AT266264B - Spannungsabhängiger Halbmetallschichtwiderstand mit negativer Stromspannungscharakteristik - Google Patents
Spannungsabhängiger Halbmetallschichtwiderstand mit negativer StromspannungscharakteristikInfo
- Publication number
- AT266264B AT266264B AT975566A AT975566A AT266264B AT 266264 B AT266264 B AT 266264B AT 975566 A AT975566 A AT 975566A AT 975566 A AT975566 A AT 975566A AT 266264 B AT266264 B AT 266264B
- Authority
- AT
- Austria
- Prior art keywords
- dependent
- voltage
- film resistor
- semimetal film
- negative voltage
- Prior art date
Links
- 230000001419 dependent effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965D0048616 DE1261252C2 (de) | 1965-11-10 | 1965-11-10 | Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT266264B true AT266264B (de) | 1968-11-11 |
Family
ID=7051308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT975566A AT266264B (de) | 1965-11-10 | 1966-10-19 | Spannungsabhängiger Halbmetallschichtwiderstand mit negativer Stromspannungscharakteristik |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT266264B (OSRAM) |
| BE (1) | BE688955A (OSRAM) |
| CH (1) | CH454297A (OSRAM) |
| DE (1) | DE1261252C2 (OSRAM) |
| FR (1) | FR1498954A (OSRAM) |
| GB (1) | GB1147355A (OSRAM) |
| NL (1) | NL6615217A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5410291A (en) * | 1992-09-01 | 1995-04-25 | Nippondenso Co., Ltd. | Thermistor type temperature sensor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005001253A1 (de) * | 2005-01-11 | 2006-07-20 | Infineon Technologies Ag | Speicherzellenanordnung, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung |
| US7515454B2 (en) * | 2006-08-02 | 2009-04-07 | Infineon Technologies Ag | CBRAM cell and CBRAM array, and method of operating thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2816228A (en) * | 1953-05-21 | 1957-12-10 | Rca Corp | Semiconductor phase shift oscillator and device |
| US2968014A (en) * | 1959-04-01 | 1961-01-10 | Kentucky Res Foundation | Synthetic stibnite crystal and method for producing the same |
| BE622534A (OSRAM) * | 1961-09-19 |
-
1965
- 1965-11-10 DE DE1965D0048616 patent/DE1261252C2/de not_active Expired
-
1966
- 1966-10-19 AT AT975566A patent/AT266264B/de active
- 1966-10-21 CH CH1541566A patent/CH454297A/de unknown
- 1966-10-27 NL NL6615217A patent/NL6615217A/xx unknown
- 1966-10-27 BE BE688955D patent/BE688955A/xx unknown
- 1966-10-27 GB GB48188/66A patent/GB1147355A/en not_active Expired
- 1966-11-09 FR FR83092A patent/FR1498954A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5410291A (en) * | 1992-09-01 | 1995-04-25 | Nippondenso Co., Ltd. | Thermistor type temperature sensor |
| US5610571A (en) * | 1992-09-01 | 1997-03-11 | Nippondenso Co., Ltd. | Thermistor type temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1261252B (de) | 1968-02-15 |
| NL6615217A (OSRAM) | 1967-05-11 |
| GB1147355A (en) | 1969-04-02 |
| BE688955A (OSRAM) | 1967-03-31 |
| CH454297A (de) | 1968-04-15 |
| FR1498954A (fr) | 1967-10-20 |
| DE1261252C2 (de) | 1974-01-03 |
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