AT255569B - Mehrschichthalbleiter, insbesondere Thyristor für Hochspannung und große Durchgangsleistungen - Google Patents
Mehrschichthalbleiter, insbesondere Thyristor für Hochspannung und große DurchgangsleistungenInfo
- Publication number
- AT255569B AT255569B AT123263A AT123263A AT255569B AT 255569 B AT255569 B AT 255569B AT 123263 A AT123263 A AT 123263A AT 123263 A AT123263 A AT 123263A AT 255569 B AT255569 B AT 255569B
- Authority
- AT
- Austria
- Prior art keywords
- high voltage
- layer semiconductors
- large throughputs
- thyristors
- especially thyristors
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH202162A CH414866A (de) | 1962-02-20 | 1962-02-20 | Aus p- und n-Schichten aufgebautes Gleichrichterelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT255569B true AT255569B (de) | 1967-07-10 |
Family
ID=4224045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT123263A AT255569B (de) | 1962-02-20 | 1963-02-18 | Mehrschichthalbleiter, insbesondere Thyristor für Hochspannung und große Durchgangsleistungen |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT255569B (instruction) |
| BE (1) | BE628619A (instruction) |
| CH (1) | CH414866A (instruction) |
| DE (2) | DE1439215B2 (instruction) |
| FR (1) | FR1360744A (instruction) |
| GB (1) | GB1031043A (instruction) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6603372A (instruction) * | 1965-03-25 | 1966-09-26 | ||
| DE1589529C3 (de) * | 1967-06-19 | 1982-10-14 | Robert Bosch Gmbh, 7000 Stuttgart | Planartransistor |
| US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
| DE2340107A1 (de) * | 1973-07-06 | 1975-01-23 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement |
| CH566643A5 (instruction) * | 1973-10-11 | 1975-09-15 | Bbc Brown Boveri & Cie | |
| DE2358937C3 (de) * | 1973-11-27 | 1976-07-15 | Licentia Gmbh | Thyristor fuer hochspannung im kilovoltbereich |
| DE102021116206B3 (de) * | 2021-06-23 | 2022-09-29 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL224173A (instruction) * | 1957-01-18 |
-
0
- BE BE628619D patent/BE628619A/xx unknown
-
1962
- 1962-02-20 CH CH202162A patent/CH414866A/de unknown
-
1963
- 1963-02-18 DE DE1439215A patent/DE1439215B2/de active Granted
- 1963-02-18 DE DE19631789155 patent/DE1789155B1/de not_active Ceased
- 1963-02-18 AT AT123263A patent/AT255569B/de active
- 1963-02-20 GB GB6852/63A patent/GB1031043A/en not_active Expired
- 1963-02-20 FR FR925466A patent/FR1360744A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1031043A (en) | 1966-05-25 |
| CH414866A (de) | 1966-06-15 |
| FR1360744A (fr) | 1964-05-15 |
| DE1439215B2 (de) | 1973-10-18 |
| BE628619A (instruction) | |
| DE1439215A1 (de) | 1968-10-17 |
| DE1789155B1 (de) | 1976-03-11 |
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