JPS5630744A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5630744A
JPS5630744A JP10619179A JP10619179A JPS5630744A JP S5630744 A JPS5630744 A JP S5630744A JP 10619179 A JP10619179 A JP 10619179A JP 10619179 A JP10619179 A JP 10619179A JP S5630744 A JPS5630744 A JP S5630744A
Authority
JP
Japan
Prior art keywords
layer
wire
polysilicon layer
mask
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10619179A
Other languages
Japanese (ja)
Inventor
Takashi Morimoto
Takashi Asaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10619179A priority Critical patent/JPS5630744A/en
Publication of JPS5630744A publication Critical patent/JPS5630744A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a highly reliable multilayer wire with low resistance in a semiconductor device by forming a wire path (or interlayer connecting portion) coated with Mo or the like on the surface of a semiconductor group conductive layer on the main surface of a semiconductor substrate and surrounding it with an insulating layer so as to form the same planar surface as the Mo film. CONSTITUTION:A doped polysilicon layer 12 is formed on an Si substrate 11, an Mo mask 13 is coated thereon, and a pattern of a wiring path 14 is formed thereon. Then, O2 ions are implanted in a polysilicon layer 12 by utilizing the Mo mask 13 to convert it into an SiO2 layer 15. By considering the fact that the polysilicon layer 12 becomes in thickness double of the layer 12 at this time it is so defined that the exposed surface of the wiring path 14 may become in the same plane as the surface of the layer 15 after the insulation. Such a configuration can prevent resultantly the disconnection of the wire and improper insulation, and can also sufficiently reduce the resistance value of the wire.
JP10619179A 1979-08-21 1979-08-21 Semiconductor device Pending JPS5630744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10619179A JPS5630744A (en) 1979-08-21 1979-08-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10619179A JPS5630744A (en) 1979-08-21 1979-08-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5630744A true JPS5630744A (en) 1981-03-27

Family

ID=14427293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10619179A Pending JPS5630744A (en) 1979-08-21 1979-08-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5630744A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222653A (en) * 1985-11-18 1987-09-30 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222653A (en) * 1985-11-18 1987-09-30 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH0584666B2 (en) * 1985-11-18 1993-12-02 Mitsubishi Electric Corp

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