JPS5642366A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5642366A JPS5642366A JP11779779A JP11779779A JPS5642366A JP S5642366 A JPS5642366 A JP S5642366A JP 11779779 A JP11779779 A JP 11779779A JP 11779779 A JP11779779 A JP 11779779A JP S5642366 A JPS5642366 A JP S5642366A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- coated
- conductor
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11779779A JPS5642366A (en) | 1979-09-13 | 1979-09-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11779779A JPS5642366A (en) | 1979-09-13 | 1979-09-13 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5642366A true JPS5642366A (en) | 1981-04-20 |
JPS6325505B2 JPS6325505B2 (ja) | 1988-05-25 |
Family
ID=14720519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11779779A Granted JPS5642366A (en) | 1979-09-13 | 1979-09-13 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5642366A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5868960A (ja) * | 1981-09-30 | 1983-04-25 | シ−メンス・アクチエンゲゼルシヤフト | 導電層の生成方法 |
JPS59111353A (ja) * | 1982-12-17 | 1984-06-27 | Toshiba Corp | 半導体装置の製造方法 |
JPS59186365A (ja) * | 1983-04-06 | 1984-10-23 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPS63184628U (ja) * | 1987-05-20 | 1988-11-28 | ||
US4853760A (en) * | 1981-12-12 | 1989-08-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device having insulating layer including polyimide film |
WO1996017102A1 (en) * | 1994-11-21 | 1996-06-06 | Giedd Ryan E | Method for making electrical devices from ion-implanted conductive polymers |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49110279A (ja) * | 1973-02-20 | 1974-10-21 |
-
1979
- 1979-09-13 JP JP11779779A patent/JPS5642366A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49110279A (ja) * | 1973-02-20 | 1974-10-21 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5868960A (ja) * | 1981-09-30 | 1983-04-25 | シ−メンス・アクチエンゲゼルシヤフト | 導電層の生成方法 |
US4853760A (en) * | 1981-12-12 | 1989-08-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device having insulating layer including polyimide film |
JPS59111353A (ja) * | 1982-12-17 | 1984-06-27 | Toshiba Corp | 半導体装置の製造方法 |
JPS59186365A (ja) * | 1983-04-06 | 1984-10-23 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPS63184628U (ja) * | 1987-05-20 | 1988-11-28 | ||
JPH0327700Y2 (ja) * | 1987-05-20 | 1991-06-14 | ||
WO1996017102A1 (en) * | 1994-11-21 | 1996-06-06 | Giedd Ryan E | Method for making electrical devices from ion-implanted conductive polymers |
US5753523A (en) * | 1994-11-21 | 1998-05-19 | Brewer Science, Inc. | Method for making airbridge from ion-implanted conductive polymers |
Also Published As
Publication number | Publication date |
---|---|
JPS6325505B2 (ja) | 1988-05-25 |
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