ATE10085T1 - Aluminiumoxyd enthaltende mischoxyde, ihr herstellungsverfahren und ihre anwendung. - Google Patents

Aluminiumoxyd enthaltende mischoxyde, ihr herstellungsverfahren und ihre anwendung.

Info

Publication number
ATE10085T1
ATE10085T1 AT81401087T AT81401087T ATE10085T1 AT E10085 T1 ATE10085 T1 AT E10085T1 AT 81401087 T AT81401087 T AT 81401087T AT 81401087 T AT81401087 T AT 81401087T AT E10085 T1 ATE10085 T1 AT E10085T1
Authority
AT
Austria
Prior art keywords
aluminum oxide
application
different
production process
containing aluminum
Prior art date
Application number
AT81401087T
Other languages
English (en)
Inventor
Andree Kahn
Anne-Marie Lejus
Jeanine Thery
Daniel Vivien
Original Assignee
Centre National De La Recherche Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National De La Recherche Scientifique filed Critical Centre National De La Recherche Scientifique
Application granted granted Critical
Publication of ATE10085T1 publication Critical patent/ATE10085T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/30—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6
    • C01F17/32—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6 oxide or hydroxide being the only anion, e.g. NaCeO2 or MgxCayEuO
    • C01F17/34—Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00—Compounds of niobium
    • C01G33/006—Compounds containing, besides niobium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G37/00—Compounds of chromium
    • C01G37/006—Compounds containing, besides chromium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G45/00—Compounds of manganese
    • C01G45/006—Compounds containing, besides manganese, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G49/00—Compounds of iron
    • C01G49/009—Compounds containing, besides iron, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C01G51/006—Compounds containing, besides cobalt, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G53/00—Compounds of nickel
    • C01G53/006—Compounds containing, besides nickel, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1688—Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Compounds Of Iron (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Luminescent Compositions (AREA)
AT81401087T 1980-07-08 1981-07-07 Aluminiumoxyd enthaltende mischoxyde, ihr herstellungsverfahren und ihre anwendung. ATE10085T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8015171A FR2486519A1 (fr) 1980-07-08 1980-07-08 Oxydes mixtes d'aluminium, leur procede de fabrication et leur application
EP81401087A EP0043776B1 (de) 1980-07-08 1981-07-07 Aluminiumoxyd enthaltende Mischoxyde, ihr Herstellungsverfahren und ihre Anwendung

Publications (1)

Publication Number Publication Date
ATE10085T1 true ATE10085T1 (de) 1984-11-15

Family

ID=9243984

Family Applications (1)

Application Number Title Priority Date Filing Date
AT81401087T ATE10085T1 (de) 1980-07-08 1981-07-07 Aluminiumoxyd enthaltende mischoxyde, ihr herstellungsverfahren und ihre anwendung.

Country Status (6)

Country Link
US (1) US4606846A (de)
EP (1) EP0043776B1 (de)
JP (1) JPS5792522A (de)
AT (1) ATE10085T1 (de)
DE (1) DE3166946D1 (de)
FR (1) FR2486519A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2588848B1 (fr) * 1985-10-21 1987-11-20 Commissariat Energie Atomique Aluminates mixtes de lanthane-magnesium, leur procede de fabrication et lasers utilisant ces aluminates
IL82361A (en) * 1986-04-30 1990-11-05 American Telephone & Telegraph Device comprising congruently melting complex oxides
FR2599733B1 (fr) * 1986-06-10 1988-08-26 Centre Nat Rech Scient Gallates mixtes de lanthanide-magnesium, laser utilisant des monocristaux de ces gallates
FR2600055B1 (fr) * 1986-06-16 1988-08-26 Commissariat Energie Atomique Aluminates mixtes de lanthanide-magnesium, lasers utilisant des monocristaux de ces aluminates
FR2603051B1 (fr) * 1986-12-05 1988-11-10 Commissariat Energie Atomique Aluminates mixtes de lanthane-magnesium, lasers utilisant des monocristaux de ces aluminates
US4824598A (en) * 1987-10-20 1989-04-25 The United States Of America As Represented By The United States Department Of Energy Synthetic laser medium
FR2659639B1 (fr) * 1990-03-13 1992-06-12 Quartz & Silice Oxydes mixtes de strontium et de lanthanide et laser utilisant des monocristaux de ces oxydes.
US5137852A (en) * 1991-01-11 1992-08-11 Rockwell International Corp. High temperature ceramic composites
DE19807163C1 (de) * 1998-02-20 1999-10-28 Rainer Gadow Wärmedämmaterial und Verfahren zum Herstellen eines solchen
US6297179B1 (en) * 1999-10-18 2001-10-02 Corning Incorporated Transition-metal, glass-ceramic gain media
JP4605729B2 (ja) * 2001-01-19 2011-01-05 信越石英株式会社 透光性セラミックス体及びその製造方法
JP4587350B2 (ja) * 2001-01-19 2010-11-24 信越石英株式会社 透光性セラミックス体の製造方法
JP4235748B2 (ja) * 2002-03-18 2009-03-11 株式会社日立プラズマパテントライセンシング 表示装置
JP4507862B2 (ja) * 2004-12-01 2010-07-21 株式会社日立プラズマパテントライセンシング 蛍光体及びそれを用いた装置
CN101421374A (zh) * 2006-04-11 2009-04-29 皇家飞利浦电子股份有限公司 包含uv-磷光体的放电灯
DE102009050542A1 (de) * 2009-10-23 2011-04-28 Merck Patent Gmbh Sm-aktivierte Aluminat- und Borat-Leuchtstoffe
JP6289381B2 (ja) * 2012-02-08 2018-03-07 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 水酸化物を含む遷移金属炭酸塩の製造方法
US20150247245A1 (en) * 2013-09-30 2015-09-03 Honeywell International Inc. Protective coating systems for gas turbine engine applications and methods for fabricating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR997615A (fr) * 1948-10-14 1952-01-08 Titan Co Inc Boules de rutile et procédé pour leur fabrication
FR1347015A (fr) * 1962-08-10 1963-12-27 Comp Generale Electricite Préparation de monocristaux orientés
US3503006A (en) * 1964-04-30 1970-03-24 Union Carbide Corp Solid state laser device including lanthanum oxide as the host material
NL135101C (de) * 1964-05-14
US3725811A (en) * 1969-09-15 1973-04-03 Westinghouse Electric Corp Laser and fluorescent crystalline materials
JPS521396B2 (de) * 1972-08-25 1977-01-13
NL160869C (nl) * 1972-11-03 Philips Nv Luminescerend scherm, alsmede ontladingslamp en katho- de straalbuis, voorzien van een dergelijk scherm.
JPS512320A (ja) * 1974-05-17 1976-01-09 Matsushita Electric Ind Co Ltd Johodensosochi
NL7809555A (nl) * 1978-09-20 1980-03-24 Philips Nv Werkwijze voor het bereiden van een luminescerend alu- minaat.
NL187212B (nl) * 1978-11-21 1991-02-01 Philips Nv Luminescerend terrair aluminaat; luminescerend scherm; lagedrukkwikdampontladingslamp.
CA1144743A (en) * 1979-06-21 1983-04-19 Charles F. Chenot Ce-doped yttrium aluminum garnet and devices incorporating same
US4249108A (en) * 1979-11-30 1981-02-03 Gte Products Corporation LaMg Aluminate phosphors activated by europium and lamps incorporating same

Also Published As

Publication number Publication date
JPS5792522A (en) 1982-06-09
FR2486519A1 (fr) 1982-01-15
EP0043776A1 (de) 1982-01-13
JPH033606B2 (de) 1991-01-21
FR2486519B1 (de) 1984-10-19
US4606846A (en) 1986-08-19
EP0043776B1 (de) 1984-10-31
DE3166946D1 (en) 1984-12-06

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Legal Events

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UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee