ZA874212B - Gallium hydride-trialkylamine adducts,and their use in deposition of iii-v compound films - Google Patents

Gallium hydride-trialkylamine adducts,and their use in deposition of iii-v compound films

Info

Publication number
ZA874212B
ZA874212B ZA874212A ZA874212A ZA874212B ZA 874212 B ZA874212 B ZA 874212B ZA 874212 A ZA874212 A ZA 874212A ZA 874212 A ZA874212 A ZA 874212A ZA 874212 B ZA874212 B ZA 874212B
Authority
ZA
South Africa
Prior art keywords
trialkylamine
adducts
deposition
iii
compound films
Prior art date
Application number
ZA874212A
Other languages
English (en)
Inventor
A. Melas Andreas
Braunagel Norbert
Original Assignee
Morton Thiokol, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Morton Thiokol, Inc. filed Critical Morton Thiokol, Inc.
Publication of ZA874212B publication Critical patent/ZA874212B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ZA874212A 1986-07-01 1987-06-11 Gallium hydride-trialkylamine adducts,and their use in deposition of iii-v compound films ZA874212B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/880,760 US4740606A (en) 1986-07-01 1986-07-01 Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films

Publications (1)

Publication Number Publication Date
ZA874212B true ZA874212B (en) 1987-12-15

Family

ID=25377010

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA874212A ZA874212B (en) 1986-07-01 1987-06-11 Gallium hydride-trialkylamine adducts,and their use in deposition of iii-v compound films

Country Status (8)

Country Link
US (1) US4740606A (xx)
EP (1) EP0251555B1 (xx)
JP (1) JPS6322591A (xx)
KR (1) KR880001684A (xx)
DE (1) DE3762746D1 (xx)
DK (1) DK335487A (xx)
IL (1) IL82891A0 (xx)
ZA (1) ZA874212B (xx)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063166A (en) * 1988-04-29 1991-11-05 Sri International Method of forming a low dislocation density semiconductor device
US4916088A (en) * 1988-04-29 1990-04-10 Sri International Method of making a low dislocation density semiconductor device
US5068695A (en) * 1988-04-29 1991-11-26 Sri International Low dislocation density semiconductor device
GB8819761D0 (en) * 1988-08-19 1988-09-21 Secr Defence Growth of znse & zns layers
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
DE3907579A1 (de) * 1989-03-09 1990-09-13 Merck Patent Gmbh Verwendung von metallorganischen verbindungen zur abscheidung duenner filme aus der gasphase
DE3907581A1 (de) * 1989-03-09 1990-09-13 Merck Patent Gmbh Metallorganische adduktverbindungen
US5003092A (en) * 1989-06-02 1991-03-26 The Research Foundation Of State University Of Ny Use of R2 MR' to prepare semiconductor and ceramic precursors
GB8928824D0 (en) * 1989-12-21 1990-02-28 Isis Innovation Processes for the deposition of thin films on solids
DE4293092D2 (de) * 1991-10-09 1994-10-20 Aixtron Gmbh Verfahren zum Beschichten von Substraten
GB9919071D0 (en) 1999-08-12 1999-10-13 Isis Innovation Deposition compounds
TW200619222A (en) * 2004-09-02 2006-06-16 Rohm & Haas Elect Mat Method for making organometallic compounds
CN102414797A (zh) * 2009-04-29 2012-04-11 应用材料公司 在HVPE中形成原位预GaN沉积层的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264689A (xx) * 1960-05-14
US3607257A (en) * 1968-08-27 1971-09-21 Eastman Kodak Co Photoconductive compositions and elements
FR2356271A1 (fr) * 1976-02-06 1978-01-20 Labo Electronique Physique Croissance acceleree en phase vapeur
FR2403646A1 (fr) * 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
US4204893A (en) * 1979-02-16 1980-05-27 Bell Telephone Laboratories, Incorporated Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source
US4279670A (en) * 1979-08-06 1981-07-21 Raytheon Company Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
EP0174743A3 (en) * 1984-09-05 1988-06-08 Morton Thiokol, Inc. Process for transition metal nitrides thin film deposition
CA1250511A (en) * 1984-10-31 1989-02-28 Rajaram Bhat Technique for the growth of epitaxial compound semiconductor films

Also Published As

Publication number Publication date
JPS6322591A (ja) 1988-01-30
JPH0314833B2 (xx) 1991-02-27
EP0251555B1 (en) 1990-05-16
DK335487D0 (da) 1987-06-30
DE3762746D1 (de) 1990-06-21
IL82891A0 (en) 1987-12-20
US4740606A (en) 1988-04-26
DK335487A (da) 1988-01-02
KR880001684A (ko) 1988-04-26
EP0251555A1 (en) 1988-01-07

Similar Documents

Publication Publication Date Title
AU576709B2 (en) Automatically locking slider
EP0214610A3 (en) Epitaxial gallium arsenide semiconductor wafer and method of producing the same
NZ218971A (en) Porous polyolefin films and their preparation
GB2198881B (en) Transporting wafers
EP0232082A3 (en) Semiconductor deposition method and device
EP0266843A3 (en) Process for depositing small amounts of droplet-shaped solder on surfaces to be welted, and process for carrying out the process
GB8727278D0 (en) Epitaxial growth of compound semiconductor
ZA878115B (en) Cell growth rate determination
ZA874212B (en) Gallium hydride-trialkylamine adducts,and their use in deposition of iii-v compound films
AU573958B2 (en) Seat belt lock
EP0206541A3 (en) Gallium arsenide single crystals, and process for the preparation thereof
GB8714146D0 (en) Growth of semiconductor materials
GB8923820D0 (en) Compound,composition,process and use
DE3366927D1 (en) Preparation of organometallic indium and gallium compounds
GB8613163D0 (en) Sealable films
GB2168080B (en) Vapour deposition apparatus and epitaxial layer growth methods
EP0410868A3 (en) Superconducting thin film of compound oxide and process for preparing the same
AU5297886A (en) Electroplating composition and process and surfactant compound for use therein
GB8709629D0 (en) Deposition of thin films
IL85733A0 (en) Allyltellurides and their use in the mocvd growth of group ii-vi epitaxial films
DE3480009D1 (en) Silicon sources suitable for use in molecular beam epitaxy deposition
GB8727277D0 (en) Growth of doped semiconductor monolayers
GB2125795B (en) Preparation of organometallic adducts of gallium and indium
GB8612024D0 (en) Growing gaas monocrystal film
ZA872721B (en) Compound,process and use