AT518796A3 - Verfahren zum Beschichten eines Substrats sowie Beschichtungsanlage - Google Patents

Verfahren zum Beschichten eines Substrats sowie Beschichtungsanlage Download PDF

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Publication number
AT518796A3
AT518796A3 ATA50507/2017A AT505072017A AT518796A3 AT 518796 A3 AT518796 A3 AT 518796A3 AT 505072017 A AT505072017 A AT 505072017A AT 518796 A3 AT518796 A3 AT 518796A3
Authority
AT
Austria
Prior art keywords
substrate
coating
gas flow
coating material
bead
Prior art date
Application number
ATA50507/2017A
Other languages
English (en)
Other versions
AT518796B1 (de
AT518796A2 (de
Original Assignee
Suss Microtec Lithography Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suss Microtec Lithography Gmbh filed Critical Suss Microtec Lithography Gmbh
Publication of AT518796A2 publication Critical patent/AT518796A2/de
Publication of AT518796A3 publication Critical patent/AT518796A3/de
Application granted granted Critical
Publication of AT518796B1 publication Critical patent/AT518796B1/de

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/007—After-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

Zum Beschichten eines Substrats (12) mit einem Beschichtungsmaterial, insbesondere mit einem Lack bzw. Fotolack, wird das Beschichtungsmaterial auf die Oberseite (22) des Substrats (12) aufgebracht. Ein Gasstrom wird erzeugt, der ausgehend von der Unterseite (18) des Substrats (12) zur Oberseite (22) des Substrats (12) gerichtet ist, wobei der Gasstrom verhindert, dass sich ein Wulst des Beschichtungsmaterials am Rand (26) der Oberseite (22) des Substrats (12) bildet bzw. ein bereits entstandener Wulst durch den Gasstrom entfernt wird. Ferner ist eine Beschichtungsanlage (10) beschrieben.
ATA50507/2017A 2016-06-27 2017-06-19 Verfahren zum Beschichten eines Substrats sowie Beschichtungsanlage AT518796B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL2017053A NL2017053B1 (en) 2016-06-27 2016-06-27 Method for coating a substrate and also a coating system

Publications (3)

Publication Number Publication Date
AT518796A2 AT518796A2 (de) 2018-01-15
AT518796A3 true AT518796A3 (de) 2021-05-15
AT518796B1 AT518796B1 (de) 2022-09-15

Family

ID=57042941

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA50507/2017A AT518796B1 (de) 2016-06-27 2017-06-19 Verfahren zum Beschichten eines Substrats sowie Beschichtungsanlage

Country Status (8)

Country Link
US (1) US10596592B2 (de)
JP (1) JP6961397B2 (de)
KR (1) KR102351232B1 (de)
CN (1) CN107544211B (de)
AT (1) AT518796B1 (de)
DE (1) DE102017113676A1 (de)
NL (1) NL2017053B1 (de)
TW (1) TWI710409B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108580202A (zh) * 2018-07-03 2018-09-28 力信（江苏）能源科技有限责任公司 一种锂离子电池用吹气设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4790262A (en) * 1985-10-07 1988-12-13 Tokyo Denshi Kagaku Co., Ltd. Thin-film coating apparatus
US20040126923A1 (en) * 2002-12-31 2004-07-01 Micron Technology, Inc. Non-chemical, non-optical edge bead removal process
EP1458015A2 (de) * 2003-03-11 2004-09-15 Samsung Electronics Co., Ltd. Vorrichtung zur Schleuderbeschichtung zur Beschichtung mit einem Photolack
US20090277379A1 (en) * 2006-09-29 2009-11-12 National University Corporation Tohoku University Film coating apparatus
KR20100078033A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 반도체 소자의 제조 장치 및 그 방법

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US5398372A (en) * 1993-10-29 1995-03-21 Kaiser Aluminum & Chemical Corporation Liquid edge bead removal device
JPH0945611A (ja) * 1995-07-27 1997-02-14 Dainippon Screen Mfg Co Ltd 回転式基板塗布装置
US5725663A (en) * 1996-01-31 1998-03-10 Solitec Wafer Processing, Inc. Apparatus for control of contamination in spin systems
JP3300624B2 (ja) * 1997-01-24 2002-07-08 東京エレクトロン株式会社 基板端面の洗浄方法
JPH10261579A (ja) * 1997-03-21 1998-09-29 Matsushita Electron Corp レジスト塗布装置及びレジスト塗布方法
JP2001070859A (ja) * 1999-09-06 2001-03-21 Takata Corp 薄板円板素材の保持構造
GB0113783D0 (en) * 2001-06-06 2001-07-25 Int Coatings Ltd Powder coating process
JP3658355B2 (ja) * 2001-10-03 2005-06-08 Ｈｏｙａ株式会社 塗布膜の乾燥方法、塗布膜の形成方法、及び塗布膜形成装置
JP3983643B2 (ja) * 2002-10-16 2007-09-26 大日本スクリーン製造株式会社 基板処理装置および基板処理システム
KR100646417B1 (ko) * 2004-10-15 2006-11-15 세메스 주식회사 반도체 기판의 가장자리부 처리 장치
JP2007048814A (ja) * 2005-08-08 2007-02-22 Mitsubishi Electric Corp 基板保持装置、半導体製造装置及び半導体装置の製造方法
CN101354534B (zh) * 2007-07-27 2011-07-06 中芯国际集成电路制造(上海)有限公司 光刻胶的涂布方法及光刻图形的形成方法
JP5012651B2 (ja) * 2008-05-14 2012-08-29 東京エレクトロン株式会社 塗布装置、塗布方法、塗布、現像装置及び記憶媒体
KR20100085667A (ko) * 2009-01-21 2010-07-29 주식회사 하이닉스반도체 웨이퍼 회전 장치
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JP6807162B2 (ja) * 2016-04-13 2021-01-06 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及びコンピュータ読み取り可能な記録媒体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4790262A (en) * 1985-10-07 1988-12-13 Tokyo Denshi Kagaku Co., Ltd. Thin-film coating apparatus
US20040126923A1 (en) * 2002-12-31 2004-07-01 Micron Technology, Inc. Non-chemical, non-optical edge bead removal process
EP1458015A2 (de) * 2003-03-11 2004-09-15 Samsung Electronics Co., Ltd. Vorrichtung zur Schleuderbeschichtung zur Beschichtung mit einem Photolack
US20090277379A1 (en) * 2006-09-29 2009-11-12 National University Corporation Tohoku University Film coating apparatus
KR20100078033A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 반도체 소자의 제조 장치 및 그 방법

Also Published As

Publication number Publication date
TWI710409B (zh) 2020-11-21
AT518796B1 (de) 2022-09-15
JP6961397B2 (ja) 2021-11-05
KR102351232B1 (ko) 2022-01-13
US20170368567A1 (en) 2017-12-28
KR20180001496A (ko) 2018-01-04
CN107544211B (zh) 2022-06-28
CN107544211A (zh) 2018-01-05
JP2018001155A (ja) 2018-01-11
DE102017113676A1 (de) 2017-12-28
NL2017053B1 (en) 2018-01-05
US10596592B2 (en) 2020-03-24
AT518796A2 (de) 2018-01-15
TW201803649A (zh) 2018-02-01

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