AR027170A1 - Diodos de metal-aislante-metal y metodos de fabricacion - Google Patents
Diodos de metal-aislante-metal y metodos de fabricacionInfo
- Publication number
- AR027170A1 AR027170A1 ARP000101781A AR027170A1 AR 027170 A1 AR027170 A1 AR 027170A1 AR P000101781 A ARP000101781 A AR P000101781A AR 027170 A1 AR027170 A1 AR 027170A1
- Authority
- AR
- Argentina
- Prior art keywords
- metal
- insulating layer
- particles
- insulation
- manufacturing methods
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title abstract 4
- 239000002184 metal Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000002245 particle Substances 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003870 refractory metal Substances 0.000 abstract 2
- 239000011230 binding agent Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000945 filler Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 239000004408 titanium dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
- H01M10/488—Cells or batteries combined with indicating means for external visualization of the condition, e.g. by change of colour or of light density
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/268—Monolayer with structurally defined element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/269—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension including synthetic resin or polymer layer or component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Thermistors And Varistors (AREA)
- Tests Of Electric Status Of Batteries (AREA)
- Formation Of Insulating Films (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Se describen un diodo aislante de metal y un método de fabricacion. El dispositivo incluye una capa conductora y una capa de metal-aislante que comprendepartículas de un metal refractario que tiene un revestimiento de oxido intrínseco que se suspende en un aglomerante dieléctrico. El dispositivo también incluyeuna segunda capa conductora dispuesta para que esté en contacto directo con la capa aislante de metal. Las capas conductoras pueden incluir un metal y unmaterial de relleno dieléctrico. En una forma de realizacion, la capa de metal-aislante consta de partículas de un metal refractario, tal como tantalio. Lacapa de metal-aislante también puede estar formada de partículas de un dieléctrico, tal como dioxido de titanio para aumentar el c ontenido de solidos de lacapa de metal-aislante.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/293,816 US6368705B1 (en) | 1999-04-16 | 1999-04-16 | Metal-insulator-metal diodes and methods of manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
AR027170A1 true AR027170A1 (es) | 2003-03-19 |
Family
ID=23130706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ARP000101781 AR027170A1 (es) | 1999-04-16 | 2000-04-17 | Diodos de metal-aislante-metal y metodos de fabricacion |
Country Status (8)
Country | Link |
---|---|
US (1) | US6368705B1 (es) |
EP (1) | EP1186064A1 (es) |
JP (1) | JP2002542631A (es) |
CN (1) | CN1217428C (es) |
AR (1) | AR027170A1 (es) |
AU (1) | AU4643700A (es) |
HK (1) | HK1043660A1 (es) |
WO (1) | WO2000063981A1 (es) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100657911B1 (ko) * | 2004-11-10 | 2006-12-14 | 삼성전자주식회사 | 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자 |
KR101001394B1 (ko) * | 2008-04-15 | 2010-12-14 | (주) 래트론 | 저정전용량 및 안정적 특성 구현이 가능한 이에스디보호소자 및 제조방법 |
WO2013012978A1 (en) * | 2011-07-19 | 2013-01-24 | Avery Dennison Corporation | Apparatus and methods for testing amount of energy stored in electrochemical cell |
US20140370344A1 (en) * | 2012-01-23 | 2014-12-18 | Avery Dennison Corporation | Electrochemical cell labels and accessories |
US9887271B2 (en) | 2013-07-31 | 2018-02-06 | Empire Technology Development Llc | Metal-insulator-metal diodes and methods of fabrication |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3933487A (en) * | 1971-01-06 | 1976-01-20 | Xerox Corporation | Imaging composition for photoelectrophoretic imaging system |
US4359414A (en) | 1972-12-22 | 1982-11-16 | E. I. Du Pont De Nemours And Company | Insulative composition for forming polymeric electric current regulating junctions |
US4027231A (en) | 1975-09-17 | 1977-05-31 | The United States Of America As Represented By The Secretary Of The Army | Battery charge indicator |
US4380749A (en) | 1980-12-29 | 1983-04-19 | General Electric Company | One-time electrically-activated switch |
IE850536L (en) * | 1985-03-04 | 1986-09-04 | Robillard Jean J A | Displaying information |
JPS63257783A (ja) * | 1987-04-15 | 1988-10-25 | セイコーインスツルメンツ株式会社 | 表示装置の製造方法 |
US5156452A (en) | 1989-07-20 | 1992-10-20 | Paul Drzaic | Encapsulated liquid crystal apparatus having low off-axis haze and operable by a sine-wave power source |
KR930703624A (ko) | 1991-02-11 | 1993-11-30 | 허버트 지. 버카드 | 캡슐화된 액정 물질의 제조방법 |
US5225104A (en) | 1991-03-12 | 1993-07-06 | General Motors Corporation | Polymer dispersed liquid crystal films having improved optical performance |
US5316693A (en) | 1991-04-18 | 1994-05-31 | Idemitsu Kosan Co., Ltd. | Liquid crystal composition and information display apparatus using the liquid crystal composition |
US5340679A (en) * | 1993-03-22 | 1994-08-23 | Xerox Corporation | Intermediate transfer element coatings |
US5460902A (en) | 1993-05-07 | 1995-10-24 | Parker; Robert | Temperature responsive battery tester |
US5389470A (en) | 1993-05-07 | 1995-02-14 | Parker; Robert | Temperature responsive battery tester |
WO1994027336A1 (en) | 1993-05-07 | 1994-11-24 | Brasscorp Limited | Temperature responsive battery tester |
US6156450A (en) | 1997-07-24 | 2000-12-05 | Eveready Battery Company, Inc. | Battery tester having printed electronic components |
-
1999
- 1999-04-16 US US09/293,816 patent/US6368705B1/en not_active Expired - Lifetime
-
2000
- 2000-04-13 CN CN008063281A patent/CN1217428C/zh not_active Expired - Lifetime
- 2000-04-13 EP EP20000928162 patent/EP1186064A1/en not_active Ceased
- 2000-04-13 AU AU46437/00A patent/AU4643700A/en not_active Abandoned
- 2000-04-13 WO PCT/US2000/009873 patent/WO2000063981A1/en active Application Filing
- 2000-04-13 JP JP2000613013A patent/JP2002542631A/ja active Pending
- 2000-04-17 AR ARP000101781 patent/AR027170A1/es unknown
-
2002
- 2002-05-07 HK HK02103490.7A patent/HK1043660A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US6368705B1 (en) | 2002-04-09 |
JP2002542631A (ja) | 2002-12-10 |
AU4643700A (en) | 2000-11-02 |
EP1186064A1 (en) | 2002-03-13 |
CN1350705A (zh) | 2002-05-22 |
CN1217428C (zh) | 2005-08-31 |
WO2000063981A1 (en) | 2000-10-26 |
HK1043660A1 (zh) | 2002-09-20 |
WO2000063981A9 (en) | 2002-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60216241D1 (de) | Rhodium-reiche sauerstoffbarrieren | |
ES2626911T3 (es) | Luna con recubrimiento reflectante de radiación térmica | |
TW200627586A (en) | Barrier structure for semiconductor devices | |
GB2421116B (en) | Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the same | |
TW200505033A (en) | Capacitor and method of fabricating the same | |
ES2159646T3 (es) | Filtro, aparato que contiene el filtro y metodo de utilizacion del aparato. | |
DE602006018643D1 (de) | Elektrisch programmierbare schmelzverbindung | |
TW200709476A (en) | Side view LED with improved arrangement of protection device | |
WO2000041459A3 (de) | Halbleiterbauelement mit einer wolframoxidschicht und verfahren zu dessen herstellung | |
CU23281A3 (es) | Componente de metal conductivo elã0/00ctricamente con superficie tratada de un montaje de pila elã0/00ctrica de ã"xido sã"lido | |
ATE517441T1 (de) | Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten | |
TW200625532A (en) | Semiconductor device having mim element | |
CO2019007673A2 (es) | Cristal que tiene recubrimiento de tco calentable | |
ATE524833T1 (de) | Isolierende sperrschicht | |
TW200607042A (en) | Semiconductor device and method of fabricating the same | |
TW200503157A (en) | Capacitor constructions, methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials | |
ES2172851T3 (es) | Procedimiento para la produccion de una banda compuesta. | |
TW200419762A (en) | Bumpless chip package | |
AR027170A1 (es) | Diodos de metal-aislante-metal y metodos de fabricacion | |
TW200705556A (en) | Wire structure and forming method of the same | |
ES2093822T3 (es) | Dispositivo de silicio electroluminiscente. | |
TW200518327A (en) | Pixel and repairing method thereof | |
DE50311777D1 (de) | Adaptive modulation und andere erweiterungen der physikalischen schicht in mehrfachzugriffsystemen | |
JP2014150256A5 (es) | ||
ATE357743T1 (de) | Elektronisches bauelement und verwendung einer darin enthaltenen schutzstruktur |