JP2009541974A - 無機半導体粒子含有層を製造する方法並びに該層を含んでなる構成要素 - Google Patents

無機半導体粒子含有層を製造する方法並びに該層を含んでなる構成要素 Download PDF

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Publication number
JP2009541974A
JP2009541974A JP2009515667A JP2009515667A JP2009541974A JP 2009541974 A JP2009541974 A JP 2009541974A JP 2009515667 A JP2009515667 A JP 2009515667A JP 2009515667 A JP2009515667 A JP 2009515667A JP 2009541974 A JP2009541974 A JP 2009541974A
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Prior art keywords
inorganic semiconductor
layer
semiconductor
component
semiconductor particles
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JP2009515667A
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Japanese (ja)
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JP2009541974A5 (https=
Inventor
ピベル，モニカ・ソフイー
トリメル，グレゴル
ステルツアー，フランツ
ラス，トマス
プレシンク，アルベール・ケイ
マイズナー，デイーター
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Isovolta AG
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Isovolta AG
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Publication of JP2009541974A publication Critical patent/JP2009541974A/ja
Publication of JP2009541974A5 publication Critical patent/JP2009541974A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photovoltaic Devices (AREA)
JP2009515667A 2006-06-22 2007-06-18 無機半導体粒子含有層を製造する方法並びに該層を含んでなる構成要素 Pending JP2009541974A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT0106006A AT503838B1 (de) 2006-06-22 2006-06-22 Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht
PCT/AT2007/000294 WO2007147182A1 (de) 2006-06-22 2007-06-18 Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht

Publications (2)

Publication Number Publication Date
JP2009541974A true JP2009541974A (ja) 2009-11-26
JP2009541974A5 JP2009541974A5 (https=) 2012-11-29

Family

ID=38595815

Family Applications (1)

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JP2009515667A Pending JP2009541974A (ja) 2006-06-22 2007-06-18 無機半導体粒子含有層を製造する方法並びに該層を含んでなる構成要素

Country Status (10)

Country Link
US (1) US20090188548A1 (https=)
EP (1) EP2030265A1 (https=)
JP (1) JP2009541974A (https=)
KR (1) KR20090042899A (https=)
CN (1) CN101473463A (https=)
AT (1) AT503838B1 (https=)
BR (1) BRPI0713723A2 (https=)
CA (1) CA2654575A1 (https=)
MX (1) MX2008016102A (https=)
WO (1) WO2007147182A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013045831A (ja) * 2011-08-23 2013-03-04 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101671847B (zh) * 2009-10-20 2011-10-12 山东大学 硫族化合物多晶原料的两步合成方法
AT13264U1 (de) 2010-01-18 2013-09-15 Isovoltaic Ag Lösungen für die Herstellung homogener großflächiger photoaktiver Schichten bestehend aus einem elektroaktiven Polymer und Halbleiternanopartikeln und deren Anwendung in der Photovoltaik und Optoelektronik
CN105355795A (zh) * 2015-12-01 2016-02-24 电子科技大学 基于共轭聚合物-纳米晶叠层式自装配功能薄膜的光电探测器阵列制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050133087A1 (en) * 2001-10-24 2005-06-23 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
WO2005107047A2 (en) * 2004-04-26 2005-11-10 The Regents Of The University Of California Functionalized electroactive polymers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19905694A1 (de) 1998-11-27 2000-08-17 Forschungszentrum Juelich Gmbh Bauelement
TWI273091B (en) * 2002-09-06 2007-02-11 Masakazu Kobayashi Compound semiconductor particles and production process thereof
US20050036938A1 (en) * 2003-08-13 2005-02-17 Taegwhan Hyeon Method for synthesizing nanoparticles of metal sulfides
US7547647B2 (en) * 2004-07-06 2009-06-16 Hewlett-Packard Development Company, L.P. Method of making a structure
US7772487B1 (en) * 2004-10-16 2010-08-10 Nanosolar, Inc. Photovoltaic cell with enhanced energy transfer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050133087A1 (en) * 2001-10-24 2005-06-23 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
WO2005107047A2 (en) * 2004-04-26 2005-11-10 The Regents Of The University Of California Functionalized electroactive polymers

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JPN5009008246; ＶＡＮ　ＨＡＬ: ＡＤＶＡＮＣＥＤ　ＭＡＴＥＲＩＡＬＳ Ｖ１５　Ｎ２, 20030116, Ｐ１１８-１２１ *
JPN5009008247; ＱＵＩＳＴ: ＳＵＰＥＲＬＡＴＴＩＣＥＳ　ＡＮＤ　ＭＩＣＲＯＳＴＲＵＣＴＵＲＥＳ Ｖ３８　Ｎ４-６, 200510, Ｐ３０８-３１６, ＡＣＡＤＥＭＩＣ　ＰＲＥＳＳ *
JPN5009008248; ＳＵＮ: ＮＡＮＯＬＥＴＴＥＲＳ Ｖ３　Ｎ７, 20030610, Ｐ９６１-９６３ *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013045831A (ja) * 2011-08-23 2013-03-04 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法

Also Published As

Publication number Publication date
US20090188548A1 (en) 2009-07-30
AT503838B1 (de) 2008-11-15
MX2008016102A (es) 2009-01-15
CN101473463A (zh) 2009-07-01
CA2654575A1 (en) 2007-12-27
WO2007147182A1 (de) 2007-12-27
AT503838A1 (de) 2008-01-15
BRPI0713723A2 (pt) 2012-10-30
EP2030265A1 (de) 2009-03-04
KR20090042899A (ko) 2009-05-04

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