ZA882324B - Gate turn-off thyristor and method of producing same - Google Patents
Gate turn-off thyristor and method of producing sameInfo
- Publication number
- ZA882324B ZA882324B ZA882324A ZA882324A ZA882324B ZA 882324 B ZA882324 B ZA 882324B ZA 882324 A ZA882324 A ZA 882324A ZA 882324 A ZA882324 A ZA 882324A ZA 882324 B ZA882324 B ZA 882324B
- Authority
- ZA
- South Africa
- Prior art keywords
- thyristor
- producing same
- gate turn
- gate
- turn
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH132787 | 1987-04-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA882324B true ZA882324B (en) | 1989-03-29 |
Family
ID=4207867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA882324A ZA882324B (en) | 1987-04-07 | 1988-03-31 | Gate turn-off thyristor and method of producing same |
Country Status (6)
Country | Link |
---|---|
US (2) | US4910573A (ja) |
EP (1) | EP0285923B1 (ja) |
JP (1) | JP2622521B2 (ja) |
CN (1) | CN1008782B (ja) |
DE (1) | DE3884652D1 (ja) |
ZA (1) | ZA882324B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE58905844D1 (de) * | 1989-02-02 | 1993-11-11 | Asea Brown Boveri | Druckkontaktiertes Halbleiterbauelement. |
US5204273A (en) * | 1990-08-20 | 1993-04-20 | Siemens Aktiengesellschaft | Method for the manufacturing of a thyristor with defined lateral resistor |
DE4313170A1 (de) * | 1993-04-22 | 1994-10-27 | Abb Management Ag | Leistungshalbleiterbauelement |
DE19829614B4 (de) * | 1998-07-02 | 2004-09-23 | Semikron Elektronik Gmbh | Verfahren zur Herstellung eines Leistungshalbleiterbauelementes |
DE69933462T8 (de) * | 1999-06-29 | 2007-11-22 | Mitsubishi Denki K.K. | Leistungsschaltender halbleiter |
CN109686786B (zh) * | 2018-12-27 | 2024-06-11 | 清华大学 | 具有隔离阴极结构的集成门极换流晶闸管及其制造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4514747A (en) * | 1978-08-07 | 1985-04-30 | Hitachi, Ltd. | Field controlled thyristor with double-diffused source region |
JPS6046551B2 (ja) * | 1978-08-07 | 1985-10-16 | 株式会社日立製作所 | 半導体スイツチング素子およびその製法 |
DE2941021C2 (de) * | 1979-10-10 | 1985-07-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterbauelement mit mindestens einer Emitter-Basis-Struktur |
DE3277352D1 (en) * | 1981-04-30 | 1987-10-22 | Toshiba Kk | Improved emitter structure for semiconductor devices |
JPS6115366A (ja) * | 1984-06-30 | 1986-01-23 | Mitsuo Kusano | ゲ−トタ−ンオフサイリスタ及びその製造方法 |
CH668505A5 (de) * | 1985-03-20 | 1988-12-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
US4757025A (en) * | 1985-03-25 | 1988-07-12 | Motorola Inc. | Method of making gate turn off switch with anode short and buried base |
-
1988
- 1988-03-25 EP EP88104786A patent/EP0285923B1/de not_active Expired - Lifetime
- 1988-03-25 DE DE88104786T patent/DE3884652D1/de not_active Expired - Fee Related
- 1988-03-31 ZA ZA882324A patent/ZA882324B/xx unknown
- 1988-04-04 US US07/177,489 patent/US4910573A/en not_active Expired - Fee Related
- 1988-04-06 JP JP63084986A patent/JP2622521B2/ja not_active Expired - Lifetime
- 1988-04-07 CN CN88102261A patent/CN1008782B/zh not_active Expired
-
1989
- 1989-08-16 US US07/394,555 patent/US5057440A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2622521B2 (ja) | 1997-06-18 |
US5057440A (en) | 1991-10-15 |
CN1008782B (zh) | 1990-07-11 |
DE3884652D1 (de) | 1993-11-11 |
EP0285923A1 (de) | 1988-10-12 |
CN88102261A (zh) | 1988-11-23 |
US4910573A (en) | 1990-03-20 |
JPS63262870A (ja) | 1988-10-31 |
EP0285923B1 (de) | 1993-10-06 |
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