FR1445855A - élément redresseur commandé à semiconducteur pour courants forts - Google Patents

élément redresseur commandé à semiconducteur pour courants forts

Info

Publication number
FR1445855A
FR1445855A FR27896A FR27896A FR1445855A FR 1445855 A FR1445855 A FR 1445855A FR 27896 A FR27896 A FR 27896A FR 27896 A FR27896 A FR 27896A FR 1445855 A FR1445855 A FR 1445855A
Authority
FR
France
Prior art keywords
controlled rectifier
high currents
rectifier element
semiconductor controlled
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR27896A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Original Assignee
Siemens Schuckertwerke AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1445855A publication Critical patent/FR1445855A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR27896A 1964-08-12 1965-08-10 élément redresseur commandé à semiconducteur pour courants forts Expired FR1445855A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES92591A DE1283964B (de) 1964-08-12 1964-08-12 Steuerbares gleichrichtendes Halbleiterbauelement mit einem im wesentlichen einkristallinen Siliziumkoerper mit einer pnpn-Zonenfolge

Publications (1)

Publication Number Publication Date
FR1445855A true FR1445855A (fr) 1966-07-15

Family

ID=7517328

Family Applications (1)

Application Number Title Priority Date Filing Date
FR27896A Expired FR1445855A (fr) 1964-08-12 1965-08-10 élément redresseur commandé à semiconducteur pour courants forts

Country Status (11)

Country Link
US (1) US3524115A (fr)
JP (1) JPS525837B1 (fr)
AT (1) AT253060B (fr)
BE (1) BE668064A (fr)
CH (1) CH433511A (fr)
DE (1) DE1283964B (fr)
DK (1) DK114362B (fr)
FR (1) FR1445855A (fr)
GB (1) GB1095576A (fr)
NL (1) NL139844B (fr)
SE (1) SE312609B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2006089A1 (fr) * 1968-04-11 1969-12-19 Westinghouse Electric Corp Dispositif semi-conducteur et procede de fabrication correspondant
FR2204895A1 (fr) * 1972-10-31 1974-05-24 Siemens Ag

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502482A (fr) * 1973-05-08 1975-01-11
JPS59141073U (ja) * 1983-03-11 1984-09-20 渡辺　健司 バタ−押し出し式収納ケ−ス
DE3573357D1 (en) * 1984-12-27 1989-11-02 Siemens Ag Semiconductor power switch

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR77060E (fr) * 1956-09-05 1962-01-12 Int Standard Electric Corp Perfectionnements à la fabrication des éléments de circuits électriques utilisant des corps semi-conducteurs
US2989426A (en) * 1957-06-06 1961-06-20 Ibm Method of transistor manufacture
CH360132A (fr) * 1957-11-29 1962-02-15 Comp Generale Electricite Soupape commandée, à semi-conducteur monocristallin
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
DE1103389B (de) * 1959-10-14 1961-03-30 Siemens Ag Schaltanordnung mit einer Vierschichthalbleiteranordnung
FR1316226A (fr) * 1961-03-10 1963-01-25 Comp Generale Electricite Dispositif semi-conducteur à autoprotection contre une surtension
US3209428A (en) * 1961-07-20 1965-10-05 Westinghouse Electric Corp Process for treating semiconductor devices
AT234844B (de) * 1962-06-19 1964-07-27 Siemens Ag Halbleiter-Bauelement mit einem im wesentlichen einkristallinen Halbleiterkörper und vier Zonen abwechselnden Leitfähigkeitstyps
US3261985A (en) * 1962-12-21 1966-07-19 Gen Electric Cross-current turn-off silicon controlled rectifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2006089A1 (fr) * 1968-04-11 1969-12-19 Westinghouse Electric Corp Dispositif semi-conducteur et procede de fabrication correspondant
FR2204895A1 (fr) * 1972-10-31 1974-05-24 Siemens Ag

Also Published As

Publication number Publication date
DE1283964B (de) 1968-11-28
GB1095576A (fr) 1900-01-01
CH433511A (de) 1967-04-15
BE668064A (fr) 1966-02-09
NL6510391A (fr) 1966-02-14
AT253060B (de) 1967-03-28
DK114362B (da) 1969-06-23
NL139844B (nl) 1973-09-17
SE312609B (fr) 1969-07-21
JPS525837B1 (fr) 1977-02-16
US3524115A (en) 1970-08-11

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