AT339377B - Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistoren - Google Patents
Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistorenInfo
- Publication number
- AT339377B AT339377B AT217274A AT217274A AT339377B AT 339377 B AT339377 B AT 339377B AT 217274 A AT217274 A AT 217274A AT 217274 A AT217274 A AT 217274A AT 339377 B AT339377 B AT 339377B
- Authority
- AT
- Austria
- Prior art keywords
- field effect
- integrated circuits
- effect transistors
- channel field
- producing integrated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H10P32/141—
-
- H10P32/171—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2316095A DE2316095A1 (de) | 1973-03-30 | 1973-03-30 | Verfahren zur herstellung integrierter schaltungen mit komplementaer-kanal-feldeffekttransistoren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA217274A ATA217274A (de) | 1977-02-15 |
| AT339377B true AT339377B (de) | 1977-10-10 |
Family
ID=5876571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT217274A AT339377B (de) | 1973-03-30 | 1974-03-15 | Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistoren |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3919765A (de) |
| JP (1) | JPS49131085A (de) |
| AT (1) | AT339377B (de) |
| BE (1) | BE813051A (de) |
| CA (1) | CA1005175A (de) |
| CH (1) | CH570042A5 (de) |
| DE (1) | DE2316095A1 (de) |
| FR (1) | FR2223838B1 (de) |
| GB (1) | GB1443480A (de) |
| IT (1) | IT1011152B (de) |
| LU (1) | LU69729A1 (de) |
| NL (1) | NL7404337A (de) |
| SE (1) | SE386542B (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2450408A1 (de) * | 1974-10-23 | 1976-04-29 | Siemens Ag | Schaltungsanordnung in einer komplementaer-chl-technik |
| US4043025A (en) * | 1975-05-08 | 1977-08-23 | National Semiconductor Corporation | Self-aligned CMOS process for bulk silicon and insulating substrate device |
| AT380974B (de) * | 1982-04-06 | 1986-08-11 | Shell Austria | Verfahren zum gettern von halbleiterbauelementen |
| JP3562588B2 (ja) | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
| JP3193803B2 (ja) * | 1993-03-12 | 2001-07-30 | 株式会社半導体エネルギー研究所 | 半導体素子の作製方法 |
| KR100226730B1 (ko) * | 1997-04-24 | 1999-10-15 | 구본준 | 씨모스펫 및 그 제조방법 |
| US6068685A (en) * | 1997-10-15 | 2000-05-30 | Saes Pure Gas, Inc. | Semiconductor manufacturing system with getter safety device |
| ES2171044T3 (es) | 1997-10-15 | 2002-08-16 | Saes Pure Gas Inc | Sistema de purificacion de gas dotado de un dispositivo de seguridad y procedimiento de purificacion de gas. |
| US6236089B1 (en) | 1998-01-07 | 2001-05-22 | Lg Semicon Co., Ltd. | CMOSFET and method for fabricating the same |
| US8481372B2 (en) * | 2008-12-11 | 2013-07-09 | Micron Technology, Inc. | JFET device structures and methods for fabricating the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3673679A (en) * | 1970-12-01 | 1972-07-04 | Texas Instruments Inc | Complementary insulated gate field effect devices |
| US3783052A (en) * | 1972-11-10 | 1974-01-01 | Motorola Inc | Process for manufacturing integrated circuits on an alumina substrate |
| US3837071A (en) * | 1973-01-16 | 1974-09-24 | Rca Corp | Method of simultaneously making a sigfet and a mosfet |
-
1973
- 1973-03-30 DE DE2316095A patent/DE2316095A1/de active Pending
-
1974
- 1974-03-15 AT AT217274A patent/AT339377B/de active
- 1974-03-21 FR FR7409676A patent/FR2223838B1/fr not_active Expired
- 1974-03-22 CH CH402674A patent/CH570042A5/xx not_active IP Right Cessation
- 1974-03-26 IT IT49644/74A patent/IT1011152B/it active
- 1974-03-27 GB GB1364974A patent/GB1443480A/en not_active Expired
- 1974-03-28 SE SE7404192A patent/SE386542B/xx unknown
- 1974-03-28 US US455590A patent/US3919765A/en not_active Expired - Lifetime
- 1974-03-28 LU LU69729A patent/LU69729A1/xx unknown
- 1974-03-29 BE BE142638A patent/BE813051A/xx unknown
- 1974-03-29 NL NL7404337A patent/NL7404337A/xx unknown
- 1974-03-29 JP JP49035479A patent/JPS49131085A/ja active Pending
- 1974-03-29 CA CA196,349A patent/CA1005175A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS49131085A (de) | 1974-12-16 |
| CH570042A5 (de) | 1975-11-28 |
| FR2223838B1 (de) | 1978-11-10 |
| ATA217274A (de) | 1977-02-15 |
| IT1011152B (it) | 1977-01-20 |
| DE2316095A1 (de) | 1974-10-10 |
| BE813051A (fr) | 1974-07-15 |
| US3919765A (en) | 1975-11-18 |
| SE386542B (sv) | 1976-08-09 |
| FR2223838A1 (de) | 1974-10-25 |
| CA1005175A (en) | 1977-02-08 |
| NL7404337A (de) | 1974-10-02 |
| GB1443480A (en) | 1976-07-21 |
| LU69729A1 (de) | 1974-07-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2527969A1 (de) | Verfahren zur herstellung oxid- isolierter feldeffekt-transistoren | |
| AT329016B (de) | Verfahren zur herstellung neuer di-enamine | |
| JPS5533096A (en) | Method of manufacturing integrated circuit having complementary field effect transistor | |
| AT336882B (de) | Verfahren zur herstellung von rohren | |
| AT339377B (de) | Verfahren zur herstellung integrierter schaltungen mit komplementar-kanal-feldeffekttransistoren | |
| CH544410A (de) | Halbleiteranordnung und Verfahren zur Herstellung dieser Halbleiteranordnung | |
| DE2520047A1 (de) | Verfahren zur herstellung von silizium-gate-feldeffekttransistoren | |
| AT328018B (de) | Verfahren zur herstellung von mikroelektronischen schaltungen | |
| CH506890A (de) | Verfahren zur Herstellung integrierter Schaltungen | |
| ATA1017674A (de) | Verfahren zur herstellung von gedruckten schaltungen | |
| CH452062A (de) | Verfahren zur Herstellung von integrierten Schaltungen | |
| AT339376B (de) | Verfahren zur herstellung von integrierten schaltungen mit feldeffekttransistoren mit isolierter torelektrode unterschiedlichen leitungszustandes | |
| AT339378B (de) | Verfahren zur herstellung von feldeffekttransistoren durch anwendung einer selektiven getterung | |
| ATA310574A (de) | Verfahren zur herstellung neuer bicycloalkenone | |
| CH507542A (de) | Verfahren zur Herstellung von Zifferblättern | |
| AT358520B (de) | Verfahren zur herstellung von briketts | |
| CH558085A (de) | Verfahren zur herstellung integrierter schaltungen. | |
| AT336268B (de) | Formmassen und verfahren zur herstellung derselben | |
| DD134321A3 (de) | Verfahren zur herstellung von planartransistoren und integrierten schaltkreisen | |
| DD127777A1 (de) | Verfahren zur herstellung von feldeffekttransistoren und integrierten schaltungen | |
| ATA784974A (de) | Verfahren zur herstellung von formkorper | |
| AT339038B (de) | Verfahren zur latexherstellung | |
| AT362746B (de) | Verfahren zur herstellung weicher hexagonaler bornitridkristalle | |
| AT324583B (de) | Verfahren zur herstellung neuer diacylapomorphine | |
| AT336103B (de) | Verfahren zur herstellung des magnetkreises eines elektroakustischen wandlers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |