AT313981B - Verfahren zur Herstellung eines Silizium-Hochfrequenz-Planartransistors - Google Patents
Verfahren zur Herstellung eines Silizium-Hochfrequenz-PlanartransistorsInfo
- Publication number
- AT313981B AT313981B AT242770A AT242770A AT313981B AT 313981 B AT313981 B AT 313981B AT 242770 A AT242770 A AT 242770A AT 242770 A AT242770 A AT 242770A AT 313981 B AT313981 B AT 313981B
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- high frequency
- planar transistor
- silicon high
- frequency planar
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
- H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
- H02G3/02—Details
- H02G3/08—Distribution boxes; Connection or junction boxes
- H02G3/12—Distribution boxes; Connection or junction boxes for flush mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Architecture (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691913681 DE1913681A1 (de) | 1969-03-18 | 1969-03-18 | Silicium-Hochfrequenz-Planartransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT313981B true AT313981B (de) | 1974-03-11 |
Family
ID=5728502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT242770A AT313981B (de) | 1969-03-18 | 1970-03-16 | Verfahren zur Herstellung eines Silizium-Hochfrequenz-Planartransistors |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT313981B (de) |
| CH (1) | CH503377A (de) |
| DE (1) | DE1913681A1 (de) |
| FR (1) | FR2035028B1 (de) |
| GB (1) | GB1262396A (de) |
| NL (1) | NL6916374A (de) |
| SE (1) | SE348318B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2429957A1 (de) * | 1974-06-21 | 1976-01-08 | Siemens Ag | Verfahren zur herstellung einer dotierten zone eines leitfaehigkeitstyps in einem halbleiterkoerper |
-
1969
- 1969-03-18 DE DE19691913681 patent/DE1913681A1/de active Pending
- 1969-10-30 NL NL6916374A patent/NL6916374A/xx unknown
-
1970
- 1970-03-13 FR FR7009076A patent/FR2035028B1/fr not_active Expired
- 1970-03-16 AT AT242770A patent/AT313981B/de not_active IP Right Cessation
- 1970-03-17 CH CH393370A patent/CH503377A/de not_active IP Right Cessation
- 1970-03-17 GB GB1265770A patent/GB1262396A/en not_active Expired
- 1970-03-18 SE SE367670A patent/SE348318B/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2429957A1 (de) * | 1974-06-21 | 1976-01-08 | Siemens Ag | Verfahren zur herstellung einer dotierten zone eines leitfaehigkeitstyps in einem halbleiterkoerper |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2035028B1 (de) | 1974-09-20 |
| NL6916374A (de) | 1970-09-22 |
| SE348318B (de) | 1972-08-28 |
| DE1913681A1 (de) | 1970-10-01 |
| FR2035028A1 (de) | 1970-12-18 |
| CH503377A (de) | 1971-02-15 |
| GB1262396A (en) | 1972-02-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |