AT353320B - Integrierte schaltung in einer silizium -gatter-technologie, insbesondere speicher- schaltung mit ein-transistor-elementen - Google Patents

Integrierte schaltung in einer silizium -gatter-technologie, insbesondere speicher- schaltung mit ein-transistor-elementen

Info

Publication number
AT353320B
AT353320B AT925373A AT925373A AT353320B AT 353320 B AT353320 B AT 353320B AT 925373 A AT925373 A AT 925373A AT 925373 A AT925373 A AT 925373A AT 353320 B AT353320 B AT 353320B
Authority
AT
Austria
Prior art keywords
particular memory
transistor elements
single transistor
silicon gate
integrated circuit
Prior art date
Application number
AT925373A
Other languages
English (en)
Other versions
ATA925373A (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722255529 external-priority patent/DE2255529C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Priority to AT0977374A priority Critical patent/AT371629B/de
Publication of ATA925373A publication Critical patent/ATA925373A/de
Application granted granted Critical
Publication of AT353320B publication Critical patent/AT353320B/de

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT925373A 1972-11-13 1973-11-02 Integrierte schaltung in einer silizium -gatter-technologie, insbesondere speicher- schaltung mit ein-transistor-elementen AT353320B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT0977374A AT371629B (de) 1972-11-13 1974-12-06 Integrierte schaltung fuer eine speichermatrix in einer silizium-gatter-technologie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722255529 DE2255529C3 (de) 1972-11-13 Integrierte Schaltung in einer Feldeffekt-(M IS) -Technologie, insbesondere Speicherschaltung mit EinTransistor-Elementen

Publications (2)

Publication Number Publication Date
ATA925373A ATA925373A (de) 1979-04-15
AT353320B true AT353320B (de) 1979-11-12

Family

ID=5861573

Family Applications (1)

Application Number Title Priority Date Filing Date
AT925373A AT353320B (de) 1972-11-13 1973-11-02 Integrierte schaltung in einer silizium -gatter-technologie, insbesondere speicher- schaltung mit ein-transistor-elementen

Country Status (11)

Country Link
JP (1) JPS5653860B2 (de)
AT (1) AT353320B (de)
BE (1) BE807242A (de)
CA (1) CA997073A (de)
CH (1) CH563667A5 (de)
FR (1) FR2206584B3 (de)
GB (1) GB1441004A (de)
IT (1) IT999250B (de)
LU (1) LU68786A1 (de)
NL (1) NL7315203A (de)
SE (1) SE395559B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1135038B (it) * 1980-01-28 1986-08-20 Rca Corp Apparato per unire elettricamente le estremita' di linee di materiale semiconduttore,sostanzialmente parallele
JPS58212165A (ja) * 1983-05-23 1983-12-09 Nec Corp 半導体装置

Also Published As

Publication number Publication date
IT999250B (it) 1976-02-20
GB1441004A (en) 1976-06-30
BE807242A (fr) 1974-05-13
FR2206584A1 (de) 1974-06-07
FR2206584B3 (de) 1978-03-10
CA997073A (en) 1976-09-14
CH563667A5 (de) 1975-06-30
DE2255529A1 (de) 1974-05-30
LU68786A1 (de) 1974-01-21
NL7315203A (de) 1974-05-15
DE2255529B2 (de) 1976-01-22
JPS5653860B2 (de) 1981-12-22
ATA925373A (de) 1979-04-15
SE395559B (sv) 1977-08-15
JPS49100985A (de) 1974-09-24

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee