GB1341759A - Film deposition - Google Patents
Film depositionInfo
- Publication number
- GB1341759A GB1341759A GB2334371A GB2334371A GB1341759A GB 1341759 A GB1341759 A GB 1341759A GB 2334371 A GB2334371 A GB 2334371A GB 2334371 A GB2334371 A GB 2334371A GB 1341759 A GB1341759 A GB 1341759A
- Authority
- GB
- United Kingdom
- Prior art keywords
- source
- substrate
- silicon
- electrodes
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 abstract 7
- 238000000151 deposition Methods 0.000 abstract 6
- 150000002500 ions Chemical class 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 229930195733 hydrocarbon Natural products 0.000 abstract 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 abstract 1
- 150000003658 tungsten compounds Chemical class 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2128270A | 1970-03-20 | 1970-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1341759A true GB1341759A (en) | 1973-12-25 |
Family
ID=21803338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2334371A Expired GB1341759A (en) | 1970-03-20 | 1971-05-19 | Film deposition |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE2113375A1 (cg-RX-API-DMAC10.html) |
| ES (1) | ES389693A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2084956A5 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1341759A (cg-RX-API-DMAC10.html) |
| ZA (1) | ZA711702B (cg-RX-API-DMAC10.html) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127439A (en) * | 1982-09-27 | 1984-04-11 | Konishiroku Photo Ind | Vacuum depositing compound semi conductors in activated hydrogen |
| GB2128637A (en) * | 1982-09-28 | 1984-05-02 | Technion Res & Dev Foundation | Depositing a carbon film on a substrate |
| GB2171726A (en) * | 1985-03-01 | 1986-09-03 | Balzers Hochvakuum | A method for reactive evaporation deposition of layers of oxides nitrides oxynitrides and carbides |
| GB2182350A (en) * | 1985-07-01 | 1987-05-13 | Atomic Energy Authority Uk | Sputter ion plating |
| GB2194555A (en) * | 1986-07-31 | 1988-03-09 | Nippon Telegraph & Telephone | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
| GB2178061B (en) * | 1985-07-01 | 1989-04-26 | Atomic Energy Authority Uk | Coating improvements |
| GB2213501A (en) * | 1987-12-11 | 1989-08-16 | Plessey Co Plc | Production of superconducting thin films by ion beam sputtering from a single ceramic target |
| US7608151B2 (en) * | 2005-03-07 | 2009-10-27 | Sub-One Technology, Inc. | Method and system for coating sections of internal surfaces |
| CN115961263A (zh) * | 2022-12-30 | 2023-04-14 | 北京市科学技术研究院 | 一种中和离子束中高电荷的聚合物沉积装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6040507B2 (ja) * | 1978-07-08 | 1985-09-11 | テルマク・アンラ−ゲンバウ・アクチエンゲゼルシャフト | 誘電性の被加工材料上に金属層或いは合金層を積層させる方法およびこの方法を実施するための装置 |
| US4822466A (en) * | 1987-06-25 | 1989-04-18 | University Of Houston - University Park | Chemically bonded diamond films and method for producing same |
| US4816291A (en) * | 1987-08-19 | 1989-03-28 | The Regents Of The University Of California | Process for making diamond, doped diamond, diamond-cubic boron nitride composite films |
-
1971
- 1971-03-16 ZA ZA711702A patent/ZA711702B/xx unknown
- 1971-03-17 ES ES389693A patent/ES389693A1/es not_active Expired
- 1971-03-19 FR FR7109878A patent/FR2084956A5/fr not_active Expired
- 1971-03-19 DE DE19712113375 patent/DE2113375A1/de active Pending
- 1971-05-19 GB GB2334371A patent/GB1341759A/en not_active Expired
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127439A (en) * | 1982-09-27 | 1984-04-11 | Konishiroku Photo Ind | Vacuum depositing compound semi conductors in activated hydrogen |
| GB2128637A (en) * | 1982-09-28 | 1984-05-02 | Technion Res & Dev Foundation | Depositing a carbon film on a substrate |
| GB2171726A (en) * | 1985-03-01 | 1986-09-03 | Balzers Hochvakuum | A method for reactive evaporation deposition of layers of oxides nitrides oxynitrides and carbides |
| GB2178061B (en) * | 1985-07-01 | 1989-04-26 | Atomic Energy Authority Uk | Coating improvements |
| GB2182350B (en) * | 1985-07-01 | 1989-04-26 | Atomic Energy Authority Uk | Coating improvements |
| GB2182350A (en) * | 1985-07-01 | 1987-05-13 | Atomic Energy Authority Uk | Sputter ion plating |
| GB2194555A (en) * | 1986-07-31 | 1988-03-09 | Nippon Telegraph & Telephone | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
| GB2194555B (en) * | 1986-07-31 | 1991-02-13 | Nippon Telegraph & Telephone | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
| US5016563A (en) * | 1986-07-31 | 1991-05-21 | Nippon Telegraph And Telephone Corporation | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
| GB2213501A (en) * | 1987-12-11 | 1989-08-16 | Plessey Co Plc | Production of superconducting thin films by ion beam sputtering from a single ceramic target |
| US7608151B2 (en) * | 2005-03-07 | 2009-10-27 | Sub-One Technology, Inc. | Method and system for coating sections of internal surfaces |
| CN115961263A (zh) * | 2022-12-30 | 2023-04-14 | 北京市科学技术研究院 | 一种中和离子束中高电荷的聚合物沉积装置 |
| CN115961263B (zh) * | 2022-12-30 | 2025-04-25 | 北京市科学技术研究院 | 一种中和离子束中高电荷的聚合物沉积装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2084956A5 (cg-RX-API-DMAC10.html) | 1971-12-17 |
| ES389693A1 (es) | 1974-03-01 |
| DE2113375A1 (de) | 1971-10-07 |
| ZA711702B (en) | 1971-12-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |