ZA200807182B - Pulsed growth of gan nanowires and applications in group III nitride semiconductor substrate materials and devices - Google Patents

Pulsed growth of gan nanowires and applications in group III nitride semiconductor substrate materials and devices

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Publication number
ZA200807182B
ZA200807182B ZA200807182A ZA200807182A ZA200807182B ZA 200807182 B ZA200807182 B ZA 200807182B ZA 200807182 A ZA200807182 A ZA 200807182A ZA 200807182 A ZA200807182 A ZA 200807182A ZA 200807182 B ZA200807182 B ZA 200807182B
Authority
ZA
South Africa
Prior art keywords
applications
devices
semiconductor substrate
nitride semiconductor
group iii
Prior art date
Application number
ZA200807182A
Other languages
English (en)
Inventor
Stephen M Hersee
Wang Xin
Sun Xinyu
Original Assignee
Stc Unm Res & Technology Law
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stc Unm Res & Technology Law filed Critical Stc Unm Res & Technology Law
Publication of ZA200807182B publication Critical patent/ZA200807182B/xx

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ZA200807182A 2006-03-10 2008-08-20 Pulsed growth of gan nanowires and applications in group III nitride semiconductor substrate materials and devices ZA200807182B (en)

Applications Claiming Priority (1)

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US78083306P 2006-03-10 2006-03-10

Publications (1)

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ZA200807182B true ZA200807182B (en) 2009-08-26

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ZA200807182A ZA200807182B (en) 2006-03-10 2008-08-20 Pulsed growth of gan nanowires and applications in group III nitride semiconductor substrate materials and devices

Country Status (2)

Country Link
CN (1) CN101443887B (zh)
ZA (1) ZA200807182B (zh)

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CN113035979B (zh) * 2021-03-09 2022-08-19 南京大学 用于太阳能热光伏电池的吸收-辐射器结构的制备方法
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CN101443887A (zh) 2009-05-27
CN101443887B (zh) 2011-04-20

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