JPS57184248A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57184248A
JPS57184248A JP6901481A JP6901481A JPS57184248A JP S57184248 A JPS57184248 A JP S57184248A JP 6901481 A JP6901481 A JP 6901481A JP 6901481 A JP6901481 A JP 6901481A JP S57184248 A JPS57184248 A JP S57184248A
Authority
JP
Japan
Prior art keywords
polycrystal
disconnection
film
layers
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6901481A
Other languages
Japanese (ja)
Inventor
Nobuhiro Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6901481A priority Critical patent/JPS57184248A/en
Publication of JPS57184248A publication Critical patent/JPS57184248A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To prevent the disconnection of wiring due to difference in stages by depositing polycrystal Si onto a gate oxide film, growing the polycrystal Si so as to contain a gate corresponding section and a contact region and forming an electrode extracting section. CONSTITUTION:A field oxide 103 and a channel stopper region 102 are formed to a P type Si substrate 101, the first polycrystal Si layer 105 is shaped through a gate insulating film 104, and the oxide film of an unnecessary section is removed and an N type source-drain region 107 is formed. The second polycrystal Si layers 106 are shaped, and etched according to a predetermined pattern, and a low-concentration source-drain region 108 is molded through ion implantation. A CVDPSG film 110 is deposited onto the whole surface, the surface is removed, the layers 106 are exposed, and electrodes 111 are formed. Accordingly, the surface is flattened, and the disconnection of wiring is prevented.
JP6901481A 1981-05-08 1981-05-08 Manufacture of semiconductor device Pending JPS57184248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6901481A JPS57184248A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6901481A JPS57184248A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57184248A true JPS57184248A (en) 1982-11-12

Family

ID=13390305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6901481A Pending JPS57184248A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57184248A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59204279A (en) * 1983-05-06 1984-11-19 Matsushita Electronics Corp Manufacture of metallic insulator semiconductor integrated circuit
JPH02206171A (en) * 1989-02-06 1990-08-15 Nec Corp Semiconductor device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544773A (en) * 1978-09-26 1980-03-29 Matsushita Electric Ind Co Ltd Producing method for insulative gate type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544773A (en) * 1978-09-26 1980-03-29 Matsushita Electric Ind Co Ltd Producing method for insulative gate type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59204279A (en) * 1983-05-06 1984-11-19 Matsushita Electronics Corp Manufacture of metallic insulator semiconductor integrated circuit
JPH056344B2 (en) * 1983-05-06 1993-01-26 Matsushita Electronics Corp
JPH02206171A (en) * 1989-02-06 1990-08-15 Nec Corp Semiconductor device and manufacture thereof

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