ZA202306108B - Noise-reduction multistage liquid oxygen collapse rock blasting device - Google Patents

Noise-reduction multistage liquid oxygen collapse rock blasting device

Info

Publication number
ZA202306108B
ZA202306108B ZA2023/06108A ZA202306108A ZA202306108B ZA 202306108 B ZA202306108 B ZA 202306108B ZA 2023/06108 A ZA2023/06108 A ZA 2023/06108A ZA 202306108 A ZA202306108 A ZA 202306108A ZA 202306108 B ZA202306108 B ZA 202306108B
Authority
ZA
South Africa
Prior art keywords
liquid oxygen
noise
blasting device
reduction
rock blasting
Prior art date
Application number
ZA2023/06108A
Other languages
English (en)
Inventor
Liang Cui
Yingyu Zhou
Chong Yang
Donghui Luo
Chuan Zhang
Yajun Wang
Xiaodong Luo
Chao Han
Yongkang Li
Jianrong Yao
Zhizhao Song
Wenshuang Cui
Wenlong Zhang
Chao Xie
Junqi Yang
Original Assignee
China Railway Seventh Bureau Group Nanjing Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Railway Seventh Bureau Group Nanjing Eng Co Ltd filed Critical China Railway Seventh Bureau Group Nanjing Eng Co Ltd
Publication of ZA202306108B publication Critical patent/ZA202306108B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14667—Colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Earth Drilling (AREA)
ZA2023/06108A 2018-07-17 2023-06-08 Noise-reduction multistage liquid oxygen collapse rock blasting device ZA202306108B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018134286 2018-07-17

Publications (1)

Publication Number Publication Date
ZA202306108B true ZA202306108B (en) 2024-04-24

Family

ID=69164530

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA2023/06108A ZA202306108B (en) 2018-07-17 2023-06-08 Noise-reduction multistage liquid oxygen collapse rock blasting device

Country Status (7)

Country Link
US (1) US12040340B2 (de)
JP (1) JP7433231B2 (de)
CN (1) CN112385042B (de)
DE (1) DE112019003626T5 (de)
TW (1) TW202013695A (de)
WO (1) WO2020017305A1 (de)
ZA (1) ZA202306108B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114846609A (zh) 2020-01-29 2022-08-02 索尼半导体解决方案公司 固态成像元件和电子设备
CN113451305A (zh) 2020-07-07 2021-09-28 台湾积体电路制造股份有限公司 具有掩埋偏置焊盘的半导体器件
WO2023223801A1 (ja) * 2022-05-17 2023-11-23 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および光検出装置ならびに電子機器
WO2024202671A1 (ja) * 2023-03-31 2024-10-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MXPA99002142A (es) 1996-09-05 2004-08-27 Rudolf Schwarte Metodo y aparato para determinar la informacion defase y/o amplitud de una onda electromagnetica.
JP5564847B2 (ja) 2009-07-23 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5306123B2 (ja) 2009-09-11 2013-10-02 株式会社東芝 裏面照射型固体撮像装置
JP2016009777A (ja) 2014-06-25 2016-01-18 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP6725231B2 (ja) 2015-10-06 2020-07-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および電子装置
CN107534749B (zh) 2015-11-30 2020-03-03 奥林巴斯株式会社 摄像元件、内窥镜以及内窥镜系统
TWI756207B (zh) 2016-03-01 2022-03-01 日商新力股份有限公司 成像元件、堆疊型成像元件、固態成像裝置及用於固態成像裝置之驅動方法
JP6780421B2 (ja) 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP2018060910A (ja) * 2016-10-05 2018-04-12 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
WO2018110636A1 (en) 2016-12-14 2018-06-21 Sony Semiconductor Solutions Corporation Solid-state imaging device and method for producing the same, and electronic device
JP7013209B2 (ja) 2016-12-14 2022-01-31 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器

Also Published As

Publication number Publication date
US20210273006A1 (en) 2021-09-02
JPWO2020017305A1 (ja) 2021-08-02
TW202013695A (zh) 2020-04-01
JP7433231B2 (ja) 2024-02-19
CN112385042B (zh) 2024-07-19
US12040340B2 (en) 2024-07-16
DE112019003626T5 (de) 2021-05-27
WO2020017305A1 (ja) 2020-01-23
CN112385042A (zh) 2021-02-19

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