ZA711702B - Film deposition - Google Patents

Film deposition

Info

Publication number
ZA711702B
ZA711702B ZA711702A ZA711702A ZA711702B ZA 711702 B ZA711702 B ZA 711702B ZA 711702 A ZA711702 A ZA 711702A ZA 711702 A ZA711702 A ZA 711702A ZA 711702 B ZA711702 B ZA 711702B
Authority
ZA
South Africa
Prior art keywords
film deposition
deposition
film
Prior art date
Application number
ZA711702A
Other languages
English (en)
Inventor
S Aisenberg
Original Assignee
Whittaker Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Whittaker Corp filed Critical Whittaker Corp
Publication of ZA711702B publication Critical patent/ZA711702B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
ZA711702A 1970-03-20 1971-03-16 Film deposition ZA711702B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2128270A 1970-03-20 1970-03-20

Publications (1)

Publication Number Publication Date
ZA711702B true ZA711702B (en) 1971-12-29

Family

ID=21803338

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA711702A ZA711702B (en) 1970-03-20 1971-03-16 Film deposition

Country Status (5)

Country Link
DE (1) DE2113375A1 (cg-RX-API-DMAC10.html)
ES (1) ES389693A1 (cg-RX-API-DMAC10.html)
FR (1) FR2084956A5 (cg-RX-API-DMAC10.html)
GB (1) GB1341759A (cg-RX-API-DMAC10.html)
ZA (1) ZA711702B (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6040507B2 (ja) * 1978-07-08 1985-09-11 テルマク・アンラ−ゲンバウ・アクチエンゲゼルシャフト 誘電性の被加工材料上に金属層或いは合金層を積層させる方法およびこの方法を実施するための装置
JPS5957416A (ja) * 1982-09-27 1984-04-03 Konishiroku Photo Ind Co Ltd 化合物半導体層の形成方法
US4486286A (en) * 1982-09-28 1984-12-04 Nerken Research Corp. Method of depositing a carbon film on a substrate and products obtained thereby
CH664163A5 (de) * 1985-03-01 1988-02-15 Balzers Hochvakuum Verfahren zum reaktiven aufdampfen von schichten aus oxiden, nitriden, oxynitriden und karbiden.
EP0207768A3 (en) * 1985-07-01 1987-08-05 United Kingdom Atomic Energy Authority Coating improvements
EP0208487A3 (en) * 1985-07-01 1987-08-19 United Kingdom Atomic Energy Authority Coating improvements
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US4822466A (en) * 1987-06-25 1989-04-18 University Of Houston - University Park Chemically bonded diamond films and method for producing same
US4816291A (en) * 1987-08-19 1989-03-28 The Regents Of The University Of California Process for making diamond, doped diamond, diamond-cubic boron nitride composite films
GB2213501A (en) * 1987-12-11 1989-08-16 Plessey Co Plc Production of superconducting thin films by ion beam sputtering from a single ceramic target
US7608151B2 (en) * 2005-03-07 2009-10-27 Sub-One Technology, Inc. Method and system for coating sections of internal surfaces
CN115961263B (zh) * 2022-12-30 2025-04-25 北京市科学技术研究院 一种中和离子束中高电荷的聚合物沉积装置

Also Published As

Publication number Publication date
FR2084956A5 (cg-RX-API-DMAC10.html) 1971-12-17
ES389693A1 (es) 1974-03-01
GB1341759A (en) 1973-12-25
DE2113375A1 (de) 1971-10-07

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