WO2025190043A1 - 基片清洗装置及方法 - Google Patents

基片清洗装置及方法

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Publication number
WO2025190043A1
WO2025190043A1 PCT/CN2025/077766 CN2025077766W WO2025190043A1 WO 2025190043 A1 WO2025190043 A1 WO 2025190043A1 CN 2025077766 W CN2025077766 W CN 2025077766W WO 2025190043 A1 WO2025190043 A1 WO 2025190043A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning
substrate
liquid
liquid collection
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/077766
Other languages
English (en)
French (fr)
Inventor
刘鑫
唐成吉
仲召明
贾社娜
王晖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACM Research Shanghai Inc
Original Assignee
ACM Research Shanghai Inc
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Filing date
Publication date
Application filed by ACM Research Shanghai Inc filed Critical ACM Research Shanghai Inc
Publication of WO2025190043A1 publication Critical patent/WO2025190043A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • the present application relates to the field of semiconductor equipment technology, and in particular to a substrate cleaning device and method.
  • Tank cleaning equipment is used for batch wafer wet cleaning with high production efficiency, while single-wafer cleaning equipment is used for single wafer wet cleaning with high cleaning quality.
  • the cleaning control of the existing single-wafer cleaning device is a single control.
  • the same cleaning parameters are used for cleaning substrates with different degrees of contamination.
  • the cleaning liquid consumed by substrates with relatively more contaminants and substrates with relatively less contaminants is the same.
  • Cleaning parameters are usually set based on substrates with relatively more contaminants. Therefore, there will be problems of over-cleaning and waste of cleaning liquid for substrates with relatively less contaminants.
  • the technical problem to be solved by the present invention is to overcome the above-mentioned defects and provide a substrate cleaning device and method.
  • a substrate cleaning device comprising:
  • the cleaning unit comprising a rotating carrier and a cleaning nozzle, the rotating carrier being used to carry the substrate and drive the substrate to rotate, the cleaning nozzle being used to spray a cleaning liquid onto the substrate to clean the substrate;
  • the liquid collecting unit is configured to: collect the cleaning liquid on the substrate in real time during the substrate cleaning process;
  • a detection unit configured to receive the cleaning liquid obtained by the liquid collection unit and detect the cleanliness of the cleaning liquid
  • a control unit is communicatively connected to the detection unit, and the control unit is used to control cleaning parameters according to the cleanliness of the cleaning fluid.
  • the cleanliness of the cleaning liquid obtained by the liquid collection unit can accurately reflect the current contamination level of the substrate.
  • the detection unit can detect the cleanliness of the cleaning liquid obtained by the liquid collection unit, and the control unit controls the cleaning parameters according to the cleanliness detected by the detection unit.
  • the substrate cleaning device provided by this embodiment can more accurately detect the current contamination level of the substrate, so that intelligent cleaning can be performed based on the current contamination level of the substrate. For example, if the contamination level of the substrate is high, the cleaning parameters can be increased; if the contamination level of the substrate is low, the cleaning parameters can be reduced. This ensures the quality of substrate cleaning while reducing the waste of cleaning liquid.
  • a substrate cleaning method comprising:
  • the cleaning parameters of the current substrate are controlled according to the cleanliness of the cleaning liquid.
  • the cleanliness of the cleaning liquid can reflect the contamination level of the substrate, and then the contamination level of the current substrate can be detected in real time, so that intelligent cleaning can be performed according to the contamination level of the current substrate, while ensuring the cleaning quality of the substrate, it can also reduce the waste of cleaning liquid.
  • FIG1 is a schematic diagram of a substrate cleaning device according to Example 1 of the present invention.
  • FIG2 is a schematic diagram of a substrate cleaning device according to Example 2 of the present invention.
  • FIG3 is a schematic diagram of a substrate cleaning device according to Example 3 of the present invention.
  • FIG4 is a schematic diagram of a substrate cleaning device according to Embodiment 4 of the present invention.
  • FIG5 is a flow chart of a substrate cleaning method according to embodiment 5 of the present invention.
  • this embodiment provides a substrate cleaning device, including a cleaning chamber 100, a cleaning unit, a liquid collection unit 140, a detection unit 200, and a control unit 300.
  • the cleaning unit and the liquid collection unit 140 are both arranged in the cleaning chamber 100.
  • the cleaning unit includes a rotating carrier 110 and a cleaning nozzle 130, wherein the rotating carrier 110 is used to carry the substrate W and drive the substrate W to rotate, and the cleaning nozzle 130 is used to spray cleaning liquid onto the substrate W to clean the substrate W.
  • the liquid collection unit 140 is configured to: obtain the cleaning liquid on the substrate W in real time during the cleaning process of the substrate W.
  • the detection unit 200 is used to receive the cleaning liquid obtained by the liquid collection unit 140 and detect the cleanliness of the cleaning liquid.
  • the control unit 300 is communicatively connected to the detection unit 200, and the control unit 300 is used to control the cleaning parameters according to the cleanliness of the cleaning liquid.
  • the cleaning parameters include any one or more of the cleaning time, cleaning pressure, cleaning flow rate, and the rotation speed of the rotating carrier 110.
  • the substrate cleaning device provided in this embodiment is a single-wafer cleaning device.
  • a drain pipe 150 is provided at the bottom of the cleaning chamber 100, and the cleaning liquid after cleaning the substrate W is discharged through the drain pipe 150.
  • the cleaning liquid discharged by the drain pipe 150 has a hysteresis, and may contain residual cleaning liquid from the previous substrate W. If the liquid is directly taken from the drain pipe 150 for cleanliness analysis, it cannot accurately reflect the contamination level of the current substrate W.
  • the cleaning liquid on the substrate W is obtained in real time. The cleanliness of the cleaning liquid obtained by the liquid collection unit 140 can more accurately reflect the contamination level of the current substrate W.
  • the cleanliness of the cleaning liquid obtained by the liquid collection unit 140 can be detected by the detection unit 200, and the control unit 300 controls the cleaning parameters according to the cleanliness detected by the detection unit 200.
  • the substrate cleaning device provided in this embodiment can more accurately detect the contamination level of the current substrate, so that it can perform intelligent cleaning according to the contamination level of the current substrate W. For example, if the contamination level of the substrate W is high, the cleaning parameters can be increased (for example, the cleaning flow, cleaning pressure, and cleaning time can be increased); if the contamination level of the substrate W is low, the cleaning parameters can be reduced (for example, the cleaning flow, cleaning pressure, and cleaning time can be reduced), thereby ensuring the cleaning quality of the substrate W while reducing the waste of cleaning liquid.
  • the liquid collection unit 140 is a liquid collection device, such as a vacuum nozzle device, which draws liquid by generating negative pressure and is disposed above the edge region of the substrate W. This device can draw the cleaning liquid from the surface of the substrate W in a non-contact manner, thereby minimizing damage to the substrate W.
  • the liquid collection device can also use a suction head connected to a pump via a pipeline to collect liquid.
  • the detection unit 200 is a particle counter. This is an existing device.
  • the particle counter's liquid inlet is connected to the liquid collection unit 140 , its liquid outlet is connected to the liquid discharge line 150 , and its signal output is connected to the control unit 300 .
  • the particle counter converts particle counts into electrical signals and transmits them to the control unit 300 .
  • the particle counter can be used to determine the particle count in the cleaning fluid, which in turn reflects the cleanliness of the cleaning fluid.
  • the detection unit 200 may also adopt other devices capable of detecting the cleanliness of the cleaning fluid, such as a reflective sensor, an electrical property monitoring device, etc.
  • control unit 300 is controlled by a processor, such as a PLC controller, a single chip microcomputer controller, etc.
  • the substrate cleaning device also includes a liquid supply pipeline 400, a regulating valve 410 and a pump 500.
  • One end of the liquid supply pipeline 400 is connected to the cleaning nozzle 130, and the other end of the liquid supply pipeline 400 is connected to the pump 500.
  • a regulating valve 410 is provided on the liquid supply pipeline 400.
  • the control unit 300 is communicated with the pump 500 and the regulating valve 410.
  • the control unit 300 controls the cleaning parameters by controlling the output power of the pump 500 and the opening of the regulating valve 410.
  • the substrate cleaning apparatus further includes a pressure sensor 420 and a flow sensor 430, each disposed on the liquid supply line 400.
  • the pressure sensor 420 is communicatively connected to the control unit 300 and is used to detect the cleaning pressure of the cleaning liquid in the liquid supply line 400.
  • the flow sensor 430 is communicatively connected to the control unit 300 and is used to detect the cleaning flow rate of the cleaning liquid in the liquid supply line 400.
  • only the pressure sensor 420 or the flow sensor 430 may be provided as needed.
  • the substrate cleaning apparatus further includes a cleaning brush (not shown) for scrubbing the surface of the substrate.
  • the control unit 300 is also in communication with the rotating carrier 110 to control the rotation speed of the rotating carrier 110. When a high degree of contamination of the substrate W is detected, the cleaning capability of the substrate W can be improved by increasing the rotation speed of the rotating carrier 110.
  • the communication connection in this embodiment can be in a wired or wireless manner.
  • the substrate cleaning device in this embodiment is basically the same as the scheme in Example 1, the difference being that the structure of the liquid collection unit is different.
  • the cleaning unit in this embodiment further includes a protective cover 120.
  • the liquid collection unit includes a liquid collection chamber 160.
  • the protective cover 120 is arranged on the periphery of the rotating carrier 110, and the liquid collection chamber 160 is arranged on the periphery of the protective cover 120.
  • a liquid collection hole 161 is provided at the bottom of the liquid collection chamber 160, and an opening 121 connected to the liquid collection chamber 160 is provided on the protective cover 120.
  • the opening 121 is configured as follows: when cleaning the substrate W, the opening 121 is used to allow the cleaning liquid thrown off the substrate W to enter the liquid collection chamber 160 through the opening 121.
  • the detection unit 200 is connected to the liquid collection hole 161, and is used to receive the cleaning liquid in the liquid collection chamber 160 and detect the cleanliness of the cleaning liquid.
  • the rotating carrier 110 rotates the substrate W, and the cleaning nozzle 130 sprays cleaning liquid onto the substrate W, cleaning the substrate W.
  • the cleaning liquid is then ejected in all directions by centrifugal force.
  • a protective cover 120 is disposed on the periphery of the rotating carrier 110 to prevent corrosion of the cleaning liquid on components outside the protective cover 120.
  • the protective cover 120 is provided with an opening 121 that communicates with the liquid extraction chamber 160.
  • a large amount of cleaning liquid is discharged from the drain line 150 at the bottom of the cleaning chamber 100, and a small amount of cleaning liquid enters the liquid extraction chamber 160 through the opening 121.
  • the amount of cleaning liquid entering the liquid collection chamber 160 is small, and the discharge speed is fast, so it is not easy to have residue.
  • the processing liquid in the liquid collection chamber 160 can be quickly emptied.
  • the next substrate W is cleaned, it is not easy for the cleaning liquid of the previous substrate W to remain in the liquid collection chamber 160, thereby improving the accuracy of the cleanliness detection of the next substrate W.
  • a cleaning device (not shown), such as a cleaning nozzle, is further provided in the liquid extraction chamber 160 to clean the residual cleaning liquid in the liquid extraction chamber 160.
  • the liquid extraction chamber 160 can be cleaned during the replacement of the substrate W to remove the residual cleaning liquid in the cleaning chamber 160 to ensure the accuracy of the cleanliness test of the next substrate W.
  • liquid extraction cavity 160 completely surrounds the protection cover 120 .
  • the liquid extraction chamber 160 may also partially surround the protective cover 120 , so that the volume of the liquid extraction chamber 160 is smaller and the amount of cleaning liquid entering the liquid extraction chamber 160 is correspondingly reduced, so that the cleaning liquid can be discharged from the liquid extraction chamber 160 faster.
  • This embodiment is basically the same as the solution of Example 2, except that, as shown in FIG3 , there is a drainage slope at the bottom of the liquid collection chamber 160, so that the bottom of the liquid collection chamber 160 has a lowest part, and the liquid collection hole 161 is arranged at the lowest part of the liquid collection chamber 160, which is conducive to accelerating the discharge of the cleaning liquid.
  • the bottom of the liquid extraction chamber 160 includes a groove 162 , the opening diameter of the groove 162 decreases from top to bottom to form a drainage slope, the bottom of the groove 162 is the lowest part of the liquid extraction chamber 160 , and the liquid extraction hole 161 is arranged at the lowest point of the groove 162 .
  • This embodiment is basically the same as the solution of Example 2, the difference being that, as shown in Figure 4, no protective cover is provided in this embodiment, and the liquid collection chamber 160 is provided on the periphery of the rotating carrier 110.
  • the liquid collection chamber 160 is configured as follows: during the cleaning process of the substrate W, the liquid collection chamber 160 is used to allow the cleaning liquid thrown off the substrate W to enter the liquid collection chamber 160.
  • the liquid extraction chamber 160 is provided with a liquid inlet hole 163 , and the cleaning liquid ejected from the substrate W enters the liquid extraction chamber 160 through the liquid inlet hole 163 .
  • the top of the liquid collection chamber 160 is open and is lower than the substrate W on the rotating carrier 110 , and the cleaning liquid thrown off the substrate W enters the liquid collection chamber 160 through the top of the liquid collection chamber 160 .
  • this embodiment provides a substrate cleaning method, which includes:
  • the cleanliness of the cleaning liquid can reflect the contamination level of the substrate, and then the contamination level of the current substrate can be detected in real time, so that intelligent cleaning can be performed according to the contamination level of the current substrate, while ensuring the cleaning quality of the substrate and reducing the waste of cleaning liquid.

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本发明公开了一种基片清洗装置及方法，涉及半导体设备技术领域，一种基片清洗装置，包括：清洗单元，所述清洗单元包括旋转载具和清洗喷嘴，所述旋转载具用于承载基片并带动所述基片旋转，所述清洗喷嘴用于向基片喷射清洗液，以对基片进行清洗；取液单元，被配置为：在基片清洗过程中，实时地获取所述基片上的清洗液；检测单元，用于接收所述取液单元获取的所述清洗液，并检测所述清洗液的洁净度；控制单元，与所述检测单元通信连接，所述控制单元用于根据所述清洗液的洁净度控制清洗参数。本发明能够更为精确地检测当前基片的污染程度，并对不同污染程度的基片进行智能化清洗，在保证基片的清洗质量的同时还能够减少清洗液的浪费。

Description

基片清洗装置及方法 技术领域
本申请涉及半导体设备技术领域，具体涉及一种基片清洗装置及方法。
背景技术
半导体清洗是贯穿整个晶圆制造过程的重要工艺环节，现在的半导体清洗装置分为两种，槽式清洗装置和单片式清洗装置，槽式清洗装置用于批量式晶圆湿法清洗，生产效率高，单片式清洗装置用于单片晶圆湿法清洗，清洗质量高。
现有的单片式清洗装置的清洗控制是单一化控制的，对于不同污染程度的基片均采用了相同的清洗参数进行清洗，污染物相对较多的基片与污染物相对较少的基片所消耗的清洗液是相同的，通常会以污染物相对较多的基片为基准设置清洗参数，因此对于污染物相对较少的基片会存在过度清洗、浪费清洗液的问题。
发明内容
本发明要解决的技术问题是为了克服上述的缺陷，提供一种基片清洗装置及方法。
本发明是通过下述技术方案来解决上述技术问题：
一种基片清洗装置，包括：
清洗单元，所述清洗单元包括旋转载具和清洗喷嘴，所述旋转载具用于承载基片并带动所述基片旋转，所述清洗喷嘴用于向基片喷射清洗液，以对基片进行清洗；
取液单元，被配置为：在基片清洗过程中，实时地获取所述基片上的清洗液；
检测单元，用于接收所述取液单元获取的所述清洗液，并检测所述清洗液的洁净度；
控制单元，与所述检测单元通信连接，所述控制单元用于根据所述清洗液的洁净度控制清洗参数。
在本方案中，通过增加取液单元实时地获取基片上的清洗液，取液单元所获取的清洗液的洁净度能够准确的反映当前基片的污染程度。通过检测单元能够检测取液单元所获取的清洗液的洁净度，控制单元根据检测单元所检测的洁净度控制清洗参数。本实施例提供的基片清洗装置能够更为精确地检测当前基片的污染程度，从而能够根据当前基片的污染程度进行智能化清洗，如：基片的污染程度高，则可以提高清洗参数；基片的污染程度低，则可以降低清洗参数，在保证基片清洗质量的同时还能够减少清洗液的浪费。
一种基片清洗方法，包括：
控制基片进行旋转并向所述基片喷洒清洗液进行清洗；
实时获取当前基片上的清洗液；
检测所述清洗液的洁净度；
根据所述清洗液的洁净度控制当前基片的清洗参数。
在本方案中，通过实时获取当前基片上的清洗液，清洗液的洁净度能够反映基片的污染程度，进而能够实时的检测当前基片的污染程度，从而能够针对当前基片的污染程度进行智能化清洗，在保证基片的清洗质量的同时还能够减少清洗液的浪费。
附图概述
本申请的特征、性能由以下的实施例及其附图进一步描述。
图1为本发明实施例1的基片清洗装置的示意图；
图2为本发明实施例2的基片清洗装置的示意图；
图3为本发明实施例3的基片清洗装置的示意图；
图4为本发明实施例4的基片清洗装置的示意图；以及
图5为本发明实施例5的基片清洗方法的流程图。
本申请的较佳实施方式
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在的实施例范围之中。
实施例1
如图1所示，本实施例提供了一种基片清洗装置，包括清洗腔100、清洗单元、取液单元140、检测单元200和控制单元300。清洗单元和取液单元140均设置于清洗腔100内。清洗单元包括旋转载具110和清洗喷嘴130，其中，旋转载具110用于承载基片W并带动基片W旋转，清洗喷嘴130用于向基片W喷射清洗液，以对基片W进行清洗。取液单元140被配置为：在基片W清洗过程中，实时地获取基片W上的清洗液。检测单元200用于接收取液单元140获取的清洗液，并检测清洗液的洁净度。控制单元300与检测单元200通信连接，控制单元300用于根据清洗液的洁净度控制清洗参数。其中，清洗参数包括清洗时间、清洗压力、清洗流量和旋转载具110的旋转速度其中的任意一个或多个。
本实施例提供的基片清洗装置为单片式清洗，清洗腔100的底部设置有排液管路150，对基片W清洗后的清洗液通过排液管路150排出。排液管路150排出的清洗液存在滞后性，可能残留有上一基片W清洗后的清洗液，如果直接从排液管路150取液进行洁净度分析，无法准确反映出当前基片W的污染程度。本实施例通过增加取液单元140实时地获取基片W上的清洗液，取液单元140所获取的清洗液的洁净度能够更为准确地反映当前基片W的污染程度。通过检测单元200能够检测取液单元140所获取的清洗液的洁净度，控制单元300根据检测单元200所检测的洁净度控制清洗参数。本实施例提供的基片清洗装置能够更为精确地检测当前基片的污染程度，从而能够根据当前基片W的污染程度进行智能化清洗，如：基片W的污染程度高，则可以提高清洗参数(例如提高清洗流量、清洗压力、清洗时间)；基片W的污染程度低，则可以降低清洗参数(例如降低清洗流量、清洗压力、清洗时间)，在保证基片W的清洗质量的同时还能够减少清洗液的浪费。
具体地，在本实施例中，取液单元140为取液器，如真空吸嘴装置，通过产生负压来取液，设置于基片W边缘区域的上方位置。能够通过非接触式的方式吸取基片W表面的清洗液，不易对基片W造成损伤。在一些实施例中，取液器也可以采用吸头并通过管路与泵连接，来进行取液。
检测单元200采用为颗粒计数器。颗粒计数器为现有的装置。颗粒计数器的进液口与取液单元140连接，颗粒计数器的出液口与排液管路150连接，颗粒计数器的信号输出端与控制单元300连接，颗粒计数器能够将颗粒数转化为电信号传输至控制单元300。通过颗粒计数器能够获取清洗液的颗粒数，通过颗粒数能够反映清洗液的洁净度。
在一些实施例中，检测单元200还可以采用其他能够检测清洗液的洁净度的装置，如反射型感测器、电性质监测装置等。
在本实施例中，控制单元300采用处理器来进行控制，如PLC控制器、单片机控制器等。
在本实施例中，基片清洗装置还包括供液管路400、调节阀410和泵500，供液管路400的一端与清洗喷嘴130连接，供液管路400的另一端与泵500连接，供液管路400上设置有调节阀410，控制单元300与泵500和调节阀410通信连接，控制单元300通过控制泵500的输出功率和调节阀410的开度来控制清洗参数。
在本实施例中，基片清洗装置还包括压力传感器420和流量传感器430，分别设置于供液管路400上。压力传感器420与控制单元300通信连接，压力传感器420用于检测供液管路400内清洗液的清洗压力。流量传感器430与控制单元300通信连接，流量传感器430用于检测供液管路400内清洗液的清洗流量。
在一些实施例中，可以根据需要仅设置压力传感器420或流量传感器430。
在本实施例中，基片清洗装置还包括清洗刷(图中未示出)，清洗刷用于对基片的表面进行刷洗，控制单元300还与旋转载具110通信连接，以控制旋转载具110的旋转速度。当检测到基片W的污染程度较高时，可以通过提高旋转载具110的旋转速度，来提高对基片W的清洁能力。
本实施例中的通信连接可以采用有线或者无线的方式。
实施例2
本实施例中的基片清洗装置与实施例1中的方案基本相同，其不同之处在于，取液单元的结构不同。如图2所示，本实施例中的清洗单元还包括保护罩120。取液单元包括取液腔160。保护罩120设置于旋转载具110的外周，取液腔160设置于保护罩120的外周，取液腔160的底部设置有取液孔161，保护罩120上设置有与取液腔160连通的开孔121，开孔121被配置为：在清洗基片W时，开孔121用于使从基片W上甩出的清洗液通过开孔121进入到取液腔160。检测单元200与取液孔161连接，用于接收取液腔160内的清洗液，并检测清洗液的洁净度。
旋转载具110带动基片W旋转，清洗喷嘴130向基片W喷射清洗液，对基片W进行清洗，清洗液在离心力的作用下向四周甩出。保护罩120设置于旋转载具110的外周，能够避免清洗液对保护罩120外部的部件造成腐蚀。保护罩120上设置有与取液腔160连通的开孔121，大量的清洗液从清洗腔100底部的排液管路150排出，少量的清洗液会通过开孔121进入到取液腔160内。进入到取液腔160内的清洗液较少，排出速度较快，不易存在残留，在基片W的清洗过程中，能够快速的从取液孔161排入至检测单元200，基片清洗结束后，取液腔160内的处理液能够快速排空，在下一基片W清洗时，取液腔160内不易残留上一基片W的清洗液，从而提高下一基片W洁净度检测的准确性。
在一些实施例中，取液腔160内还设置有清洗器(图中未示出)，如清洗喷头，用于清洗取液腔160内残留的清洗液。具体地，可以在基片W更换期间，对取液腔160进行清洗，去除清洗腔160内残留的清洗液，以保证下一基片W洁净度检测的准确性。
在本实施例中，取液腔160完全环绕保护罩120。
在一些实施例中，取液腔160也可以部分环绕保护罩120，取液腔160的体积更小，进入到取液腔160内的清洗液也相应减少，因此清洗液能够更快地从取液腔160内排出。
实施例3
本实施例与实施例2的方案基本相同，其不同之处在于，如图3所示，取液腔160的底部存在排水坡度，使取液腔160的底部具有最低部，取液孔161设置于取液腔160的最低部，有利于加快清洗液的排出。
具体地，取液腔160的底部包括凹槽162，凹槽162的开口直径由上向下减小以形成排水坡度，凹槽162的底部是取液腔160的最低部，取液孔161设置于凹槽162的最低点。
实施例4
本实施例与实施例2的方案基本相同，其不同之处在于，如图4所示，本实施例中没有设置保护罩，取液腔160设置于旋转载具110的外周，取液腔160被配置为：在基片W清洗过程中，取液腔160用于使从基片W上甩出的清洗液进入到取液腔160内。
在本实施例中，取液腔160设置有进液孔163，从基片W上甩出的清洗液通过进液孔163进入到取液腔160。
在一些实施例中，取液腔160的顶部敞开，并且取液腔160的顶部低于旋转载具110上的基片W，从基片W上甩出的清洗液通过取液腔160的顶部进入到取液腔160。
实施例5
如图5所示，本实施例提供了一种基片的清洗方法，其包括：
S10、控制基片进行旋转并向基片喷洒清洗液进行清洗。
S20、实时获取当前基片上的清洗液。
S30、检测清洗液的洁净度。
S40、根据清洗液的洁净度控制当前基片的清洗参数。
通过实时获取当前基片上的清洗液，清洗液的洁净度能够反映基片的污染程度，进而能够实时的检测当前基片的污染程度，从而能够针对当前基片的污染程度进行智能化清洗，在保证基片的清洗质量的同时还能够减少清洗液的浪费。
虽然以上描述了本发明的具体实施方式，但是本领域的技术人员应当理解，这仅是举例说明，本发明的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本发明的原理和实质的前提下，可以对这些实施方式做出多种变更或修改，但这些变更和修改均落入本发明的保护范围。

Claims (13)

  1. 一种基片清洗装置，其特征在于，包括：
    清洗单元，所述清洗单元包括旋转载具和清洗喷嘴，所述旋转载具用于承载基片并带动所述基片旋转，所述清洗喷嘴用于向基片喷射清洗液，以对基片进行清洗；
    取液单元，被配置为：在基片清洗过程中，实时地获取所述基片上的清洗液；
    检测单元，用于接收所述取液单元获取的所述清洗液，并检测所述清洗液的洁净度；
    控制单元，与所述检测单元通信连接，所述控制单元用于根据所述清洗液的洁净度控制清洗参数。
  2. 如权利要求1所述的基片清洗装置，其特征在于，所述清洗参数包括清洗时间、清洗压力、清洗流量和所述旋转载具的旋转速度中的任意一个或多个。
  3. 如权利要求2所述的基片清洗装置，其特征在于，还包括供液管路、调节阀和泵，所述供液管路的一端与所述清洗喷嘴连接，所述供液管路的另一端与所述泵连接，所述调节阀设置于所述供液管路上；
    所述控制单元与所述泵和/或所述调节阀通信连接，所述控制单元通过控制所述泵的输出功率和/或所述调节阀的开度来控制所述清洗参数。
  4. 如权利要求3所述的基片清洗装置，其特征在于，还包括：
    压力传感器，设置于所述供液管路上，所述压力传感器与所述控制单元通信连接，所述压力传感器用于检测所述供液管路内清洗液的清洗压力，和/或，
    流量传感器，设置于所述供液管路上，所述流量传感器与所述控制单元通信连接，所述流量传感器用于检测所述供液管路内清洗液的清洗流量。
  5. 如权利要求2所述的基片清洗装置，其特征在于，所述基片清洗装置还包括清洗刷，所述清洗刷用于对所述基片的表面进行刷洗。
  6. 如权利要求1所述的基片清洗装置，其特征在于，所述检测单元为颗粒计数器。
  7. 如权利要求1所述的基片清洗装置，其特征在于，所述取液单元为取液器，所述取液器靠近所述基片的上表面设置。
  8. 如权利要求1所述的基片清洗装置，其特征在于，
    所述取液单元包括取液腔，设置于所述旋转载具的外周，所述取液腔的底部设置有取液孔，所述取液腔被配置为：在基片清洗过程中，所述取液腔用于使从所述基片上甩出的清洗液进入到所述取液腔内；
    所述检测单元与所述取液孔连接。
  9. 如权利要求8所述的基片清洗装置，其特征在于，还包括清洗器，设置于所述取液腔内，用于清洗所述取液腔内残留的清洗液。
  10. 如权利要求8所述的基片清洗装置，其特征在于，所述取液腔的底部设置有排水坡度，使所述取液腔的底部具有最低部，所述取液孔设置于所述最低部。
  11. 如权利要求10所述的基片清洗装置，其特征在于，所述取液腔的底部包括凹槽，所述凹槽的开口直径由上向下减小以形成所述排水坡度，所述凹槽的底部是所述最低部。
  12. 如权利要求8所述的基片清洗装置，其特征在于，所述清洗单元还包括保护罩，所述保护罩设置于所述旋转载具的外周，所述取液腔设置于所述保护罩的外周，所述保护罩上设置有与所述取液腔连通的开孔，所述开孔被配置为：在基片清洗过程中，所述开孔用于使从所述基片上甩出的清洗液通过所述开孔进入到所述取液腔。
  13. 一种基片清洗方法，其特征在于，其包括：
    控制基片进行旋转并向所述基片喷洒清洗液进行清洗；
    实时获取当前基片上的清洗液；
    检测所述清洗液的洁净度；
    根据所述清洗液的洁净度控制当前基片的清洗参数。
PCT/CN2025/077766 2024-03-14 2025-02-18 基片清洗装置及方法 Pending WO2025190043A1 (zh)

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Publication number Priority date Publication date Assignee Title
JP2000223394A (ja) * 1999-01-29 2000-08-11 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
JP2006261393A (ja) * 2005-03-17 2006-09-28 Seiko Epson Corp 基板の洗浄装置および洗浄方法
CN107086188A (zh) * 2016-09-09 2017-08-22 深圳市新纶科技股份有限公司 一种晶元清洗装置
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