AT303118B - Verfahren zum Herstellen mindestens eines pn-Übergangs in einem aus Germanium bestehenden Halbleiterbauelement durch Diffusion
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Verfahren zum Herstellen mindestens eines pn-Übergangs in einem aus Germanium bestehenden Halbleiterbauelement durch Diffusion
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Publication number
AT303118B
AT303118BAT730169AAT730169AAT303118BAT 303118 BAT303118 BAT 303118BAT 730169 AAT730169 AAT 730169AAT 730169 AAT730169 AAT 730169AAT 303118 BAT303118 BAT 303118B
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Publication of AT303118BpublicationCriticalpatent/AT303118B/de
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
H10W74/00—Encapsulations, e.g. protective coatings
H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
AT730169A1968-07-311969-07-29Verfahren zum Herstellen mindestens eines pn-Übergangs in einem aus Germanium bestehenden Halbleiterbauelement durch Diffusion
AT303118B
(de)