JPS54104783A - Manufacture for mos type semiconductor device - Google Patents

Manufacture for mos type semiconductor device

Info

Publication number
JPS54104783A
JPS54104783A JP1167978A JP1167978A JPS54104783A JP S54104783 A JPS54104783 A JP S54104783A JP 1167978 A JP1167978 A JP 1167978A JP 1167978 A JP1167978 A JP 1167978A JP S54104783 A JPS54104783 A JP S54104783A
Authority
JP
Japan
Prior art keywords
film
substrate
gate
etching
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1167978A
Other languages
Japanese (ja)
Inventor
Kazuya Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1167978A priority Critical patent/JPS54104783A/en
Publication of JPS54104783A publication Critical patent/JPS54104783A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To avoid open wire of electrode wiring and to make high in the density of MOS transistor, by implanting the field and gate in the Si substrate, and making flat the surface in mating with the source and drain region.
CONSTITUTION: The Si3N4 film 41 is coated on the Si substrate 40, covering the gate, source and drain forming region with the photo sensitive resin film 42 and the film 41 exposed is removed by etching, and the substrate projected is made thin. Next, the film 42 is removed, and thick SiO2 film 43 is caused on the substrate made thin with selective oxidation, making the surface flat, and the pattern 44 of photosensitive resin film is placed between the films. After that, the film 41 at the both sides of the pattern 44 is removed with etching, forming the source region 45 and the drain region 46 of different conduction type as the substrate 41 in the substrate 40 by diffusion. The pattern 44 is removed and the concave 48 is made between the regions 45 and 46 with etching. Further, the Al gate 51 is implanted via the gate SiO2 film 49 in it, producing flat surface.
COPYRIGHT: (C)1979,JPO&Japio
JP1167978A 1978-02-03 1978-02-03 Manufacture for mos type semiconductor device Pending JPS54104783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1167978A JPS54104783A (en) 1978-02-03 1978-02-03 Manufacture for mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1167978A JPS54104783A (en) 1978-02-03 1978-02-03 Manufacture for mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS54104783A true JPS54104783A (en) 1979-08-17

Family

ID=11784672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1167978A Pending JPS54104783A (en) 1978-02-03 1978-02-03 Manufacture for mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS54104783A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device
JPS5910274A (en) * 1982-07-09 1984-01-19 Nec Corp Mis type semiconductor device
JPS60133754A (en) * 1983-12-21 1985-07-16 Toshiba Corp Manufacture of semiconductor device
JPH0316267A (en) * 1989-06-14 1991-01-24 Oki Electric Ind Co Ltd Manufacture of buried gate mos-fet

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device
JPS5910274A (en) * 1982-07-09 1984-01-19 Nec Corp Mis type semiconductor device
JPS60133754A (en) * 1983-12-21 1985-07-16 Toshiba Corp Manufacture of semiconductor device
JPH0316267A (en) * 1989-06-14 1991-01-24 Oki Electric Ind Co Ltd Manufacture of buried gate mos-fet

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