JPS5779670A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5779670A
JPS5779670A JP15636380A JP15636380A JPS5779670A JP S5779670 A JPS5779670 A JP S5779670A JP 15636380 A JP15636380 A JP 15636380A JP 15636380 A JP15636380 A JP 15636380A JP S5779670 A JPS5779670 A JP S5779670A
Authority
JP
Japan
Prior art keywords
insulating film
parts
aperture
electrodes
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15636380A
Other languages
Japanese (ja)
Inventor
Tatsuo Tokue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15636380A priority Critical patent/JPS5779670A/en
Publication of JPS5779670A publication Critical patent/JPS5779670A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To make so as not to be influenced by accuracy required for mask alignment by a method wherein aperture parts of S, D and G region parts are provided on the first insulating film on an active layer, and after electrodes are formed on the S and D region parts keeping the aperture part of the G region part covered with the second insulating film, the G electrode is formed. CONSTITUTION:An insulating film 33 having aperture parts 35, 36 and 34 and acting as S, D and G regions is formed on an active layer 32 on a substrate 31. The second insulating film Si3N4 film 37 is provided over the whole surface. Aperture parts 39, 40 in the S, D regions are provided by utilizing a resist layer 38 as a mask. On this aperture parts, electrodes 41, 42 for the S, D regions are formed, and over the whole surface the third insulating film Si3N4 film 43 is formed. An aperture part 44 on a gate region is formed by using a resist layer 47 as a mask, and a gate electrode 48 is provided. Further, S, D leading electrodes 49, 50 are formed. Hereby, it is possible to control a distance between the electrodes regardless of mask alignment accuracy and to mass-produce with high reliability.
JP15636380A 1980-11-06 1980-11-06 Manufacture of semiconductor device Pending JPS5779670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15636380A JPS5779670A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15636380A JPS5779670A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5779670A true JPS5779670A (en) 1982-05-18

Family

ID=15626112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15636380A Pending JPS5779670A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5779670A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141272A (en) * 1983-02-02 1984-08-13 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6049677A (en) * 1983-08-29 1985-03-18 Mitsubishi Electric Corp Manufacture of field-effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141272A (en) * 1983-02-02 1984-08-13 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6049677A (en) * 1983-08-29 1985-03-18 Mitsubishi Electric Corp Manufacture of field-effect transistor

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