JPS5534489A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5534489A JPS5534489A JP10787378A JP10787378A JPS5534489A JP S5534489 A JPS5534489 A JP S5534489A JP 10787378 A JP10787378 A JP 10787378A JP 10787378 A JP10787378 A JP 10787378A JP S5534489 A JPS5534489 A JP S5534489A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- jfet
- semiconductor layers
- semiconductor layer
- low density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To facilitate the forming with ease a number of JFET for high voltage power thru the method wherein the process of forming semiconductor layers of high density on substrate, the process of forming semiconductor layers of low density on the foregoing layers and the process of introducing impurities of inverse conduction electrode selectively are repeated.
CONSTITUTION: N-type semiconductor layer 2 of high density to become drain of JFET is epitaxial grown on n-type semiconductor substrate 1, upon which n-type semiconductor layer 3 of low density to become channel is also epitaxial grown. Within the semiconductor layer 3, high density p-type impurity gates 4 of specific stripe form are selectively formed. On those gates, low density n-type semiconductor layers 5 are grown and are made as drain. The above procedures are repeated which construct JFET for high voltage power three dimentionally. In the procedures, semiconductor layers 5 may be left out.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10787378A JPS5534489A (en) | 1978-09-01 | 1978-09-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10787378A JPS5534489A (en) | 1978-09-01 | 1978-09-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5534489A true JPS5534489A (en) | 1980-03-11 |
Family
ID=14470244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10787378A Pending JPS5534489A (en) | 1978-09-01 | 1978-09-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5534489A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60234376A (en) * | 1984-05-07 | 1985-11-21 | Fujitsu Ltd | Junction type field effect transistor and manufacture thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3564358A (en) * | 1967-11-15 | 1971-02-16 | Siemens Ag | Integrated circuit structure containing multiple sandwich layers of monocrystalline semiconductor and insulator material |
| JPS5082977A (en) * | 1973-11-20 | 1975-07-04 |
-
1978
- 1978-09-01 JP JP10787378A patent/JPS5534489A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3564358A (en) * | 1967-11-15 | 1971-02-16 | Siemens Ag | Integrated circuit structure containing multiple sandwich layers of monocrystalline semiconductor and insulator material |
| JPS5082977A (en) * | 1973-11-20 | 1975-07-04 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60234376A (en) * | 1984-05-07 | 1985-11-21 | Fujitsu Ltd | Junction type field effect transistor and manufacture thereof |
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