JPS54104783A - Manufacture for mos type semiconductor device - Google Patents
Manufacture for mos type semiconductor deviceInfo
- Publication number
- JPS54104783A JPS54104783A JP1167978A JP1167978A JPS54104783A JP S54104783 A JPS54104783 A JP S54104783A JP 1167978 A JP1167978 A JP 1167978A JP 1167978 A JP1167978 A JP 1167978A JP S54104783 A JPS54104783 A JP S54104783A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- gate
- etching
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To avoid open wire of electrode wiring and to make high in the density of MOS transistor, by implanting the field and gate in the Si substrate, and making flat the surface in mating with the source and drain region.
CONSTITUTION: The Si3N4 film 41 is coated on the Si substrate 40, covering the gate, source and drain forming region with the photo sensitive resin film 42 and the film 41 exposed is removed by etching, and the substrate projected is made thin. Next, the film 42 is removed, and thick SiO2 film 43 is caused on the substrate made thin with selective oxidation, making the surface flat, and the pattern 44 of photosensitive resin film is placed between the films. After that, the film 41 at the both sides of the pattern 44 is removed with etching, forming the source region 45 and the drain region 46 of different conduction type as the substrate 41 in the substrate 40 by diffusion. The pattern 44 is removed and the concave 48 is made between the regions 45 and 46 with etching. Further, the Al gate 51 is implanted via the gate SiO2 film 49 in it, producing flat surface.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1167978A JPS54104783A (en) | 1978-02-03 | 1978-02-03 | Manufacture for mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1167978A JPS54104783A (en) | 1978-02-03 | 1978-02-03 | Manufacture for mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54104783A true JPS54104783A (en) | 1979-08-17 |
Family
ID=11784672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1167978A Pending JPS54104783A (en) | 1978-02-03 | 1978-02-03 | Manufacture for mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54104783A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681974A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Manufacture of mos type semiconductor device |
JPS5910274A (en) * | 1982-07-09 | 1984-01-19 | Nec Corp | Mis type semiconductor device |
JPS60133754A (en) * | 1983-12-21 | 1985-07-16 | Toshiba Corp | Manufacture of semiconductor device |
JPH0316267A (en) * | 1989-06-14 | 1991-01-24 | Oki Electric Ind Co Ltd | Manufacture of buried gate mos-fet |
-
1978
- 1978-02-03 JP JP1167978A patent/JPS54104783A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681974A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Manufacture of mos type semiconductor device |
JPS5910274A (en) * | 1982-07-09 | 1984-01-19 | Nec Corp | Mis type semiconductor device |
JPS60133754A (en) * | 1983-12-21 | 1985-07-16 | Toshiba Corp | Manufacture of semiconductor device |
JPH0316267A (en) * | 1989-06-14 | 1991-01-24 | Oki Electric Ind Co Ltd | Manufacture of buried gate mos-fet |
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