DE3850131D1 - Laser mit im wesentlichen ebenem Wellenleiter. - Google Patents

Laser mit im wesentlichen ebenem Wellenleiter.

Info

Publication number
DE3850131D1
DE3850131D1 DE3850131T DE3850131T DE3850131D1 DE 3850131 D1 DE3850131 D1 DE 3850131D1 DE 3850131 T DE3850131 T DE 3850131T DE 3850131 T DE3850131 T DE 3850131T DE 3850131 D1 DE3850131 D1 DE 3850131D1
Authority
DE
Germany
Prior art keywords
laser
waveguide
essentially flat
flat waveguide
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3850131T
Other languages
English (en)
Other versions
DE3850131T2 (de
Inventor
Bruce Arthur Vojak
Sang Keun Sheem
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
BP Corp North America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BP Corp North America Inc filed Critical BP Corp North America Inc
Application granted granted Critical
Publication of DE3850131D1 publication Critical patent/DE3850131D1/de
Publication of DE3850131T2 publication Critical patent/DE3850131T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Laser Surgery Devices (AREA)
DE3850131T 1987-02-04 1988-01-28 Laser mit im wesentlichen ebenem Wellenleiter. Expired - Lifetime DE3850131T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/010,643 US4791648A (en) 1987-02-04 1987-02-04 Laser having a substantially planar waveguide

Publications (2)

Publication Number Publication Date
DE3850131D1 true DE3850131D1 (de) 1994-07-21
DE3850131T2 DE3850131T2 (de) 1994-09-22

Family

ID=21746705

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850131T Expired - Lifetime DE3850131T2 (de) 1987-02-04 1988-01-28 Laser mit im wesentlichen ebenem Wellenleiter.

Country Status (8)

Country Link
US (1) US4791648A (de)
EP (1) EP0277768B1 (de)
JP (1) JP2851040B2 (de)
CN (1) CN88100570A (de)
AT (1) ATE107438T1 (de)
AU (1) AU589311B2 (de)
DE (1) DE3850131T2 (de)
IE (1) IE880296L (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4932032A (en) * 1989-08-03 1990-06-05 At&T Bell Laboratories Tapered semiconductor waveguides
JPH0661583A (ja) * 1992-08-11 1994-03-04 Sony Corp 半導体レーザ
US5537432A (en) * 1993-01-07 1996-07-16 Sdl, Inc. Wavelength-stabilized, high power semiconductor laser
US5392308A (en) 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
US5499261A (en) * 1993-01-07 1996-03-12 Sdl, Inc. Light emitting optical device with on-chip external cavity reflector
JP3573475B2 (ja) * 1993-12-01 2004-10-06 富士写真フイルム株式会社 レーザーダイオードポンピング固体レーザー
US6952504B2 (en) * 2001-12-21 2005-10-04 Neophotonics Corporation Three dimensional engineering of planar optical structures
US6891461B2 (en) * 1999-11-23 2005-05-10 Intel Corporation Integrated transformer
ATE527104T1 (de) * 2000-10-26 2011-10-15 Neophotonics Corp Mehrschichtige optische strukturen
US6668003B2 (en) * 2002-02-12 2003-12-23 Quintessence Photonics Corporation Laser diode array with an in-phase output
US7269195B2 (en) * 2002-03-04 2007-09-11 Quintessence Photonics Corporation Laser diode with an amplification section that has a varying index of refraction
US7983312B2 (en) 2007-08-09 2011-07-19 Raytheon Company Method and apparatus for generation and amplification of light in a semi-guiding high aspect ratio core fiber
EP2260550B1 (de) 2008-11-17 2012-04-04 Raytheon Company Verfahren und vorrichtung zur erzeugung und verstärkung von licht in einer halbführenden faser mit kern mit hohem seitenverhältnis
US9601904B1 (en) 2015-12-07 2017-03-21 Raytheon Company Laser diode driver with variable input voltage and variable diode string voltage
US10031286B1 (en) 2016-06-14 2018-07-24 Onyx Optics, Inc. Waveguide structures in anisotropic lasing and nonlinear optical media
US10355449B2 (en) 2016-08-15 2019-07-16 University Of Central Florida Research Foundation, Inc. Quantum cascade laser with angled active region and related methods

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251780A (en) * 1978-07-03 1981-02-17 Xerox Corporation Stripe offset geometry in injection lasers to achieve transverse mode control
NL7900668A (nl) * 1978-11-08 1980-05-12 Philips Nv Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting.
JPS55156381A (en) * 1979-01-24 1980-12-05 Nec Corp Semiconductor laser
US4349905A (en) * 1980-07-22 1982-09-14 Hewlett-Packard Company Tapered stripe semiconductor laser
JPS58220488A (ja) * 1982-06-17 1983-12-22 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
US4594718A (en) * 1983-02-01 1986-06-10 Xerox Corporation Combination index/gain guided semiconductor lasers
JPS6072284A (ja) * 1983-09-28 1985-04-24 Fujitsu Ltd 半導体レ−ザ
US4694459A (en) * 1985-05-31 1987-09-15 Xerox Corporation Hybrid gain/index guided semiconductor lasers and array lasers

Also Published As

Publication number Publication date
IE880296L (en) 1988-08-04
US4791648A (en) 1988-12-13
ATE107438T1 (de) 1994-07-15
JPS63222492A (ja) 1988-09-16
AU589311B2 (en) 1989-10-05
DE3850131T2 (de) 1994-09-22
AU1114188A (en) 1988-08-11
EP0277768A2 (de) 1988-08-10
EP0277768B1 (de) 1994-06-15
CN88100570A (zh) 1988-08-24
EP0277768A3 (en) 1989-02-22
JP2851040B2 (ja) 1999-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SDL, INC. (N.D.GES.D. STAATES DELAWARE), SAN JOSE,

8328 Change in the person/name/address of the agent

Free format text: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER, ANWALTSSOZIETAET, 80538 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP. (N.D.GES.D. STAATES DELAWARE),

8328 Change in the person/name/address of the agent

Representative=s name: KEHL, G., DIPL.-PHYS., PAT.-ANW., 81679 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: KEHL & ETTMAYR, PATENTANWAELTE, 81679 MUENCHEN