AT255569B - Multi-layer semiconductors, especially thyristors for high voltage and large throughputs - Google Patents
Multi-layer semiconductors, especially thyristors for high voltage and large throughputsInfo
- Publication number
- AT255569B AT255569B AT123263A AT123263A AT255569B AT 255569 B AT255569 B AT 255569B AT 123263 A AT123263 A AT 123263A AT 123263 A AT123263 A AT 123263A AT 255569 B AT255569 B AT 255569B
- Authority
- AT
- Austria
- Prior art keywords
- high voltage
- layer semiconductors
- large throughputs
- thyristors
- especially thyristors
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH202162A CH414866A (en) | 1962-02-20 | 1962-02-20 | Rectifier element made up of p- and n-layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT255569B true AT255569B (en) | 1967-07-10 |
Family
ID=4224045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT123263A AT255569B (en) | 1962-02-20 | 1963-02-18 | Multi-layer semiconductors, especially thyristors for high voltage and large throughputs |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT255569B (en) |
| BE (1) | BE628619A (en) |
| CH (1) | CH414866A (en) |
| DE (2) | DE1789155B1 (en) |
| FR (1) | FR1360744A (en) |
| GB (1) | GB1031043A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6603372A (en) * | 1965-03-25 | 1966-09-26 | ||
| DE1589529C3 (en) * | 1967-06-19 | 1982-10-14 | Robert Bosch Gmbh, 7000 Stuttgart | Planar transistor |
| US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
| DE7328984U (en) * | 1973-07-06 | 1975-05-15 | Bbc Ag Brown Boveri & Cie | POWER SEMICONDUCTOR COMPONENT |
| CH566643A5 (en) * | 1973-10-11 | 1975-09-15 | Bbc Brown Boveri & Cie | |
| DE2358937C3 (en) * | 1973-11-27 | 1976-07-15 | Licentia Gmbh | THYRISTOR FOR HIGH VOLTAGE IN THE KILOVOLT RANGE |
| DE102021116206B3 (en) * | 2021-06-23 | 2022-09-29 | Infineon Technologies Bipolar Gmbh & Co. Kg | Process and device for producing an edge structure of a semiconductor component |
-
0
- BE BE628619D patent/BE628619A/xx unknown
-
1962
- 1962-02-20 CH CH202162A patent/CH414866A/en unknown
-
1963
- 1963-02-18 DE DE19631789155 patent/DE1789155B1/en not_active Ceased
- 1963-02-18 DE DE1963S0083800 patent/DE1439215B2/en active Granted
- 1963-02-18 AT AT123263A patent/AT255569B/en active
- 1963-02-20 FR FR925466A patent/FR1360744A/en not_active Expired
- 1963-02-20 GB GB685263A patent/GB1031043A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1031043A (en) | 1966-05-25 |
| CH414866A (en) | 1966-06-15 |
| BE628619A (en) | |
| DE1439215B2 (en) | 1973-10-18 |
| DE1439215A1 (en) | 1968-10-17 |
| DE1789155B1 (en) | 1976-03-11 |
| FR1360744A (en) | 1964-05-15 |
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