CH491501A - Integrierte Halbleiterschaltung - Google Patents

Integrierte Halbleiterschaltung

Info

Publication number
CH491501A
CH491501A CH1183968A CH1183968A CH491501A CH 491501 A CH491501 A CH 491501A CH 1183968 A CH1183968 A CH 1183968A CH 1183968 A CH1183968 A CH 1183968A CH 491501 A CH491501 A CH 491501A
Authority
CH
Switzerland
Prior art keywords
semiconductor circuit
integrated semiconductor
integrated
circuit
semiconductor
Prior art date
Application number
CH1183968A
Other languages
English (en)
Inventor
Charles Denton Tony
David Bergman Gerald
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH491501A publication Critical patent/CH491501A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
  • Control Of Direct Current Motors (AREA)
CH1183968A 1967-08-09 1968-08-07 Integrierte Halbleiterschaltung CH491501A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB36515/67A GB1193465A (en) 1967-08-09 1967-08-09 Improvements in Semiconductor Integrated Circuits
GB36514/67A GB1194427A (en) 1967-08-09 1967-08-09 Improvements in Semiconductor Integrated Circuits

Publications (1)

Publication Number Publication Date
CH491501A true CH491501A (de) 1970-05-31

Family

ID=26263142

Family Applications (2)

Application Number Title Priority Date Filing Date
CH1183968A CH491501A (de) 1967-08-09 1968-08-07 Integrierte Halbleiterschaltung
CH1184068A CH489915A (de) 1967-08-09 1968-08-07 Integrierte Halbleiterschaltung

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH1184068A CH489915A (de) 1967-08-09 1968-08-07 Integrierte Halbleiterschaltung

Country Status (7)

Country Link
US (2) US3586928A (de)
BE (2) BE719238A (de)
CH (2) CH491501A (de)
DE (1) DE1764794A1 (de)
FR (2) FR1584128A (de)
GB (2) GB1193465A (de)
NL (2) NL6811176A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021346B1 (de) * 1970-08-14 1975-07-22
JPS4974486A (de) * 1972-11-17 1974-07-18
US3959812A (en) * 1973-02-26 1976-05-25 Hitachi, Ltd. High-voltage semiconductor integrated circuit
US4001866A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Monolithic, junction isolated photrac
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
JPS54112157A (en) * 1978-02-23 1979-09-01 Hitachi Ltd Control circuit for field effect thyristor
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
FR2574594B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
JPS63182861A (ja) * 1987-01-26 1988-07-28 Toshiba Corp ゼロクロス型サイリスタ
DE10111462A1 (de) * 2001-03-09 2002-09-19 Infineon Technologies Ag Thyristorstruktur und Überspannungsschutzanordnung mit einer solchen Thyristorstruktur
CN108878522A (zh) * 2018-07-03 2018-11-23 西安卫光科技有限公司 一种高触发电压可控硅

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3299307A (en) * 1963-01-14 1967-01-17 Inoue Kiyoshi Electroluminescent multilayer stack with in situ formation of active layer and method of making same
US3419765A (en) * 1965-10-01 1968-12-31 Texas Instruments Inc Ohmic contact to semiconductor devices
US3423650A (en) * 1966-07-01 1969-01-21 Rca Corp Monolithic semiconductor microcircuits with improved means for connecting points of common potential

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement

Also Published As

Publication number Publication date
US3508127A (en) 1970-04-21
BE719238A (de) 1969-02-10
DE1764794A1 (de) 1971-11-11
CH489915A (de) 1970-04-30
NL6811253A (de) 1969-02-11
GB1194427A (en) 1970-06-10
US3586928A (en) 1971-06-22
FR1584128A (de) 1969-12-12
FR1578386A (de) 1969-08-14
GB1193465A (en) 1970-06-03
NL6811176A (de) 1969-02-11
BE719310A (de) 1969-02-10

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Legal Events

Date Code Title Description
PL Patent ceased