AT287790B - Mehrere elektrische funktionsstufen enthaltende integrierte schaltung - Google Patents

Mehrere elektrische funktionsstufen enthaltende integrierte schaltung

Info

Publication number
AT287790B
AT287790B AT10745/68A AT1074568A AT287790B AT 287790 B AT287790 B AT 287790B AT 10745/68 A AT10745/68 A AT 10745/68A AT 1074568 A AT1074568 A AT 1074568A AT 287790 B AT287790 B AT 287790B
Authority
AT
Austria
Prior art keywords
integrated circuit
circuit containing
containing several
several electrical
electrical functional
Prior art date
Application number
AT10745/68A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT287790B publication Critical patent/AT287790B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/164—Three dimensional processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
AT10745/68A 1967-11-15 1968-11-05 Mehrere elektrische funktionsstufen enthaltende integrierte schaltung AT287790B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED0054607 1967-11-15

Publications (1)

Publication Number Publication Date
AT287790B true AT287790B (de) 1971-02-10

Family

ID=7055889

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10745/68A AT287790B (de) 1967-11-15 1968-11-05 Mehrere elektrische funktionsstufen enthaltende integrierte schaltung

Country Status (8)

Country Link
US (1) US3564358A (de)
AT (1) AT287790B (de)
CH (1) CH474864A (de)
DE (1) DE1589705A1 (de)
FR (1) FR1601332A (de)
GB (1) GB1200534A (de)
NL (1) NL6815878A (de)
SE (1) SE338807B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046954A (en) * 1973-12-19 1977-09-06 Rockwell International Corporation Monocrystalline silicates
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
JPS5272399A (en) * 1975-12-13 1977-06-16 Fujitsu Ltd Method and apparatus for growth of single crystals of al2o3 from gas p hase
US4180618A (en) * 1977-07-27 1979-12-25 Corning Glass Works Thin silicon film electronic device
DE2832012A1 (de) * 1978-07-20 1980-01-31 Siemens Ag Verfahren zum herstellen einer dreidimensionalen integrierten schaltung
JPS5534489A (en) * 1978-09-01 1980-03-11 Pioneer Electronic Corp Manufacture of semiconductor device
DE2902002A1 (de) * 1979-01-19 1980-07-31 Gerhard Krause Dreidimensional integrierte elektronische schaltungen
EP0020135A1 (de) * 1979-05-29 1980-12-10 Massachusetts Institute Of Technology Dreidimensionale Integration durch graphische Epitaxie
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
JPS57211267A (en) * 1981-06-22 1982-12-25 Toshiba Corp Semiconductor device and manufacture thereof
JPS5837949A (ja) * 1981-08-31 1983-03-05 Toshiba Corp 集積回路装置
JPS5853822A (ja) * 1981-09-25 1983-03-30 Toshiba Corp 積層半導体装置
JPS5890769A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 積層半導体装置
JPH0636423B2 (ja) * 1982-06-22 1994-05-11 株式会社日立製作所 三次元構造半導体装置
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
US4720738A (en) * 1982-09-08 1988-01-19 Texas Instruments Incorporated Focal plane array structure including a signal processing system
US4612072A (en) * 1983-06-24 1986-09-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
US4692994A (en) * 1986-04-29 1987-09-15 Hitachi, Ltd. Process for manufacturing semiconductor devices containing microbridges
US4829018A (en) * 1986-06-27 1989-05-09 Wahlstrom Sven E Multilevel integrated circuits employing fused oxide layers
US4766516A (en) * 1987-09-24 1988-08-23 Hughes Aircraft Company Method and apparatus for securing integrated circuits from unauthorized copying and use
FR2629637B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
DE3828812A1 (de) * 1988-08-25 1990-03-08 Fraunhofer Ges Forschung Dreidimensionale integrierte schaltung und verfahren zu deren herstellung
US5163005A (en) * 1990-12-19 1992-11-10 The United States Of America As Represented By The Secretary Of The Air Force Method of cloning printed wiring boards
US5202754A (en) * 1991-09-13 1993-04-13 International Business Machines Corporation Three-dimensional multichip packages and methods of fabrication
US5670824A (en) * 1994-12-22 1997-09-23 Pacsetter, Inc. Vertically integrated component assembly incorporating active and passive components
US7033891B2 (en) * 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US10388568B2 (en) * 2011-06-28 2019-08-20 Monolithic 3D Inc. 3D semiconductor device and system

Also Published As

Publication number Publication date
FR1601332A (de) 1970-08-17
DE1589705A1 (de) 1970-04-30
SE338807B (de) 1971-09-20
GB1200534A (en) 1970-07-29
CH474864A (de) 1969-06-30
NL6815878A (de) 1969-05-19
US3564358A (en) 1971-02-16

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