JPS54141585A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS54141585A
JPS54141585A JP5031778A JP5031778A JPS54141585A JP S54141585 A JPS54141585 A JP S54141585A JP 5031778 A JP5031778 A JP 5031778A JP 5031778 A JP5031778 A JP 5031778A JP S54141585 A JPS54141585 A JP S54141585A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
sio2
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5031778A
Other languages
Japanese (ja)
Other versions
JPS6359257B2 (en
Inventor
Michihiro Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5031778A priority Critical patent/JPS54141585A/en
Publication of JPS54141585A publication Critical patent/JPS54141585A/en
Publication of JPS6359257B2 publication Critical patent/JPS6359257B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Abstract

PURPOSE:To form resistors of a small area and arbitrary values on chips by making ion implantation on poly-Si. CONSTITUTION:Low concentration or undosed poly-Si 3 is formed on the SiO2 21 on a semiconductor substrate 1 and Al wirings 4 are provided at both ends. After the entire surface is covered with SiO2 21', B ions are implanted into the layer 3 through the film 21' and are annealed, then the layer 3 may be lowered to a required value. Controlling the rate of implantation enables arbitrary resistance values to be obtained and enables the optimum device to be obtained through considerably evened characteristics and functions.
JP5031778A 1978-04-26 1978-04-26 Semiconductor integrated circuit device Granted JPS54141585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5031778A JPS54141585A (en) 1978-04-26 1978-04-26 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5031778A JPS54141585A (en) 1978-04-26 1978-04-26 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS54141585A true JPS54141585A (en) 1979-11-02
JPS6359257B2 JPS6359257B2 (en) 1988-11-18

Family

ID=12855516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5031778A Granted JPS54141585A (en) 1978-04-26 1978-04-26 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS54141585A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148422A (en) * 1979-05-09 1980-11-19 Hitachi Ltd Manufacturing of semiconductor device
JPS56121264U (en) * 1980-02-18 1981-09-16
JPS59119756A (en) * 1982-12-25 1984-07-11 Toshiba Corp Semiconductor device
JPS60150678A (en) * 1984-01-18 1985-08-08 Mitsubishi Electric Corp Protective circuit for input to semiconductor device
JPS61263254A (en) * 1985-05-17 1986-11-21 Nec Corp Input protecting device
JPH04355969A (en) * 1991-08-22 1992-12-09 Rohm Co Ltd Separate diode device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943574A (en) * 1972-08-30 1974-04-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943574A (en) * 1972-08-30 1974-04-24

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148422A (en) * 1979-05-09 1980-11-19 Hitachi Ltd Manufacturing of semiconductor device
JPS56121264U (en) * 1980-02-18 1981-09-16
JPS59119756A (en) * 1982-12-25 1984-07-11 Toshiba Corp Semiconductor device
JPS60150678A (en) * 1984-01-18 1985-08-08 Mitsubishi Electric Corp Protective circuit for input to semiconductor device
JPS61263254A (en) * 1985-05-17 1986-11-21 Nec Corp Input protecting device
JPH04355969A (en) * 1991-08-22 1992-12-09 Rohm Co Ltd Separate diode device

Also Published As

Publication number Publication date
JPS6359257B2 (en) 1988-11-18

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