AT503838B1 - Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht - Google Patents

Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht Download PDF

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Publication number
AT503838B1
AT503838B1 AT0106006A AT10602006A AT503838B1 AT 503838 B1 AT503838 B1 AT 503838B1 AT 0106006 A AT0106006 A AT 0106006A AT 10602006 A AT10602006 A AT 10602006A AT 503838 B1 AT503838 B1 AT 503838B1
Authority
AT
Austria
Prior art keywords
inorganic semiconductor
semiconductor particles
layer
alivisatos
solar cells
Prior art date
Application number
AT0106006A
Other languages
German (de)
English (en)
Other versions
AT503838A1 (de
Inventor
Monika Sofie Dipl Ing Piber
Gregor Dipl Ing Dr Trimmel
Franz Dipl Ing Dr Stelzer
Thomas Dipl Ing Rath
Albert K Dipl Ing Dr Plessing
Dieter Dr Meissner
Original Assignee
Isovolta
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to AT0106006A priority Critical patent/AT503838B1/de
Application filed by Isovolta filed Critical Isovolta
Priority to CNA200780023318XA priority patent/CN101473463A/zh
Priority to CA002654575A priority patent/CA2654575A1/en
Priority to BRPI0713723-0A priority patent/BRPI0713723A2/pt
Priority to PCT/AT2007/000294 priority patent/WO2007147182A1/de
Priority to US12/306,120 priority patent/US20090188548A1/en
Priority to JP2009515667A priority patent/JP2009541974A/ja
Priority to EP07718503A priority patent/EP2030265A1/de
Priority to KR1020097000309A priority patent/KR20090042899A/ko
Priority to MX2008016102A priority patent/MX2008016102A/es
Publication of AT503838A1 publication Critical patent/AT503838A1/de
Application granted granted Critical
Publication of AT503838B1 publication Critical patent/AT503838B1/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photovoltaic Devices (AREA)
AT0106006A 2006-06-22 2006-06-22 Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht AT503838B1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
AT0106006A AT503838B1 (de) 2006-06-22 2006-06-22 Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht
CA002654575A CA2654575A1 (en) 2006-06-22 2007-06-18 Method for producing a layer containing inorganic semiconductor particles, and components comprising said layer
BRPI0713723-0A BRPI0713723A2 (pt) 2006-06-22 2007-06-18 processo de produção de uma camada contendo partìculas semicon-dutoras inorgánicas assim como componentes que constituem essa camada
PCT/AT2007/000294 WO2007147182A1 (de) 2006-06-22 2007-06-18 Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht
CNA200780023318XA CN101473463A (zh) 2006-06-22 2007-06-18 制备含无机半导体颗粒的层的方法以及包含该层的器件
US12/306,120 US20090188548A1 (en) 2006-06-22 2007-06-18 Method for producing a layer containing inorganic semiconductor particles, and components comprising said layer
JP2009515667A JP2009541974A (ja) 2006-06-22 2007-06-18 無機半導体粒子含有層を製造する方法並びに該層を含んでなる構成要素
EP07718503A EP2030265A1 (de) 2006-06-22 2007-06-18 Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht
KR1020097000309A KR20090042899A (ko) 2006-06-22 2007-06-18 무기질 반도체 입자 함유 층 및 이 층을 포함하는 부품의 생산공정
MX2008016102A MX2008016102A (es) 2006-06-22 2007-06-18 Proceso para la produccion de una capa que contiene particulas semiconductoras inorganicas, asi como componentes que comprenden esta capa.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0106006A AT503838B1 (de) 2006-06-22 2006-06-22 Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht

Publications (2)

Publication Number Publication Date
AT503838A1 AT503838A1 (de) 2008-01-15
AT503838B1 true AT503838B1 (de) 2008-11-15

Family

ID=38595815

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0106006A AT503838B1 (de) 2006-06-22 2006-06-22 Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht

Country Status (10)

Country Link
US (1) US20090188548A1 (https=)
EP (1) EP2030265A1 (https=)
JP (1) JP2009541974A (https=)
KR (1) KR20090042899A (https=)
CN (1) CN101473463A (https=)
AT (1) AT503838B1 (https=)
BR (1) BRPI0713723A2 (https=)
CA (1) CA2654575A1 (https=)
MX (1) MX2008016102A (https=)
WO (1) WO2007147182A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011085425A1 (de) 2010-01-18 2011-07-21 Isovoltaic Ag LÖSUNGEN FÜR DIE HERSTELLUNG HOMOGENER GROßFLÄCHIGER PHOTOAKTIVER SCHICHTEN BESTEHEND AUS EINEM ELEKTROAKTIVEN POLYMER UND HALBLEITERNANOPARTIKELN UND DEREN ANWENDUNG IN DER PHOTOVOLTAIK UND OPTOELEKTRONIK

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101671847B (zh) * 2009-10-20 2011-10-12 山东大学 硫族化合物多晶原料的两步合成方法
JP5665692B2 (ja) * 2011-08-23 2015-02-04 京セラ株式会社 半導体層の製造方法および光電変換装置の製造方法
CN105355795A (zh) * 2015-12-01 2016-02-24 电子科技大学 基于共轭聚合物-纳米晶叠层式自装配功能薄膜的光电探测器阵列制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060009021A1 (en) * 2004-07-06 2006-01-12 Herman Gregory S Structure formation

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
DE19905694A1 (de) 1998-11-27 2000-08-17 Forschungszentrum Juelich Gmbh Bauelement
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
TWI273091B (en) * 2002-09-06 2007-02-11 Masakazu Kobayashi Compound semiconductor particles and production process thereof
US20050036938A1 (en) * 2003-08-13 2005-02-17 Taegwhan Hyeon Method for synthesizing nanoparticles of metal sulfides
WO2005107047A2 (en) * 2004-04-26 2005-11-10 The Regents Of The University Of California Functionalized electroactive polymers
US7772487B1 (en) * 2004-10-16 2010-08-10 Nanosolar, Inc. Photovoltaic cell with enhanced energy transfer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060009021A1 (en) * 2004-07-06 2006-01-12 Herman Gregory S Structure formation

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ARICI, E. ET AL. ''HYBRID SOLAR CELLS BASED ON NANOPARTICLES OF CULNS2 IN ORGANIC MATRICES'' ADVANCED FUNCTIONAL MATERIALS. VOL. 13, NO. 2, S. 165 *
KHANNA, P.K. ET AL. ''THE PROCESSING OF CDSE/POLYMER NANOCOMPOSITES VIA SOLUTION ORGANOMETALLIC CHEMISTRY'' MATERIALS CHEMISTRY AND PHYSICS. VOL. 97, S. 288 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011085425A1 (de) 2010-01-18 2011-07-21 Isovoltaic Ag LÖSUNGEN FÜR DIE HERSTELLUNG HOMOGENER GROßFLÄCHIGER PHOTOAKTIVER SCHICHTEN BESTEHEND AUS EINEM ELEKTROAKTIVEN POLYMER UND HALBLEITERNANOPARTIKELN UND DEREN ANWENDUNG IN DER PHOTOVOLTAIK UND OPTOELEKTRONIK

Also Published As

Publication number Publication date
US20090188548A1 (en) 2009-07-30
MX2008016102A (es) 2009-01-15
CN101473463A (zh) 2009-07-01
CA2654575A1 (en) 2007-12-27
WO2007147182A1 (de) 2007-12-27
AT503838A1 (de) 2008-01-15
JP2009541974A (ja) 2009-11-26
BRPI0713723A2 (pt) 2012-10-30
EP2030265A1 (de) 2009-03-04
KR20090042899A (ko) 2009-05-04

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Effective date: 20130622