ES2064930T3 - Oxidos mixtos de estroncio y de lantanuro, y laser que utiliza monocristales de estos oxidos. - Google Patents

Oxidos mixtos de estroncio y de lantanuro, y laser que utiliza monocristales de estos oxidos.

Info

Publication number
ES2064930T3
ES2064930T3 ES91400665T ES91400665T ES2064930T3 ES 2064930 T3 ES2064930 T3 ES 2064930T3 ES 91400665 T ES91400665 T ES 91400665T ES 91400665 T ES91400665 T ES 91400665T ES 2064930 T3 ES2064930 T3 ES 2064930T3
Authority
ES
Spain
Prior art keywords
sub
equal
less
trivalent
oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91400665T
Other languages
English (en)
Inventor
Sylvie Alablanche
Jean-Marie Benitez
Robert Collongues
Jeanine Thery
Daniel Vivien
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luxium Solutions SAS
Original Assignee
Crismatec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crismatec SA filed Critical Crismatec SA
Application granted granted Critical
Publication of ES2064930T3 publication Critical patent/ES2064930T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1688—Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Compounds Of Iron (AREA)

Abstract

ESTOS OXIDOS DE ESTRUCTURA CRISTALINA DEL TIPO MAGNETOPLUMBITA PRESENTAN LA SIGUIENTE FORMULA: SR SUB X LN1 SUB Y1 LN2 SUB Y2 LN3 SUB Y3 M SUB Z A SUB A B SUB B O SUB 19K EN LA QUE LN SUB 1 PRESENTA AL MENOS UN ELEMENTO TRIVALENTE ELEGIDO ENTRE EL LANTANO, EL GADOLINIO Y EL ITRIO; LN SUB 2 REPRESENTA AL MENOS UN ELEMENTO TRIVALENTE ELEGIDO ENTRE EL NEODIMIO, EL PRASEODIMIO, EL ERBIO, EL HOLMIO Y EL TULIO; L SUB 3 REPRESENTA UN ELEMENTO ELEGIDO ENTRE EL EUROPIO BIVALENTE O EL CERIO TRIVALENTE CON CONSERVACION DE LA NEUTRALIDAD ELECTRICA GRACIAS A LAGUNAS DE OXIGENO; M REPRESENTA AL MENOS UN METAL BIVALENTE ELEGIDO ENTRE EL MAGNESIO, EL MANGANESO Y EL ZINC; A REPRESENTA AL MENOS UN METAL TRIVALENTE ELEGIDO ENTRE EL ALUMINIO Y EL GALIO; B REPRESENTA UN METAL DE TRANSICION TRIVALENTE ELEGIDO ENTRE EL CROMO Y EL TITANIO; X, Y1, Y2, Y3, Z, A, B Y K REPRESENTAN NUMEROS TALES QUE O<X<1, 0 (MENOR O IGUAL) Y1<1, 0<Y2<1, 0 (MENOR O IGUAL) Y3<1, 0<Z<1, 10,5<A<12, 0 (MENOR O IGUAL) B (MENOR O IGUAL) 0,5Y 0 (MENOR O IGUAL) Y1<1 CON LA CONDICION DE QUE 0<X+Y1+Y2+Y3 (MENOR O IGUAL) 1 Y QUE 11<Z+A+B (MENOR O IGUAL) 12. PRESENTAN EN ESTADO DE MONOCRISTALES (4) PROPIEDADES LASERICAS QUE PERMITEN UTILIZARLOS EN LOS LASERES DE POTENCIA BOMBEADOS POR UN DIODO LASER (6).
ES91400665T 1990-03-13 1991-03-11 Oxidos mixtos de estroncio y de lantanuro, y laser que utiliza monocristales de estos oxidos. Expired - Lifetime ES2064930T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9003180A FR2659639B1 (fr) 1990-03-13 1990-03-13 Oxydes mixtes de strontium et de lanthanide et laser utilisant des monocristaux de ces oxydes.

Publications (1)

Publication Number Publication Date
ES2064930T3 true ES2064930T3 (es) 1995-02-01

Family

ID=9394664

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91400665T Expired - Lifetime ES2064930T3 (es) 1990-03-13 1991-03-11 Oxidos mixtos de estroncio y de lantanuro, y laser que utiliza monocristales de estos oxidos.

Country Status (7)

Country Link
US (1) US5140604A (es)
EP (1) EP0451001B1 (es)
JP (1) JPH04219316A (es)
AT (1) ATE111976T1 (es)
DE (1) DE69104100T2 (es)
ES (1) ES2064930T3 (es)
FR (1) FR2659639B1 (es)

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US5295146A (en) * 1992-04-10 1994-03-15 Polaroid Corporation Solid state gain mediums for optically pumped monolithic laser
US5488619A (en) * 1994-10-06 1996-01-30 Trw Inc. Ultracompact Q-switched microlasers and related method
US5541948A (en) * 1994-11-28 1996-07-30 The Regents Of The University Of California Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers
US5571451A (en) * 1995-01-03 1996-11-05 General Electric Company Quantum splitting oxide phosphor and method of making
DE69517496T2 (de) * 1995-01-03 2001-03-01 General Electric Co., Schenectady Quantum-Teilungs-Oxidphosphoren und Verfahren zur Herstellung desselben
US5788883A (en) * 1996-03-29 1998-08-04 General Electric Company Determination process for determining if quantum splitting phosphors are obtained and novel compositions
US5977162A (en) * 1996-09-16 1999-11-02 Seidman; Michael D. Therapeutic treatment for auditory function
EP1333548A3 (en) * 2002-02-01 2005-03-16 Nec Tokin Corporation Laser oscillation method and laser device
US6982045B2 (en) * 2003-05-17 2006-01-03 Phosphortech Corporation Light emitting device having silicate fluorescent phosphor
US7112921B2 (en) * 2003-08-02 2006-09-26 Phosphortech Inc. Light emitting device having selenium-based fluorescent phosphor
US6987353B2 (en) * 2003-08-02 2006-01-17 Phosphortech Corporation Light emitting device having sulfoselenide fluorescent phosphor
US7109648B2 (en) * 2003-08-02 2006-09-19 Phosphortech Inc. Light emitting device having thio-selenide fluorescent phosphor
US20060133826A1 (en) * 2004-12-22 2006-06-22 Cisco Technology, Inc. Adaptive receiver for APD based modules
US20060221022A1 (en) * 2005-04-01 2006-10-05 Roger Hajjar Laser vector scanner systems with display screens having optical fluorescent materials
US7733310B2 (en) 2005-04-01 2010-06-08 Prysm, Inc. Display screens having optical fluorescent materials
US7474286B2 (en) 2005-04-01 2009-01-06 Spudnik, Inc. Laser displays using UV-excitable phosphors emitting visible colored light
US7791561B2 (en) * 2005-04-01 2010-09-07 Prysm, Inc. Display systems having screens with optical fluorescent materials
US7994702B2 (en) 2005-04-27 2011-08-09 Prysm, Inc. Scanning beams displays based on light-emitting screens having phosphors
US8000005B2 (en) 2006-03-31 2011-08-16 Prysm, Inc. Multilayered fluorescent screens for scanning beam display systems
US8089425B2 (en) 2006-03-03 2012-01-03 Prysm, Inc. Optical designs for scanning beam display systems using fluorescent screens
US7435358B2 (en) * 2005-06-07 2008-10-14 Osram Sylvania Inc. UVC-emitting Sr(Al,Mg)12O19:Pr phosphor and lamp containing same
US8451195B2 (en) 2006-02-15 2013-05-28 Prysm, Inc. Servo-assisted scanning beam display systems using fluorescent screens
US7884816B2 (en) 2006-02-15 2011-02-08 Prysm, Inc. Correcting pyramidal error of polygon scanner in scanning beam display systems
US7449129B2 (en) * 2006-03-07 2008-11-11 Osram Sylvania Inc. Ce,Pr-coactivated strontium magnesium aluminate phosphor and lamp containing same
US7419621B2 (en) * 2006-03-07 2008-09-02 Osram Sylvania Inc. UV-emitting phosphor and lamp containing same
CN101460880B (zh) 2006-05-05 2012-05-23 Prysm公司 用于显示系统和装置的磷光体组合物和其它荧光材料
US20080068295A1 (en) * 2006-09-19 2008-03-20 Hajjar Roger A Compensation for Spatial Variation in Displayed Image in Scanning Beam Display Systems Using Light-Emitting Screens
US8013506B2 (en) 2006-12-12 2011-09-06 Prysm, Inc. Organic compounds for adjusting phosphor chromaticity
US9525850B2 (en) * 2007-03-20 2016-12-20 Prysm, Inc. Delivering and displaying advertisement or other application data to display systems
US8169454B1 (en) 2007-04-06 2012-05-01 Prysm, Inc. Patterning a surface using pre-objective and post-objective raster scanning systems
US7697183B2 (en) 2007-04-06 2010-04-13 Prysm, Inc. Post-objective scanning beam systems
CN101688979B (zh) 2007-05-17 2011-02-09 Prysm公司 用于扫描光束显示系统的具有发光带的多层屏幕
US7878657B2 (en) 2007-06-27 2011-02-01 Prysm, Inc. Servo feedback control based on invisible scanning servo beam in scanning beam display systems with light-emitting screens
US8556430B2 (en) 2007-06-27 2013-10-15 Prysm, Inc. Servo feedback control based on designated scanning servo beam in scanning beam display systems with light-emitting screens
US7869112B2 (en) * 2008-07-25 2011-01-11 Prysm, Inc. Beam scanning based on two-dimensional polygon scanner for display and other applications
RU2749153C1 (ru) * 2020-11-02 2021-06-07 Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" Способ создания композитного лазерного элемента на основе оксидных кристаллов
CN115746842B (zh) * 2022-11-01 2023-10-03 五邑大学 一种荧光粉及其制备方法和应用
CN118326512A (zh) * 2024-04-15 2024-07-12 江苏师范大学 一种掺稀土离子的铝酸镁镧锶激光单晶光纤及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2486519A1 (fr) * 1980-07-08 1982-01-15 Centre Nat Rech Scient Oxydes mixtes d'aluminium, leur procede de fabrication et leur application
FR2588848B1 (fr) * 1985-10-21 1987-11-20 Commissariat Energie Atomique Aluminates mixtes de lanthane-magnesium, leur procede de fabrication et lasers utilisant ces aluminates
FR2599733B1 (fr) * 1986-06-10 1988-08-26 Centre Nat Rech Scient Gallates mixtes de lanthanide-magnesium, laser utilisant des monocristaux de ces gallates
FR2600055B1 (fr) * 1986-06-16 1988-08-26 Commissariat Energie Atomique Aluminates mixtes de lanthanide-magnesium, lasers utilisant des monocristaux de ces aluminates

Also Published As

Publication number Publication date
FR2659639A1 (fr) 1991-09-20
EP0451001A1 (fr) 1991-10-09
JPH04219316A (ja) 1992-08-10
EP0451001B1 (fr) 1994-09-21
DE69104100T2 (de) 1995-05-11
US5140604A (en) 1992-08-18
DE69104100D1 (de) 1994-10-27
ATE111976T1 (de) 1994-10-15
FR2659639B1 (fr) 1992-06-12

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