AT307501B - Verfahren zur Herstellung einer integrierten Halbleitervorrichtung - Google Patents
Verfahren zur Herstellung einer integrierten HalbleitervorrichtungInfo
- Publication number
- AT307501B AT307501B AT111768A AT111768A AT307501B AT 307501 B AT307501 B AT 307501B AT 111768 A AT111768 A AT 111768A AT 111768 A AT111768 A AT 111768A AT 307501 B AT307501 B AT 307501B
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- semiconductor device
- integrated semiconductor
- integrated
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR93983A FR1520514A (fr) | 1967-02-07 | 1967-02-07 | Procédé de fabrication de circuits intégrés comportant des transistors de types opposés |
Publications (1)
Publication Number | Publication Date |
---|---|
AT307501B true AT307501B (de) | 1973-05-25 |
Family
ID=8624921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT111768A AT307501B (de) | 1967-02-07 | 1968-02-06 | Verfahren zur Herstellung einer integrierten Halbleitervorrichtung |
Country Status (9)
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL162511C (nl) * | 1969-01-11 | 1980-05-16 | Philips Nv | Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling. |
JPS509635B1 (US07494231-20090224-C00006.png) * | 1970-09-07 | 1975-04-14 |
-
1967
- 1967-02-07 FR FR93983A patent/FR1520514A/fr not_active Expired
-
1968
- 1968-02-03 NL NL6801583.A patent/NL161618C/xx not_active IP Right Cessation
- 1968-02-05 BE BE710353D patent/BE710353A/xx unknown
- 1968-02-05 SE SE01482/68A patent/SE325962B/xx unknown
- 1968-02-05 GB GB5652/68A patent/GB1210981A/en not_active Expired
- 1968-02-05 CH CH165768A patent/CH483126A/de not_active IP Right Cessation
- 1968-02-05 US US703024A patent/US3576682A/en not_active Expired - Lifetime
- 1968-02-06 DE DE1639355A patent/DE1639355C3/de not_active Expired
- 1968-02-06 AT AT111768A patent/AT307501B/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
SE325962B (US07494231-20090224-C00006.png) | 1970-07-13 |
US3576682A (en) | 1971-04-27 |
DE1639355A1 (de) | 1971-04-01 |
GB1210981A (en) | 1970-11-04 |
FR1520514A (fr) | 1968-04-12 |
DE1639355C3 (de) | 1979-01-04 |
CH483126A (de) | 1969-12-15 |
BE710353A (US07494231-20090224-C00006.png) | 1968-08-05 |
NL161618C (nl) | 1980-02-15 |
DE1639355B2 (de) | 1978-05-03 |
NL6801583A (US07494231-20090224-C00006.png) | 1968-08-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |