AT339377B - Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistoren - Google Patents
Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistorenInfo
- Publication number
- AT339377B AT339377B AT217274A AT217274A AT339377B AT 339377 B AT339377 B AT 339377B AT 217274 A AT217274 A AT 217274A AT 217274 A AT217274 A AT 217274A AT 339377 B AT339377 B AT 339377B
- Authority
- AT
- Austria
- Prior art keywords
- field effect
- integrated circuits
- effect transistors
- channel field
- producing integrated
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2316095A DE2316095A1 (de) | 1973-03-30 | 1973-03-30 | Verfahren zur herstellung integrierter schaltungen mit komplementaer-kanal-feldeffekttransistoren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA217274A ATA217274A (de) | 1977-02-15 |
| AT339377B true AT339377B (de) | 1977-10-10 |
Family
ID=5876571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT217274A AT339377B (de) | 1973-03-30 | 1974-03-15 | Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistoren |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3919765A (de) |
| JP (1) | JPS49131085A (de) |
| AT (1) | AT339377B (de) |
| BE (1) | BE813051A (de) |
| CA (1) | CA1005175A (de) |
| CH (1) | CH570042A5 (de) |
| DE (1) | DE2316095A1 (de) |
| FR (1) | FR2223838B1 (de) |
| GB (1) | GB1443480A (de) |
| IT (1) | IT1011152B (de) |
| LU (1) | LU69729A1 (de) |
| NL (1) | NL7404337A (de) |
| SE (1) | SE386542B (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2450408A1 (de) * | 1974-10-23 | 1976-04-29 | Siemens Ag | Schaltungsanordnung in einer komplementaer-chl-technik |
| US4043025A (en) * | 1975-05-08 | 1977-08-23 | National Semiconductor Corporation | Self-aligned CMOS process for bulk silicon and insulating substrate device |
| AT380974B (de) * | 1982-04-06 | 1986-08-11 | Shell Austria | Verfahren zum gettern von halbleiterbauelementen |
| JP3562588B2 (ja) * | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
| JP3193803B2 (ja) * | 1993-03-12 | 2001-07-30 | 株式会社半導体エネルギー研究所 | 半導体素子の作製方法 |
| KR100226730B1 (ko) * | 1997-04-24 | 1999-10-15 | 구본준 | 씨모스펫 및 그 제조방법 |
| KR100492943B1 (ko) | 1997-10-15 | 2005-06-02 | 사이스 푸어 가스 인코포레이티드 | 안전장치를 구비한 가스정화시스템 및 가스정화방법 |
| US6068685A (en) * | 1997-10-15 | 2000-05-30 | Saes Pure Gas, Inc. | Semiconductor manufacturing system with getter safety device |
| US6236089B1 (en) | 1998-01-07 | 2001-05-22 | Lg Semicon Co., Ltd. | CMOSFET and method for fabricating the same |
| US8481372B2 (en) * | 2008-12-11 | 2013-07-09 | Micron Technology, Inc. | JFET device structures and methods for fabricating the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3673679A (en) * | 1970-12-01 | 1972-07-04 | Texas Instruments Inc | Complementary insulated gate field effect devices |
| US3783052A (en) * | 1972-11-10 | 1974-01-01 | Motorola Inc | Process for manufacturing integrated circuits on an alumina substrate |
| US3837071A (en) * | 1973-01-16 | 1974-09-24 | Rca Corp | Method of simultaneously making a sigfet and a mosfet |
-
1973
- 1973-03-30 DE DE2316095A patent/DE2316095A1/de active Pending
-
1974
- 1974-03-15 AT AT217274A patent/AT339377B/de active
- 1974-03-21 FR FR7409676A patent/FR2223838B1/fr not_active Expired
- 1974-03-22 CH CH402674A patent/CH570042A5/xx not_active IP Right Cessation
- 1974-03-26 IT IT49644/74A patent/IT1011152B/it active
- 1974-03-27 GB GB1364974A patent/GB1443480A/en not_active Expired
- 1974-03-28 SE SE7404192A patent/SE386542B/xx unknown
- 1974-03-28 US US455590A patent/US3919765A/en not_active Expired - Lifetime
- 1974-03-28 LU LU69729A patent/LU69729A1/xx unknown
- 1974-03-29 BE BE142638A patent/BE813051A/xx unknown
- 1974-03-29 NL NL7404337A patent/NL7404337A/xx unknown
- 1974-03-29 CA CA196,349A patent/CA1005175A/en not_active Expired
- 1974-03-29 JP JP49035479A patent/JPS49131085A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2316095A1 (de) | 1974-10-10 |
| US3919765A (en) | 1975-11-18 |
| FR2223838A1 (de) | 1974-10-25 |
| FR2223838B1 (de) | 1978-11-10 |
| NL7404337A (de) | 1974-10-02 |
| JPS49131085A (de) | 1974-12-16 |
| CH570042A5 (de) | 1975-11-28 |
| ATA217274A (de) | 1977-02-15 |
| CA1005175A (en) | 1977-02-08 |
| GB1443480A (en) | 1976-07-21 |
| LU69729A1 (de) | 1974-07-17 |
| IT1011152B (it) | 1977-01-20 |
| SE386542B (sv) | 1976-08-09 |
| BE813051A (fr) | 1974-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |