AT251670B - Ziehdüse zum gerichteten Ziehen von Halbleiterkristallen aus einer Schmelze - Google Patents

Ziehdüse zum gerichteten Ziehen von Halbleiterkristallen aus einer Schmelze

Info

Publication number
AT251670B
AT251670B AT405065A AT405065A AT251670B AT 251670 B AT251670 B AT 251670B AT 405065 A AT405065 A AT 405065A AT 405065 A AT405065 A AT 405065A AT 251670 B AT251670 B AT 251670B
Authority
AT
Austria
Prior art keywords
melt
directional
semiconductor crystals
nozzle
drawing nozzle
Prior art date
Application number
AT405065A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT251670B publication Critical patent/AT251670B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT405065A 1964-09-22 1965-05-04 Ziehdüse zum gerichteten Ziehen von Halbleiterkristallen aus einer Schmelze AT251670B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES93293A DE1220832B (de) 1964-09-22 1964-09-22 Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze

Publications (1)

Publication Number Publication Date
AT251670B true AT251670B (de) 1967-01-10

Family

ID=7517878

Family Applications (1)

Application Number Title Priority Date Filing Date
AT405065A AT251670B (de) 1964-09-22 1965-05-04 Ziehdüse zum gerichteten Ziehen von Halbleiterkristallen aus einer Schmelze

Country Status (7)

Country Link
US (1) US3393054A (de)
AT (1) AT251670B (de)
BE (1) BE669955A (de)
CH (1) CH424730A (de)
DE (1) DE1220832B (de)
GB (1) GB1103906A (de)
NL (1) NL6506753A (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2138359B2 (de) * 1971-07-31 1973-05-17 Preussag Ag, 3000 Hannover Vorrichtung zum ziehen eines stabes
JPS4868476A (de) * 1971-12-22 1973-09-18
JPS4869774A (de) * 1971-12-22 1973-09-21
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth
JPS5190987A (de) * 1975-02-07 1976-08-10
DE2508369A1 (de) * 1975-02-26 1976-09-02 Siemens Ag Verfahren zum herstellen von scheibenfoermigen siliciumkoerpern, insbesondere fuer solarzellen
JPS604599B2 (ja) * 1976-03-17 1985-02-05 株式会社東芝 タンタル酸リチウム単結晶の製造方法
DE2632614A1 (de) * 1976-07-20 1978-01-26 Siemens Ag Vorrichtung zum ziehen eines einkristallinen koerpers aus einem schmelzfilm
US4090851A (en) * 1976-10-15 1978-05-23 Rca Corporation Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets
JPS56109893A (en) * 1980-01-30 1981-08-31 Kokusai Denshin Denwa Co Ltd <Kdd> Single crystal manufacturing apparatus
US4521272A (en) * 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
US4356152A (en) * 1981-03-13 1982-10-26 Rca Corporation Silicon melting crucible
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
US4597948A (en) * 1982-12-27 1986-07-01 Sri International Apparatus for obtaining silicon from fluosilicic acid
US4442082A (en) * 1982-12-27 1984-04-10 Sri International Process for obtaining silicon from fluosilicic acid
US4605468A (en) * 1984-07-10 1986-08-12 Hughes Aircraft Company Shaped crystal fiber growth method
US4824519A (en) * 1987-10-22 1989-04-25 Massachusetts Institute Of Technology Method and apparatus for single crystal pulling downwardly from the lower surface of a floating melt
DE10220964B4 (de) * 2002-05-06 2006-11-02 Pv Silicon Forschungs- Und Produktions Ag Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation
US9572840B2 (en) 2003-06-27 2017-02-21 DePuy Synthes Products, Inc. Regeneration and repair of neural tissue using postpartum-derived cells
JP5289970B2 (ja) * 2005-12-16 2013-09-11 エシコン・インコーポレイテッド 組織適合性不適合な移植における逆免疫反応を抑制するための組成物および方法
EP2089511B1 (de) * 2006-11-13 2014-09-17 DePuy Synthes Products, LLC In-vitro-expansion von postpartalen zellen mittels mikroträgern

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials

Also Published As

Publication number Publication date
NL6506753A (de) 1966-03-23
BE669955A (de) 1966-01-17
US3393054A (en) 1968-07-16
DE1220832B (de) 1966-07-14
CH424730A (de) 1966-11-30
GB1103906A (en) 1968-02-21

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