AT339377B - Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistoren - Google Patents

Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistoren

Info

Publication number
AT339377B
AT339377B AT217274A AT217274A AT339377B AT 339377 B AT339377 B AT 339377B AT 217274 A AT217274 A AT 217274A AT 217274 A AT217274 A AT 217274A AT 339377 B AT339377 B AT 339377B
Authority
AT
Austria
Prior art keywords
field effect
integrated circuits
effect transistors
channel field
producing integrated
Prior art date
Application number
AT217274A
Other languages
English (en)
Other versions
ATA217274A (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA217274A publication Critical patent/ATA217274A/de
Application granted granted Critical
Publication of AT339377B publication Critical patent/AT339377B/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/03Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/06Gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
AT217274A 1973-03-30 1974-03-15 Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistoren AT339377B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316095A DE2316095A1 (de) 1973-03-30 1973-03-30 Verfahren zur herstellung integrierter schaltungen mit komplementaer-kanal-feldeffekttransistoren

Publications (2)

Publication Number Publication Date
ATA217274A ATA217274A (de) 1977-02-15
AT339377B true AT339377B (de) 1977-10-10

Family

ID=5876571

Family Applications (1)

Application Number Title Priority Date Filing Date
AT217274A AT339377B (de) 1973-03-30 1974-03-15 Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistoren

Country Status (13)

Country Link
US (1) US3919765A (de)
JP (1) JPS49131085A (de)
AT (1) AT339377B (de)
BE (1) BE813051A (de)
CA (1) CA1005175A (de)
CH (1) CH570042A5 (de)
DE (1) DE2316095A1 (de)
FR (1) FR2223838B1 (de)
GB (1) GB1443480A (de)
IT (1) IT1011152B (de)
LU (1) LU69729A1 (de)
NL (1) NL7404337A (de)
SE (1) SE386542B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450408A1 (de) * 1974-10-23 1976-04-29 Siemens Ag Schaltungsanordnung in einer komplementaer-chl-technik
US4043025A (en) * 1975-05-08 1977-08-23 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
KR100226730B1 (ko) * 1997-04-24 1999-10-15 구본준 씨모스펫 및 그 제조방법
KR100492943B1 (ko) 1997-10-15 2005-06-02 사이스 푸어 가스 인코포레이티드 안전장치를 구비한 가스정화시스템 및 가스정화방법
US6068685A (en) * 1997-10-15 2000-05-30 Saes Pure Gas, Inc. Semiconductor manufacturing system with getter safety device
US6236089B1 (en) 1998-01-07 2001-05-22 Lg Semicon Co., Ltd. CMOSFET and method for fabricating the same
US8481372B2 (en) * 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet

Also Published As

Publication number Publication date
DE2316095A1 (de) 1974-10-10
US3919765A (en) 1975-11-18
FR2223838A1 (de) 1974-10-25
FR2223838B1 (de) 1978-11-10
NL7404337A (de) 1974-10-02
JPS49131085A (de) 1974-12-16
CH570042A5 (de) 1975-11-28
ATA217274A (de) 1977-02-15
CA1005175A (en) 1977-02-08
GB1443480A (en) 1976-07-21
LU69729A1 (de) 1974-07-17
IT1011152B (it) 1977-01-20
SE386542B (sv) 1976-08-09
BE813051A (fr) 1974-07-15

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification