LU69729A1 - - Google Patents

Info

Publication number
LU69729A1
LU69729A1 LU69729A LU69729A LU69729A1 LU 69729 A1 LU69729 A1 LU 69729A1 LU 69729 A LU69729 A LU 69729A LU 69729 A LU69729 A LU 69729A LU 69729 A1 LU69729 A1 LU 69729A1
Authority
LU
Luxembourg
Application number
LU69729A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of LU69729A1 publication Critical patent/LU69729A1/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/03Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10P32/141
    • H10P32/171
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/06Gettering
LU69729A 1973-03-30 1974-03-28 LU69729A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316095A DE2316095A1 (de) 1973-03-30 1973-03-30 Verfahren zur herstellung integrierter schaltungen mit komplementaer-kanal-feldeffekttransistoren

Publications (1)

Publication Number Publication Date
LU69729A1 true LU69729A1 (de) 1974-07-17

Family

ID=5876571

Family Applications (1)

Application Number Title Priority Date Filing Date
LU69729A LU69729A1 (de) 1973-03-30 1974-03-28

Country Status (13)

Country Link
US (1) US3919765A (de)
JP (1) JPS49131085A (de)
AT (1) AT339377B (de)
BE (1) BE813051A (de)
CA (1) CA1005175A (de)
CH (1) CH570042A5 (de)
DE (1) DE2316095A1 (de)
FR (1) FR2223838B1 (de)
GB (1) GB1443480A (de)
IT (1) IT1011152B (de)
LU (1) LU69729A1 (de)
NL (1) NL7404337A (de)
SE (1) SE386542B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450408A1 (de) * 1974-10-23 1976-04-29 Siemens Ag Schaltungsanordnung in einer komplementaer-chl-technik
US4043025A (en) * 1975-05-08 1977-08-23 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JP3562588B2 (ja) 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
KR100226730B1 (ko) * 1997-04-24 1999-10-15 구본준 씨모스펫 및 그 제조방법
US6068685A (en) * 1997-10-15 2000-05-30 Saes Pure Gas, Inc. Semiconductor manufacturing system with getter safety device
ES2171044T3 (es) 1997-10-15 2002-08-16 Saes Pure Gas Inc Sistema de purificacion de gas dotado de un dispositivo de seguridad y procedimiento de purificacion de gas.
US6236089B1 (en) 1998-01-07 2001-05-22 Lg Semicon Co., Ltd. CMOSFET and method for fabricating the same
US8481372B2 (en) * 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet

Also Published As

Publication number Publication date
JPS49131085A (de) 1974-12-16
CH570042A5 (de) 1975-11-28
FR2223838B1 (de) 1978-11-10
ATA217274A (de) 1977-02-15
IT1011152B (it) 1977-01-20
DE2316095A1 (de) 1974-10-10
BE813051A (fr) 1974-07-15
US3919765A (en) 1975-11-18
SE386542B (sv) 1976-08-09
FR2223838A1 (de) 1974-10-25
CA1005175A (en) 1977-02-08
NL7404337A (de) 1974-10-02
GB1443480A (en) 1976-07-21
AT339377B (de) 1977-10-10

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