WO2025130673A1 - 匀流组件、进气装置及半导体设备 - Google Patents

匀流组件、进气装置及半导体设备 Download PDF

Info

Publication number
WO2025130673A1
WO2025130673A1 PCT/CN2024/137732 CN2024137732W WO2025130673A1 WO 2025130673 A1 WO2025130673 A1 WO 2025130673A1 CN 2024137732 W CN2024137732 W CN 2024137732W WO 2025130673 A1 WO2025130673 A1 WO 2025130673A1
Authority
WO
WIPO (PCT)
Prior art keywords
flow
air
air intake
pipe
uniform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/137732
Other languages
English (en)
French (fr)
Inventor
兰立广
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of WO2025130673A1 publication Critical patent/WO2025130673A1/zh
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Definitions

  • a flow plate is used to improve gas uniformity.
  • a base 11 ' is provided in a process chamber 10 ' of a semiconductor device 100 ', and the base 11 ' is used to carry a wafer 200.
  • the gas inlet device of the semiconductor device 100 ' comprises an inlet flow channel 21 ' and a flow plate 31 ' provided in the process chamber 10 '.
  • the process gas is transported to the process chamber 10 ' via the inlet flow channel 21 '.
  • the present application aims to solve at least one of the technical problems existing in the prior art, and proposes a flow-uniforming component, an air intake device and a semiconductor device.
  • the channel inside the air inlet pipe passes through the corresponding second end of the air inlet pipe, and the second end of the air inlet pipe is close to the bottom wall and forms a first gap with the bottom wall; and/or, the channel inside the air outlet pipe passes through the corresponding second end of the air outlet pipe, and the second end of the air outlet pipe is close to the top wall and forms a second gap with the top wall.
  • the dimensions of the first gap and the second gap in the axial direction of the uniform flow chamber are both greater than or equal to 0.1 mm and less than or equal to one half of the height of the uniform flow chamber.
  • the top wall is provided with a plurality of rows of air inlets spaced in sequence along a first radial direction of the uniform flow cavity, and each row of air inlets includes a plurality of air inlets spaced in sequence along a second radial direction of the uniform flow cavity; or, the top wall is provided with a plurality of circles of air inlets spaced in sequence along a radial direction of the uniform flow cavity, and the aperture of each circle of air inlets gradually increases from the center to the edge of the top wall, and the number of air inlets in each circle gradually increases;
  • the air inlet and the air outlet are staggered with each other in the first radial direction and the second radial direction; wherein the first radial direction, the second radial direction and the axial direction of the flow-uniform chamber are perpendicular to each other.
  • the orthographic projections of all the gas outlets on the uniform flow chamber on the supporting surface of the base of the semiconductor device exceed the edge of the wafer supported by the supporting surface.
  • the present application provides an intake device, comprising: one or a plurality of stacked and spaced uniform flow components and at least one first total intake pipe;
  • the uniform flow component is any one of the uniform flow components provided in the first aspect of the present application, and when the intake device comprises one uniform flow component, the outlet of the first total intake pipe is located on the intake side of the uniform flow component; when the intake device comprises a plurality of uniform flow components, the outlet of the first total intake pipe is located on the intake side of the first uniform flow component stacked from top to bottom along the axial direction of the uniform flow chamber.
  • the air intake device when the air intake device includes a plurality of the flow equalizer components, the air intake device further includes: a connecting ring disposed between any two adjacent flow equalizer components and connected to the two adjacent flow equalizer components, the connecting ring and the two adjacent flow equalizer components together enclosing an air intake space.
  • Each of the air intake spaces is connected to at least one of the second main air intake pipes; the second main air intake pipe corresponding to the air intake space passes through other uniform flow components located above the air intake space and enters the corresponding air intake space.
  • each of the air intake spaces corresponds to one of the second main air intake pipes.
  • the air intake space is one, and the number of the connecting pipes is the same as the number of the air outlets of the first flow-leveling components;
  • the connecting pipe runs through the air inlet space and the second flow equalizer, and the air inlet end of the connecting pipe is connected to the air outlet of the first flow equalizer, and the air outlet end of the connecting pipe is exposed to the air outlet side of the second flow equalizer.
  • the outlet end of the first main air inlet pipe is connected to a first cover plate, the first cover plate covers the port of the outlet end of the first main air inlet pipe, a plurality of outlets are distributed on the first cover plate, and a plurality of outlets are circumferentially spaced on the pipe wall of the outlet end of the first main air inlet pipe.
  • the outlet end of the second main air intake pipe is connected to a second cover plate, the second cover plate covers the port of the outlet end of the second main air intake pipe, a plurality of openings are distributed on the second cover plate, and a plurality of openings are circumferentially spaced on the pipe wall of the outlet end of the second main air intake pipe.
  • the present application provides a semiconductor device, comprising: a process chamber and any one of the air intake devices provided in the second aspect of the present application, a base is provided inside the process chamber, and the base has a supporting surface for supporting a wafer; the flow equalizer is located in the process chamber, and the flow equalizer is opposite to the base; the air inlet end of the first main air inlet pipe is located outside the process chamber, and the air outlet end of the first main air inlet pipe is located inside the process chamber.
  • the semiconductor device also includes a support ring arranged inside the process chamber, and the support ring is fixedly connected to the inner wall of the process chamber; when the air intake device includes one flow equalizer component, the bottom of the flow equalizer component is fixedly arranged on the support ring; when the air intake device includes multiple flow equalizer components, the last flow equalizer component among the multiple flow equalizer components stacked from top to bottom along the axial direction of the flow equalizer chamber is the second flow equalizer component, and the bottom of the second flow equalizer component is fixedly arranged on the support ring.
  • At least one of the flow-uniforming components is grounded on the air intake device.
  • the uniform flow assembly provided in the present application is designed to have a uniform flow chamber inside, and an air inlet pipe and an air outlet pipe are arranged inside the uniform flow chamber.
  • the first end of the air inlet pipe is connected to the air inlet of the top wall of the uniform flow chamber, and the second end is communicated with the uniform flow chamber.
  • the first end of the air outlet pipe is connected to the air outlet of the bottom wall of the uniform flow chamber, and the second end is communicated with the uniform flow chamber, and the second end of the air inlet pipe is located below the second end of the air outlet pipe.
  • the process gas passes through the uniform flow component, it flows out from the second end of the air inlet pipe into the uniform flow chamber, and then flows into the air outlet pipe.
  • the process gas needs to change the flow direction, so that the pressure of the process gas in each part of the uniform flow chamber is consistent, that is, the air pressure balance can be achieved in the uniform flow chamber.
  • the apertures of each outlet are equal, the flow speed of the process gas ejected from each outlet is also consistent, so the gas ejection amount of each outlet is the same. In this way, the uniform flow effect is enhanced, and the uniformity of the distribution of the process gas is improved, which is conducive to improving the product yield.
  • FIG1 is a schematic cross-sectional view of a semiconductor device provided by some related technologies
  • FIGS. 2 and 3 are schematic diagrams of current distribution plates in semiconductor devices provided by other related technologies
  • FIG4 is a cross-sectional schematic diagram of a semiconductor device provided by some related technologies.
  • FIG5 is a schematic diagram of the structure of a semiconductor device provided in Embodiment 1 of the present application.
  • FIG6 is a schematic cross-sectional view of the semiconductor device shown in FIG5 along the A-A direction;
  • FIG7 is a schematic diagram of the three-dimensional structure of a current equalizing component in the semiconductor device shown in FIG5 ;
  • FIG8 is a side view of the flow-distributing assembly shown in FIG7 ;
  • FIG9 is a bottom view of the flow-distributing assembly shown in FIG7 ;
  • FIG10 is a schematic cross-sectional view of the flow-uniform assembly shown in FIG9 along the B-B direction;
  • FIG11 is a schematic diagram of the structure of the first main air intake pipe in the semiconductor device shown in FIG5;
  • FIG12 is a schematic diagram of the structure of a semiconductor device provided in Embodiment 3 of the present application.
  • FIG13 is a structure of another semiconductor device provided in Embodiment 4 of the present application.
  • FIG14 is a top view of the semiconductor device shown in FIG13;
  • FIG15 is a schematic cross-sectional view of the semiconductor device shown in FIG14 along the C-C direction;
  • FIG16 is a front view of an air intake device in the semiconductor device shown in FIG13;
  • Fig. 17 is a schematic cross-sectional view of the air intake device shown in Fig. 16 along the D-D direction;
  • Fig. 18 is a schematic cross-sectional view of the air intake device shown in Fig. 16 along the E-E direction;
  • FIG19 is a schematic cross-sectional view of the air intake device shown in FIG16 along the F-F direction;
  • Fig. 21 is a schematic cross-sectional view of the air intake device shown in Fig. 16 along the H-H direction;
  • Fig. 22 is a schematic cross-sectional view of the air intake device shown in Fig. 16 along the I-I direction;
  • Fig. 23 is a schematic cross-sectional view of the air intake device shown in Fig. 16 along the J-J direction;
  • 30-intake device 31-flow-uniform component; 31a-first flow-uniform component; 31b-second flow-uniform component; 311-flow-uniform cavity; 312-upper substrate; 3121-inlet; 313-lower substrate; 3131-outlet; 314-first structural ring; 315-second structural ring; 316-inlet pipe; 3161-first flow-uniform hole; 317-outlet pipe; 3171-second flow-uniform hole; 318-avoidance annular groove; 32-connecting ring; 33-inlet space; 34-connecting pipe; 35-second main inlet pipe; 351-second cover plate; 352-opening;
  • each circle of through holes 311' is distributed on the flow plate 31' and are arranged at intervals along the radial direction thereof, and each circle of through holes 311' is composed of a plurality of through holes 311' arranged at intervals along the circumference of the flow plate 31'. Moreover, from the center to the edge of the flow plate 31', the aperture of each circle of through holes 311' gradually increases, and the number of through holes 311' contained in each circle of through holes 311' gradually increases.
  • the gas ejection amount Q of a single through hole 311' is related to the flow velocity V of the process gas flowing through the through hole 311' and the flow cross-sectional area S of the through hole 311'.
  • the aperture of the through holes 311' closer to the edge of the flow plate 31' is set to be larger and the number is set to be more, so as to make the distribution density of the gas ejection amount Q through each through hole 311' almost the same, thereby improving the process uniformity, but the difference in the flow velocity V of the process gas flowing through each through hole 311' will cause the consistency of the process result to deteriorate.
  • the air intake device of the semiconductor device 100′ is further provided with a diffusion channel 41′.
  • the process gas ejected from the outflow end of the inlet flow channel 21′ is diffused through the diffusion channel 41′, and then flows into the process chamber 10′ through the through hole 311′ of the flow equalizer 31′.
  • an exemplary process is as follows: i) two dilution gases are introduced into the inlet flow channel 21'; ii) a first precursor and a dilution gas are introduced into the inlet flow channel 21'; iii) the first precursor is stopped from being introduced into the inlet flow channel 21', and the dilution gas is continued to be introduced into the inlet flow channel 21'; iv) a second precursor and a dilution gas are introduced into the inlet flow channel 21'; v) the second precursor is stopped from being introduced into the inlet flow channel 21', and the dilution gas is continued to be introduced into the inlet flow channel 21'; vi) step ii) to step v) are cyclically executed.
  • ALD atomic layer deposition
  • the first precursor and the second precursor are alternately introduced into the process chamber 10'.
  • the diffusion channel 41' is added in the related technology, the uniformity of the process gas distribution cannot be guaranteed, and it is not compatible and scalable for different process conditions. Therefore, the uniformity and consistency of the thin film prepared by using the semiconductor device 100' are poor, and the product yield is low.
  • the process gas introduced into the inlet flow channel 21' usually contains multiple gas components. For example, multiple gases are introduced simultaneously in the above step ii) and step iv). Since the density and flow rate settings of different gases are different, the diffusion efficiency and gas distribution of various gases are different. Gases with high density tend to concentrate in the central area of the diffusion channel 41' and are difficult to diffuse to the peripheral area of the diffusion channel 41', resulting in a higher concentration of the process gas reaching the center of the wafer and a lower concentration of the process gas reaching the edge of the wafer, thereby causing uneven distribution of the process gas. The uniformity of the process results is strongly correlated with the uniformity of the process gas distribution. Therefore, this will result in poor uniformity in the film preparation effect and affect the product yield.
  • the semiconductor device 100' shown in FIG4 when the semiconductor device 100' shown in FIG4 is used to implement a plasma etching process, plasma is introduced into the inlet flow channel 21', and the diffusion channel 41' has a poor effect on the diffusion of plasma to the edge of the uniform flow plate 31', resulting in more plasma reaching the center of the wafer and less plasma reaching the edge of the wafer, thereby affecting the uniformity and consistency of the etching effect.
  • the combination of the diffusion channel 41' and the uniform flow plate 31' cannot completely filter out the charged particles in the plasma, resulting in poor consistency of the free radical isotropic etching effect and affecting the product yield.
  • the two precursors share one inlet flow channel 21', the residual gases of the two precursors are prone to chemical vapor deposition (CVD) reaction in the inlet flow channel 21', resulting in the generation of reaction by-products on the flow channel wall of the inlet flow channel 21'.
  • CVD chemical vapor deposition
  • the reaction by-products are easily blown off by the process gas or naturally fall onto the wafer surface, resulting in an increase in the particle size of the film surface, affecting the film quality and product yield of the film.
  • reaction byproducts are easily generated on the flow channel wall of the inlet flow channel 21', this method still has many defects.
  • reaction by-products when the reaction by-products accumulate to a certain thickness, the reaction by-products will affect the flow cross-sectional area of the inlet flow channel 21'. Under the premise of a certain flow velocity, the amount of gas entering the process chamber 10' will decrease, the process efficiency will be reduced, and the product process consistency and equipment production capacity will be affected.
  • the cleaning cycle of the air intake device is shortened, which affects the life of the air intake device and the equipment utilization rate.
  • the embodiment of the present application provides a uniform flow assembly, an air intake device and a semiconductor device.
  • the uniform flow assembly, the air intake device and the semiconductor device provided by the present application are described in detail below in conjunction with the accompanying drawings.
  • the semiconductor device 100 provided in the embodiment of the present application includes a process chamber 10 and an air intake device 30.
  • a base 11 is provided inside the process chamber 10.
  • the base 11 has a carrying surface, and the carrying surface is used to carry a wafer 200 so that the wafer 200 can be processed in the process chamber 10.
  • the air intake device 30 is used to introduce process gas into the process chamber 10.
  • the air intake device 30 provided in this embodiment includes a first main air intake pipe 20 and a flow equalizer component 31, wherein the air intake end of the first main air intake pipe 20 is located outside the process chamber 10, the air outlet end of the first main air intake pipe 20 extends from the top of the process chamber 10 into the process chamber 10, and the air outlet end of the first main air intake pipe 20 is located on the air intake side of the flow equalizer component 31.
  • the flow equalizer 31 is opposite to the base 11 and can equalize the process gas flowing out of the outlet end of the first main air inlet pipe 20 so that the process gas is uniformly sprayed onto the surface of the wafer 200.
  • the structure of the flow equalizer 31 is first described in detail below.
  • a uniform flow component 31 provided in this embodiment has a uniform flow chamber 311 therein, a plurality of air inlets 3121 penetrating the top wall of the uniform flow chamber 311 along the thickness direction thereof are provided on the top wall, and a plurality of air outlets 3131 penetrating the bottom wall of the uniform flow chamber 311 along the thickness direction thereof are provided on the bottom wall.
  • the apertures of the air outlets 3131 are equal.
  • a plurality of air inlet pipes 316 and a plurality of air outlet pipes 317 are also provided inside the flow-uniforming chamber 311.
  • the air inlet pipe 316 and the air outlet pipe 317 both have two ends.
  • the "first end” of the air inlet pipe 316 and the "gas inflow end” of the air inlet pipe 316 can be used interchangeably
  • the "second end” of the air inlet pipe 316 and the “gas outflow end” of the air inlet pipe 316 can be used interchangeably
  • the "first end” of the air outlet pipe 317 and the "gas outflow end” of the air outlet pipe 317 can be used interchangeably
  • the "second end” of the air outlet pipe 317 and the "gas inflow end” of the air outlet pipe 317 can be used interchangeably.
  • the number of air inlet pipes 316 is equal to the number of air inlet ports 3121, and the multiple air inlet pipes 316 correspond one-to-one to the multiple air inlet ports 3121.
  • the gas inlet end of each air inlet pipe 316 is connected to the corresponding air inlet port 3121, and the gas outflow end is penetrated by the channel inside it, so that the gas outflow end of each air inlet pipe 316 is connected to the uniform flow chamber 311, and the gas outflow end of the air inlet pipe 316 is close to the bottom wall of the uniform flow chamber 311 and forms a first gap with the bottom wall.
  • each air inlet pipe 316 are the gas inlet end and the gas outflow end, respectively, and the air inlet pipe 316 has a channel connecting the gas inflow end and the gas outflow end, so that the process gas flows from the gas inflow end of the air inlet pipe 316 to the gas outflow end.
  • All the air inlet pipes 316 are located inside the uniform flow chamber 311, the gas inlet end of each air inlet pipe 316 is connected to the corresponding air inlet port 3121, and the gas outflow end of each air inlet pipe 316 is close to the bottom wall of the uniform flow chamber 311 and forms a first gap with the bottom wall, so that the gas outflow end of the air inlet pipe 316 is connected to the uniform flow chamber 311.
  • the number of outlet pipes 317 is equal to the number of outlet ports 3131, and multiple outlet pipes 317 correspond one-to-one to multiple outlet ports 3131.
  • the gas outflow end of each outlet pipe 317 is connected to the corresponding outlet port 3131, and the gas inflow end is penetrated by the channel inside it, so that the gas inflow end of each outlet pipe 317 is connected to the uniform flow chamber 311, and the gas inflow end of the outlet pipe 317 is close to the top wall of the uniform flow chamber 311 and forms a second gap with the top wall.
  • each outlet pipe 317 are the gas inflow end and the gas outflow end, respectively, and the outlet pipe 317 has a channel connecting the gas inflow end and the gas outflow end, so that the process gas flows from the gas inflow end of the outlet pipe 317 to the gas outflow end.
  • All the gas outlet pipes 317 are located inside the uniform flow chamber 311, and the gas outflow end of each gas outlet pipe 317 is connected to the corresponding gas outlet port 3131, and the gas inflow end of each gas outlet pipe 317 is close to the top wall of the uniform flow chamber 311 and forms a second gap with the top wall, so that the gas inflow end of the gas outlet pipe 317 is connected to the uniform flow chamber 311.
  • the gas outflow end of the inlet pipe 316 is located below the gas inflow end of the outlet pipe 317. That is, the first gap is located below the second gap.
  • the Z-axis direction represents the axial direction of the process chamber 10, and the axial direction of the uniform flow chamber 311 also extends along the Z-axis.
  • the flow path of the process gas of the semiconductor device 100 of the present embodiment during operation is as follows: the process gas flows out from the outlet end of the first main air inlet pipe 20 to the air guide space S1 surrounded by the upper cover of the process chamber 10 and the top wall of the flow equalizer 31 and is initially equalized. Then, the process gas is divided into multiple streams of process gas. Each stream of process gas flows into the corresponding air inlet pipe 316 from an air inlet 3121, flows into the first gap through the gas outlet end of the air inlet pipe 316, and is sprayed downward to the bottom wall of the flow equalizer chamber 311.
  • the process gas flows radially along the process chamber 10 in the uniform flow chamber 311 and is uniformly gasified. At the same time, the process gas also flows upward to the top wall of the uniform flow chamber 311.
  • the process gas flows from the second gap into the adjacent outlet pipe 317, and is sprayed into the process space S2 between the bottom wall of the uniform flow component 31 and the base 11 through the outlet port 3131 connected to the corresponding outlet pipe 317, and is then sprayed onto the surface of the wafer 200 to perform the corresponding thin film deposition process or etching process.
  • the flow-leveling component 31 of this embodiment is designed with an inlet pipe 316 and an outlet pipe 317, and the gas outlet end of the inlet pipe 316 is located below the gas inlet end of the outlet pipe 317.
  • the process gas passes through the flow-leveling component 31, it will be reflected twice and change the flow direction under the effect of reflection, so that the pressure buffering of the process gas at various locations in the flow-leveling chamber 311 is consistent, that is, the pressure buffering balance can be achieved in the flow-leveling chamber 311.
  • the flow velocity V of the process gas ejected from the various gas outlets 3131 is also consistent, and therefore, the gas ejection amount Q of each gas outlet 3131 is also the same.
  • the process gas is buffered and evenly distributed in the uniform flow chamber 311, thereby enhancing the uniform flow effect and improving the uniformity of the distribution of the process gas, which is beneficial to improving the product yield and the consistency of the process results at various locations on the wafer surface.
  • the flow-leveling component 31 of the present embodiment realizes gas pressure buffering and gas leveling by reversing the flow of the process gas in the flow-leveling chamber 311, its gas leveling performance is less affected by processing and manufacturing errors.
  • the flow-leveling component 31 of the present embodiment and the gas inlet device 30 having the flow-leveling component 31 have excellent compatibility with process conditions, simple structure and favorable effect on reducing the volume of the process chamber 10 to which the flow-leveling component 31 is applied.
  • the size of the first gap in the axial direction Z of the flow-uniform chamber 311 is h1
  • the size of the second gap in the axial direction Z of the flow-uniform chamber 311 is h2, 0.1 mm ⁇ h1 ⁇ H ⁇ 1/2, 0.1 mm ⁇ h2 ⁇ H ⁇ 1/2.
  • H is the height of the flow-uniform chamber 311.
  • h1 and h2 are preferably 0.1 mm, and at this time, h1 and h2 are both small.
  • the air inlet pipe 316 and the air outlet pipe 317 are not limited to being straight pipes, and may also have bends.
  • the extension direction of each air inlet pipe 316 and each air outlet pipe 317 is not limited.
  • the air inlet pipe 316 and the air outlet pipe 317 extend along the axial direction Z of the uniform flow chamber 311.
  • the extension direction of the air inlet pipe 316 and the air outlet pipe 317 may also be inclined to the top wall of the uniform flow chamber 311.
  • the air inlet pipe 316 and the air outlet pipe 317 have bends, for example, the air inlet pipe 316 may be in an "N" shape, and the process gas completes two changes in flow direction during transportation in the air inlet pipe 316.
  • each row of air inlets 3121 includes multiple air inlets 3121 arranged in sequence along the second radial direction of the uniform flow chamber 311.
  • the first radial direction and the second radial direction are perpendicular to each other.
  • the X-axis direction and the Y-axis direction represent the first radial direction and the second radial direction of the uniform flow chamber 311, respectively.
  • the air inlets 3121 are arranged in a grid-like manner on the top wall of the uniform flow chamber 311, that is, arranged in multiple rows and columns.
  • the gas outlets 3131 are evenly distributed on the bottom wall and have the same aperture, so that the process gas can be evenly sprayed onto the surface of the wafer 200 along the bottom wall of the uniform flow chamber 311, thereby ensuring the uniformity of the distribution of the process gas flow.
  • the air inlet 3121 and the air outlet 3131 are staggered in both the first radial direction X and the second radial direction Y.
  • the air inlet pipe 316 and the air outlet pipe 317 are also staggered in both the first radial direction X and the second radial direction Y.
  • the flow path of the process gas ejected from the gas outflow end of the gas inlet pipe 316 needs to change in the radial direction of the flow-uniform chamber 311 and in the axial direction of the flow-uniform chamber 311 before it can flow to the gas inflow end of the gas outlet pipe 317.
  • the number of changes in the flow direction of the process gas in the process of passing through the flow-uniform component 31 increases, further enhancing the gas-uniform effect of the flow-uniform component 31, thereby significantly improving the uniformity of gas distribution and the uniformity of the corresponding process effect.
  • the number of rows and columns of the air inlet pipes 316 and the air outlet pipes 317 is not limited to the above number, and can be designed according to needs and working conditions.
  • the arrangement of the air inlets 3121 may also be a circular array, that is, a plurality of circles of air inlets 3121 are provided on the top wall of the uniform flow chamber 311 and are arranged at radial intervals along the process chamber 10, and from the center of the top wall of the uniform flow chamber 311 to the edge of the top wall, each circle of air inlets 3121 gradually increases, and the number of air inlets 3121 in each circle also gradually increases, that is, the air inlets 3121 in the edge area of the top wall of the uniform flow chamber 311 are denser, which is conducive to making the air intake volume of the air inlet pipe 316 near the edge of the process chamber 10 equivalent to the air intake volume of the air inlet pipe 316 near the center of the process chamber 10, further effectively improving the uniformity of the air flow distribution.
  • the orthographic projections of all the gas outlets 3131 on the flow-uniform chamber 311 on the carrying surface exceed the edge of the wafer 200 carried by the carrying surface of the base 11.
  • each gas outlet 3131 forms an orthographic projection on the carrying surface, and most of these orthographic projections are located inside the location of the wafer 200, but some orthographic projections have partial or all areas located outside the location of the wafer 200.
  • the injection area of the process gas after uniform flow in the flow-uniform chamber 311 can cover the entire wafer 200, so as to ensure the uniformity of the distribution of the process gas injected into various areas on the surface of the wafer 200, thereby improving the consistency of the process effects at various locations on the wafer.
  • the above-mentioned flow-uniform component 31 may specifically include an upper substrate 312, a lower substrate 313, and a first structural ring 314 and a second structural ring 315 arranged between the upper substrate 312 and the lower substrate 313.
  • the upper substrate 312, the first structural ring 314, the second structural ring 315 and the lower substrate 313 together form a flow-uniform cavity 311.
  • one first intake manifold 20 may be provided.
  • the semiconductor device 100 can be a plasma etching device for implementing a semiconductor plasma etching process, and the process gas transported by the first main air inlet pipe 20 into the process chamber 10 is plasma.
  • the plasma is not limited to being provided by a remote plasma source (RPS), and can also be generated by an inductively coupled plasma (ICP) technology or a capacitively coupled plasma (CCP) technology used by the plasma etching device.
  • ICP inductively coupled plasma
  • CCP capacitively coupled plasma
  • the uniform flow component 31 can make the plasma diffuse evenly in the process chamber 10 to avoid the problem of more plasma reaching the center of the wafer 200 and less plasma reaching the edge of the wafer 200, thereby improving the uniformity of the etching effect and the consistency of the process results at various locations on the wafer.
  • the semiconductor device 100 can also be an atomic layer deposition device for implementing an atomic layer deposition process, and the process gas inputted into the process chamber 10 by the first main air inlet pipe 20 is a precursor.
  • the uniform flow component 31 can make the precursor diffuse evenly in the process chamber 10, so as to avoid the problem of high concentration of the precursor reaching the center of the wafer 200 and low concentration of the precursor reaching the edge of the wafer 200, thereby improving the uniformity and consistency of the deposition process results at various locations on the wafer.
  • first main air intake pipes 20 there may be multiple first main air intake pipes 20, and the precursors delivered by each first main air intake pipe 20 may be different.
  • the semiconductor device 100 of this embodiment may be an atomic layer deposition device, and the precursors may be delivered alternately to each first main air intake pipe 20 during the deposition process.
  • each precursor when each first main air inlet pipe 20 alternately introduces precursors into the process chamber 10, each precursor can be evenly distributed by the uniform flow component 31 and then guided to the wafer 200, so that the precursors are evenly distributed.
  • each first main air inlet pipe 20 since each first main air inlet pipe 20 is used to transport a single precursor, it is beneficial to avoid different precursors sharing the first main air inlet pipe 20 and causing a chemical vapor deposition reaction to occur in the first main air inlet pipe 20, which is beneficial to avoid the generation of particles in the first main air inlet pipe 20 due to the generation of reaction by-products and affecting the uniformity of the thin film, so as to greatly improve the deposition uniformity and process yield.
  • such a configuration can effectively prevent the generation of reaction byproducts in the first main air intake pipe 20 and affect the flow cross-sectional area of the first main air intake pipe 20, ensuring that the process efficiency and production capacity of the atomic layer deposition equipment will not be reduced. In addition, it can also effectively avoid shortening the cleaning cycle of the first main air intake pipe 20, ensuring the service life of the first main air intake pipe 20 and the equipment utilization rate.
  • the semiconductor device 100 provided in this embodiment is compatible with a variety of semiconductor process types, has good process compatibility and expansibility, and has high uniformity of process effects and high product yield.
  • the semiconductor device 100 is not limited to plasma etching equipment or atomic layer deposition equipment, and can also be other semiconductor equipment such as CVD, PECVD, etc.
  • the outlet end of the first main air inlet pipe 20 is connected to the first cover plate 21, the first cover plate 21 covers the port of the outlet end of the first main air inlet pipe 20, and the first cover plate 21 is provided with a plurality of outlets 211, and the pipe wall of the outlet end of the first main air inlet pipe 20 is provided with a plurality of outlets 211 at intervals along the circumferential direction, and the axial direction of the outlets 211 on the pipe wall is perpendicular to the axial direction Z of the process chamber 10.
  • the plurality of outlets 211 on the pipe wall of the first main air inlet pipe 20 can be evenly distributed along the circumference of the first main air inlet pipe 20.
  • the process gas when the process gas flows from the outlet 211 of the first main air inlet pipe 20 to the gas guide space S1, the process gas can be divided into multiple small air flows, and some of the multiple small air flows are transported from the outlet 211 on the first cover plate 21 to the gas guide space S1 along the axial direction Z of the process chamber 10, and the remaining parts are transported from the outlet 211 on the pipe wall of the first main air inlet pipe 20 to the gas guide space S1 along the radial direction of the process chamber 10.
  • the process gas in the process of the process gas flowing from the outlet 211 of the first main air inlet pipe 20 to the gas guide space S1, the process gas can be diffused evenly in the axial direction Z of the process chamber 10 and in the radial direction of the process chamber 10, thereby improving the effect of the process gas diffusion to the edge of the process chamber 10, thereby improving the uniformity of gas distribution at various locations in the process chamber 10.
  • the semiconductor device 100 disclosed in the present embodiment may further be provided with a support ring 12 inside the process chamber 10, the support ring 12 is fixedly connected to the inner wall of the process chamber 10, and the bottom of the flow equalizer assembly 31 is fixedly arranged on the support ring 12.
  • the support ring 12 can play a role in supporting the flow equalizer assembly 31, so that the flow equalizer assembly 31 can be stably installed in the process chamber 10.
  • the lower base plate 313 of the flow-uniform chamber 311 can be fixedly overlapped on the support ring 12.
  • the bottom of the flow-uniform component 31 can also be provided with an avoidance annular groove 318, and the support ring 12 is embedded in the avoidance annular groove 318, so that the support ring 12 does not protrude from the bottom surface of the flow-uniform component 31. In this way, the support ring 12 does not need to occupy additional space in the axial direction of the process chamber 10.
  • the current equalizing component 31 may also be grounded. Specifically, any one or more of the upper substrate 312, the lower substrate 313, the first structure ring 314, and the second structure ring 315 may be grounded.
  • the process gas (such as fluorine-based gases such as CF4, NF3) is dissociated by energy sources such as RPS, CCP or ICP to form plasma, and the plasma is introduced into the flow equalizer component 31 through the air inlet 3121.
  • the charged particles in the plasma (electrons, charged ions, radicals and other types of charged particles) will be recombined during the transportation process and collide, adsorb and neutralize with the wall of the air inlet pipe 316, the wall of the air outlet pipe 317 and the top wall, side wall and bottom wall of the flow equalizer chamber 311, so as to be filtered out.
  • the uncharged free radicals in the plasma are fully and evenly diffused in the flow equalizer chamber 311 and can pass through the flow equalizer component 31 smoothly, and then are sprayed into the process space S2 through the air outlet 3131, and are evenly sprayed onto the surface of the wafer 200 to perform an isotropic etching process.
  • problems such as vertical etching and surface material damage of the wafer 200 caused by charged particles in the plasma bombarding the surface of the wafer 200 can be effectively avoided. Therefore, the free radical etching equipment can realize isotropic free radical etching, which can be used for free radical lateral etching process and ensure the consistency and uniformity of the process effect.
  • the process gas ejected from the inlet pipe 316 needs to change its flow direction before it can be transported to the outlet pipe 317.
  • This process increases the probability of charged particles being recombined and colliding, adsorbing and neutralizing with the wall of the inlet pipe 316, the wall of the outlet pipe 317 and the top wall, side wall and bottom wall of the uniform flow chamber 311 during transportation, thereby significantly improving the filtering effect of the uniform flow component 31 on charged particles, thereby further improving the uniformity and consistency of the isotropic etching process effect.
  • the dissociated plasma can be introduced into the uniform flow component 31 at the same time as the chemical gas, thereby achieving effective filtering of the charged particles and radicals in the plasma and uniform gas effects on free radicals and chemical gases, so as to meet the requirements of free radical etching and chemical etching processes being carried out simultaneously in special processes.
  • the plasma is likely to collide with the pipe wall of the inlet pipe 316 when it changes direction at the bend of the inlet pipe 316 during the process of flowing in the inlet pipe 316, which effectively increases the possibility of charged particles in the plasma being neutralized and filtered, and improves the filtering effect.
  • the plasma is likely to collide with the pipe wall of the outlet pipe 317 when it changes direction at the bend of the outlet pipe 317 during the process of flowing in the outlet pipe 317.
  • This embodiment is similar to the first embodiment, and the main difference is that the inlet pipe 316 and the outlet pipe 317 are connected to the uniform flow chamber 311 in different ways.
  • the gas outflow end of the inlet pipe 316 and the gas inflow end of the outlet pipe 317 in the uniform flow assembly 31 are penetrated by their internal channels to achieve communication with the uniform flow chamber 311, while in this embodiment, the gas outflow end of the inlet pipe 316 and the gas inflow end of the outlet pipe 317 are both closed, and the first uniform flow hole 3161 connected to the uniform flow chamber 311 is provided on the tube wall of the gas outflow end of the inlet pipe 316, and the second uniform flow hole 3171 connected to the uniform flow chamber 311 is provided on the tube wall of the gas inflow end of the outlet pipe 317.
  • first uniform flow hole 3161 and the second uniform flow hole 3171 are perpendicular to the axial direction Z of the process chamber 10.
  • a plurality of the first uniform flow hole 3161 and the second uniform flow hole 3171 are provided, and the plurality of first uniform flow holes 3161 can be evenly distributed and spaced along the circumference of the inlet pipe 316, and the plurality of second uniform flow holes 3171 can be evenly distributed and spaced along the circumference of the outlet pipe 317.
  • the process gas ejected from the air inlet pipe 316 enters the uniform flow chamber 311 along the radial direction of the process chamber 10 through the first uniform flow hole 3161, and the process gas diffuses along the radial direction of the process chamber 10 and flows upward along the axial direction of the process chamber 10, and then enters the air outlet pipe 317 along the radial direction of the process chamber 10 through the second uniform flow hole 3171, and is then ejected from the air outlet 3131 into the process space S2.
  • the uniform flow component 31 of this embodiment by providing a first uniform flow hole 3161 on the tube wall of the air inlet pipe 316 and a second uniform flow hole 3171 on the tube wall of the air outlet pipe 317, can not only change the flow direction of the process gas and realize buffer diffusion in the uniform flow chamber 311 to achieve air pressure balance, thereby enhancing the uniform flow effect, but also can uniformly flow the process gas in the radial direction of the uniform flow chamber 311, thereby improving the uniformity of the diffusion of the process gas to the edge of the process chamber 10.
  • the gas outflow end of the air inlet pipe 316 being closed should be understood in a broad sense. It can be understood that the gas outflow end of the air inlet pipe 316 is fixedly connected to the bottom wall of the uniform flow chamber 311 and is blocked, or it can be understood that the channel inside the air inlet pipe 316 does not penetrate the gas outflow end of the air inlet pipe 316. Similarly, the gas inflow end of the air outlet pipe 317 is fixedly connected to the top wall and is blocked, or the channel inside the air outlet pipe 317 does not penetrate the gas inflow end of the air outlet pipe 317.
  • Any semiconductor device 100 in this embodiment may be a plasma etching device, or may be an atomic layer deposition device, a PECVD device, a CVD device, a free radical etching device, or the like.
  • This embodiment is similar to the above-mentioned embodiment 1 and embodiment 2, except that, in embodiment 1 and embodiment 2, the air intake device 30 is provided with only one uniform flow component 31, while in this embodiment, the air intake device 30 is provided with multiple uniform flow components 31, and the uniform flow cavities 311 of each uniform flow component 31 are interconnected. It should be understood that in each of the drawings of this embodiment, two uniform flow components 31 are provided, and the structure of the uniform flow component 31 is the structure in embodiment 2 for illustration, which should not be regarded as limiting the present application.
  • the air intake device 30 includes a plurality of stacked and spaced flow equalizers 31.
  • the air intake device 30 also includes a connecting ring 32 disposed between any two adjacent flow equalizers 31 and connected to the two adjacent flow equalizers 31, and the connecting ring 32 and the two adjacent flow equalizers 31 together enclose an air intake space 33.
  • the air outlet 3131 of the first first flow-uniform component 31a is communicated with the air inlet 3121 of the second first flow-uniform component 31a through the air inlet space 33 between the two first flow-uniform components 31a, and the air outlet 3131 of the second first flow-uniform component 31a is communicated with the air inlet 3121 of the second flow-uniform component 31b through the air inlet space 33 between the second first flow-uniform component 31a and the second flow-uniform component 31b.
  • the process gas flowing out from the gas outlet 3131 of the first uniform flow component 31a is sprayed into the gas inlet space 33, and its flow direction needs to be changed along the radial direction of the process chamber 10 before it can flow to the gas inlet 3121 of the second uniform flow component 31b.
  • the inlet pipes 316 of the first flow-leveling component 31a are specifically arranged in ten rows along the first radial direction X and in eleven rows along the second radial direction Y, and the outlet pipes 317 of the first flow-leveling component 31a are specifically arranged in eleven rows along the first radial direction X and in ten rows along the second radial direction Y.
  • the holes depicted by dashed lines in Figure 19 are schematic diagrams of the outlet pipes 317 in the first flow-leveling component 31a
  • the holes depicted by solid lines are schematic diagrams of the inlet pipes 316 in the first flow-leveling component 31a.
  • the connecting tubes 34 are also arranged in eleven rows along the first radial direction X and in ten columns along the second radial direction Y.
  • the number of rows of connecting tubes 34 along the first radial direction X is equal to the number of rows of inlet pipes 316 of the second uniform flow component 31b, and each row of connecting tubes 34 is arranged side by side with each row of inlet pipes 316 of the second uniform flow component 31b.
  • the number of rows of connecting tubes 34 arranged along the second radial direction Y is equal to the number of rows of outlet pipes 317 of the second uniform flow component 31b, and each row of connecting tubes 34 is arranged side by side with each row of outlet pipes 317 of the second uniform flow component 31b.
  • the process gas flowing out of the outlet 211 of the first main air inlet pipe 20 enters the first uniform flow component 31a, and after being uniformly gasified by the first uniform flow component 31a, enters the connecting pipe 34, and is then directly transported to the process space S2 from the gas outlet end of the connecting pipe 34.
  • the process gas flowing out of the gas outlet end of the second main air inlet pipe 35 enters the gas inlet space 33, and then flows into the second uniform flow component 31b, and after being uniformly gasified by the second uniform flow component 31b, is ejected to the process space S2 from the gas outlet 3131 of the second uniform flow component 31b.
  • the process gas flowing out of the outlet 211 of the first main air inlet pipe 20 is homogenized by the first first flow homogenizer 31a and then directly transported to the process space S2 through the connecting pipe 34.
  • the process gas flowing out of the outlet end of the second main air inlet pipe 35 corresponding to the air inlet space 33 between the two first flow homogenizers 31a is homogenized by the second first flow homogenizer 31a and then directly transported to the process space S2 through the connecting pipe 34.
  • the air intake device 30 is provided with a plurality of uniform flow components 31, and when the air intake device 30 is provided with a connecting pipe 34, each uniform flow component 31 is not connected to each other and is independent of each other.
  • each uniform flow component 31 can independently uniformize the process gas delivered to its corresponding uniform flow chamber 311.
  • the second main air intake pipe 35 can also be fixedly connected to the flow-uniform component 31 through which it passes, thereby improving the structural reliability of the air intake device 30 .
  • the first main air intake pipe 20 and the second main air intake pipe 35 are both one.
  • the semiconductor equipment 100 using the air intake device 30 of this embodiment is an atomic layer deposition equipment, different precursors can be alternately introduced into the first main air intake pipe 20 and the second main air intake pipe 35.
  • each uniform flow component 31 can perform uniform gas flow on a precursor.
  • this embodiment not only can different precursors be prevented from sharing the same first main air inlet pipe 20, but also different precursors can be prevented from sharing the same uniform flow component 31 for uniform flow.
  • the problem of chemical vapor deposition reaction occurring in the uniform flow component 31 due to different precursors sharing the same uniform flow component 31 can be effectively avoided, which is conducive to avoiding the generation of reaction by-products in the uniform flow component 31 and affecting the uniformity of the uniform flow, and ensuring the quality of thin film preparation and the consistency and uniformity of the process effect.
  • the outlet end of the second main air inlet pipe 35 is connected to a second cover plate 351, the second cover plate 351 covers the port of the outlet end of the second main air inlet pipe 35, a plurality of openings 352 are distributed on the second cover plate 351, and a plurality of openings 352 are arranged at intervals along the circumferential direction on the pipe wall of the outlet end of the second main air inlet pipe 35, and the axial direction of the openings 352 on the pipe wall is perpendicular to the axial direction Z of the process chamber 10.
  • the plurality of openings 352 on the pipe wall of the second main air inlet pipe 35 can be evenly distributed along the circumference of the second main air inlet pipe 35.
  • the process gas when the process gas flows from the outlet end of the second main air inlet pipe 35 to the air inlet space 33, the process gas can be divided into multiple small air flows, and some of the multiple small air flows enter the air inlet space 33 from the opening 352 on the second cover plate 351 along the axial direction Z of the process chamber 10, and the remaining parts enter the air inlet space 33 from the opening 352 on the tube wall along the radial direction of the process chamber 10.
  • each of the multiple flow equalizer components 31 can be grounded, so that each flow equalizer component 31 can filter the process gas passing into the interior thereof.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Air-Flow Control Members (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本申请提供一种匀流组件、进气装置及半导体设备，匀流组件内部具有匀流腔，匀流腔的顶壁上设有沿自身厚度方向贯穿顶壁的多个进气口，匀流腔的底壁上设有沿自身厚度方向贯穿底壁的多个出气口；匀流腔内部设有与多个进气口一一对应设置的多个进气管，以及与多个出气口一一对应设置的多个出气管；进气管的第一端与对应的进气口连接，进气管的第二端与匀流腔连通；出气管的第一端与对应的出气口连接，出气管的第二端与匀流腔连通；进气管的第二端位于出气管的第二端的下方。采用本申请，工艺气体通过匀流组件的过程中会改变流动方向，以利于使各个出气口的气体喷出量相同，提升了工艺气体的分布均匀性，工艺均匀性和产品良率随之提高。

Description

匀流组件、进气装置及半导体设备 技术领域
本申请涉及半导体制造技术领域，具体地，涉及一种匀流组件、进气装置及半导体设备。
背景技术
进气装置是半导体设备中非常重要的一个组成部分，主要用于将反应的工艺气体通入至工艺腔室中，实现薄膜的生长及刻蚀等相关工艺。进气装置喷射出气体的均匀性，直接影响工艺结果均匀性。
在一些相关技术中，利用匀流板来改善气体均匀性。具体的，如图1所示，半导体设备100’的工艺腔室10’内设有基座11’，基座11’用于承载晶圆(Wafer)200，半导体设备100’的进气装置具有进气流道21’和设置在工艺腔室10’内的匀流板31’，工艺气体经由进气流道21’输送至工艺腔室10’内，匀流板31’上设有多个通孔311’，各个通孔311’的孔径一致，使得工艺气体通过匀流板31’匀气后导引至晶圆200表面。
但是，采用该方式并不能保证晶圆200上方的工艺气体均匀分布，造成工艺结果均匀性差，产品良率低的问题。
发明内容
本申请旨在至少解决现有技术中存在的技术问题之一，提出了一种匀流组件、进气装置及半导体设备。
第一方面，本申请提供一种匀流组件，所述匀流组件内部具有匀流腔，所述匀流腔的顶壁上设有沿自身厚度方向贯穿所述顶壁的多个进气口，所述匀流腔的底壁上设有沿自身厚度方向贯穿所述底壁的多个出气口；所述匀流腔内部设有与所述多个进气口一一对应设置的多个进气管，以及与所述多个出气口一一对应设置的多个出气管；所述进气管的第一端与对应的进气口连接，所述进气管的第二端与所述匀流腔连通；所述出气管的第一端与对应的出气口连接，所述出气管的第二端与所述匀流腔连通；所述进气管的第二端位于所述出气管的第二端的下方。
在一些可能的实施方式中，所述进气管的第二端封闭，且所述进气管的第二端的管壁上沿周向间隔设置有多个第一匀流通孔；和/或，所述出气管的第二端封闭，且所述出气管的第二端的管壁上沿周向间隔设置有多个第二匀流通孔。
在一些可能的实施方式中，所述进气管内部的通道贯穿对应的所述进气管的第二端，且所述进气管的第二端靠近所述底壁并与所述底壁之间形成第一间隙；和/或，所述出气管内部的通道贯穿对应的所述出气管的第二端，且所述出气管的第二端靠近所述顶壁并与所述顶壁之间形成第二间隙。
在一些可能的实施方式中，在所述进气管的第二端与所述底壁之间形成第一间隙且所述出气管的第二端与所述顶壁之间形成第二间隙时，所述第一间隙和所述第二间隙在所述匀流腔的轴向上的尺寸均大于等于0.1mm且小于等于所述匀流腔的高度的二分之一。
在一些可能的实施方式中，所有所述进气管和所有所述出气管均沿所述匀流腔的轴向延伸；
所述顶壁上分布有沿所述匀流腔的第一径向依次间隔设置的多排所述进气口，每排所述进气口包括沿所述匀流腔的第二径向依次间隔设置的多个所述进气口；或者，所述顶壁上沿所述匀流腔的径向间隔设置有多圈所述进气口，由所述顶壁的中心至边缘，各圈进气口的孔径逐渐增大，且各圈中进气口的数量逐渐增多；
所述底壁上分布有沿第一径向依次间隔设置的多排所述出气口，每排所述出气口包括沿第二径向依次间隔设置的多个所述出气口；
所述进气口和所述出气口在所述第一径向和所述第二径向上均相互错开；其中，所述第一径向、所述第二径向和所述匀流腔的轴向两两垂直。
在一些可能的实施方式中，所述匀流腔上所有所述出气口在半导体设备的基座的承载面的正投影超出所述承载面承载的晶圆的边缘。
第二方面，本申请提供一种进气装置，包括：一个或层叠且间隔设置的多个匀流组件以及至少一个第一总进气管；匀流组件为本申请第一方面提供的任一种匀流组件，当所述进气装置包括一个所述匀流组件时，所述第一总进气管的出口位于所述匀流组件的进气口侧；当所述进气装置包括多个所述匀流组件时，所述第一总进气管的出口位于沿匀流腔的轴向由上至下层叠设置的首个所述匀流组件的进气口侧。
在一些可能的实施方式中，当所述进气装置包括多个所述匀流组件时，所述进气装置还包括：设于任意相邻两个所述匀流组件之间且与该相邻两个所述匀流组件均连接的连接环，所述连接环与该相邻两个所述匀流组件共同围成进气空间。
在一些可能的实施方式中，以沿所述匀流腔的轴向由上至下层叠设置的多个所述匀流组件中的最后一个所述匀流组件为第二匀流组件，其余所述匀流组件均为第一匀流组件；所述进气装置还包括：至少一个第二总进气管以及针对每一所述第一匀流组件设置的多个连通管；且所述连通管的进气端与对应的所述第一匀流组件的出气口连接，所述连通管的出气端穿过位于对应的所述第一匀流组件下方的所有匀流组件而暴露于所述第二匀流组件的出气口侧；
每一所述进气空间对应连通至少一个所述第二总进气管；与所述进气空间对应的所述第二总进气管贯穿位于所述进气空间上方的其他匀流组件进入对应的所述进气空间。
在一些可能的实施方式中，每一所述进气空间对应一个所述第二总进气管。
在一些可能的实施方式中，当所述进气装置包括两个所述匀流组件时，所述进气空间为一个，所述连通管的数量与所述第一匀流组件的出气口的数量相同；
所述连通管贯穿所述进气空间和所述第二匀流组件，且所述连通管的进气端与所述第一匀流组件的出气口连接，所述连通管的出气端暴露于所述第二匀流组件的出气口侧。
在一些可能的实施方式中，所述第一总进气管的出气端连接有第一盖板，所述第一盖板覆盖住所述第一总进气管的出气端的端口，所述第一盖板上分布有多个出口，所述第一总进气管的出气端的管壁上沿周向间隔设置有多个出口。
在一些可能的实施方式中，所述第二总进气管的出气端连接有第二盖板，所述第二盖板覆盖住所述第二总进气管的出气端的端口，所述第二盖板上分布有多个开孔，所述第二总进气管的出气端的管壁上沿周向间隔设置有多个开孔。
第三方面，本申请提供一种半导体设备，包括：工艺腔室以及本申请第二方面提供的任一种进气装置，工艺腔室内部设有基座，所述基座具有用于承载晶圆的承载面；所述匀流组件位于所述工艺腔室内，所述匀流组件与所述基座相对；所述第一总进气管的进气端位于所述工艺腔室外，所述第一总进气管的出气端位于所述工艺腔室内。
在一些可能的实施方式中，半导体设备还包括设置在所述工艺腔室内部的支撑环，所述支撑环与所述工艺腔室的内壁固定连接；当所述进气装置包括一个所述匀流组件时，所述匀流组件的底部固定设置在所述支撑环上；当所述进气装置包括多个所述匀流组件时，沿所述匀流腔的轴向由上至下层叠设置的多个所述匀流组件中最后一个所述匀流组件为第二匀流组件，所述第二匀流组件的底部固定设置在所述支撑环上。
在一些可能的实施方式中，所述进气装置上存在至少一个所述匀流组件接地设置。
本申请具有以下有益效果：
本申请提供的匀流组件，通过设计内部具有匀流腔，匀流腔内部设有进气管和出气管，进气管的第一端与匀流腔顶壁的进气口连接、第二端与匀流腔连通，出气管的第一端与匀流腔底壁的出气口连接、第二端与匀流腔连通，且进气管的第二端位于出气管的第二端的下方。
这样，工艺气体通过匀流组件时，由进气管的第二端流出至匀流腔内，再流至出气管内。此过程中，工艺气体需要改变流动方向，这样使得工艺气体在匀流腔的各处的压强一致，即匀流腔内可实现气压均衡。基于此，在各个出气口的孔径相等的情况下，各个出气口喷出的工艺气体的流动速度也一致，因此，各个出气口的气体喷出量相同。如此，增强了匀流效果，提升了工艺气体的分布均匀性，进而有利于提高产品良率。
附图说明
图1为一些相关技术提供的半导体设备的截面示意图；
图2和图3为另一些相关技术提供的半导体设备中匀流板的示意图；
图4为再一些相关技术提供的半导体设备的截面示意图；
图5为本申请实施例一提供的一种半导体设备的结构示意图；
图6为图5所示的半导体设备沿A-A方向的截面示意图；
图7为图5所示的半导体设备中匀流组件的立体结构示意图；
图8为图7所示的匀流组件的侧视图；
图9为图7所示的匀流组件的仰视图；
图10为图9所示的匀流组件沿B-B方向的截面示意图；
图11为图5所示的半导体设备中第一总进气管的结构示意图；
图12为本申请实施例三提供的一种半导体设备的结构示意图；
图13为本申请实施例四提供的另一种半导体设备的结构；
图14为图13所示的半导体设备的俯视图；
图15为图14所示的半导体设备沿C-C方向的截面示意图；
图16为图13所示的半导体设备中进气装置的主视图；
图17为图16所示的进气装置沿D-D方向的截面示意图；
图18为图16所示的进气装置沿E-E方向的截面示意图；
图19为图16所示的进气装置沿F-F方向的截面示意图；
图20为图16所示的进气装置沿G-G方向的截面示意图；
图21为图16所示的进气装置沿H-H方向的截面示意图；
图22为图16所示的进气装置沿I-I方向的截面示意图；
图23为图16所示的进气装置沿J-J方向的截面示意图；
图24为图22所示的进气装置沿K-K方向的截面示意图；
图25为图22所示的进气装置沿L-L方向的截面示意图。
附图标记说明：
100-半导体设备；
10-工艺腔室；11-基座；12-支撑环；
20-第一总进气管；21-第一盖板；211-出口；
30-进气装置；31-匀流组件；31a-第一匀流组件；31b-第二匀流组件；311-匀流腔；312-上基板；3121-进气口；313-下基板；3131-出气口；314-第一结构环；315-第二结构环；316-进气管；3161-第一匀流通孔；317-出气管；3171-第二匀流通孔；318-避让环形槽；32-连接环；33-进气空间；34-连通管；35-第二总进气管；351-第二盖板；352-开孔；
200-晶圆。
具体实施方式
可理解，虽然图1所示的相关技术中匀流板31’能够对工艺气体进行匀气，但是，由于进气流道21’的出气端与匀流板31’的中心相对应，这使得工艺气体朝向位于匀流板31’中部的通孔311’的扩散速度大于朝向位于匀流板31’周边的通孔311’的扩散速度，造成经过各个通孔311’的工艺气体的流动速度存在差异，形成了射流效应，进而导致工艺腔室10’内的气流分布不均匀，最终造成工艺结果均匀性差，产品良率低等问题。
为此，相关技术中，如图2和图3所示，匀流板31’上分布有沿其径向间隔设置的多圈通孔311’，每圈通孔311’由沿匀流板31’的周向间隔设置的多个通孔311’组成。并且，由匀流板31’的中心至边缘，各圈通孔311’的孔径逐渐变大，且各圈通孔311’所包含的通孔311’数量逐渐增多。
根据气体流动速度与流量的关系表达式:Q＝V×S可以理解，单个通孔311’的气体喷出量Q与工艺气体流经该通孔311’的流动速度V及该通孔311’的流通截面积S有关。基于此，图2和图3所示的相关技术中，通过将越靠近匀流板31’边缘的通孔311’孔径设置的越大、数量设置的越多，以促使经各个通孔311’的气体喷出量Q分布密度几近相当来提高工艺均匀性，但各个通孔311’流经的工艺气体的流动速度V差异会造成工艺结果一致性变差。
然而，针对不同的工艺条件(即气压、工艺气体的流动速度及流量)，为实现工艺气体在工艺腔室10’内分布的均匀性，通孔311’的排布方式也应不同。因此，单个匀流板31’难以适用于不同的工艺条件，并不具备良好的工艺兼容性及拓展性。
其他相关技术中，如图4所示，半导体设备100’的进气装置还设有扩散通道41’，从进气流道21’的流出端喷射出的工艺气体经由扩散通道41’扩散后，接着通过匀流板31’的通孔311’流入工艺腔室10’内。
当图4所示的半导体设备100’为原子层沉积(Atomic Layer Deposition，简称ALD)设备时，一种示例性地工艺过程具体为：i)向进气流道21’内通入两种稀释气体；ii)向进气流道21’内通入第一前驱体和稀释气体；iii)停止向进气流道21’通入第一前驱体，并继续向进气流道21’通入稀释气体；iv)向进气流道21’内通入第二前驱体和稀释气体；v)停止向进气流道21’通入第二前驱体，并继续向进气流道21’通入稀释气体；vi)循环执行步骤ii)至步骤v)。这样，第一前驱体和第二前驱体交替地通入工艺腔室10’内。相关技术中虽然增加了扩散通道41’，但并不能保证工艺气体分布的均匀性，且对于不同的工艺条件并不具备兼容性及拓展性，由此采用该半导体设备100’制备的薄膜均匀性及一致性差，产品良率低。
申请人经过仔细研究发现，造成该技术问题的原因在于：
一是通入进气流道21’的工艺气体通常包含多种气体成分，例如，上述步骤ii)和步骤iv)中同时通入多种气体，由于不同气体的密度及流量设定存在差异，因此，各种气体的扩散效率及气体分布不同，密度大的气体容易集中在扩散通道41’的中心区域而难以扩散到扩散通道41’的周边区域，造成到达晶圆中心位置的工艺气体的浓度偏高、到达晶圆边缘的工艺气体的浓度偏低，从而导致工艺气体分布的不均匀，而工艺结果均匀性与工艺气体分布均匀性具有强相关性，因此，这样会造成薄膜制备效果的均匀性差，影响产品良率。
同理，当应用图4所示的半导体设备100’来实施等离子刻蚀工艺时，向进气流道21’通入等离子体，扩散通道41’对等离子体向匀流板31’的边缘扩散效果差，导致到达晶圆中心的等离子体多、到达晶圆边缘的等离子体少，从而影响刻蚀效果的均匀性及一致性。同样对于自由基各向同性刻蚀工艺，扩散通道41’及匀流板31’的组合并不能完全过滤掉等离子体中的带电粒子，从而导致自由基各向同性刻蚀效果一致性差而影响产品良率。
二是由于两种前驱体共用一个进气流道21’，两种前驱体残气容易在进气流道21’内发生化学气相淀积(Chemical Vapor Deposition，简称CVD)反应，导致进气流道21’的流道壁上容易生成反应副产物。随着工艺时间变长，反应副产物堆积到一定厚度时，反应副产物容易被工艺气体吹落或者自然掉落至晶圆表面上，导致薄膜表面的颗粒度增加，影响薄膜的成膜质量及产品良率。
并且，由于进气流道21’的流道壁上容易生成反应副产物，所以该方式还存在许多缺陷。
首先，当反应副产物堆积到一定厚度时，反应副产物会影响进气流道21’的流通截面积，在流动速度一定的前提下，通入工艺腔室10’的气量会减小，工艺效率降低，影响产品工艺一致性及设备产能。
其次，进气装置的清洗周期缩短，影响进气装置的寿命及设备稼动率。
有鉴于此，本申请实施例提供一种匀流组件、进气装置及半导体设备。为使本领域的技术人员更好地理解本申请的技术方案，下面结合附图来对本申请提供的匀流组件、进气装置及半导体设备进行详细描述。
实施例一
请参阅图5、图6和图7，本申请实施例提供的半导体设备100，其包括工艺腔室10和进气装置30，工艺腔室10内部设有基座11，基座11具有承载面，承载面用于承载晶圆200，使得晶圆200在工艺腔室10内进行工艺处理。
进气装置30用于向工艺腔室10内部通入工艺气体。本实施例提供的一种进气装置30包括第一总进气管20和一个匀流组件31，第一总进气管20的进气端位于工艺腔室10外，第一总进气管20的出气端自工艺腔室10的顶部伸入至工艺腔室10内，且第一总进气管20的出气端位于匀流组件31的进气口侧。
匀流组件31与基座11相对，匀流组件31能够对由第一总进气管20的出气端流出的工艺气体进行匀气，以使工艺气体均匀地喷射至晶圆200的表面。下文中先对匀流组件31的结构进行详细介绍。
请参阅图7至图10，本实施例提供的一种匀流组件31，其内部具有匀流腔311，匀流腔311的顶壁上设有沿自身厚度方向贯穿顶壁的多个进气口3121，匀流腔311的底壁上设有沿自身厚度方向贯穿底壁的多个出气口3131。示例性的，各个出气口3131的孔径相等。
匀流腔311内部还设有多个进气管316和多个出气管317。进气管316和出气管317均具有两端，如本文所用，进气管316的“第一端”与进气管316的“气体流入端”可以互换使用，进气管316的“第二端”与进气管316的“气体流出端”可以互换使用，出气管317的“第一端”与出气管317的“气体流出端”可以互换使用，出气管317的“第二端”与出气管317的“气体流入端”可以互换使用。示例性的，进气管316的数量与进气口3121的数量相等，多个进气管316与多个进气口3121一一对应，每个进气管316的气体流入端与对应的进气口3121连通、气体流出端被其内部的通道贯穿，使得每个进气管316的气体流出端与匀流腔311连通，且进气管316的气体流出端靠近匀流腔311底壁并与底壁之间形成第一间隙，换言之，每个进气管316的两端分别为气体流入端和气体流出端，进气管316内部具有连通气体流入端和气体流出端的通道，以使工艺气体自进气管316的气体流入端流向气体流出端。所有进气管316均位于匀流腔311内部，每个进气管316的气体流入端与对应的进气口3121连通，每个进气管316的气体流出端靠近匀流腔311底壁并与底壁之间形成第一间隙，以使进气管316的气体流出端与匀流腔311连通。示例性的，出气管317的数量与出气口3131的数量相等，多个出气管317与多个出气口3131一一对应，每个出气管317的气体流出端与对应的出气口3131连接、气体流入端被其内部的通道贯穿，使得每个出气管317的气体流入端与匀流腔311连通，且出气管317的气体流入端靠近匀流腔311顶壁并与顶壁之间形成第二间隙，换言之，每个出气管317的两端分别为气体流入端和气体流出端，出气管317内部具有连通气体流入端和气体流出端的通道，以使工艺气体自出气管317的气体流入端流向气体流出端。所有出气管317均位于匀流腔311内部，每个出气管317的气体流出端与对应的出气口3131连通，每个出气管317的气体流入端靠近匀流腔311顶壁并与顶壁之间形成第二间隙，以使出气管317的气体流入端与匀流腔311连通。
还需指出，沿工艺腔室10的轴向，进气管316的气体流出端位于出气管317的气体流入端的下方。也即，第一间隙位于第二间隙下方。需说明的是，在本申请各个实施例的附图中，Z轴方向代表着工艺腔室10的轴向，且匀流腔311的轴向也沿Z轴延伸。
请参见图6，本实施例的半导体设备100在工作过程中工艺气体的流动路径为：工艺气体从第一总进气管20的出气端流出至工艺腔室10的上顶盖与匀流组件31的顶壁共同围成的导气空间S1内并进行初始匀气，之后工艺气体分成多股工艺气体，每股工艺气体由一个进气口3121流入至对应的进气管316内，经进气管316的气体流出端流动至第一间隙内并向下喷射至匀流腔311的底壁，经由匀流腔311底壁的反射，工艺气体在匀流腔311内沿工艺腔室10的径向流动并匀气，同时工艺气体还向上流动至匀流腔311的顶壁，经由匀流腔311顶壁的反射，工艺气体由第二间隙流入邻近的出气管317内，经由对应出气管317连接的出气口3131喷射进入匀流组件31的底壁与基座11之间的工艺空间S2内，继而喷射至晶圆200表面，进行相应的薄膜沉积工艺或刻蚀工艺。
由此可见，本实施例的匀流组件31通过设计进气管316和出气管317，且进气管316的气体流出端位于出气管317的气体流入端的下方，这样，工艺气体通过匀流组件31时会受到两次反射并在反射作用下改变流动方向，这样使得工艺气体在匀流腔311的各处的压强缓冲一致，即在匀流腔311内可实现气压缓冲均衡。基于此，在各个出气口3131的孔径相等(即各个出气口3131的流通截面积S相等)的情况下，各个出气口3131喷出的工艺气体的流动速度V也一致，因此，各个出气口3131的气体喷出量Q也相同。如此，通过工艺气体在匀流腔311内缓冲匀气从而增强了匀流效果，提升了工艺气体的分布均匀性，进而有利于提高产品良率及晶圆表面各处的工艺结果一致性，换言之，本实施例的匀流组件31通过使从进气管316流至出气管317的工艺气体的流动方向至少在竖直方向上发生一次方向改变，使得气体在匀流腔311内进行缓冲匀气，进而可以使从进气管316流出的工艺气体的压力差异在匀流腔311内得到缓解，这样使得气体在匀流腔311的各处的压强缓冲一致，则在各个出气口3131的截面积相等的情况下，使得各个出气口3131的气体喷出量相同，实现匀流。
而且，由于本实施例的匀流组件31通过使工艺气体在匀流腔311内流动换向来实现气体的气压缓冲及匀气，其匀气性能受加工制造误差的影响小。同时，与图2及图3所示的相关技术相比，本实施例的匀流组件31及具备该匀流组件31的进气装置30，具有优秀的工艺条件兼容性，结构简单且对缩小应用该匀流组件31的工艺腔室10的容积带来有利影响。
如图8所示，本申请所公开的匀流组件31中，上述第一间隙在匀流腔311的轴向Z上的尺寸为h1，上述第二间隙在匀流腔311的轴向Z上的尺寸为h2，0.1mm≤h1≤H×1/2，0.1mm≤h2≤H×1/2。其中，H为匀流腔311的高度。其中，h1和h2优选为0.1mm，此时的h1和h2均较小。这样，一方面，能够有效延长工艺气体从进气管316的气体流出端流至出气管317的气体流入端的输运路径，以利于改善匀气效果，另一方面，第一间隙和第二间隙相当于狭缝，这样还可促使工艺气体进出狭缝时沿匀流腔311的径向流动，以使工艺气体在工艺腔室10径向上的扩散效果得以有效改善，提高了工艺气体向工艺腔室10边缘扩散的均匀性。
进气管316和出气管317不限于为直管，也可以具有弯折。在进气管316和出气管317为直管时，各个进气管316和各个出气管317的延伸方向是不限的。例如，请继续参阅图6和图8，进气管316和出气管317沿匀流腔311的轴向Z延伸。再例如，进气管316和出气管317的延伸方向也可以倾斜于匀流腔311的顶壁。在进气管316和出气管317具有弯折时，例如进气管316可呈“N”字形，工艺气体在进气管316内输运过程中完成了两次流动方向的改变。
请继续参阅图7和图9，顶壁上分布有沿匀流腔311的第一径向依次间隔设置的多排进气口3121，每排进气口3121包括沿匀流腔311的第二径向依次间隔设置的多个进气口3121。其中，第一径向和第二径向相互垂直。需说明的是，在本申请各个实施例的附图中，X轴方向和Y轴方向分别代表着匀流腔311的第一径向、第二径向。也就是说，进气口3121在匀流腔311的顶壁上呈网格型排布，即排布成多排多列。
其中，多排进气口3121具体可沿第一径向均匀分布，多列进气口3121具体可沿第二径向均匀分布。这样，进气口3121在顶壁上均匀分布，以便于使通入至导气空间S1的工艺气体能够沿匀流腔311的径向均匀的扩散至各个进气口3121内，以确保气流分布的均匀性。
出气口3131的排布方式具体可参考进气口3121的排布方式。具体来说，底壁上分布有沿第一径向X依次间隔设置的多排出气口3131，每排出气口3131包括沿第二径向Y依次间隔设置的多个出气口3131。换言之，出气口3131在匀流腔311的底壁上也呈网格型排布。其中，多排出气口3131具体可沿第一径向X均匀分布，多列出气口3131具体可沿第二径向Y均匀分布。这样，出气口3131在底壁上均匀分布且孔径相同，以便于使工艺气体能够沿匀流腔311的底壁均匀的喷射至晶圆200表面，确保工艺气流的分布均匀性。
可理解，进气管316和出气管317沿匀流腔311的轴向Z延伸时，进气管316的排布方式与进气口3121的排布方式相同，出气管317的排布方式与出气口3131的排布方式相同。具体的，在图9所示的示例中，进气管316沿第一径向X排列成十排、同时沿第二径向Y排列成十列，出气管317沿第一径向X排列成九排、同时沿第二径向Y排列成九列。
在该实施方案的基础上，作为进一步的实施例，进气口3121和出气口3131在第一径向X和第二径向Y上均相互错开。这样，如图9所示，进气管316和出气管317也在第一径向X和第二径向Y上相互错开。
这样，进气管316气体流出端喷射出的工艺气体的流动路径，在匀流腔311的径向以及匀流腔311的轴向上均需发生改变，才能流向出气管317的气体流入端。如此，工艺气体通过匀流组件31的过程中的流动方向的改变次数增加，进一步增强了该匀流组件31的匀气效果，从而显著提高了气体分布均匀性及相应工艺效果的均匀性。
当然，上述进气管316和出气管317的排数和列数不限于上述数量，具体可根据需求和工况进行设计。
在一些实施例中，进气口3121的排布方式也可以为圆形阵列，即匀流腔311的顶壁上设有沿工艺腔室10的径向间隔设置的多圈进气口3121，且由匀流腔311的顶壁中心至顶壁边缘，各圈进气口3121逐渐增大，各圈的进气口3121的数量也逐渐增多，即匀流腔311顶壁的边缘区域的进气口3121更密集，这样有利于促使靠近工艺腔室10的边缘的进气管316的进气量与靠近工艺腔室10的中心的进气管316的进气量相当，进一步有效提升气流分布的均匀性。
在一些实施例中，匀流腔311上所有出气口3131在承载面上的正投影超出基座11的承载面承载的晶圆200的边缘，换言之，每个出气口3131在承载面上会形成一个正投影，在这些正投影中，大部分是位于晶圆200所在位置的内侧的，但是有一部分正投影是有部分区域或者全部区域是位于晶圆200所在位置的外侧。采用此方式，经过匀流腔311匀流后的工艺气体的喷射区域能够覆盖整个晶圆200，以确保喷射向晶圆200表面各区域的工艺气体的分布均匀性，从而可以提高晶圆各处工艺效果的一致性。
请继续参考图6和图8，上述匀流组件31具体可包括上基板312、下基板313、以及设置在上基板312与下基板313之间的第一结构环314、第二结构环315，上基板312、第一结构环314、第二结构环315和下基板313共同围成匀流腔311。
示例性地，第一总进气管20可以设有一个。
在第一总进气管20为一个时，半导体设备100可以为等离子体刻蚀设备，用于实现半导体等离子体刻蚀工艺，第一总进气管20用于向工艺腔室10内输送的工艺气体为等离子体。值得指出的是，等离子体不限于由远程等离子体源(Remote Plasma Source，简称RPS)提供，也可以为等离子刻蚀设备采用的感应耦合等离子体(Inductively Coupled Plasma，简称ICP)技术或者电容性耦合等离子体(Capacitively Coupled Plasma，简称CCP)技术产生。这样，等离子体刻蚀设备在刻蚀工艺中，匀流组件31能够使等离子体在工艺腔室10均匀扩散，以避免到达晶圆200中心的等离子体多、到达晶圆200边缘的等离子体少的问题，从而提高了刻蚀效果的均匀性及晶圆各处工艺结果的一致性。
在第一总进气管20为一个时，半导体设备100也可以为原子层沉积设备，用于实现原子层沉积工艺，第一总进气管20用于向工艺腔室10内输入的工艺气体为前驱体。具体的，在沉积工艺中，交替向第一总进气管20输送不同的前驱体。这样，原子层沉积设备在沉积工艺中，匀流组件31能够使前驱体在工艺腔室10均匀扩散，以避免到达晶圆200中心的前驱体浓度高、到达晶圆200边缘的前驱体浓度低的问题，从而提高晶圆各处沉积工艺结果的均匀性及一致性。
示例性地，第一总进气管20也可以设有多个，各个第一总进气管20所输送的前驱体可以不同。本实施例的半导体设备100具体可为原子层沉积设备，沉积工艺中可交替向各个第一总进气管20输送前驱体。
这样，一方面，各个第一总进气管20交替向工艺腔室10内通入前驱体时，每种前驱体均能得到匀流组件31的均匀分配后导向至晶圆200，使得前驱体分布均匀，另一方面，由于每个第一总进气管20用于单独输送一种前驱体，有利于避免不同前驱体共用第一总进气管20而导致第一总进气管20内发生化学气相淀积反应，进而有利于避免第一总进气管20内因产生反应副产物而产生颗粒并影响薄膜均匀性，以能够大幅提升沉积均匀性和工艺良率。
而且，这样设置还能有效避免第一总进气管20内产生反应副产物而影响第一总进气管20的流通截面积，确保不会降低该原子层沉积设备的工艺效率和产能。除此之外，还能有效避免缩短第一总进气管20的清洗周期，确保第一总进气管20的使用寿命及设备稼动率。
综合来看，本实施例提供的半导体设备100能够兼容多种半导体工艺类型，具有良好的工艺兼容性及拓展性，且工艺效果的均匀性及产品良率高。当然，该半导体设备100不限于为等离子体刻蚀设备或原子层沉积设备，也可以为其他CVD、PECVD等半导体设备。
为了进一步提高工艺均匀性，请参考图11，上述第一总进气管20的出气端连接有第一盖板21，第一盖板21覆盖住第一总进气管20出气端的端口，第一盖板21上设置有多个出口211，且第一总进气管20出气端的管壁上沿周向间隔设置有多个出口211，且管壁上的出口211的轴向与工艺腔室10的轴向Z垂直设置。示例性的，第一总进气管20的管壁上的多个出口211具体可沿第一总进气管20的周向均匀分布。
这样，工艺气体从第一总进气管20的出口211流至导气空间S1时，工艺气体可分成多股小气流，多股小气流中的部分沿工艺腔室10的轴向Z从第一盖板21上的出口211输运至导气空间S1内，其余部分沿工艺腔室10的径向从第一总进气管20的管壁上的出口211输运至导气空间S1内。
本实施例中，工艺气流从第一总进气管20的出口211流至导气空间S1的过程中，能够实现工艺气体在工艺腔室10的轴向Z和工艺腔室10的径向上扩散匀气，提高了工艺气体向工艺腔室10的边缘扩散的效果，从而提高工艺腔室10内的各处气体分布的均匀性。
如本实施例所公开的半导体设备100，请参阅图6，工艺腔室10内部还可以设有支撑环12，支撑环12与工艺腔室10的内壁固定连接，匀流组件31的底部固定设置在支撑环12上。这样，支撑环12能够起到支撑匀流组件31的作用，使得匀流组件31能够稳定的安装在工艺腔室10内。
其中，匀流腔311的下基板313可以固定搭接于支撑环12上。请结合图8和图10，匀流组件31的底部还可以设有避让环形槽318，支撑环12嵌装在避让环形槽318内，使得支撑环12不凸出于匀流组件31的底面。这样，支撑环12无需额外占用工艺腔室10沿轴向的空间。
在一些实施例中，匀流组件31还可以接地设置。具体的，可以将上基板312、下基板313、第一结构环314和第二结构环315中的任一者或多者接地设置。
通过将匀流组件31接地，本实施例的半导体设备100为自由基刻蚀设备时，工艺气体(例如CF4，NF3等氟基气体)经RPS、CCP或ICP等能量源的解离后形成电浆，电浆由进气口3121通入匀流组件31，电浆中的带电粒子(电子、带电离子体、基团及其他类型带电粒子)会在输运过程中进行复合并与进气管316管壁、出气管317管壁以及匀流腔311的顶壁、侧壁、底壁进行碰撞、吸附及中和从而被过滤掉，而电浆中不带电的自由基在匀流腔311内充分均匀扩散并可顺利通过匀流组件31，然后经出气口3131喷射至工艺空间S2内，并均匀喷射至晶圆200表面并进行各向同性刻蚀的工艺。这样，可有效避免电浆中的带电粒子对晶圆200表面轰击而造成的垂直方向上刻蚀及晶圆200表面材料损伤等问题，因此，该自由基刻蚀设备能够实现各向同性的自由基刻蚀，可用于自由基横向刻蚀工艺并保证工艺效果的一致性及均匀性。
值得注意的是，进气管316喷射出的工艺气体需改变流向才能输运至出气管317，此过程增加了带电粒子在输运过程中进行复合并与进气管316管壁、出气管317管壁以及匀流腔311的顶壁、侧壁、底壁进行碰撞、吸附及中和的几率，进而显著提高了匀流组件31对带电粒子的过滤效果，从而可进一步改善各向同性刻蚀工艺效果的均匀性及各处一致性。特别说明的是，对于解离后的电浆可与化学气体同时通入匀流组件31，进而实现对电浆中的带电粒子及基团的有效过滤及对自由基和化学气体的匀气效果，以满足特殊制程中同时进行自由基刻蚀及化学刻蚀工艺的要求。
结合上文描述的内容可知，在进气管316和出气管317具有弯折的实施例中，该半导体设备100在实现自由基刻蚀工艺时，电浆在进气管316内流动的过程中容易在进气管316的弯折处换向时与进气管316的管壁碰撞，这样有效增加了电浆中的带电粒子被中和实现过滤的可能性，提高了过滤效果。同理，电浆在出气管317内流动的过程中容易在出气管317的弯折处换向时与出气管317的管壁碰撞。
实施例二
本实施例与实施例一类似，主要区别在于进气管316以及出气管317与匀流腔311的连通方式不同。实施例一中匀流组件31中的进气管316的气体流出端和出气管317的气体流入端均被其内部通道贯穿，以实现与匀流腔311的连通，而在本实施例中，进气管316的气体流出端和出气管317的气体流入端均被封闭，进气管316的气体流出端的管壁上设有与匀流腔311连通的第一匀流通孔3161，出气管317的气体流入端的管壁上设有与匀流腔311连通的第二匀流通孔3171。
可理解，第一匀流通孔3161和第二匀流通孔3171的轴向均垂直于工艺腔室10的轴向Z。第一匀流通孔3161和第二匀流通孔3171均设有多个，多个第一匀流通孔3161具体可沿进气管316的周向均匀分布且间隔设置，多个第二匀流通孔3171具体可沿出气管317的周向均匀分布且间隔设置。
这样，半导体制备工艺中，进气管316喷射出的工艺气体沿工艺腔室10的径向通过第一匀流通孔3161进入匀流腔311内，工艺气体沿工艺腔室10的径向缓冲扩散同时沿工艺腔室10的轴向往上流动后，接着沿工艺腔室10的径向通过第二匀流通孔3171进入出气管317，之后从出气口3131喷射至工艺空间S2内。
本实施例的匀流组件31，通过在进气管316的管壁上设有第一匀流通孔3161以及出气管317的管壁上设有第二匀流通孔3171，不仅能使工艺气体改变流动方向，并在匀流腔311内实现缓冲扩散达到气压均衡，增强了匀流效果，还能在匀流腔311的径向上对工艺气体进行匀流，提高了工艺气体向工艺腔室10边缘扩散的均匀性。
这里，进气管316的气体流出端被封闭应当作广义理解。即可理解为进气管316的气体流出端与匀流腔311底壁固定连接而被封堵，或者，还可理解为进气管316内部的通道未贯穿进气管316的气体流出端。同理，出气管317的气体流入端与顶壁固定连接而被封堵，或者，出气管317内部的通道未贯穿出气管317的气体流入端。
本实施例中任一种半导体设备100可以为等离子体刻蚀设备，也可以为原子层沉积设备或PECVD设备、CVD设备、自由基刻蚀设备等。
需要说明的是，进气管316的气体流出端与匀流腔311的连通方式、出气管317的气体流入端与匀流腔311的连通方式可采用实施例一和实施例二中的任一种，只要进气管316的气体流出端位于出气管317的气体流入端的下方即可。
实施例三
本实施例与上述实施例一和实施例二类似，不同的是，实施例一和实施例二中进气装置30仅设有一个匀流组件31，本实施例中进气装置30设有多个匀流组件31且各个匀流组件31的匀流腔311互相连通。应理解，本实施例的各个附图中以匀流组件31设有两个，且匀流组件31的结构为实施例二中的结构为例进行示意，不应视为对本申请的限制。
请参阅图12，进气装置30包括层叠且间隔设置的多个匀流组件31。并且，进气装置30还包括设于任意两个相邻的匀流组件31之间且与两个该相邻的匀流组件31均连接的连接环32，连接环32与该两个相邻匀流组件31共同围成进气空间33。
进气装置30可设有N个匀流组件31，其中N≥2，且N为正整数，连接环32则设有N-1个，相应的，进气空间33的数量也为N-1。下文中为了方便清晰描述，将沿匀流腔311的轴向Z由上至下层叠设置的N个匀流组件31中的最贴近基座11的匀流组件31称为第二匀流组件31b，其余匀流组件31均称为第一匀流组件31a。其中，层叠设置的首个匀流组件31(也为第一匀流组件31a)最靠近工艺腔室10的上顶盖，层叠设置的首个匀流组件31(也为第一匀流组件31a)的顶壁与工艺腔室10上顶盖围成导气空间S1，任一第一总进气管20的出口211位于首个匀流组件31的进气口3121侧。第二匀流组件31b最靠近工艺腔室10的下底板，第二匀流组件31b的底壁与基座11之间形成有工艺空间S2。第二匀流组件31b固定搭接安装于支撑环12上，使得匀流组件31稳定安装于工艺腔室10内。为了避免支撑环12占用工艺腔室10沿其轴向Z的空间，N个匀流组件31中仅在第二匀流组件31b的底部设有避让环形槽318即可。
N＝2时，如图12所示，第一匀流组件31a的数量为一个，进气装置30具有一个进气空间33，第一匀流组件31a的出气口3131通过该进气空间33与第二匀流组件31b的进气口3121连通。
N＝3时，第一匀流组件31a设有两个，分别为首个第一匀流组件31a及次个第一匀流组件31a，且首个第一匀流组件31a设置在次个第一匀流组件31a的上方。首个第一匀流组件31a与次个第一匀流组件31a之间、次个第一匀流组件31a与第二匀流组件31b之间均形成进气空间33，首个第一匀流组件31a的出气口3131通过位于两个第一匀流组件31a之间的进气空间33与次个第一匀流组件31a的进气口3121连通，次个第一匀流组件31a的出气口3131通过次个第一匀流组件31a与第二匀流组件31b之间的进气空间33与第二匀流组件31b的进气口3121连通。
N＞3时，以此类推，本实施例在此不再一一列举。总的来说，各个匀流组件31的匀流腔311相互连通。
本实施例的进气装置30，通过配置多个匀流组件31，在工艺过程中，由第一总进气管20的出口211进入导气空间S1的工艺气体，从工艺腔室10的顶部至底部，依次经过层叠设置的各个匀流组件31的均匀分配后，从第二匀流组件31b的出气口3131喷射至工艺空间S2内，接着喷射至晶圆200表面进行膜层沉积或刻蚀工艺。这样，与实施例一以及实施例二相比，进气装置30设计多级匀流组件31来增加对工艺气体的匀流频次，从而能够显著提升工艺气流的匀气效果，提高工艺均匀性和工艺结果良品率。
还可理解，该进气装置30可应用于高集成度的半导体设备100。具体在于，高集成度的半导体设备100的工艺腔室10沿其径向上的尺寸通常较小，本实施例的进气装置30通过设计层叠且间隔分布的多个匀流组件31，使得进气装置30可实现大容积的设计，且每个匀流组件31均能有效对工艺气体进行匀流，因此，即便本实施例的进气装置30沿工艺腔室10的径向的尺寸较小，仍能确保对工艺气体进行有效的均匀分布。
在一些实施例中，对于任意相邻两个匀流组件31，其中一个匀流组件31的底壁上的出气口3131与相邻的另一个匀流组件31的顶壁上的进气口3121在第一径向X和第二径向Y上相互错开。
本实施例中，以匀流组件31设有两个为例，在实际应用时，从第一匀流组件31a的出气口3131流出的工艺气体喷射至进气空间33内，其流动方向需沿工艺腔室10的径向发生改变后才能流向第二匀流组件31b的进气口3121。这样，有助于提高工艺气体的扩散均匀性，显著提升匀流效果，从而可提高工艺结果的均匀性和工艺良品率。
当然，值得指出的是，本实施例提供的进气装置30中，多个匀流组件31中的任意一个也可以替换为采用实施例一中所介绍的匀流组件31。
需要说明的是，本实施例中第一总进气管20可以为一个或多个。在第一总进气管20为一个时，运用本实施例中任一种进气装置30的半导体设备100可以为等离子体刻蚀设备、也可以为原子层沉积设备或CVD设备、PECVD设备以及自由基刻蚀设备等。若半导体设备100为原子层沉积设备，在沉积工艺时，可交替的向第一总进气管20输送不同的前驱体。
第一总进气管20为多个时，各个第一总进气管20输送的工艺气体可以不同。运用本实施例中任一种进气装置30的半导体设备100可以为原子层沉积设备，在沉积工艺时，可交替的向各个第一总进气管20输送前驱体。
此外，多个匀流组件31中存在一个匀流组件31接地设置。本实施例的半导体设备100适用于自由基刻蚀设备，工艺气体通过接地设置的一个匀流组件31时，电浆中的带电粒子被过滤，不带电的自由基在匀流后喷射至晶圆200表面，以确保实现各向同性刻蚀。
或者，较佳的实施例中，接地设置的匀流组件31为多个，例如每个匀流组件31均接地设置。这样使得解离后的电浆依次经过层叠设置的各个匀流组件31后，不仅能够沿工艺腔室10的径向和轴向均匀扩散，还能进行多次过滤，提高了过滤效果。
实施例四
本实施例与实施例三类似，不同的是，实施例三中进气装置30上各个匀流组件31的匀流腔311互相连通，本实施例中进气装置30上各个匀流组件31的匀流腔311互不连通。应理解，本实施例的各个附图中匀流组件31设置有两个，且匀流组件31的结构为实施例二中的结构为例进行示意，不应视为对本申请的限制。
本实施例中，请参阅图13至图18，进气装置30还包括针对每一第一匀流组件31a设置的多个连通管34。连通管34的进气端与对应的第一匀流组件31a的出气口3131连接，连通管34的出气端穿过对应的第一匀流组件31a下方的所有匀流组件31，并暴露于第二匀流组件31b的出气口3131侧。
并且，进气装置30还包括至少一个第二总进气管35，第二总进气管35的进气端位于工艺腔室10外，第二总进气管35的出气端自工艺腔室10的顶部延伸至工艺腔室10内，且第二总进气管35的出气端与其中一个进气空间33连通。每一进气空间33对应连通至少一个第二总进气管35，与进气空间33对应的第二总进气管35贯穿位于进气空间33上方的其他匀流组件31并进入对应的进气空间33。
N＝2时，如图13至图18所示，进气装置30包括与第一匀流组件31a的多个出气口3131一一对应连接的多个连通管34，连通管34的数量与第一匀流组件31a的出气口3131的数量相等，所有连通管34贯穿进气空间33和第二匀流组件31b，连通管34的进气端与第一匀流组件31a的出气口3131连接，连通管34的出气端贯穿第二匀流组件31b的底壁并暴露于第二匀流组件31b的出气口3131侧。这样，连通管34的排布方式与第一匀流组件31a的出气口3131及出气管317的排布方式相同。
根据实施例一所描述的内容可知，匀流组件31的进气管316和出气管317呈网格型排布方式。
如图16、图19和图20所示，第一匀流组件31a的进气管316具体沿第一径向X排布成十排、同时沿第二径向Y排布成十一列，第一匀流组件31a的出气管317具体沿第一径向X排布成十一排、同时沿第二径向Y排布成十列。这里，需指出，图19中由短划线描绘的孔为第一匀流组件31a中出气管317的示意图形、由实线描绘的孔为第一匀流组件31a中进气管316的示意图形，相反的，图20中由短划线描绘的孔为第一匀流组件31a中进气管316的示意图形、由实线描绘的孔为第一匀流组件31a中出气管317的示意图形。
由于连通管34的排布方式与第一匀流组件31a的出气管317的排布方式相同，因此，请结合图16、图19至图21，连通管34也沿第一径向X排布成十一排、同时沿第二径向Y排布成十列。
第二匀流组件31b的进气管316和出气管317同样也呈网格型排布。根据图16、图22和图23所示的示例，第二匀流组件31b的进气管316具体沿第一径向X排布成十一排、同时沿第二径向Y排布成十一列，第二匀流组件31b的出气管317具体沿第一径向X排布成十排、同时沿第二径向Y排布成十列。这里，需指出，图22中由短划线描绘的孔为第二匀流组件31b中出气管317的示意图形、第二匀流组件31b中进气管316和连通管34的示意图形均为由实线描绘的孔，图23中由短划线描绘的孔为第二匀流组件31b的进气管316的示意图形、第二匀流组件31b的出气管317和连通管34的示意图形均为由实线描绘的孔。
请继续参阅图20至图23，容易理解的是，连通管34沿第一径向X的排数与第二匀流组件31b的进气管316的排数相等，各排连通管34与第二匀流组件31b的各排进气管316并排设置。与此同时，连通管34沿第二径向Y排布的列数与第二匀流组件31b的出气管317的列数相等，各列连通管34与第二匀流组件31b的各列出气管317并列设置。这样，确保各个连通管34贯穿第二匀流组件31b时，能够从第二匀流组件31b上相邻两排出气管317和相邻两列进气管316围成的空隙穿过，以免连通管34与第二匀流组件31b的出气管317或进气管316发生干涉。当然，各个连通管34也可以从第二匀流组件31b的相邻两排进气管316和相邻两列出气管317围成的空隙穿过。
此示例中，由第一总进气管20的出口211流出的工艺气体进入第一匀流组件31a，经过第一匀流组件31a匀气后，进入连通管34内，之后直接由连通管34的出气端输送至工艺空间S2。由第二总进气管35的出气端流出的工艺气体进入进气空间33，之后流进第二匀流组件31b内，经过第二匀流组件31b匀气后，由第二匀流组件31b的出气口3131喷射至工艺空间S2。
N＝3时，第一匀流组件31a设有两个，分别为首个第一匀流组件31a及次个第一匀流组件31a，且首个第一匀流组件31a设置在次个第一匀流组件31a的上方。首个第一匀流组件31a与次个第一匀流组件31a之间、次个第一匀流组件31a与第二匀流组件31b之间均形成进气空间33。进气装置30包括与首个第一匀流组件31a的多个出气口3131一一对应连接的多个连通管34、以及与次个第一匀流组件31a的多个出气口3131一一对应连接的多个连通管34。与首个第一匀流组件31a相连的多个连通管34贯穿两个第一匀流组件31a之间的进气空间33，且与首个第一匀流组件31a相连的多个连通管34的出气端穿过次个第一匀流组件31a以及第二匀流组件31b，以暴露于第二匀流组件31b的底部。与次个第一匀流组件31a相连的多个连通管34贯穿次个第一匀流组件31a与第二匀流组件31b之间的进气空间33和第二匀流组件31b，且与次个第一匀流组件31a相连的多个连通管34的出气端暴露于第二匀流组件31b的底部。
此示例中，由第一总进气管20的出口211流出的工艺气体，经过首个第一匀流组件31a匀气后，经由连通管34直接输送至工艺空间S2内。由两个第一匀流组件31a之间的进气空间33对应的第二总进气管35的出气端流出的工艺气体，经过次个第一匀流组件31a匀气后，经由连通管34直接输送至工艺空间S2内。由次个第一匀流组件31a与第二匀流组件31b之间的进气空间33对应的第二总进气管35的出气端流出的工艺气体，经过第二匀流组件31b匀气后，经由第二匀流组件31b的出气口3131喷射至工艺空间S2内。
N＞3时，以此类推，本实施例在此不一一列举。
总的来说，进气装置30设有多个匀流组件31，且进气装置30设有连通管34时，各个匀流组件31互不连通、相互独立。通过这样设置，各个匀流组件31能够单独对输送至其对应的匀流腔311内的工艺气体进行匀气。
而且，本实施例的进气装置30中，第二总进气管35还能与其所贯穿的匀流组件31固定连接，进而提高了进气装置30的结构可靠性。
上述进气空间33可以与多个第二总进气管35对应连通，也可以与一个第二总进气管35对应连通。
在图13和图15所示的示例中，第一总进气管20和第二总进气管35均为一个，运用本实施例的进气装置30的半导体设备100为原子层沉积设备时，可以交替的向第一总进气管20和第二总进气管35通入不同的前驱体。
具体的，请参阅图24，向第一总进气管20通入第一前驱体，第一前驱体由第一总进气管20的出口211流出至导气空间S1内，之后通过第一匀流组件31a的进气口3121进入对应的进气管316，从进气管316的气体流出端流至第一匀流组件31a的匀流腔311内，再沿经工艺腔室10的径向及轴向扩散匀气后流入出气管317内部，接着由出气管317对应的出气口3131流进该出气口3131对应的连通管34，之后沿连通管34流动至其第二匀流组件31b的出气口3131侧后喷射至工艺空间S2内，吹扫至晶圆200表面。第一前驱体的流动路径在图24中以实线箭头示出。
具体的，请参阅图25，向第二总进气管35通入第二前驱体，第二前驱体由第二总进气管35的出气端流出至进气空间33内，之后通过第二匀流组件31b的进气口3121进入对应的进气管316，从进气管316的气体流出端流至第二匀流组件31b的匀流腔311内部，再沿工艺腔室10的径向及轴向扩散匀气后流入出气管317内部，接着由出气管317对应的出气口3131喷射至工艺空间S2，吹扫至晶圆200表面。第二前驱体的流动路径在图25中以虚线箭头示出。
通过采用该设计，每个匀流组件31能够对一种前驱体进行匀气。与相关技术对比可知，本实施例中，不仅可避免不同前驱体共用同一第一总进气管20，还可避免不同前驱体共用同一匀流组件31进行匀流。由此，可有效避免不同前驱体共用同一匀流组件31而导致匀流组件31内发生化学气相淀积反应的问题，有利于避免匀流组件31内产生反应副产物而影响匀流均匀性，确保薄膜制备的质量及工艺效果一致性与均匀性。
在一些实施例中，请继续参阅图13和图15，上述第二总进气管35的出气端连接有第二盖板351，第二盖板351覆盖住第二总进气管35的出气端的端口，第二盖板351上分布有多个开孔352，且第二总进气管35的出气端的管壁上沿周向间隔设置有多个开孔352，则管壁上的开孔352的轴向与工艺腔室10的轴向Z垂直。其中，第二总进气管35的管壁上的多个开孔352具体可沿第二总进气管35的周向均匀分布。
这样，工艺气体从第二总进气管35的出气端流至进气空间33时，工艺气体可分成多股小气流，多股小气流中的部分沿工艺腔室10的轴向Z从第二盖板351上的开孔352进入至进气空间33内，其余部分沿工艺腔室10的径向从管壁上的开孔352进入至进气空间33内。
本实施例中，工艺气体从第二总进气管35的出气端流至进气空间33的过程中，不仅能够沿工艺腔室10的轴向Z匀气，还能沿工艺腔室10的径向扩散匀气，提高了工艺气体向工艺腔室10的边缘扩散的效果，进一步提高了气体分布均匀性和工艺效果的均匀性及一致性。
作为一种实施例，多个匀流组件31中每一匀流组件31均可接地设置，使得每一匀流组件31对通入其内部的工艺气体能够起到过滤作用。
可以理解的是，以上实施方式仅仅是为了说明本申请的原理而采用的示例性实施方式，然而本申请并不局限于此。对于本领域内的普通技术人员而言，在不脱离本申请的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本申请的保护范围。

Claims (15)

  1. 一种匀流组件，其特征在于，所述匀流组件内部具有匀流腔，所述匀流腔的顶壁上设有沿自身厚度方向贯穿所述顶壁的多个进气口，所述匀流腔的底壁上设有沿自身厚度方向贯穿所述底壁的多个出气口；
    所述匀流腔内部设有与所述多个进气口一一对应设置的多个进气管，以及与所述多个出气口一一对应设置的多个出气管；所述进气管的第一端与对应的进气口连接，所述进气管的第二端与所述匀流腔连通；所述出气管的第一端与对应的出气口连接，所述出气管的第二端与所述匀流腔连通；所述进气管的第二端位于所述出气管的第二端的下方。
  2. 根据权利要求1所述的匀流组件，其特征在于，所述进气管的第二端封闭，且所述进气管的第二端的管壁上沿周向间隔设置有多个第一匀流通孔；
    和/或，所述出气管的第二端封闭，且所述出气管的第二端的管壁上沿周向间隔设置有多个第二匀流通孔。
  3. 根据权利要求1所述的匀流组件，其特征在于，所述进气管内部的通道贯穿对应的所述进气管的第二端，且所述进气管的第二端靠近所述底壁并与所述底壁之间形成第一间隙；
    和/或，所述出气管内部的通道贯穿对应的所述出气管的第二端，且所述出气管的第二端靠近所述顶壁并与所述顶壁之间形成第二间隙。
  4. 根据权利要求3所述的匀流组件，其特征在于，在所述进气管的第二端与所述底壁之间形成第一间隙且所述出气管的第二端与所述顶壁之间形成第二间隙时，所述第一间隙和所述第二间隙在所述匀流腔的轴向上的尺寸均大于等于0.1mm且小于等于所述匀流腔的高度的二分之一。
  5. 根据权利要求1所述的匀流组件，其特征在于，所有所述进气管和所有所述出气管均沿所述匀流腔的轴向延伸；
    所述顶壁上分布有沿所述匀流腔的第一径向依次间隔设置的多排所述进气口，每排所述进气口包括沿所述匀流腔的第二径向依次间隔设置的多个所述进气口；或者，所述顶壁上沿所述匀流腔的径向间隔设置有多圈所述进气口，由所述顶壁的中心至边缘，各圈进气口的孔径逐渐增大，且各圈中进气口的数量逐渐增多；
    所述底壁上分布有沿第一径向依次间隔设置的多排所述出气口，每排所述出气口包括沿第二径向依次间隔设置的多个所述出气口；
    所述进气口和所述出气口在所述第一径向和所述第二径向上均相互错开；其中，所述第一径向、所述第二径向和所述匀流腔的轴向两两垂直。
  6. 根据权利要求1所述的匀流组件，其特征在于，所述匀流腔上所有所述出气口在半导体设备的基座的承载面的正投影超出所述承载面承载的晶圆的边缘。
  7. 一种进气装置，其特征在于，包括：
    一个或层叠且间隔设置的多个如权利要求1至6中任一项所述的匀流组件以及至少一个第一总进气管；
    当所述进气装置包括一个所述匀流组件时，所述第一总进气管的出口位于所述匀流组件的进气口侧；
    当所述进气装置包括多个所述匀流组件时，所述第一总进气管的出口位于沿匀流腔的轴向由上至下层叠设置的首个所述匀流组件的进气口侧。
  8. 根据权利要求7所述的进气装置，其特征在于，当所述进气装置包括多个所述匀流组件时，所述进气装置还包括：
    设于任意相邻两个所述匀流组件之间且与该相邻两个所述匀流组件均连接的连接环，所述连接环与该相邻两个所述匀流组件共同围成进气空间。
  9. 根据权利要求8所述的进气装置，其特征在于，以沿所述匀流腔的轴向由上至下层叠设置的多个所述匀流组件中的最后一个所述匀流组件为第二匀流组件，其余所述匀流组件均为第一匀流组件；
    所述进气装置还包括：至少一个第二总进气管以及针对每一所述第一匀流组件设置的多个连通管；
    且所述连通管的进气端与对应的所述第一匀流组件的出气口连接，所述连通管的出气端穿过位于对应的所述第一匀流组件下方的所有所述匀流组件而暴露于所述第二匀流组件的出气口侧；
    每一所述进气空间对应连通至少一个所述第二总进气管；与所述进气空间对应的所述第二总进气管贯穿位于所述进气空间上方的其他匀流组件进入对应的所述进气空间。
  10. 根据权利要求9所述的进气装置，其特征在于，每一所述进气空间对应一个所述第二总进气管。
  11. 根据权利要求9所述的进气装置，其特征在于，当所述进气装置包括两个所述匀流组件时，所述进气空间为一个，所述连通管的数量与所述第一匀流组件的出气口的数量相同；
    所述连通管贯穿所述进气空间和所述第二匀流组件，且所述连通管的进气端与所述第一匀流组件的出气口连接，所述连通管的出气端暴露于所述第二匀流组件的出气口侧。
  12. 根据权利要求9至11中任一项所述的进气装置，其特征在于，所述第一总进气管的出气端连接有第一盖板，所述第一盖板覆盖住所述第一总进气管的出气端的端口，所述第一盖板上分布有多个出口，所述第一总进气管的出气端的管壁上沿周向间隔设置有多个出口；
    和/或，所述第二总进气管的出气端连接有第二盖板，所述第二盖板覆盖住所述第二总进气管的出气端的端口，所述第二盖板上分布有多个开孔，所述第二总进气管的出气端的管壁上沿周向间隔设置有多个开孔。
  13. 一种半导体设备，其特征在于，包括：
    工艺腔室，内部设有基座，所述基座具有用于承载晶圆的承载面；以及
    权利要求7至12中任一项所述的进气装置，其中，所述匀流组件位于所述工艺腔室内，所述匀流组件与所述基座相对；所述第一总进气管的进气端位于所述工艺腔室外，所述第一总进气管的出气端位于所述工艺腔室内。
  14. 根据权利要求13所述的半导体设备，其特征在于，还包括设置在所述工艺腔室内部的支撑环，所述支撑环与所述工艺腔室的内壁固定连接；
    当所述进气装置包括一个所述匀流组件时，所述匀流组件的底部固定设置在所述支撑环上；
    当所述进气装置包括多个所述匀流组件时，沿所述匀流腔的轴向由上至下层叠设置的多个所述匀流组件中最后一个所述匀流组件为第二匀流组件，所述第二匀流组件的底部固定设置在所述支撑环上。
  15. 根据权利要求13或14所述的半导体设备，其特征在于，所述进气装置上存在至少一个所述匀流组件接地设置。
PCT/CN2024/137732 2023-12-19 2024-12-09 匀流组件、进气装置及半导体设备 Pending WO2025130673A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202311746497.7A CN117438277B (zh) 2023-12-19 2023-12-19 匀流组件、进气装置及半导体设备
CN202311746497.7 2023-12-19

Publications (1)

Publication Number Publication Date
WO2025130673A1 true WO2025130673A1 (zh) 2025-06-26

Family

ID=89551906

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2024/137732 Pending WO2025130673A1 (zh) 2023-12-19 2024-12-09 匀流组件、进气装置及半导体设备

Country Status (2)

Country Link
CN (1) CN117438277B (zh)
WO (1) WO2025130673A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114743903B (zh) * 2022-05-25 2025-08-26 北京北方华创微电子装备有限公司 进气装置及半导体工艺设备
CN117438277B (zh) * 2023-12-19 2024-04-12 北京北方华创微电子装备有限公司 匀流组件、进气装置及半导体设备
CN117845193B (zh) * 2024-03-08 2024-06-04 南京原磊纳米材料有限公司 一种多层衬底原子层沉积装置
CN118571806B (zh) * 2024-08-02 2024-10-18 无锡邑文微电子科技股份有限公司 一种碳化硅半导体材料热处理设备
CN121344568A (zh) * 2025-12-17 2026-01-16 北京北方华创微电子装备有限公司 承载装置、半导体工艺腔室及半导体工艺设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105331953A (zh) * 2014-07-23 2016-02-17 北京北方微电子基地设备工艺研究中心有限责任公司 进气装置以及半导体加工设备
CN108677167A (zh) * 2018-06-27 2018-10-19 沈阳拓荆科技有限公司 半导体镀膜设备的喷淋装置、化学气相沉积设备及其操作方法
CN113808899A (zh) * 2020-06-17 2021-12-17 江苏鲁汶仪器有限公司 一种应用于等离子体处理装置中的高均匀性气路系统
CN117438277A (zh) * 2023-12-19 2024-01-23 北京北方华创微电子装备有限公司 匀流组件、进气装置及半导体设备

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050011459A1 (en) * 2003-07-15 2005-01-20 Heng Liu Chemical vapor deposition reactor
CN101768733A (zh) * 2008-12-31 2010-07-07 北京北方微电子基地设备工艺研究中心有限责任公司 气体分配装置和等离子体加工设备
CN102420120B (zh) * 2011-11-04 2016-08-03 中国科学院微电子研究所 一种进气结构
CN108091587B (zh) * 2016-11-21 2021-01-29 北京北方华创微电子装备有限公司 一种工艺腔室及半导体装置
CN116334590A (zh) * 2017-04-11 2023-06-27 北京北方华创微电子装备有限公司 反应腔室的进气机构、反应腔室及外延生长设备
US11049719B2 (en) * 2017-08-30 2021-06-29 Applied Materials, Inc. Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal
CN207775349U (zh) * 2018-01-22 2018-08-28 淮安澳洋顺昌光电技术有限公司 化学气相沉积反应腔气体匀流系统
CN208917306U (zh) * 2018-09-11 2019-05-31 北京北方华创微电子装备有限公司 固体前驱体蒸汽的稳压和纯化装置以及ald沉积设备
CN111101117B (zh) * 2018-10-29 2022-07-22 北京北方华创微电子装备有限公司 匀气装置和半导体处理设备
US11814716B2 (en) * 2019-11-27 2023-11-14 Applied Materials, Inc. Faceplate having blocked center hole
CN111364021B (zh) * 2020-01-22 2022-07-22 北京北方华创微电子装备有限公司 一种工艺腔室
JP7226351B2 (ja) * 2020-01-22 2023-02-21 株式会社デンソー 弁装置
CN111270221B (zh) * 2020-04-03 2022-07-22 北京北方华创微电子装备有限公司 半导体设备中的气体分配器和半导体设备
CN111996590B (zh) * 2020-08-14 2021-10-15 北京北方华创微电子装备有限公司 一种工艺腔室
CN113337810B (zh) * 2021-05-26 2022-04-22 北京北方华创微电子装备有限公司 内衬装置及半导体加工设备
CN114171377B (zh) * 2021-11-17 2025-06-13 拉普拉斯新能源科技股份有限公司 一种新型扩散方法
CN114171365B (zh) * 2021-12-10 2024-05-17 北京北方华创微电子装备有限公司 匀流装置、工艺腔室及半导体工艺设备
TWI818507B (zh) * 2022-01-12 2023-10-11 大陸商北京北方華創微電子裝備有限公司 半導體製程設備及其承載裝置
CN217214636U (zh) * 2022-03-29 2022-08-16 北京北方华创微电子装备有限公司 半导体工艺腔室
CN114893477A (zh) * 2022-06-01 2022-08-12 北京北方华创微电子装备有限公司 半导体工艺设备及其匀气装置
CN218089791U (zh) * 2022-09-22 2022-12-20 常州银河电器有限公司 一种管式匀流器
CN117219701A (zh) * 2023-09-04 2023-12-12 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105331953A (zh) * 2014-07-23 2016-02-17 北京北方微电子基地设备工艺研究中心有限责任公司 进气装置以及半导体加工设备
CN108677167A (zh) * 2018-06-27 2018-10-19 沈阳拓荆科技有限公司 半导体镀膜设备的喷淋装置、化学气相沉积设备及其操作方法
CN113808899A (zh) * 2020-06-17 2021-12-17 江苏鲁汶仪器有限公司 一种应用于等离子体处理装置中的高均匀性气路系统
CN117438277A (zh) * 2023-12-19 2024-01-23 北京北方华创微电子装备有限公司 匀流组件、进气装置及半导体设备

Also Published As

Publication number Publication date
CN117438277A (zh) 2024-01-23
TW202530474A (zh) 2025-08-01
CN117438277B (zh) 2024-04-12

Similar Documents

Publication Publication Date Title
WO2025130673A1 (zh) 匀流组件、进气装置及半导体设备
CN100336165C (zh) 用于半导体处理系统的注气装置
JP6250311B2 (ja) 基板処理システム及び原子層蒸着システム
JP7479808B2 (ja) 基板処理装置
JP7520868B2 (ja) 基板処理チャンバ用のリッドアセンブリ装置及び方法
CN114174554B (zh) 半导体处理腔室及清洁半导体处理腔室的方法
US20220051910A1 (en) Showerhead With Interlaced Gas Feed And Removal And Methods Of Use
CN117845193B (zh) 一种多层衬底原子层沉积装置
WO2025130628A1 (zh) 工艺腔室及其进气组件
CN115537779B (zh) 气体输送结构及气相沉积设备
TWI916110B (zh) 勻流組件、進氣裝置及半導體設備
JP7336841B2 (ja) 気相成膜装置
CN104264128A (zh) 一种用于mocvd反应器的格栅式气体分布装置
JP2023046391A (ja) ガス分配のためのシステムおよび装置
JP2020510307A (ja) 流動性ｃｖｄのためのディフューザー設計
TWI847159B (zh) 半導體製造設備
US20210222301A1 (en) Thin film forming apparatus and radical unit for forming thin film
KR102208609B1 (ko) 화학 기상 증착용 샤워 헤드 및 이를 구비한 증착 장치
CN117127167B (zh) 一种装置和加工方法
US20230064637A1 (en) Clamped dual-channel showerhead
TW202410257A (zh) 半導體處理設備
CN121593027A (zh) 混气装置及半导体工艺设备
TW201832272A (zh) 用於半導體製程之氣體噴射器及成膜裝置
KR200266070Y1 (ko) 튜브의 내부에 공정 가스를 공급해서 공정을 진행하는반도체 제조장치
CN121023474A (zh) 用于半导体工艺设备的喷淋头和半导体工艺装备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24906157

Country of ref document: EP

Kind code of ref document: A1