ATE524833T1 - Isolierende sperrschicht - Google Patents
Isolierende sperrschichtInfo
- Publication number
- ATE524833T1 ATE524833T1 AT05108290T AT05108290T ATE524833T1 AT E524833 T1 ATE524833 T1 AT E524833T1 AT 05108290 T AT05108290 T AT 05108290T AT 05108290 T AT05108290 T AT 05108290T AT E524833 T1 ATE524833 T1 AT E524833T1
- Authority
- AT
- Austria
- Prior art keywords
- region
- dielectric
- insulating barrier
- barrier layer
- contacting
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title abstract 4
- 239000002800 charge carrier Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28719201P | 2001-04-27 | 2001-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE524833T1 true ATE524833T1 (de) | 2011-09-15 |
Family
ID=23101841
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05108290T ATE524833T1 (de) | 2001-04-27 | 2001-10-19 | Isolierende sperrschicht |
AT01204106T ATE524832T1 (de) | 2001-04-27 | 2001-10-19 | Isolierende sperrschicht für nichtflüchtige speicheranordnung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01204106T ATE524832T1 (de) | 2001-04-27 | 2001-10-19 | Isolierende sperrschicht für nichtflüchtige speicheranordnung |
Country Status (3)
Country | Link |
---|---|
US (2) | US6784484B2 (de) |
EP (2) | EP1253646B1 (de) |
AT (2) | ATE524833T1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7332768B2 (en) * | 2001-04-27 | 2008-02-19 | Interuniversitair Microelektronica Centrum (Imec) | Non-volatile memory devices |
US6563185B2 (en) * | 2001-05-21 | 2003-05-13 | The Regents Of The University Of Colorado | High speed electron tunneling device and applications |
DE10158019C2 (de) * | 2001-11-27 | 2003-09-18 | Infineon Technologies Ag | Floatinggate-Feldeffekttransistor |
US6645882B1 (en) | 2002-01-17 | 2003-11-11 | Advanced Micro Devices, Inc. | Preparation of composite high-K/standard-K dielectrics for semiconductor devices |
US6586349B1 (en) | 2002-02-21 | 2003-07-01 | Advanced Micro Devices, Inc. | Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices |
US6642573B1 (en) | 2002-03-13 | 2003-11-04 | Advanced Micro Devices, Inc. | Use of high-K dielectric material in modified ONO structure for semiconductor devices |
US6617639B1 (en) * | 2002-06-21 | 2003-09-09 | Advanced Micro Devices, Inc. | Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling |
US7154779B2 (en) * | 2004-01-21 | 2006-12-26 | Sandisk Corporation | Non-volatile memory cell using high-k material inter-gate programming |
US8264028B2 (en) * | 2005-01-03 | 2012-09-11 | Macronix International Co., Ltd. | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US7612403B2 (en) | 2005-05-17 | 2009-11-03 | Micron Technology, Inc. | Low power non-volatile memory and gate stack |
US7402850B2 (en) * | 2005-06-21 | 2008-07-22 | Micron Technology, Inc. | Back-side trapped non-volatile memory device |
US7829938B2 (en) * | 2005-07-14 | 2010-11-09 | Micron Technology, Inc. | High density NAND non-volatile memory device |
EP1903602A3 (de) | 2005-07-28 | 2009-04-01 | Interuniversitair Microelektronica Centrum Vzw | Nichtflüchtiger Speichertransistor |
EP1748473A3 (de) * | 2005-07-28 | 2009-04-01 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Nichtflüchtiger Speichertransistor mit verteilten Ladungsspeicherstellen |
EP1748472A1 (de) | 2005-07-28 | 2007-01-31 | Interuniversitair Microelektronica Centrum Vzw | Nichtflüchtiger Speichertransistor |
US7629641B2 (en) * | 2005-08-31 | 2009-12-08 | Micron Technology, Inc. | Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection |
US20070059945A1 (en) * | 2005-09-12 | 2007-03-15 | Nima Mohklesi | Atomic layer deposition with nitridation and oxidation |
EP1969619A1 (de) | 2005-10-20 | 2008-09-17 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Verfahren zum herstellen einer dielektrischen schicht mit hohem k |
DE102005053718B8 (de) * | 2005-11-10 | 2014-04-30 | Infineon Technologies Ag | Floating-Gate-Speicherzelle und Verfahren zum Herstellen einer Floating-Gate-Speicherzelle |
JP4907999B2 (ja) * | 2006-01-20 | 2012-04-04 | 株式会社東芝 | 半導体装置の製造方法 |
US20100024732A1 (en) * | 2006-06-02 | 2010-02-04 | Nima Mokhlesi | Systems for Flash Heating in Atomic Layer Deposition |
US20070277735A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US20070281105A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US20070281082A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Flash Heating in Atomic Layer Deposition |
KR100762390B1 (ko) | 2006-08-08 | 2007-10-02 | 세종대학교산학협력단 | 다층 절연박막 |
JP4997872B2 (ja) * | 2006-08-22 | 2012-08-08 | ソニー株式会社 | 不揮発性半導体メモリデバイスおよびその製造方法 |
EP2081232B1 (de) | 2007-12-27 | 2013-07-17 | Imec | Interpoly-Dielektrikumstapel mit verbesserter Immunität |
KR101435588B1 (ko) * | 2008-06-23 | 2014-09-25 | 삼성전자주식회사 | 불휘발성 메모리 소자 및 그 제조방법 |
EP2284870B1 (de) | 2009-08-12 | 2012-02-22 | Imec | Verfahren zur Herstellung einer nichtflüchtigen Floating-Gate-Speicherzelle |
JP5547217B2 (ja) | 2012-01-25 | 2014-07-09 | 株式会社東芝 | 増幅回路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4015281A (en) * | 1970-03-30 | 1977-03-29 | Hitachi, Ltd. | MIS-FETs isolated on common substrate |
US3731163A (en) * | 1972-03-22 | 1973-05-01 | United Aircraft Corp | Low voltage charge storage memory element |
US5583810A (en) | 1991-01-31 | 1996-12-10 | Interuniversitair Micro-Elektronica Centrum Vzw | Method for programming a semiconductor memory device |
JPH05121764A (ja) * | 1991-10-30 | 1993-05-18 | Rohm Co Ltd | 半導体記憶装置 |
JP3600326B2 (ja) * | 1994-09-29 | 2004-12-15 | 旺宏電子股▲ふん▼有限公司 | 不揮発性半導体メモリ装置およびその製造方法 |
US6121654A (en) * | 1997-10-10 | 2000-09-19 | The Research Foundation Of State University Of New York | Memory device having a crested tunnel barrier |
-
2001
- 2001-10-19 EP EP01204106A patent/EP1253646B1/de not_active Expired - Lifetime
- 2001-10-19 EP EP05108290A patent/EP1605517B1/de not_active Expired - Lifetime
- 2001-10-19 AT AT05108290T patent/ATE524833T1/de not_active IP Right Cessation
- 2001-10-19 AT AT01204106T patent/ATE524832T1/de not_active IP Right Cessation
-
2002
- 2002-04-25 US US10/131,923 patent/US6784484B2/en not_active Expired - Lifetime
-
2004
- 2004-06-28 US US10/880,415 patent/US7026686B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1253646A1 (de) | 2002-10-30 |
US7026686B2 (en) | 2006-04-11 |
EP1605517B1 (de) | 2011-09-14 |
US20050017288A1 (en) | 2005-01-27 |
EP1253646B1 (de) | 2011-09-14 |
EP1605517A3 (de) | 2006-04-26 |
EP1605517A8 (de) | 2006-07-05 |
US6784484B2 (en) | 2004-08-31 |
ATE524832T1 (de) | 2011-09-15 |
EP1605517A2 (de) | 2005-12-14 |
EP1605517A9 (de) | 2006-10-18 |
US20020190311A1 (en) | 2002-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE524833T1 (de) | Isolierende sperrschicht | |
TR199902534A3 (tr) | Azot oksit depolama katalizörü. | |
DE60216241D1 (de) | Rhodium-reiche sauerstoffbarrieren | |
SG136795A1 (en) | Semiconductor device and manufacturing method thereof | |
TW337035B (en) | Semiconductor device and method of manufacturing the same | |
DE69507437T2 (de) | Lichtemittierende diode mit einer aktiven schicht aus 2,5-substituiertem poly( p-phenylen-vinylen) | |
DE59407885D1 (de) | Leistungshalbleiterbauelement mit pufferschicht | |
ATE344471T1 (de) | Elektrochrome anordnung | |
WO2000041459A3 (de) | Halbleiterbauelement mit einer wolframoxidschicht und verfahren zu dessen herstellung | |
NL1013625A1 (nl) | Laterale hoogspanning halfgeleiderinrichting. | |
DE60033252D1 (de) | Mehrschichtige halbleiter-struktur mit phosphid-passiviertem germanium-substrat | |
NO990229L (no) | Halvleder-lager for sikker datalagring | |
NL1010321A1 (nl) | Wafeldrager. | |
DE69942457D1 (de) | Fahrgastdetector | |
WO2005034207A3 (en) | Varying carrier mobility on finfet active surfaces to achieve overall design goals | |
DE69920570D1 (de) | Integriertes Zweite Schicht Zugriffsschema | |
ATE341799T1 (de) | Datenträger mit transponderspule | |
BR0012762B1 (pt) | cabo elétrico, e, composição isolante com base em poliolefina. | |
HK1045024A1 (en) | Semiconductor device with deep substrate contacts. | |
EP1191604A3 (de) | Halbleiterspeicheranordnung | |
WO2003003472A3 (de) | Transistor-anordnung, verfahren zum betreiben einer transistor-anordnung als datenspeicher und verfahren zum herstellen einer transistor-anordnung | |
ES2165100T3 (es) | Cuerpo estratificado con propiedades de fosforescencia, procedimiento para su produccion y su utilizacion. | |
TW334632B (en) | Field effective semiconductor | |
SE0002223D0 (sv) | Transportband | |
BR0101577B1 (pt) | coxim de trilho para isolaÇço elÉtrica, conjunto contendo-o e isolante para o mesmo. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |