number Publication date
JPH04502983A (ja) 1992-05-28
AU4843490A (en) 1990-08-13
IE62287B1 (en) 1995-01-25
EP0378447B1 (de) 1994-02-09
IE900153L (en) 1990-07-13
CA2045405C (en) 1997-10-21
DE69006518T2 (de) 1994-06-09
WO1990008411A1 (en) 1990-07-26
EP0378447A1 (de) 1990-07-18
GB8900729D0 (en) 1989-03-08
AU639681B2 (en) 1993-08-05
FI913381A0 (fi) 1991-07-12
US5291328A (en) 1994-03-01
FI913381A7 (fi) 1991-07-12
CA2045405A1 (en) 1990-07-14
NZ232108A (en) 1993-02-25
KR910700560A (ko) 1991-03-15
DE69006518D1 (de) 1994-03-24

Similar Documents

Publication Publication Date Title
EP0348235A3 (de) Verfahren und Vorrichtung zum Beurteilen einer optischen Faser mit Brillouin Verstärkung
EP0348941A3 (de) Halbleiterlaser-Vorrichtung
FI922823A0 (fi) Foer polarisation okaenslig foerstaerkningsanordning.
DE3787676D1 (de) Festkörperlaser.
JPS5726487A (en) Semiconductor laser device
DE69006518D1 (de) Halbleiterlaser-Verstärker.
DE3850131D1 (de) Laser mit im wesentlichen ebenem Wellenleiter.
ATE97503T1 (de) Optische wellenleitergeraete.
WO1991007010A3 (en) Optical amplifier
ATE197359T1 (de) Halbleitervorrichtung
EP0390524A3 (de) Optischer Wellenlängenkonverter
KR850002705A (ko) 반도체 레이저
DE68909642D1 (de) Polarisationsumschaltung in aktiven Elementen.
GB1285640A (en) Optical devices
KR900003672A (ko) 광통신 시스템
EP0886351A4 (de) Halbleiterlaser
JPS5727088A (en) Semiconductor laser device
EP0138567A3 (de) Halbleiter-Laserdioden
NO912753L (no) Halvleder-laserforsterkere.
KR900016785A (ko) 편광의 광학적 필터링
DE68915469D1 (de) Laserverstärker.
JPS5616950A (en) Optical information read-in unit
JPS57157586A (en) Semiconductor laser device
JPS57170585A (en) Semiconductor laser device
JPS57157587A (en) Semiconductor laser device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties