ZA882324B - Gate turn-off thyristor and method of producing same - Google Patents

Gate turn-off thyristor and method of producing same

Info

Publication number
ZA882324B
ZA882324B ZA882324A ZA882324A ZA882324B ZA 882324 B ZA882324 B ZA 882324B ZA 882324 A ZA882324 A ZA 882324A ZA 882324 A ZA882324 A ZA 882324A ZA 882324 B ZA882324 B ZA 882324B
Authority
ZA
South Africa
Prior art keywords
thyristor
producing same
gate turn
gate
turn
Prior art date
Application number
ZA882324A
Other languages
English (en)
Inventor
Peter Roggwiller
Roggwiller Peter
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of ZA882324B publication Critical patent/ZA882324B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
ZA882324A 1987-04-07 1988-03-31 Gate turn-off thyristor and method of producing same ZA882324B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH132787 1987-04-07

Publications (1)

Publication Number Publication Date
ZA882324B true ZA882324B (en) 1989-03-29

Family

ID=4207867

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA882324A ZA882324B (en) 1987-04-07 1988-03-31 Gate turn-off thyristor and method of producing same

Country Status (6)

Country Link
US (2) US4910573A (ja)
EP (1) EP0285923B1 (ja)
JP (1) JP2622521B2 (ja)
CN (1) CN1008782B (ja)
DE (1) DE3884652D1 (ja)
ZA (1) ZA882324B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE58905844D1 (de) * 1989-02-02 1993-11-11 Asea Brown Boveri Druckkontaktiertes Halbleiterbauelement.
US5204273A (en) * 1990-08-20 1993-04-20 Siemens Aktiengesellschaft Method for the manufacturing of a thyristor with defined lateral resistor
DE4313170A1 (de) * 1993-04-22 1994-10-27 Abb Management Ag Leistungshalbleiterbauelement
DE19829614B4 (de) * 1998-07-02 2004-09-23 Semikron Elektronik Gmbh Verfahren zur Herstellung eines Leistungshalbleiterbauelementes
DE69933462T8 (de) * 1999-06-29 2007-11-22 Mitsubishi Denki K.K. Leistungsschaltender halbleiter
CN109686786B (zh) * 2018-12-27 2024-06-11 清华大学 具有隔离阴极结构的集成门极换流晶闸管及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514747A (en) * 1978-08-07 1985-04-30 Hitachi, Ltd. Field controlled thyristor with double-diffused source region
JPS6046551B2 (ja) * 1978-08-07 1985-10-16 株式会社日立製作所 半導体スイツチング素子およびその製法
DE2941021C2 (de) * 1979-10-10 1985-07-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterbauelement mit mindestens einer Emitter-Basis-Struktur
DE3277352D1 (en) * 1981-04-30 1987-10-22 Toshiba Kk Improved emitter structure for semiconductor devices
JPS6115366A (ja) * 1984-06-30 1986-01-23 Mitsuo Kusano ゲ−トタ−ンオフサイリスタ及びその製造方法
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
US4757025A (en) * 1985-03-25 1988-07-12 Motorola Inc. Method of making gate turn off switch with anode short and buried base

Also Published As

Publication number Publication date
JP2622521B2 (ja) 1997-06-18
US5057440A (en) 1991-10-15
CN1008782B (zh) 1990-07-11
DE3884652D1 (de) 1993-11-11
EP0285923A1 (de) 1988-10-12
CN88102261A (zh) 1988-11-23
US4910573A (en) 1990-03-20
JPS63262870A (ja) 1988-10-31
EP0285923B1 (de) 1993-10-06

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