Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

• This disclosure relates to a semiconductor substrate assembly and a method for manufacturing the same.
• semiconductor electronic circuits have a multi-layer stacking structure in which two or more layers are stacked. Here, electrical connections are formed between wafers, between wafers and chips, and between chips and interposers. Alternatively, semiconductor electronic circuits have a three-dimensional structure in which wafers or chips are stacked. This forms, for example, a memory module, which can increase the access bandwidth of semiconductor memories. Alternatively, wafer-to-wafer bonding is also used in power semiconductors.
• a bonding structure or bond includes a first substrate having a first bonding surface with a first signal carrying metal region and a first ground metal region insulated from the first signal carrying metal region, and a second substrate bonded to the first substrate, having a second bonding surface with a second signal carrying metal region and a second ground metal region insulated from the second signal carrying metal region.
• Methods of bonding the first and second substrates are also provided.
• the first signal carrying metal region and the second signal carrying metal region are bonded together.
• the first ground metal region and the second ground metal region are bonded together.
• a ground metal region is disposed to surround the signal carrying metal region.
• a joint structure comprising: i) a first substrate having a first bonding surface, The first joining surface is a plurality of first signal transmission pads arranged in an array; a plurality of first dummy pads arranged in a similar array on the first bonding surface other than the portion on which the plurality of first signal pads are arranged; and a first insulating surface; having a plurality of first metal pads, including the plurality of first signal transmission pads and the plurality of first dummy pads, are arranged in an array generally uniformly across substantially the entirety of the first bonding surface, and each of the plurality of first metal pads is surrounded by a first insulating surface; The first dummy pads are connected to a power supply or a ground.
• the second joining surface is a plurality of second signal transmitting pads arranged in an array; a plurality of second dummy pads arranged in a similar array on the second bonding surface other than the portion on which the plurality of second signal pads are arranged; and a second insulating surface; having a plurality of second metal pads including the plurality of second signal transmission pads and the plurality of second dummy pads are substantially uniformly arranged in an array across substantially the entire second bonding surface, and each of the plurality of second metal pads is surrounded by a second insulating surface; The second dummy pads are connected to a power supply or a ground.
• a second substrate Equipped with each of the first signal-transmitting metal pads is bonded to each of the second signal-transmitting metal pads; and each of the first dummy pads is bonded to each of the second dummy pads.
• a bonding structure is provided, as well as a method for bonding the first and second substrates.
• the first dummy pads are arranged to surround the first signal transmission pads, and/or the second dummy pads are arranged to surround the second signal transmission pads.
• one or at least one of the first dummy pads and the second dummy pads are connected to a power source or ground.
• the first metal pads and the second metal pads have a rounded shape.
• the first metal pads include a first wiring metal region, and/or the second metal pads include a second wiring metal region.
• the first signal transmission pads include a first differential signal plus metal region and a first differential signal minus metal region, and/or the second signal transmission pads include a second differential signal plus metal region and a second differential signal minus metal region.
• the first insulating surface and the second insulating surface are bonded.
• At least a portion of the first metal pads and the second metal pads have metal regions configured to suppress transmission of electromagnetic noise in a direction perpendicular to the first and second bonding surfaces.
• a joint structure includes: A first substrate, a pair of a first differential signal plus metal region and a first differential signal minus metal region; and a first plane metal region formed surrounding the pair of the first differential signal plus metal region and the first differential signal minus metal region; a first substrate having a first bonding surface having a first bonding surface having a second bonding surface, a pair of a second differential signal plus metal region and a second differential signal minus metal region; and a second plane metal region formed surrounding the pair of the second differential signal plus metal region and the second differential signal minus metal region; a second substrate having a second bonding surface having Equipped with the first differential signal plus metal region and the second differential signal plus metal region are joined; the first differential signal minus metal region and the second differential signal minus metal region are bonded together; and the first plane metal region and the second plane metal region are bonded together.
• a joint structure is provided.
• the technology disclosed herein can, for example, achieve a mechanically strong joint or a highly reliable joint. Or, for example, it can maintain good high-speed signal transmission characteristics within an electronic circuit. Furthermore, it can construct an electronic circuit, module, or system having such a three-dimensional structure.
• FIG. 1A is a cross-sectional view that typically illustrates the structure of a pair of substrates to be bonded in accordance with one embodiment
• FIG. 1B is a cross-sectional view that typically illustrates the structure of a substrate bonded body produced by bonding the pair of substrates.
• FIG. 2A is a cross-sectional view that shows a schematic structure of a pair of substrates to be bonded according to one embodiment
• FIG. 2B is a cross-sectional view that shows a schematic structure of a substrate assembly produced by bonding the pair of substrates.
• FIG. 1 is a cross-sectional view illustrating a schematic structure of a substrate assembly including three substrates according to one embodiment.
• FIG. 1 is a cross-sectional view illustrating a schematic structure of a substrate assembly including three substrates according to one embodiment.
• FIG. 2 is a perspective view showing a schematic structure of a substrate used in a substrate assembly according to one embodiment.
• FIG. 2 is a top view illustrating a schematic configuration of a bonding surface of a substrate according to an embodiment.
• FIG. 2 is a top view illustrating a schematic configuration of a bonding surface of a substrate according to an embodiment.
• FIG. 2 is a top view illustrating a schematic configuration of a bonding surface of a substrate according to an embodiment.
• FIG. 2 is a top view illustrating a schematic configuration of a bonding surface of a substrate according to an embodiment.
• FIG. 2 is a top view illustrating a schematic configuration of a bonding surface of a substrate according to an embodiment.
• FIG. 2 is a top view illustrating a schematic configuration of a bonding surface of a substrate according to an embodiment.
• FIG. 2 is a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• 11 is a graph showing transmission characteristics and reflection characteristics obtained by a simulation.
• 1A and 1B are a top view and a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• 1A and 1B are a top view and a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• 1A and 1B are a top view and a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• 1A and 1B are a top view and a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• 1A and 1B are a top view and a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• 1A and 1B are a top view and a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• 1A and 1B are a top view and a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• 1A and 1B are a top view and a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• FIG. 1A and 1B are a top view and a perspective view illustrating a structure of a substrate assembly used in a simulation according to one example.
• 11 is a graph showing noise transmission characteristics of each embodiment by simulation.
• FIG. 1 is a top view illustrating a structure of a substrate assembly used in a simulation, according to some examples. 11 is a graph showing noise transmission characteristics of each embodiment by simulation.
• FIG. 1 is a top view illustrating a structure of a substrate assembly used in a simulation, according to some examples. 11 is a graph showing noise transmission characteristics of each embodiment by simulation.
• FIG. 1 is a cross-sectional view that illustrates a schematic structure of a substrate according to a conventional technique.
• FIG. 1 is a cross-sectional view that illustrates a schematic structure of a substrate according to a conventional technique.
• FIG. 1 is a cross-sectional view that illustrates a schematic structure of a substrate according to a conventional technique.
• FIG. 2 is a cross-sectional view illustrating a schematic structure of a substrate according to an embodiment.
• FIG. 2 is a top view illustrating a schematic structure of a wafer substrate according to an embodiment, for explaining propagation of a bonding wave.
• 1A to 1C are schematic cross-sectional views of substrates for explaining a method for bonding a pair of substrates according to an embodiment of the present invention.
• substrate generally refers to a flat plate of material, either semiconductor or insulator. However, this term should not be interpreted in a limiting manner. Substrate should be interpreted broadly to refer to a structure on which one or more materials or layers of materials may be deposited. Substrate may include one or more layers of material deposited thereon. Substrate may include, for example, but not limited to, a wafer or chip including one or more layers of material. On which a dielectric layer, a metal layer, etc. are deposited. Substrate may have a flat plate shape having a substantially constant thickness in two-dimensional surface directions. However, the shape of the substrate is not limited to a flat plate. Substrate may have a three-dimensional shape.
• the substrate may be a chip, a wafer, an element, a module, etc.
• the substrate may be a printed circuit board (PCB), an interposer, or an interposer substrate, etc.
• the substrate may be a single-sided, double-sided, or multi-layer PCB or interposer.
• the substrates to be bonded may be of the same type or may be substrates of different types or categories. For example, chip to chip, wafer to wafer, or chip to wafer may be bonded. For example, three or more substrates may be bonded.
• one or more interposer substrates may be bonded to multiple semiconductor chips so as to be sandwiched between them.
• the substrate has a bonding surface.
• the bonding surface may be defined as a surface or surface area that is bonded to another substrate.
• the bonding surface may have a metallic region that is substantially made of a conductive material.
• the bonding surface may have a non-metallic region that is substantially made of a non-conductive material.
• the bonding surface may have a metallic region and a non-metallic region.
• the term "metal region” generally refers to a surface region formed on a surface or joining surface of a substrate and consisting essentially of a conductive material. In some embodiments, the metal region may be defined with respect to a dimension perpendicular to the surface of the substrate.
• the surface (top surface) of the metal region may be flat.
• the flat surface of the metal region may be substantially parallel to the bonding surface.
• the surface of the metal region may be curved or uneven.
• the top surface of the metal region may be configured to be bonded to another substrate.
• the top surface of the metal region may be configured to protrude beyond the top surface of a non-metal region provided on the same bonding surface.
• the top surface of the metal region may have substantially the same height as the top surface of a non-metal region provided on the same bonding surface.
• the metal region may be connected to a through electrode (sometimes referred to as a through-silicon via in this specification, regardless of whether the substrate material is primarily Si) that partially or completely penetrates the substrate.
• the metal region may be connected to an extraction electrode that is disposed along the substrate surface or that passes through the substrate and leads to an end portion.
• metal as used herein generally refers to a conductive material unless otherwise specified.
• a “metal” may consist essentially of or include a metallic material, a non-metallic material, or a mixture thereof.
• the conductive material may be, for example, but not limited to, a material that is used or can be used as a semiconductor wiring material.
• the metallic material (hereinafter, sometimes referred to as “metal”) may be selected from the group consisting of aluminum (Al), copper (Cu), cobalt (Co), ruthenium (Ru), silver (Ag), and gold (Au), or a part of the group.
• the metallic material may be other metals.
• the metallic material may be a mixture or alloy of any of a plurality of them.
• the conductive material may be a non-metallic conductive material.
• the conductive material may consist of or include, for example, but not limited to, carbon (C).
• the carbon material may include, for example, but not limited to, multi-layer graphene (MLG), carbon nanotubes (CNT), etc.
• the substrate may have a signal carrying metal region and a ground metal region on its mating surface.
• signal-transmitting metal region refers to a metal region in the joint that is used for transmitting signals.
• a plurality of signal-transmitting metal regions may be disposed on the joint surface.
• signals are transmitted through the signal-transmitting metal regions.
• the joint may have a high-speed signal transmission structure in the GHz and THz bands and a function capable of handling 10 W to 1000 W.
• the joint may be a connection structure used in information processing devices.
• the signal-transmitting metal region may comprise at least one signal-transmitting metal region for transmitting an analog signal.
• the signal-transmitting metal region may comprise at least one signal-transmitting metal region for transmitting a digital signal.
• the signal-transmitting metal region may comprise at least one analog-signal-transmitting metal region and at least one digital-signal-transmitting metal region in the same interface.
• ground metal area refers to a metal area in the joint that is connected to, for example, ground and a power source and is not intended for signal transmission.
• a "ground metal area” may be defined as a metal area other than a signal transmission metal area. Multiple ground metal areas may be disposed on the joint surface. The ground metal area may be connected to the ground of the joint. A "ground metal area” may include a narrow ground metal area connected to ground.
• a "ground metal area” may include a power metal area connected to a power source. The power source provides power to electronic elements within the joint or to which the joint is connected. In some embodiments, the ground metal area may be connected or configured to be connected to either ground or a power source in the joint.
• the ground metal area may be electrically connected or configured to be connected to a power source.
• the power source may be used to drive an electronic element that outputs or receives a signal transmitted through the joint structure.
• the power source may be electrically connected to the electronic element.
• the ground metal area may be connected to either polarity of the power source.
• the power source may include multiple power sources. Multiple power sources may be connected or configured to be connected to multiple ground metal regions.
• the ground metal area may have a function of heat conduction. Such a ground metal area may be referred to as a heat dissipation metal area.
• the heat dissipation metal area may be connected to thermal vias that penetrate the substrate. This may, for example, conduct heat generated in the device or substrate structure to the outside or cool them.
• the thermal vias may be connected to each other across multiple layers or substrates, or to heat dissipation metal areas of multiple layers or substrates.
• the heat dissipation metal area may be connected to a heat sink, such as through thermal vias.
• the heat sink may be located, for example, on the final layer (top or bottom layer) of the substrate structure.
• the heat dissipation metal area may be connected to or located within a stacked structure in the power device.
• the power device may include a heat dissipation metal area.
• the ratio (a/A) of the combined area (a) of the signal carrying metal regions and the ground metal regions to the area (A) of the interface surface on which they are disposed may be equal to or greater than any of the following values: 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95%. In some embodiments, the ratio (a/A) may be equal to or greater than 25%. In some embodiments, the ratio (a/A) may be equal to or greater than 30%. In some embodiments, the ratio (a/A) may be equal to or greater than 50%. In some embodiments, the ratio (a/A) may be equal to or greater than 60%. This ratio may vary from substrate to substrate or substrate surface to substrate surface within a single interface.
• the area of the ground metal region may be greater than the area of the first or second signal carrying metal region on the same interface.
• the bonding strength of the two bonded substrates can be sufficiently increased.
• sufficient strength can be obtained against thermal stress or the application of external forces (such as impact from a drop).
• the ground metal region and the signal carrying metal region may be insulated from each other.
• the ground metal region and the signal carrying metal region may be insulated within the joint surface.
• the ground metal region and the signal carrying metal region may be insulated from each other at all times throughout the joint.
• the ground metal region and the signal carrying metal region may be insulated by an insulating material disposed between them.
• the insulating material may form an insulating surface at the joint surface.
• the insulating surface may be configured to contact or be bonded to another substrate.
• the ground metal region and the signal carrying metal region may be arranged in a non-contact or non-contacting manner within the joint surface.
• the ground metal region and the signal carrying metal region may be insulated from each other by a gas or a substantial vacuum.
• the ground metal region and the signal carrying metal region may be spaced apart from one another within the interface or in the in-plane direction of the interface.
• the in-plane separation may be equal to or greater than any of the following values: 0.05 ⁇ m, 0.06 ⁇ m, 0.07 ⁇ m, 0.08 ⁇ m, 0.09 ⁇ m, 0.1 ⁇ m, 0.2 ⁇ m, 0.3 ⁇ m, 0.4 ⁇ m, 0.5 ⁇ m, 0.6 ⁇ m, 0.7 ⁇ m, 0.8 ⁇ m, 0.9 ⁇ m, 1 ⁇ m.
• the ground metal region may be arranged to surround the signal carrying metal region within the corresponding joint surface.
• the ground metal region may have metal material formed or disposed in a substantially gapless or planar manner across its entire area.
• the metal area of the ground metal region may be formed substantially solid across its entire area.
• the metallic material of the ground metal region may be formed in a portion of the region in terms of area.
• the ground metal region may have a metallic material unoccupied portion (also called a void or non-metallic material portion) in which no metallic material is disposed.
• the metallic material or metallic material unoccupied portion may be periodically disposed or formed in the whole or part of the ground metal region.
• the metallic material or metallic material unoccupied portion may be disposed or formed in a mesh pattern in the whole or part of the ground metal region.
• the area ratio of the non-metallic material portion within the ground metal region may be equal to or greater than any of the following values: 5%, 10%, 20%, 30%, 40%, 50%, 60%.
• the area ratio of the non-metallic material portion within the ground metal region may be equal to or less than any of the following values: 90%, 80%, 70%, 60%, 50%, 40%, 30%, 20%, 10%, or less.
• the substrate assembly or junction structure of the present disclosure may be connected to, configured to be connected to, or may include various electronic circuits, etc. within it.
• the electronic circuit may be an optoelectronic circuit (in this specification, an "optoelectronic circuit” or the like may simply be referred to as an "electronic circuit” or the like).
• the electronic circuit may include, for example, but is not limited to, an electronic element, an electronic circuit module, an electronic product, an electronic system, etc.
• the electronic element may include, for example, but is not limited to, a transistor (MOS, CMOS, FET, CMOS, etc.), an operational amplifier, a diode, a resistor, an inductor, a capacitor, a photocoupler, a transformer, a relay, etc.
• the electronic circuit may include one or both of a digital circuit and an analog circuit.
• the electronic circuit may be a digital circuit or element, or may be a logic circuit.
• the electronic circuit may be a logic circuit or an integrated circuit (IC) (e.g., SSI, MSI, LSI, VLSI, ULSI, WSI, SoC, CCD or CMOS image sensor, etc.).
• IC integrated circuit
• the electronic circuit may be a central processing unit (CPU), a graphic processing unit (GPU), etc.
• the electronic circuit may include, but is not limited to, gate circuits such as AND gates, OR gates, NOT gates, NAND gates, NOR gates, and ExOR gates; logic function blocks such as flip-flops, counters, registers, shift registers, latches, encoders/decoders, multiplexers/demultiplexers, adders, and comparators; circuits with amplification functions such as buffers and inverters; switches, multiplexers, oscillators, or phase-locked loops (PLLs), etc.
• gate circuits such as AND gates, OR gates, NOT gates, NAND gates, NOR gates, and ExOR gates
• logic function blocks such as flip-flops, counters, registers, shift registers, latches, encoders/decoders, multiplexers/demultiplexers, adders, and comparators
• circuits with amplification functions such as buffers and inverters
• the electronic circuit may be an analog circuit or element.
• Examples of electronic circuits include, but are not limited to, amplifier circuits, oscillator circuits, filter circuits, arithmetic circuits, impedance matching circuits, modulation circuits, power supply circuits, and high frequency circuits.
• Figure 1A shows a schematic of two substrates 110, 120 to be bonded together.
• the substrate 110 includes a ground metal region 111 and a signal transmission metal region 113 formed on the joint surface of a substrate body formed of a semiconductor or an insulator.
• the substrate 110 further includes a through electrode 112 connected to the ground metal region 111 and a through electrode 114 connected to the signal transmission metal region 113, which are formed to penetrate the substrate 110.
• the ground metal region 111 and the signal transmission metal region 113 are formed to protrude from a surface (insulating surface) 115 on the joint surface of the substrate body 110.
• the ground metal region 111 and the signal transmission metal region 113 are formed so that their surfaces are approximately the same height as the insulating surface 115 or the substrate body 110.
• the substrate 120 has a similar configuration to the substrate 110.
• the substrate 120 includes a ground metal region 121 and a signal transmission metal region 123 formed on the joint surface of a substrate body formed of a semiconductor or an insulator.
• the substrate 120 further includes a through electrode 122 connected to the ground metal region 121 and a through electrode 124 connected to the signal transmission metal region 123, which are formed to penetrate the substrate 120.
• the ground metal region 121 and the signal transmission metal region 123 are formed to protrude from a surface (insulating surface) 125 on the joint surface of the substrate body 120.
• the ground metal region 121 and the signal transmission metal region 123 are formed so that their surfaces are approximately the same height as the insulating surface 125 or the substrate body 120.
• the ground metal region 111 of the substrate 110 is bonded to the ground metal region 121 of the substrate 120, and the signal transmission metal region 113 of the substrate 110 is bonded to the signal transmission metal region 123 of the substrate 120.
• This bonding forms a bonding interface 150 between the metal regions.
• the ground metal region 111 and the through electrode 112 of the substrate 110 are electrically connected to the ground metal region 121 and the through electrode 122 of the substrate 120.
• This also results in bonding the substrates 110 and 120 to produce a substrate assembly 100.
• the insulating surface 115 of the substrate 110 and the insulating surface 125 of the substrate 120 are not in contact with each other or are not bonded to each other.
• the insulating surface 115 of the substrate 110 and the insulating surface 125 of the substrate 120 may not be in contact with each other or be bonded to each other, partially or entirely.
• a high-strength joining interface can be formed.
• the insulating surfaces of the substrates may be configured to contact or be bonded before, during or after the bonding process.
• Figure 2A shows a schematic of two substrates 210, 220 to be bonded.
• the substrate 210 includes a ground metal region 211 and a signal transmission metal region 213 formed on the joint surface of a substrate body formed of a semiconductor or an insulator.
• the substrate 210 of FIG. 2 further includes a through electrode 212 connected to the ground metal region 211 and a through electrode 214 connected to the signal transmission metal region 213, which are formed to penetrate the substrate 210.
• the ground metal region 211 and the signal transmission metal region 213 are formed to be substantially flush with a surface (insulating surface) 215 on the joint surface of the substrate body 210. In other words, the surfaces of the ground metal region 211, the signal transmission metal region 213, and the insulating surface 215 have substantially the same height in the substrate 210.
• the substrate 220 also has a similar configuration to the substrate 210.
• the ground metal region 211 of the substrate 210 is bonded to the ground metal region 221 of the substrate 220, the signal transmission metal region 213 of the substrate 210 is bonded to the signal transmission metal region 223 of the substrate 220, and the insulating surface 215 of the substrate 210 is bonded to the insulating surface 225 of the substrate 220.
• This bonding forms a bonding interface 250 between the metal regions.
• the insulating surface 215 of the substrate 210 and the insulating surface 225 of the substrate 220 are in contact with each other or bonded to each other.
• the insulating surface 215 of the substrate 210 and the insulating surface 225 of the substrate 220 are in contact with or bonded to each other, either partially or entirely.
• a bonding interface with higher strength can be formed.
• bonding of the insulating surfaces can occur even when the metal regions protrude relative to the insulating surface, as in FIG. 1.
• the metal regions may first contact the other substrate, and then or simultaneously, due to elastic or plastic deformation of the substrate, the insulating surface may contact the other substrate. This is more likely to occur when the insulating surface has a high bonding strength (e.g., is activated).
• the metal region may be recessed relative to the insulating surface (not shown). In other words, the metal region may be lowered relative to the insulating surface. In this case, the insulating surface contacts the other substrate. However, expansion due to heating may then cause the metal region to contact the other substrate. Alternatively, heating may cause atoms in the metal region to diffuse and reach the other substrate.
• ⁇ Embodiment 3 Multilayer structure 1>
• the substrate assembly 300 shown in Fig. 3 includes an upper substrate 310, a lower substrate 330, and an intermediate substrate 320 sandwiched between them. As shown in the first embodiment, the metal regions of each substrate protrude from the insulating surface at each bonding surface.
• the intermediate substrate 320 may be, for example, but is not limited to, an interposer substrate.
• a ground metal region 321a and a signal transmission metal region 323a are arranged on the upper surface of the intermediate substrate 320, and are respectively bonded to the ground substrate region 311 and the signal transmission metal region 313 of the upper substrate 310.
• a ground metal region 321b and a signal transmission metal region 323b are arranged on the lower surface of the intermediate substrate 320, and are respectively bonded to the ground substrate region 331 and the signal transmission metal region 333 of the lower substrate 330. This bonding forms bonding interfaces 350a, 350b between the metal regions.
• the substrate assembly 400 shown in Fig. 4 includes an upper substrate 410, a lower substrate 430, and an intermediate substrate 420 sandwiched between them. As shown in the second embodiment, the metal regions of each substrate are formed substantially flush with the insulating surface at each bonding surface. As in the third embodiment, the intermediate substrate 420 may be, for example, but not limited to, an interposer substrate.
• a ground metal region 421a, a signal transmission metal region 423a, and an insulating surface 425a are arranged, and are respectively bonded to the ground substrate region 411, the signal transmission metal region 413, and the insulating surface 415 of the upper substrate 410.
• a ground metal region 421b, a signal transmission metal region 423b, and an insulating surface 425b are arranged, and are respectively bonded to the ground substrate region 431, the signal transmission metal region 433, and the insulating surface 435 of the lower substrate 430.
• the ground metal region 411 and the through electrode 412 of the upper substrate 410, the ground metal region 421a, the through electrode 422, and the ground metal region 421b of the intermediate substrate 420, and the ground metal region 431 and the through electrode 432 of the lower substrate 430 are electrically connected.
• the signal transmission metal region 413 and the through electrode 414 of the upper substrate 410, the signal transmission metal region 423a, the through electrode 424 and the signal transmission metal region 423b of the intermediate substrate 420, and the signal transmission metal region 433 and the through electrode 434 of the lower substrate 430 are electrically connected.
• the insulating surfaces are bonded to other insulating surfaces.
• the upper substrate 410, the intermediate substrate 420, and the lower substrate 430 are bonded to form the substrate assembly 400.
• Example 1 Substrate structure
• a structure of a substrate 510 that can be used as an interposer is shown in Fig. 5.
• Fig. 5 is a perspective view of the substrate 510, and the insulating or semiconductor portion in the center is omitted to show the internal structure.
• the substrate 510 shown in FIG. 5 has a ground metal region 511a, a signal transmission metal region 513a, and a power supply metal region 515a on its top surface, and is configured to be bonded to the corresponding regions of the substrate to be bonded from the top surface. Furthermore, a power supply plane 515a-2 is arranged on the second layer from the top and is connected to the power supply metal region 515a on the top surface. Wiring 513a-2 connecting multiple signal transmission metal regions 513a is arranged on the second layer from the top. They are insulated from each other by organic insulator 517a.
• the ground metal region 511a is connected to the corresponding through electrode 512.
• the signal transmission metal region 513a is connected to the corresponding through electrode 514.
• the power supply metal region 515a is connected to the power supply plane 515a-2 and the corresponding through electrode 516.
• the substrate 510 shown in FIG. 5 further includes a ground metal region 511b, a signal transmission metal region 513b (not shown), and a power metal region 515b on its underside, and is configured to be bonded to corresponding regions of the substrate to be bonded from the underside.
• a power plane 515b-2 is disposed in the second layer from the bottom and is connected to the power metal region 515b on the underside. They are insulated from each other by an organic insulator 517b.
• the ground metal region 511b is connected to a corresponding through electrode 512.
• the signal transmission metal region 513b (not shown) is connected to a corresponding through electrode 514.
• the power metal region 515b is connected to a corresponding through electrode 516.
• the joint surface may have a digital signal transmission area and an analog signal transmission area, or it may have only one of them.
• Example 3 Joining surface configuration 1 6 illustrates an example of a configuration of a mating surface 600 with an analog signal transmission region 610 and a digital signal transmission region 650.
• FIG 6 may be used, for example but not limited to, for either an interposer or a PCB.
• the interface 600 has an analog signal transmission area 610 and a digital signal transmission area 650.
• the analog signal transmission region 610 includes an analog ground metal region 611 and an analog signal transmission metal region 613.
• a plurality of analog signal transmission metal regions (or pads) 613 are disposed.
• the analog ground metal region 611 is spaced apart from and surrounds the analog signal transmission metal regions 613.
• the analog ground metal region 611 is connected to ground (not shown).
• the analog signal transmission region 613 may be connected or configured to be connected to analog elements.
• the analog signal transmission region 613 may correspond to various pins, including, for example and without limitation, the following: Low noise amplifier (LNA) gate voltages (LNA_VDD), ground (LNA_GND), IN (LNA_IN) and NIN (LNA_NIN); Ring indicator (RI) gate voltage (RI_VDD) and ground (RI_GND); the transmission circuit (TX) gate voltage (TX_VDD), ground (TX_GND), and output differential pair OUT (TX_OUT) and NOUT (TX_NOUT); Switch (SW) Vdd (SW_VDD), ground (SW_GND), control differential pair (SW_CTL, NSW_CTL); A test refresh (RF) signal (RF_TST); Test Ground (TEST_GND); Clock signal (TCLK_IN);
• LNA Low noise amplifier
• LNA_VDD Low noise amplifier
• LNA_GND Low noise amplifier
• IN LNA_IN
• LNA_NIN Ring indicator gate voltage
• RI_VDD Ring indicator
• the digital signal transmission region 650 includes a digital ground metal region 651 and a digital signal transmission metal region 653. A plurality of digital signal transmission metal regions (or pads) 653 are arranged. The digital ground metal region 651 is spaced apart from the digital signal transmission metal regions 653 and is arranged to surround them. The digital ground metal region 651 is connected to a ground (not shown). The digital signal transmission metal region 653 may be connected or configured to be connected to digital elements. The digital signal transmission region 613 may correspond to various pins. They are divided into the following types according to the type of signal to be transmitted.
• Digital device (D) signal transmission area 661 digital device gate voltage (D_VDD) and ground (D_GND); Control signal transmission area 663: (REQ (Request to Send), AQ (Acquire to Send), ENABLE (Enable for signal)); High-speed bus signal transmission area 665: (Q/NQ (Output Signal/Negative output signal), D/ND (Input Signal/Negative input signal)); signal transmission area 667 to the adjacent ball grid array; Clock signal transmission area 669 (data clock (DCLK), timing circuit (TADJ), TX_VALID (Transmit Signal Valid), DPH (Data Phase timing), etc.); Serial communication signal transmission area 671 (TXD/NTXD); However, the groupings and types of the digital signal transmission areas 652 shown in FIG. 6 are shown by way of example, and these groups should not be interpreted as being limiting.
• Example 4 Joining surface configuration 2 7 illustrates an embodiment of a mating surface 700 configuration including a signal transmission metal region 710 and a ground transmission metal region 720.
• FIG 7 illustrates an embodiment of a mating surface 700 configuration that may be used, for example, but not limited to, on either an interposer or a PCB, such as on one side of a single ended pad.
• the signal-carrying metal region 710 shown in FIG. 7 is defined in the center 711 of the bonding surface 700.
• the signal-carrying metal region 710 is not formed as a single, continuous or solid region, but is formed individually as a pin 710.
• the signal-carrying metal region, pin 710 is connected or configured to be connected to the gate voltage (VDD) or ground (GND) of the device.
• the ground metal region 720 shown in FIG. 7 is defined around and surrounds the signal transmission metal region 710.
• the ground metal region 720 is not formed as a single, continuous or solid region, but is formed in a pin shape.
• the pin 720 which is a ground metal region, includes a metal region 721 for power and a metal region 723 for ground. They are connected or configured to be connected to a power source or a ground, respectively.
• FIG. 8 shows a bonding surface 800 according to an embodiment.
• the bonding surface 800 includes a plurality of chip regions 810.
• Each chip region 810 includes a ground metal region 811 and a transmission metal region 813.
• the wafer including the bonding surface 800 is cut by dicing along boundary lines 830 defined in a grid pattern on the bonding surface 800 at the boundaries of the chip regions.
• the boundary lines 830 shown by dashed lines in FIG. 8 are geometrically defined on the wafer and do not necessarily have to be physically prepared on the surface of the wafer.
• the bonding surface 800 shown in FIG. 8 includes a cutting metal region 820 including the boundary lines 830.
• the cutting metal region 820 may be connected to ground or configured to be connected to ground, or may not be connected to ground.
• FIG. 9 shows a bonding surface 900 according to an embodiment.
• the bonding surface 900 includes a plurality of chip regions 910. Each chip region 910 includes a transmission metal region 913.
• a wafer including the bonding surface 900 is cut by dicing along a boundary line 930 defined in a grid pattern on the bonding surface 900 at the boundary of the chip region.
• the bonding surface 900 shown in FIG. 9 includes a peripheral metal region 930 formed along the boundary line 930, and a non-metal region 940 formed to pass through the center of the bonding metal region 930 and include the boundary line 930.
• the boundary line 930 is defined inside or along this non-metal 940.
• the boundary line 930 is defined along the non-metal portion 940.
• the wafer is cut along the non-metal 940 of the peripheral metal region 920 and divided into a plurality of chip regions 910.
• the peripheral metal region 920 is connected to ground and functions as a ground metal region.
• the cut metal region 820 and the surrounding metal region 920 are not limited to the aspects shown in Figures 8 and 9, and may, for example, be connected or configured to be connected to ground, or may not be connected to ground.
• the cut metal region 820 and the surrounding metal region 920 also contribute to the bond. This can, for example, but not limited to, improve the bond strength and/or improve the signal transmission characteristics.
• both of the pair of substrates include a ground metal region (or a power metal region) and a signal carrying metal region.
• the corresponding metal areas are then brought into contact with corresponding areas of the other substrate. Electrical connections are made between selected metal areas.
• one substrate may not necessarily have metal areas corresponding to all metal areas of the other substrate.
• at least one substrate may have a ground metal area (or a power metal area) and a signal carrying metal area, and the other substrate may have at least one of them.
• One substrate may not necessarily have metal areas corresponding to all metal areas of the other substrate. The two substrates are joined in a manner that allows the necessary signal transmission between the two connected substrates.
• the surface of the metal region may be activated before contacting the substrate, or a surface activation treatment may be performed on the bonding surface. This can improve the bonding strength, for example, or provide sufficient strength at a low temperature. Furthermore, even if heating is performed after contact, the thermal energy can be suppressed.
• Surface activation processes may involve applying energy or energetic particles to surfaces such as metal regions, metallic materials, and the like (which are typically covered by oxides in air), non-metallic regions, insulating materials, and the like.
• the energetic particles may be generated by accelerating ions or neutral atoms of the gas particles or atoms used, or a mixture thereof, using a particle beam source such as an ion beam source or a fast atom beam (FAB) source.
• a particle beam source such as an ion beam source or a fast atom beam (FAB) source.
• the irradiation of the energetic particles may be performed using a plasma source.
• a particle beam source can be used to provide the particles with a predetermined kinetic energy.
• the particle beam source operates in a vacuum, for example, with a background pressure of 1 ⁇ 10 ⁇ 5 Pa (pascal) or less.
• a vacuum pump By operating a vacuum pump to draw a relatively high vacuum, the material removed from the surface of the metal region is efficiently pumped out of the atmosphere. This can prevent undesirable material from adhering to the exposed new surface.
• the particle beam source can apply a relatively high acceleration voltage, so that high kinetic energy can be imparted to the particles. It is therefore believed that the surface layer can be efficiently removed and the new surface can be activated.
• a fast atom beam source As a neutral atom beam source, a fast atom beam source (FAB, Fast Atom Beam) can be used.
• a fast atom beam source (FAB) typically generates a gas plasma, applies an electric field to the plasma, and extracts positive ions of ionized particles from the plasma and passes them through an electron cloud to neutralize them.
• the power supplied to the fast atom beam source (FAB) may be set to 1.5 kV (kilovolts) and 15 mA (milliamperes), or may be set to a value between 0.1 and 500 W (watts).
• the fast atom beam source FAB
• the fast atom beam source FAB
• a fast atom beam of argon (Ar) is irradiated for about 2 minutes, the oxides, contaminants, etc. (surface layer) on the surfaces to be joined can be removed, and a new surface can be exposed.
• a cold cathode ion source can be used as the ion beam source.
• the energetic particles may be or may include a noble gas.
• the noble gas may be argon or another noble gas.
• the energetic particles may be neutral atoms or ions, or even radical species, or even a mixture of these particles.
• the surface activation process may include exposure to electromagnetic radiation, such as ultraviolet light, a laser, etc.
• “Surface activation” refers to a treatment or process performed on surfaces that would not otherwise be substantially bonded or joined when brought into contact, such that the surfaces are brought into contact with each other after the treatment, etc., resulting in a desired or substantially effective bond.
• the laminate formed by bonding substrates after the surface activation treatment may or may not be subjected to heating or light treatment, etc.
• the removal rate of the surface layer may vary depending on the operating conditions of each plasma or beam source, the kinetic energy of the particles, or the irradiation of electromagnetic waves. Therefore, it is necessary to adjust each condition, including the processing time of the surface activation treatment.
• the processing time of the surface activation treatment may be set to the time at which the presence of oxygen or carbon in the surface layer can no longer be confirmed using a surface analysis method such as Auger electron spectroscopy (AES) or X-ray photoelectron spectroscopy (XPS), or a time longer than that.
• AES Auger electron spectroscopy
• XPS X-ray photoelectron spectroscopy
• the atmosphere of the substrate is evacuated to a vacuum or ultra-high vacuum, for example, an atmospheric pressure of 10 ⁇ 5 Pa or less (background pressure).
• a vacuum or ultra-high vacuum for example, an atmospheric pressure of 10 ⁇ 5 Pa or less (background pressure).
• background pressure 10 ⁇ 5 Pa or less
• the degree of vacuum during the surface activation step is lower than the background pressure, and can be, for example, about 10 ⁇ 1 Pa.
• the atmosphere can be considered to be in a vacuum state equivalent to the background pressure in terms of its characteristics, although the total pressure has decreased. Therefore, in this specification, the process from such surface activation to bonding is expressed as "without breaking the vacuum" or "activation in a vacuum”.
• Surface activation may, in some embodiments, refer to a treatment or step performed on the substrate or on the thin film after formation of the thin film, or in some embodiments, it may not. In some embodiments, surface activation may refer to or include keeping the bonding surface of the thin film active from the formation of the thin film. For example, surface activation may include forming the thin film in a vacuum and bonding the substrate without breaking the vacuum. An active surface may be formed in a vacuum and the substrates may be bonded while still active.
• Surface activation may be performed on the surface on which the thin film material is to be formed before the thin film is formed. This can, for example, increase the bonding strength between the substrate and the thin film.
• Bonding or laminating the substrates may include contacting the faying surfaces of the substrates with one another. In some embodiments, bonding or laminating the substrates may include contacting the faying surfaces of surface-activated substrates with one another.
• the surface-activated substrates may be bonded together in a vacuum, allowing the substrates to be bonded while retaining their activity.
• the substrate surface may be subjected to a hydrophilization treatment prior to bonding.
• the hydrophilization treatment may be performed as a separate treatment from the activation treatment.
• the hydrophilization treatment may be performed on the activated surface after the surface activation treatment.
• the hydrophilization treatment may be interpreted as a part of the surface activation treatment or as a part of the surface treatment.
• a water component is applied to the substrate after an activation treatment such as particle beam irradiation or plasma irradiation.
• the hydrophilization treatment may involve washing the substrate with water.
• the hydrophilization treatment may involve adding water vapor to the substrate atmosphere.
• the hydrophilization treatment may involve lowering the temperature of the substrate to allow water contained in the atmosphere near the substrate surface to adhere to the substrate surface by condensation.
• the hydrophilically treated substrates may be introduced into a vacuum for bonding.
• the vacuum water molecules that have adhered to the substrate surfaces due to the hydrophilic treatment evaporate.
• the amount of water remaining at the temporary bonding interface can be reduced. This allows the annealing temperature required for sufficient bonding to be lowered. Also, oxidation of the metal regions can be suppressed. Alternatively, the occurrence of voids at the bonding interface can be suppressed.
• force or pressure may be applied to the substrates from the side opposite the bonding surface or from a surface other than the bonding surface when the substrates are brought into contact. By applying pressure, it is possible to increase the degree of adhesion at the bonding interface, for example.
• force or pressure may be applied to the bonding surface or bonding interface.
• a force perpendicular to the bonding surface may be applied from the outside of the substrate.
• the substrates may be pressed or compressed when bonding the substrates.
• pressure may be applied so that the force is substantially uniform across the contacted bonding surfaces.
• pressure may be applied at different times to different surfaces of the contacted bonding surfaces.
• the strength of the force during pressure application may be constant over time or may be variable.
• Pressure may be applied at different times to different parts of the bonding surfaces. Pressure may be applied sequentially to the bonding surfaces by sliding a pressure device over the contacted substrates.
• the pressure device may have a roller-shaped pressure unit.
• the processes from surface activation of the bonding surface or the thin film on the bonding surface to contacting the substrate, from forming a metal oxide layer on the substrate on the bonding surface to contacting or bonding the pair of substrates may be performed consistently in a vacuum or low pressure atmosphere, or may be performed without breaking the vacuum or low pressure atmosphere.
• the atmosphere in a vacuum or low pressure may be an atmosphere in which the background air pressure is at least 10 ⁇ 5 Pa or lower.
• the substrate may be temporarily removed from the vacuum after the surface activation, and in that case, a dummy substrate may be temporarily bonded to the bonding surface to avoid exposing the bonding surface to the atmosphere, and after returning to the vacuum, the dummy substrate may be removed and the bonding surfaces may be contacted in a vacuum.
• the atmosphere in a vacuum or low pressure may include this.
• the bonded substrates may be subjected to a heat treatment.
• the bonded body may be subjected to a heat treatment.
• the entire bonded body may be heated.
• the bonded body may be irradiated with light or electromagnetic waves, such as a laser, to cause a reaction.
• a heat treatment may be performed after bonding a pair of substrates. After the temporary bonding, the heat treatment may be performed to obtain the desired bonding characteristics (strength, conductivity, etc.).
• a bond that does not reach the desired interface characteristics is referred to as a "temporary bond".
• a heat treatment may be performed after the temporary bonding.
• the bond of the metal region can be strengthened by the heat treatment.
• the heat treatment may be performed in an inert atmosphere.
• the inert atmosphere may be a vacuum, a nitrogen atmosphere, or a rare gas atmosphere such as argon or helium. Oxidation of the thin film material or materials within the substrate due to the heat treatment may be reduced or avoided.
• the heat treatment may be performed in an active atmosphere. For example, the heat treatment may be performed in ozone.
• the substrates may be pressurized or compressed during the heat treatment.
• a single-wafer heat treatment is typically performed.
• the substrate chuck of the bonding apparatus may be equipped with a heater. This allows the bonded body to be heat treated in the bonding apparatus following the temporary bonding.
• the heat treatment after bonding may be performed without pressure or pressure.
• Heat treatment without applying an external force to the bonded interface allows for batch processing, i.e., heat treatment of multiple bonded bodies at once, thereby improving productivity.
• the temporarily bonded bonded bodies may be removed from the bonding apparatus and introduced into an annealing furnace. In the annealing furnace, heat treatment can be performed in batches. In this specification, pressure-free heat treatment is referred to as "annealing".
• the bond strength of the bonded body may be equal to or greater than 2 J/m 2 , 3 J/m 2 , 4 J/m 2 etc.
• the bond strength may be higher than the breaking strength of at least one of the pair of substrates.
• the surfaces of the metal regions may be activated and bonded, and the insulating surfaces may not be bonded. In some embodiments, the surfaces of the metal regions may be activated and bonded, and the insulating surfaces may be bonded. The surfaces of the insulating surfaces may also be activated.
• Hybrid joining refers to a technique or method for joining a pair of joining surfaces that have a metal element for electrical connection, such as copper, and an insulating element, such as an oxide.
• the substrate surfaces are subjected to plasma treatment and hydrophilic treatment, and the substrates are temporarily bonded in the atmosphere. This bonds the insulating surfaces together.
• the metals are then bonded together by annealing. With this method, water molecules are present at the bonding interface during temporary bonding. As a result, annealing at high temperatures, for example 350 to 400 degrees Celsius (hereafter expressed in "°C"), is required to bond the metals together.
• a surface activation process using ion bombardment or atomic beam irradiation in an ultra-high vacuum background (e.g., 10 ⁇ 5 Pa or less) and a hydrophilization process (e.g., application of water vapor in the same chamber) may be performed, and the substrates may be temporarily bonded in a vacuum and then annealed.
• a hydrophilization process e.g., application of water vapor in the same chamber
• the bonding strength of the insulating surface was maintained and Cu was diffusion bonded by annealing at 400°C.
• this method there is no need to ensure strength by bonding the insulating surface, and it is possible to ensure both the conductivity and mechanical strength of Cu by bonding the Cu-Cu electrodes. Furthermore, strength can be further improved by bonding dummy pads. As a result, strong bonding of the insulating surface is no longer necessary.
• a surface activation process may be performed by ion bombardment or atomic beam irradiation in an ultra-high vacuum background (e.g., 10 ⁇ 5 Pa or less), and the substrates may be temporarily bonded in the vacuum without performing a hydrophilization process.
• annealing may be performed after this temporary bonding. The inventors have found that this allows the annealing temperature to be reduced to 200° C. or less. Furthermore, the inventors have found that sufficient bonding is possible even if the annealing temperature is reduced to 150° C. or less. This method has been found to be preferable to conventional hybrid bonding.
• surface activation may not be performed.
• the substrates may be brought into contact with one another and, while in contact, both substrates may be heated. Heating removes oxides or impurities, etc., present on the surface of the metal regions, allowing the metal to directly contact the other metal and form a strong bond. Even if the surfaces are activated, heat may be applied after contact or bonding.
• the insulator may contact the insulator or metal region of the other substrate during bonding.
• the insulator may contact the metal region at the same time.
• a substrate may be used in which the metal region is formed to protrude from the insulating surface. Even if a part of the metal region contacts the other substrate, a sufficient electrical and/or mechanical bond is not formed. However, a part of the insulator may contact the other substrate and bond thereto. If the insulator has a high surface activity, the bond of the insulator occurs first and the bonded area increases.
• the insulator may contact the other substrate first, and then the metal region may contact or bond thereto. In some embodiments, the insulator may contact the other substrate first, and then the metal region may contact or bond thereto.
• the insulating surface may be, for example, a fluorinated oxide, a compound containing Si-O-F, etc.
• the fluorination may be performed by exposure to a fluorine-containing liquid, vapor, or gas, or by introduction by ion implantation.
• the surface may be further terminated with NH2 groups.
• the surface may be, for example, exposed to an NH4OH solution at the bonding surface.
• Signal transmission characteristics 10 shows the structure of the substrate assembly 1000 used in the simulation.
• the substrate assembly 1000 is composed of three layers, and each layer has a plain ground (ground metal area) and a signal transmission pad disposed on the top and bottom surfaces.
• the layers are connected by a ground TSV and a signal TSV.
• This model is configured to have a 50 ⁇ transmission line.
• Figure 11 shows the signal transmission characteristics and reflection characteristics for the model shown in Figure 10.
• the horizontal axis shows the signal frequency (megahertz, MHz), and the vertical axis shows the signal strength (decibels, dB).
• Resonance that is thought to be caused by the mismatch of the pad impedance can be seen.
• the frequency of the primary reflection is determined by the length of each TSV. It is thought that the frequency is the secondary resonance mode near 20 GHz. It is possible to reduce these resonances.
• the thickness of the substrate can be made thinner and the length of the TSV can be made shorter. This allows the resonance frequency corresponding to the length of the TSV to be shifted in a higher direction. As a result, it is possible to obtain good transmission characteristics up to high frequencies (for example, around 20 GHz).
• the bonding surface may have wiring (also referred to as a wiring metal region) disposed along the bonding surface.
• the wiring metal region may be bonded to another substrate.
• a first bonding surface of a first substrate may have a first wiring metal region
• a second bonding surface of a second substrate bonded to the first substrate may have a second wiring metal region. The first wiring region and the second wiring metal region may be bonded.
• the wiring metal region may be configured so that an electrical signal or current flows in the direction of the connection surface in a portion, at least a portion, or the entirety of the wiring metal region.
• the wiring metal region may be connected to a through electrode that penetrates the substrate.
• first wiring metal region of the first substrate and the second wiring metal region of the second substrate may have substantially the same shape and may be configured to be joined over substantially their entire areas. In some embodiments, the first wiring metal region of the first substrate and the second wiring metal region of the second substrate may have different shapes or may be configured to have no overlapping portions.
• the first wiring metal region of the first substrate and the second wiring metal region of the second substrate may be bonded to form wiring along the bonding surface.
• a first through-hole electrode of the first substrate may be connected to a portion of this formed wiring, and a second through-hole electrode of the second substrate may be connected to another portion.
• an electrical signal or current is transmitted in the direction of the first through-hole electrode, the wiring formed in the bonding surface, and the second through-hole electrode, or in the opposite direction.
• bonding of wiring metal regions at the bonding surface improves the strength of the bonded body.
• bonding of wiring metal regions at the bonding surface improves the electrical properties of the bonded body.
• a layout is adopted in which wiring is arranged in an in-plane direction, depending on the arrangement of elements in a planar direction and/or a three-dimensional direction, the configuration of the wiring between them, etc. By bonding such wiring, it is possible to improve bonding properties such as mechanical strength and electrical properties. In-plane wiring can be used effectively.
• the bonding surface may have wiring metal regions and plain metal regions (plain metal regions).
• the substrate may have plain metal regions within the substrate (below the bonding surface).
• Example of metal wiring area> 12 to 16 are schematic diagrams showing examples of bonded substrates having wiring metal regions.
• A) in each figure shows a perspective view of the bonded structure as viewed from a direction perpendicular to the bonded surface.
• B) in each figure shows a perspective view of the bonded structure. Parts other than the metal regions, such as non-metallic regions, insulating parts, and dielectrics, are shown as transparent. The noise blocking characteristics of these models were simulated (see FIG. 21).
• the longitudinal length of the wiring metal area is 8 ⁇ m (L8um), and no plain metal area is provided at all (w/o PL).
• the first substrate 2110 and the second substrate 2120 are bonded at a bonding surface 2150.
• the first substrate 2110 has a wiring metal region for signal transmission (first signal transmission wiring metal region) 2111, a wiring metal region for ground (first ground wiring metal region) 2113 connected to ground, and a wiring metal region for power supply (first power supply wiring metal region) 2115 connected to a power supply, which are formed in an elongated shape on the bonding surface. These wiring regions 2111, 2113, and 2115 are arranged in an array on the bonding surface.
• the first signal transmission wiring metal region 2111 is connected at one end to a through electrode for signal transmission (first signal transmission through electrode) 2112.
• the first ground wiring metal region 2113 is connected at one end to a through electrode for ground (first ground through electrode) 2114.
• the first power supply wiring metal region 2115 is connected at one end to a through electrode for power supply (first power supply through electrode) 2116.
• the second substrate 2120 is also configured in a similar manner to the first substrate 2110.
• the second substrate 2120 has, on its joint surface, a wiring metal region for signal transmission (second signal transmission wiring metal region) 2121, a wiring metal region for ground connected to ground (second ground wiring metal region) 2123, and a wiring metal region for power connected to a power source (second power source wiring metal region) 2125, all of which are formed in an elongated shape.
• the through electrodes in the second substrate 2120 i.e., the second signal transmission through electrode 2122, the second ground through electrode 2124, and the second power source through electrode 2126, are also configured in a similar manner to the first signal transmission through electrode 2112, the first ground through electrode 2114, and the first power source through electrode 2116 of the first substrate 2110.
• the first signal transmission wiring metal region 2111, the first ground wiring metal region 2113, and the first power supply wiring metal region 2115 of the first substrate 2110 are respectively joined to the second signal transmission wiring metal region 2121, the second ground wiring metal region 2123, and the second power supply wiring metal region 2125 of the second substrate 2120.
• the first signal transmission through electrode 2112, the first signal transmission wiring metal region 2111, the second signal transmission wiring metal region 2121, and the second signal transmission through electrode 2122 are electrically connected.
• the first signal transmission through electrode 2112, the first signal transmission wiring metal region 2111, the second signal transmission wiring metal region 2121, and the second signal transmission through electrode 2122 are electrically connected.
• the first ground through electrode 2114, the first ground wiring metal region 2113, the first signal transmission wiring metal region 2111, the second signal transmission wiring metal region 2121, and the second signal transmission through electrode 2122 are electrically connected.
• the longitudinal length of the wiring metal area was 8 ⁇ m (L8um).
• a power plane metal area connected to a power supply was provided on the bonding surfaces of both substrates, and these were bonded together to provide a ground plane metal area in one of the substrates (PPG).
• the first substrate 2210 and the second substrate 2220 are bonded at a bonding surface 2250.
• the first substrate 2210 has a first signal transmission wiring metal region 2211, a first ground wiring metal region 2213, and a first power supply wiring metal region 2215 on its bonding surface. These wiring regions 2211, 2213, and 2215 are arranged in an array on the bonding surface, and a power supply plane metal region 2215P connected to the power supply and the first power supply wiring metal region 2215 is arranged to surround them.
• the second substrate 2220 has a second signal transmission wiring metal region 2221, a second ground wiring metal region 2223, and a second power supply wiring metal region 2225 on its bonding surface. These wiring regions 2221, 2223, and 2225 are arranged in an array on the bonding surface, and a power supply plane metal region 2225P connected to the power supply and second power supply wiring metal region 2225 is arranged surrounding them.
• the second substrate 2220 in FIG. 13 further has a ground plane metal region 2223P arranged parallel to the bonding surface within the substrate (below the bonding surface). The ground plane metal region 2223P is electrically connected to the ground and second ground wiring metal region 2223.
• the first signal transmission wiring metal region 2211, the first ground wiring metal region 2213, the first power supply wiring metal region 2215, and the first power supply plane metal region 2215P of the first substrate 2210 are bonded to the second signal transmission wiring metal region 2211, the second ground wiring metal region 2223, the second power supply wiring metal region 2225, and the first power supply plane metal region 2225P of the second substrate 2220, respectively.
• the through electrodes are also arranged in the same manner as in FIG. 12 and are connected to the corresponding metal regions, and their description will be omitted. Note that the power wiring metal region and the power plane metal region on the bonding surface are formed to be substantially flush with each other, and do not necessarily need to be distinguished.
• the longitudinal length of the wiring metal area was 8 ⁇ m (L8um).
• a power plane metal area connected to a power supply was provided on the bonding surfaces of both substrates, and these were bonded together, providing a ground plane metal area within both substrates (below the bonding surfaces) (GPPG).
• the first substrate 2310 and the second substrate 2320 are bonded at a bonding surface 2350.
• the first substrate 2310 has a first signal transmission wiring metal region 2311, a first ground wiring metal region 2313, and a first power supply wiring metal region 2315 on its bonding surface. These wiring regions 2311, 2313, and 2315 are arranged in an array on the bonding surface, and a power supply plane metal region 2315P connected to the power supply and the first power supply wiring metal region 2315 is arranged so as to surround them.
• the first substrate 2310 in FIG. 14 further has a ground plane metal region 2313P arranged parallel to the bonding surface within the substrate (below the bonding surface). The ground plane metal region 2313P is electrically connected to the ground and the first ground wiring metal region 2313.
• the second substrate 2320 has a second signal transmission wiring metal region 2321, a second ground wiring metal region 2323, and a second power supply wiring metal region 2325 on its bonding surface. These wiring regions 2321, 2323, and 2325 are arranged in an array on the bonding surface, and a second power supply plane metal region 2325P connected to the power supply and second power supply wiring metal region 2325 is arranged surrounding them.
• the second substrate 2320 in FIG. 14 further has a ground plane metal region 2323P arranged parallel to the bonding surface within the substrate (below the bonding surface). The ground plane metal region 2323P is electrically connected to the ground and second ground wiring metal region 2323.
• the first signal transmission wiring metal region 2311, the first ground wiring metal region 2313, the first power supply wiring metal region 2315, and the first power supply plane metal region 2315P of the first substrate 2310 are bonded to the second signal transmission wiring metal region 2311, the second ground wiring metal region 2323, the second power supply wiring metal region 2325, and the second power supply plane metal region 2325P of the second substrate 2320, respectively.
• the through electrodes are also arranged in the same manner as in FIG. 12 and are connected to the corresponding metal regions, and their description will be omitted. Note that the power wiring metal region and the power plane metal region on the bonding surface are formed to be substantially flush with each other, and do not necessarily need to be distinguished.
• the longitudinal length of the wiring metal area was 8 ⁇ m (L8um).
• a ground plane metal area connected to ground was provided on the bonding surfaces of both substrates (GG).
• the first substrate 2410 and the second substrate 2420 are bonded at a bonding surface 2450.
• the first substrate 2410 has a first signal transmission wiring metal region 2411 and a first ground wiring metal region 2413 on the bonding surface. These wiring regions 2311, 2313 are arranged in an array on the bonding surface.
• One unit 2460 is configured to include three first signal transmission wiring metal regions 2411 and one first ground wiring metal region 2413.
• the bonding surface further has a first ground plane metal region 2413P, which surrounds the two first signal transmission wiring metal regions 2411 and one first signal transmission wiring metal region 2411 in the unit 2460, respectively, and is connected to the ground and the first ground wiring metal region 2413.
• the second substrate 2420 has a second signal transmission wiring metal region 2421 and a second ground wiring metal region 2423 on its bonding surface. These wiring regions 2421, 2423 are arranged in an array on the bonding surface, and a ground plane metal region 2423P connected to the ground and the first ground wiring metal region 2423 is arranged to surround them.
• the first signal transmission wiring metal region 2411, the first ground wiring metal region 2413, and the first ground plane metal region 2413P of the first substrate 2410 are bonded to the second signal transmission wiring metal region 2421, the second ground wiring metal region 2423, and the second ground plane metal region 2423P of the second substrate 2420, respectively.
• the through electrodes are also arranged in the same manner as in FIG. 12 and are connected to the corresponding metal regions, and their description will be omitted. Note that the ground wiring metal region and the ground plane metal region of the bonding surface are formed to be substantially flush with each other, and do not necessarily need to be distinguished.
• the longitudinal length of the wiring metal area was 8 ⁇ m (L8um).
• a ground plane metal area connected to a power supply was provided on the bonding surfaces of both substrates, and these were bonded together to provide a power plane metal area within both substrates (below the bonding surfaces) (PGGP).
• the first substrate 2510 and the second substrate 2520 are bonded at a bonding surface 2550.
• the first substrate 2510 has a first signal transmission wiring metal region 2511, a first ground wiring metal region 2513, and a first power supply wiring metal region 2515 on the bonding surface. These wiring regions 2511, 2513, and 2515 are arranged in an array on the bonding surface, and a first ground plane metal region 2513P connected to the ground and the first ground wiring metal region 2513 is arranged so as to surround them.
• the first substrate 2510 in FIG. 16 further has a first power supply plane metal region 2515P arranged parallel to the bonding surface within the substrate (below the bonding surface). The first power supply plane metal region 2515P is electrically connected to the power supply and the first power supply wiring metal region 2515.
• the second substrate 2520 is configured symmetrically to the first substrate 2510 .
• the second substrate 2520 has a second signal transmission wiring metal region 2521, a second ground wiring metal region 2523, and a second power supply wiring metal region 2525 on its bonding surface. These wiring regions 2521, 2523, and 2525 are arranged in an array on the bonding surface, and a second ground plane metal region 2523P connected to the ground and second ground wiring metal region 2523 is arranged so as to surround them.
• the second substrate 2520 of FIG. 16 further has a second power supply plane metal region 2525P arranged parallel to the bonding surface within the substrate (below the bonding surface). The second power supply plane metal region 2525P is electrically connected to the power supply and first power supply wiring metal region 2515.
• the first signal transmission wiring metal region 2511, the first ground wiring metal region 2513, the first power supply wiring metal region 2515, and the first ground plane metal region 2515P of the first substrate 2510 are bonded to the second signal transmission wiring metal region 2511, the second ground wiring metal region 2523, the second power supply wiring metal region 2525, and the second ground plane metal region 2525P of the second substrate 2520, respectively.
• the through electrodes are also arranged in the same manner as in FIG. 12 and are connected to the corresponding metal regions, and their description will be omitted. Note that the ground wiring metal region and the ground plane metal region of the bonding surface are formed to be substantially flush with each other, and do not necessarily need to be distinguished.
• 17 to 20 show schematic examples of standard bonded substrates (bonding surfaces having no wiring metal regions).
• A) in each figure shows a perspective view of the bonded surface of the bonded substrate as viewed from a direction perpendicular to the bonded surface.
• B) in each figure shows a perspective view of the bonded substrate. Non-metallic regions, insulating parts, dielectrics, and other parts other than the metallic regions are shown as transparent. The noise blocking characteristics of these models were simulated (see FIG. 21).
• the mating surface may have differential signal metal regions (or metal pads), i.e., a signal plus metal region and a signal minus metal region, arranged in a unit, and the unit may be arranged in an array.
• the differential signal metal regions may be arranged in an array on the mating surface.
• the unit may include a single-ended metal region.
• the unit may include a ground metal region.
• a ground metal region may be disposed within the mating surface of the unit so as to surround the differential signal metal region.
• the ground metal region may have an opening in the mating surface, within which other metal regions may be disposed.
• only one of the differential signal plus metal region and the differential signal plus metal region may be disposed in one opening.
• only the differential signal plus metal region may be disposed in one opening, and only the differential signal minus metal region may be disposed in the other opening.
• another opening may be provided in the joint surface, and a single-ended metal region may be disposed within that opening.
• only one pair of differential signal plus metal regions and differential signal plus metal regions may be disposed in one opening.
• the differential signal plus metal regions and the differential signal plus metal regions are separated from each other by an insulating surface, but only one pair of differential signal plus metal regions and differential signal plus metal regions, i.e., two metal regions (pads), are disposed within the opening.
• one opening may have only one pair of differential signal plus metal regions and differential signal plus metal regions, and only other metal regions.
• the differential signal plus metal regions and the differential signal plus metal regions are separated from each other by an insulating surface, and within the opening, only one pair of differential signal plus metal regions and differential signal plus metal regions may be arranged, in addition to other metal regions.
• the other metal regions may be, for example, single-ended metal regions.
• the first substrate 2610 and the second substrate 2620 are bonded at the bonding surface 2650.
• the first substrate 2610 has a first differential signal plus metal region 2611+, a first differential signal minus metal region 2611-, a first single-ended metal region 2611se, and a first ground metal region 2613 on its bonding surface.
• FIG. 17 shows the arrangement of the units 2660 within the bonding surface.
• a pair of differential signal metal regions 2611+, 2611-, a first single-ended metal region 2611se, and a first ground metal region 2613 are arranged within the bonding surface of the unit 2660.
• the units 2660 are repeatedly arranged in the bonding surface direction, and the differential signal metal regions 2611+, 2611-, the first single-ended metal region 2611se, and the first ground metal region 2613 are arranged in an array on the bonding surface.
• the second substrate 2620 is configured symmetrically to the first substrate 2610 .
• the second substrate 2620 has, on its joining surface, a second differential signal plus metal region 2621+, a second differential signal minus metal region 2621-, a second single-ended metal region 2621se, and a second ground metal region 2623. These metal regions 2621+, 2621-, 2621se, and 2623 are arranged in an array on the joining surface.
• the first differential signal plus metal region 2611+, the first differential signal minus metal region 2611-, the first single-ended metal region 2611se, and the first ground metal region 2613 of the first substrate 2610 are bonded to the second differential signal plus metal region 2621+, the second differential signal minus metal region 2621-, the second single-ended metal region 2621se, and the second ground metal region 2623 of the second substrate 2620, respectively.
• STD SE GG is a standard model (STD) that does not include a wiring metal area.
• the joint surface has an electrode pad (metal area), and the electrode pad has a metal area for differential signals and a single-ended metal area (SE).
• SE single-ended metal area
• GG ground plane metal area connected to ground is provided on the joint surfaces of both substrates, and these are joined together
• the first substrate 2710 and the second substrate 2720 are bonded at the bonding surface 2750.
• the first substrate 2710 has a first differential signal plus metal region 2711+, a first differential signal minus metal region 2711-, a first single-ended metal region 2711se, and a first ground metal region 2713 on its bonding surface.
• FIG. 18 shows the arrangement of the unit 2760 on the bonding surface.
• a pair of differential signal metal regions 2711+, 2711-, and one first single-ended metal region 2711se are arranged on the bonding surface of the unit 2760, which are spaced apart from each other by an insulating surface, and a first ground plane metal region 2713P connected to the ground and the first ground metal region 2713 is arranged to surround the entire three.
• the first ground plane metal region 2713P has an opening that does not have metal, and the first ground plane metal region 2713P connected to the ground and the first ground metal region 2713 is arranged in the opening.
• the units 2760 are arranged repeatedly in the joining surface direction, and the differential signal metal regions 2711+, 2711-, the first single-ended metal region 2711se, and the first ground metal region 2713 are arranged in an array on the joining surface.
• the pad spacing was 1 ⁇ m, and the distance from one side of the pad to the nearest ground plane metal region was 0.5 ⁇ m.
• the second substrate 2720 is configured symmetrically to the first substrate 2710. Therefore, a description of the second substrate 2720 will be omitted.
• the first differential signal plus metal region 2711+, the first differential signal minus metal region 2711-, the first single-ended metal region 2711se, the first ground metal region 2713, and the first ground plane metal region 2713P of the first substrate 2710 are bonded to the second differential signal plus metal region 2721+, the second differential signal minus metal region 2721-, the second single-ended metal region 2721se, the second ground metal region 2723, and the second ground plane metal region 2723P of the second substrate 2720, respectively.
• the ground metal area and the ground plane metal area of the bonding surface are formed to be substantially flush with each other and do not necessarily need to be distinguished.
• the example in Figure 19 (STD SE GG 025) is a standard model (STD) that does not include a wiring metal area.
• the joint surface has an electrode pad (metal area), and the electrode pad has a metal area for differential signals and a single-ended metal area (SE).
• SE single-ended metal area
• a ground plane metal area connected to ground is provided on the joint surface of both substrates (GG). Furthermore, the distance from one side of the pad to the nearest ground plane metal area is 0.25 ⁇ m (025).
• the first substrate 2810 and the second substrate 2820 are bonded at the bonding surface 2850.
• the first substrate 2810 has a first differential signal plus metal region 2811+, a first differential signal minus metal region 2811-, a first single-ended metal region 2811se, and a first ground metal region 2813 on its bonding surface.
• FIG. 19 shows the arrangement within the unit 2860.
• a first ground plane metal region 2813P connected to ground and the first ground metal region 2813 is arranged to surround each of the first differential signal plus metal region 2811+, the first differential signal minus metal region 2811-, and the first single-ended metal region 2811se.
• the first ground plane metal region 2813P has three openings within the unit, and one metal region is arranged in each opening.
• the first differential signal positive metal region 2811+ is disposed in the first opening
• the first differential signal negative metal region 2811- is disposed in the second opening
• the first single-ended metal region 2811se is disposed in the third opening.
• the units 2860 are repeatedly disposed in the joining surface direction, and the differential signal positive and negative metal regions 2811+, 2811-, the first single-ended metal region 2811se, and the first ground metal region 2813 are arranged in an array on the joining surface.
• the pad spacing was 1 ⁇ m, and the distance from one side of the pad to the nearest ground plane metal region was 0.25 ⁇ m.
• the first ground plane metal region 2713P is arranged to surround the first differential signal plus metal region 2811+, the first differential signal minus metal region 2811-, and the first single-ended metal region 2811se.
• the first ground plane metal region 2813P is arranged to surround each of the first differential signal plus metal region 2811+, the first differential signal minus metal region 2811-, and the first single-ended metal region 2811se.
• the pad size and the distance between the pads were set to the same.
• the distance from one side of the pad to the nearest ground plane metal region was 0.5 ⁇ m and 0.25 ⁇ m. As a result, the manner in which the ground plane metal region surrounds the pads was different between the two.
• the second substrate 2820 is configured symmetrically to the first substrate 2810. Therefore, a description of the second substrate 2820 will be omitted.
• the first differential signal plus metal region 2811+, the first differential signal minus metal region 2811-, the first single-ended metal region 2811se, the first ground metal region 2813, and the first ground plane metal region 2813P of the first substrate 2810 are bonded to the second differential signal plus metal region 2821+, the second differential signal minus metal region 2821-, the second single-ended metal region 2821se, the second ground metal region 2823, and the second ground plane metal region 2823P of the second substrate 2820, respectively.
• the ground metal area and the ground plane metal area of the bonding surface are formed to be substantially flush with each other and do not necessarily need to be distinguished.
• the example in Figure 20 is a standard model (STD) that does not include a wiring metal area.
• the bonding surface has an electrode pad (metal area), and the electrode pad has a metal area for differential signals, a power pin, and ground.
• a ground plane metal area connected to ground is provided on the bonding surfaces of both substrates, and these are bonded to provide a power plane metal area within both substrates (below the bonding surface) (PGGP).
• the first substrate 2910 and the second substrate 2920 are bonded at a bonding surface 2950.
• the first substrate 2910 has a first differential signal plus metal region 2911+, a first differential signal minus metal region 2911-, a first power supply metal region (also called a power supply pin) 2915, and a first ground metal region 2913 on its bonding surface.
• FIG. 20 shows the arrangement within the unit 2960.
• a pair of differential signal metal regions 2911+, 2911- are arranged within the bonding surface of the unit 2960, which are spaced apart from each other by an insulating surface, and a first ground plane metal region 2913P connected to ground and the first ground metal region 2913 is arranged to surround these two.
• the first ground plane metal region 2913P has an opening that has no metal, and the pair of differential signal metal regions 2911+, 2911- are arranged within the opening.
• the first substrate 2910 in FIG. 20 further includes a first power plane metal region 2915P disposed within the substrate (below the bonding surface) parallel to the bonding surface.
• the first power plane metal region 2915P is electrically connected to the power supply and first power wiring metal region 2915.
• differential signal metal regions 2911+, 2911-, and the first power plane metal region 2915 and first ground metal region 2913 connected to the ground plane metal region 2913P are arranged in an array.
• the pad spacing was 1 ⁇ m, and the distance from one side of the pad to the nearest ground plane metal region was 0.5 ⁇ m.
• the second substrate 2920 is configured symmetrically to the first substrate 2910. Therefore, a description of the second substrate 2920 will be omitted.
• the first differential signal plus metal region 2911+, the first differential signal minus metal region 2911-, the first power supply metal region 2915, the first ground metal region 2913, and the first ground plane metal region 2913P of the first substrate 2910 are bonded to the second differential signal plus metal region 2921+, the second differential signal minus metal region 2921-, the second power supply metal region 2925, the second ground metal region 2923, and the second ground plane metal region 2923P of the second substrate 2920, respectively.
• the ground metal area and the ground plane metal area of the bonding surface are formed to be substantially flush with each other and do not necessarily need to be distinguished.
• electromagnetic waves parallel to the bonding surface parallel waves
• Fig. 21 shows the transmission characteristics when the frequency of the parallel waves is from 20 GHz to 100 GHz.
• CST STUDIO SUITE was used, and the signal transmission characteristics were calculated using S parameters (particularly S21 for transmission loss and S41 for crosstalk effects).
• the noise shielding effect was evaluated using Sparameter by treating noise as a plane wave and directing a plane wave (TE (0,0) wave) perpendicularly to the joint surface.
• FIG. 21 shows the noise transmission characteristics for the models shown in FIGS.
• the plain metal area has an effect of suppressing noise transmission.
• the noise transmission was suppressed in the following order: "w/o PL" (no plain metal area), "PP” (two-layer plain metal area bonded together), “PPG” (two-layer plain metal area bonded together and a buried plain metal area), “PGGP” and “GPPG” (two-layer plain metal area bonded together and a total of two plain metal areas buried in each substrate).
• the noise transmission was suppressed in the following order: "w/o PL", "GG”, and "PGGP". Therefore, it was found that, first, the plain metal area has an effect of suppressing noise transmission compared to a configuration without a plain metal area. Second, the effect of suppressing noise transmission was higher as the number or thickness of the plain metal areas was larger.
• the bonded body may have one or more (two, three, four, five, or more) layers of plain metal regions in at least two substrates that it comprises.
• the plain metal regions may be located on the joining surface of one of the two joined substrates.
• the plain metal regions may be located inside one of the two joined substrates.
• the bonded body may have two layers of plain metal regions.
• the two plain metal regions may be located on the joining surface of the two joined substrates. They may be bonded to each other.
• One of the two plain metal regions may be located on the joining surface of one of the two joined substrates, or may be located inside the substrate.
• the positions of the multiple plain metal regions in the direction perpendicular to the joining surface may be either on the joining surface and/or inside the substrate (below the joining surface).
• Figure 23 shows the noise transmission characteristics for each model. It was clear that in all configurations, "L8um GG,” “L8um PGGP,” and “L8um GPPG,” the smaller the gap, the greater the effect of noise transmission suppression.
• a gap larger than 0.5 ⁇ m can provide a noise transmission suppression effect.
• a gap of 1 ⁇ m is thought to provide a high effect.
• the gap may be determined according to the circuit design. In other words, in terms of design selection of the entire circuit or unit, for example, 0.25 ⁇ m is not necessarily optimal.
• a gap of 0.5 ⁇ m, 1 ⁇ m, etc. can also provide a noise transmission suppression effect.
• the bonded body may include a high-frequency module, device, unit, or element (hereinafter, may be referred to as a high-frequency element).
• the metal region may have a function of suppressing transmission of high-frequency noise emitted from the high-frequency element.
• high frequency elements include, but are not limited to, Si or compound semiconductor high frequency elements.
• Si high frequency elements generally function in the band of several MHz to several GHz.
• high frequency elements include, but are not limited to, clock generators, RF elements, etc.
• III-V high frequency elements such as GaAs, GaN, InP, etc. generally function in bands such as 1 GHz, 10 GHz, 100 GHz, etc.
• high frequency elements include, but are not limited to, bipolar transistors (BT) such as heterojunction bipolar transistors (HBT); field effect transistors (FET) such as MOSFETs and FinFETs, etc.
• BT bipolar transistors
• HBT heterojunction bipolar transistors
• FET field effect transistors
• MOSFETs and FinFETs etc.
• the joint may have a metal region of a predetermined area or larger above or below the high frequency element, which can suppress the transmission of high frequency noise emitted from the high frequency element and limit the influence on other elements, signal transmission, and other electrical characteristics.
• the metal region corresponding to the RF element may be disposed parallel to the bonding surface at a position perpendicular to the bonding surface (the stacking direction in three-dimensional packaging).
• the metal region When viewed from a direction perpendicular to the bonding surface, the metal region may cover a predetermined percentage or a larger percentage of the area occupied by the high frequency element.
• the metal region may include a plain metal region.
• the metal region may include a wiring electrode parallel to the bonding surface.
• the metal region, plain metal region, and wiring electrode may be located on a certain bonding surface, or may be located below the bonding surface (inside the substrate).
• the metal region may be disposed on one of the bonding surfaces or on a plane within one of the substrates.
• a metal region having a function of suppressing the transmission of noise emitted from the high frequency element may be provided on one of the bonding surfaces.
• the metal region may be formed in multiple layers.
• the metal region may be disposed on multiple layers with the same size.
• the metal region may be disposed on multiple layers with different sizes.
• the arrangement of the metal region may be arranged according to the design of each substrate or layer.
• the metal region may be disposed on multiple bonding surfaces, on multiple planes within the substrates, or on multiple bonding surfaces and planes within the substrates, and may be arranged so that the total area when viewed from a direction perpendicular to the bonding surfaces is a predetermined percentage or greater of the area occupied by the high frequency element.
• Fig. 24 The left side of Fig. 24 (A) to (D) shows a perspective view of the assembly unit when viewed from a direction perpendicular to the joint surface. The right side shows a perspective view of the assembly. The explanation of the arrangement in the figure is omitted because it is the same as Fig. 12 to Fig. 20.
• Figure 24 (C) shows a bonded pair of substrates with wiring metal regions.
• Each unit has four wiring metal regions on one substrate.
• a through electrode is connected to the end of each wiring metal region.
• a plain metal region is provided to surround two of the wiring metal regions. Between the two substrates, the wiring metal regions are bonded to the corresponding wiring metal regions of the other substrate, and the plain metal regions are bonded to the corresponding plain metal regions of the other substrate.
• the total area of the through electrodes, wiring metal regions, and plain metal regions is 60% of the total.
• the wiring metal area is removed from the model in Figure 24(C), leaving only the through electrodes and the plain metal area, with the four through electrodes connected to corresponding through electrodes on another substrate.
• the total area of the through metal area and the plain metal area is 30% of the total.
• the distance (gap) between the wiring metal regions and the plain metal regions is smaller than in the model of FIG. 24(C). This means that each wiring metal region is surrounded by a plain metal region.
• the total area of the penetrating metal regions and the plain metal regions is 90% of the total area.
• Figure 25 shows the transmission characteristics for parallel waves at frequencies from 0 GHz to 100 GHz.
• ⁇ Non-floating dummy pad> So-called hybrid bonding, in which substrates having metal electrodes and insulating materials on the same bonding surface are bonded to each other, is often used in three-dimensional packaging.
• CMP chemical mechanical polishing
• the bonding surface is composed of materials with different polishing characteristics, such as Cu pads as fine electrodes and low-k materials such as oxides, nitrides, and SiO 2 , TEOS, and SiCN as insulating layers. These must be CMPed to a surface roughness of Ra within a few nm, and the Cu and insulating layer must be made flush with each other or the Cu must be recessed by a few nm relative to the insulating layer.
• Natural bonding waves that do not require pressure are a phenomenon in which two hydrophilized substrate surfaces, especially non-metallic parts (insulating layer, semiconductor surface), bond together through van der Waals forces. Therefore, for example, it is necessary to wash the insulating layer with water and make it hydrophilic after activation treatment such as plasma treatment. Furthermore, if the electrode pad is convex or spreads out flat, the bonding wave of the insulating layer will not naturally spread across the entire bonding surface. Therefore, in that sense, as mentioned above, it is also important that the electrode is not convex with the insulating layer surface, that is, the electrode surface is either flush with the insulating layer surface or concave with respect to the insulating layer surface.
• the metal of the electrode expands by heating. Some of the metal may diffuse. This electrically connects the pair of opposing electrode surfaces. Therefore, the size of the depression of the electrode surface must be adjusted to the extent that connection between the electrodes can be made by heating at the desired temperature. Although it depends on the heat resistance of the elements on the substrate, generally, the heating conditions applied to the substrate are 350°C or less, and preferably 200°C. At this temperature, the opposing electrode surfaces expand and come into contact, and in order to establish a good electrical connection, the depression of the electrode surface relative to the insulating layer surface must be a few nm or less.
• the substrate 4110 has fine electrodes 4111 and solid metal areas 4113 or solid insulating layer areas 4115 in areas other than the electrodes. If the solid metal areas 4113 or solid insulating layer areas 4115 occupy a large area, the difference in polishing characteristics between the electrode area and the insulating layer area during CMP processing will be large. In many cases, the insulating layer is harder than metal parts such as Cu. Therefore, the solid metal areas 4113 will be significantly recessed, and conversely, the insulating layer 4115 will be significantly protruded (see FIG. 26).
• metal dummy pads 4213 having a similar shape to the microelectrodes 4211 in areas of the substrate 4210 close to the original microelectrodes 4211 with the same shape and periodicity as the microelectrodes, as shown in FIG. 27 for example.
• such conventional metal dummy pads 4213 are electrically floating, unlike the microelectrodes 4211 and the like.
• Some embodiments of the present disclosure also provide an aspect in which a floating dummy pad is arranged on the bonding surface.
• some embodiments of the present disclosure also provide an aspect in which a non-floating dummy pad is arranged on the bonding surface.
• a non-floating dummy pad is arranged on the bonding surface.
• the inventors have discovered that electrical characteristics can be improved by electrically connecting the dummy pad to a power supply or ground rather than floating it. Floating dummy pads are not effective in such electrical noise countermeasures.
• electrically connecting the dummy pad to a power supply or ground is effective in noise countermeasures.
• a wiring layer is arranged inside the substrate, for example on the device surface. The dummy pad can be connected to a power supply line or ground line by this wiring layer.
• a plurality of metal pads for signal transmission (signal transmission pads) 4311 are arranged in an array on the bonding surface 4317 of the substrate 4310.
• the signal transmission pads 4311 are connected to a signal transmission line 4312.
• a plurality of dummy pads 4313 are arranged in an array similar to the signal transmission pads 4311 on the other parts of the bonding surface 4317.
• the metal pads including the plurality of signal transmission pads 4311 and the plurality of dummy pads 4313, in other words, the metal pads collectively referred to as these, are arranged substantially uniformly in an array over substantially the entire bonding surface.
• an insulating surface 4315 is arranged on the bonding surface 4317. Each of the plurality of first metal pads is surrounded by the insulating surface 4315.
• the dummy pads 4313 are connected to a power line or a ground line 4314. In other words, the dummy pads 4313 are not electrically floating.
• the non-floating dummy pads and the electrode pads for signal transmission may be collectively referred to as metal pads.
• the metal pads may be periodically arranged across the bonding surface.
• the total area of the metal pads may be 30% or more of the area of the bonding surface, allowing a large portion of the bonding surface to be occupied by the metal pads.
• the total area of the non-floating dummy pads may be greater than the total area of the transmission signal pads, allowing a large portion of the bonding surface to be occupied by the non-floating metal regions.
• the insulating layer surrounds each of the signal transmission pads and dummy pads individually. In some embodiments, the insulating layer is continuous across the entire mating surface or across a large area on the mating surface. In some embodiments, the shape and periodicity of the signal transmission pads and dummy pads may be constant. In some embodiments, they may be substantially uniformly arranged in an array.
• Figure 29 shows an enlarged view (right) of a portion of the bonding surface 4417 of the wafer 4410 (left).
• metal pads 4411 which collectively refer to electrode pads for signal transmission and dummy pads connected to a power source or ground, are arranged in an array. Each metal pad 4411 is isolated and surrounded by an insulating layer 4415. This insulating layer 4415 is continuous across the bonding surface 4417.
• the positioning of corresponding metal areas between substrates may be performed, for example, by providing multiple position adjustment marks on one substrate and multiple corresponding position adjustment marks at corresponding positions on the other substrate, and aligning both position adjustment marks with each other.
• the misalignment between both position adjustment marks may be measured by allowing light transmitted through the substrates to be incident perpendicularly on the joining surface from either substrate side, and observing an image of the position adjustment marks captured by the transmitted light using a camera provided on the opposite side.
• the positioning between corresponding metal regions of the substrates is achieved by aligning position adjustment marks provided on both substrates with each other using light transmitted through the substrates. This makes it possible to obtain a positioning accuracy of, for example, ⁇ 1 ⁇ m. Furthermore, if the positioning is not sufficient, the substrates can be separated from each other immediately after temporary bonding, repositioned, and then temporarily bonded, and this process can be repeated until the required positioning accuracy is obtained. This makes it possible to obtain a positioning accuracy of ⁇ 0.2 ⁇ m.
• the shape of the metal area or metal pad in the bonding surface may be a polygon, such as a rectangle, a square, etc.
• the metal pad may be formed in a convex polygon.
• the metal pad may be formed in a substantially square shape.
• the metal pad may be formed in a substantially rectangular shape.
• the metal pad may be an interconnect metal area or interconnect metal pad, and may be formed in a rectangular shape.
• the metal pad may be formed in a non-convex polygon.
• the metal pad may be formed in an L-shape in the bonding surface, and may have a shape that includes multiple L-shaped bends.
• the shape of the metal pads, such as signal transmission pads and dummy pads, at the bonding surface may be rounded. Angular shapes, such as square or rectangular corners, can cause the propagation of the bonding wave to be hindered.
• the pads preferably have curvilinear, rounded, circular or elliptical shapes.
• the metal pads may be formed in a rounded polygon, i.e., substantially polygonal, with rounded or curved corners.
• a plurality of signal-transmitting metal pads and a plurality of dummy pads may be arranged in an array.
• a portion where only a plurality of signal-transmitting metal pads are present and a portion where only a plurality of dummy pads are present may be formed on the bonding surface.
• a plurality of signal-transmitting metal pads may be arranged in a portion of the bonding surface, for example in the center, and a plurality of dummy pads may be arranged to surround them.
• a portion where a plurality of signal-transmitting metal pads and a plurality of dummy pads are arranged in a mixed manner may be present on the bonding surface.
• the signal-transmitting metal pads and the dummy pads may be arranged in a similar array. That is, the metal pads may be arranged with a certain regularity, with some of the metal pads being formed as signal-transmitting metal pads and others being formed as dummy pads.
• all of the multiple dummy pads on one unit of bonding surface may be non-floating dummy pads.
• the multiple dummy pads may include non-floating dummy pads and floating dummy pads. Some of the multiple dummy pads may be non-floating dummy pads and other some may be floating dummy pads.
• a plurality of signal transmission metal pads may be arranged in a portion of the bonding surface, for example in the center, and a plurality of non-floating dummy pads may be arranged to surround them.
• a plurality of signal transmission metal pads may be arranged in a portion of the bonding surface, for example in the center, and a plurality of non-floating dummy pads and a plurality of floating dummy pads may be arranged to surround them.
• a plurality of signal transmission metal pads may be arranged in a portion or center of the bonding surface, and non-floating dummy pads may be arranged in a circumferential region (one circumference) of a predetermined width to surround them, and floating dummy pads may be arranged in other portions, for example, outside the circumferential region where the non-floating dummy pads are arranged.
• a mixture of floating dummy pads and non-floating dummy pads may be arranged outside the circumferential region.
• FIG. 7B shows a configuration of a bonding surface 700B having a signal transmission pad 710B and a dummy pad 720B according to one embodiment.
• FIG. 7B may be used, for example, but not limited to, on either an interposer or a PCB, for example, on one side of a single-ended pad.
• the dummy pad 720B is not formed as a single, continuous or solid pad, but is formed as a pad or pin.
• the dummy pad 720B has a metal area for a power supply and a metal area for a ground. They are connected or configured to be connected to a power supply or a ground, respectively.
• the signal transmission pad 710B shown in FIG. 7B is defined in the center 711B of the bonding surface 700B.
• the signal transmission pad 710B is not formed as a single, continuous or solid pad, but is formed as an individual signal transmission pad 710B.
• the signal transmission pad 710B is connected or configured to be connected to the gate voltage (VDD) or ground (GND) of the device.
• a circumferential region 712B is defined to surround a central portion 711B in which a signal transmission pad 710B is disposed. Dummy pads 720B are disposed in this circumferential region 712B. In some embodiments, all of the ground metal regions 720B in this circumferential region 712B may be connected to a power supply or ground. In other words, they may all be non-floating dummy pads.
• Dummy pads 720B are arranged in an area further outside the circumferential area 712B. In some embodiments, all of these dummy pads 720B may be connected to a power supply or ground. In some embodiments, at least some of these dummy pads 720B may be connected to a power supply or ground, and others may be floating.
• Two rows of dummy pads 720B are arranged in the orbital region 712B shown in FIG. 7B.
• the present disclosure is not limited to this.
• one row of dummy pads 720B may be arranged in the orbital region 712B.
• three or more rows of dummy pads 720B may be arranged in the orbital region 712B.
• the center portion 711B is defined at the center of the mating surface 700B.
• the center portion 711B does not have to be located at the geometric center of the mating surface 700B.
• the center portion 711B may be located at a position offset in a certain direction of the mating surface 700B.
• one center portion 711B is defined at the mating surface 700B.
• the mating surface 700B may have multiple center portions 711B.
• the pads on the entire bonding surface do not have to have the exact same shape, periodicity, or array pattern.
• alignment marks, solid metal or insulator areas of a certain size, or other spaces may be arranged on the bonding surface to the extent that the effect on bonding wave propagation and alignment accuracy is not an issue.
• Substrates 4510 and 4520 shown in FIG. 30 are configured in the same manner as in FIG. 27, for example.
• Signal transmission pads 4511 and 4521 and dummy pads 4513 and 4523 are arranged in an array across bonding surfaces 4517 and 4527, and are recessed from insulating surfaces 4515 and 4525. This is an example, and metal pads 4511, 4513, 4521 and 4523 may be formed flush with insulating surfaces 4515 and 4525. Alternatively, metal pads 4511, 4513, 4521 and 4523 may be formed slightly higher or convex than insulating surfaces 4515 and 4525 to the extent that they do not interfere with natural bonding waves.
• plasma treatment and hydrophilization treatment are performed on the bonding surfaces 4517 and 4527.
• the insulating surfaces 4515 and 4525 are made hydrophilic (hydrophilized insulating surfaces 4515H and 4525H in the figure).
• the bonding surfaces 4517 and 4527 may be irradiated with a particle beam (ion beam, neutron beam, etc.) or plasma to perform activation processing. Even if the metal pads are formed in a convex shape, it is possible to obtain a strong bond.
• the bonded state is heated (annealed) to expand or deform the metal pads 4511, 4513, 4521, and 4523, bonding the first signal transmission pad 4511 to the second signal transmission pad 4521, and the first dummy pad 4513 to the second dummy pad 4523. Electrical connections are established between the first signal transmission pad 4511 and the second signal transmission pad 4521, and between the first dummy pad 4513 and the second dummy pad 4523. As a result, the first substrate 4510 and the second substrate 4520 are bonded via the bonding interface 4550 (FIG. 30(C)).
• the total area of the dummy pads may be greater than the total area of the signal transmission pads. In some embodiments, the number of dummy pads may be greater than the number of signal transmission pads. This allows the entire bonding surface to be filled with metal pads, improving electrical properties such as noise suppression.
• the insulating surfaces 4515, 4525 do not need to be bonded. A high bond strength can be obtained simply by bonding a large number of metal pads arranged on the bonding surfaces. However, in some embodiments, the insulating surfaces 4515, 4525 may be bonded. This can further increase the bond strength.
• the dummy pads of both the first substrate 4510 and the second substrate 4520 are connected to a power supply or ground, or are non-floating.
• one of the first substrate 4510 and the second substrate 4520 may have dummy pads connected to a power supply or ground (non-floating), and the other may have dummy pads that are not connected to a power supply or ground (floating).
• a dummy pad (or a non-floating dummy pad) that is connected to a power supply or ground. This makes it possible to suppress the effect that noise generated inside one substrate of the bonded body has on the electronic elements of the other substrate.
• high-frequency element generally refers to electronic elements or wiring that operate in a band that includes 100 MHz to 100 GHz, and particularly includes 1 GHz to 100 GHz. These high-frequency elements are also sources of noise. In substrate assemblies in three-dimensional packaging, these noise sources and elements or wiring that are susceptible to the noise are placed in close proximity, making noise a major issue.
• a joint structure or a joint structure according to any one of the embodiments, a first substrate having a first mating surface having a first signal carrying metal region and a first ground metal region insulated from the first signal carrying metal region; and a second substrate mated with the first substrate, the second substrate having a second mating surface having a second signal carrying metal region and a second ground metal region insulated from the second signal carrying metal region; Equipped with the first signal carrying metal area and the second signal carrying metal area are bonded together; and the first ground metal area and the second ground metal area are bonded together. Joint structure. A002.
• the first substrate includes a through electrode that passes through the first substrate and is connected to the first signal carrying metal region, and/or the second substrate includes a through electrode that passes through the second substrate and is connected to the second signal carrying metal region.
• a joint structure according to any one of the embodiments of A001, the first substrate includes a through electrode penetrating the first substrate and connected to the first ground metal region, and/or the second substrate includes a through electrode penetrating the second substrate and connected to the second ground metal region.
• a joint structure according to any one of the embodiments of A001, The first and/or second ground metal regions are connected to ground or a power source. Joint structure. A005.
• Joint structure. A011 A joint structure according to any one of the embodiments of A001, the combined area of the first signal carrying metal region and the first ground metal region is 10% or more of the area of the first bonding surface, and/or the combined area of the second signal carrying metal region and the second ground metal region is 10% or more of the area of the second bonding surface. Joint structure. A012.
• a joint structure according to any one of the embodiments of A001, the combined area of the first signal carrying metal region and the first ground metal region is 30% or more of the area of the first bonding surface, and/or the combined area of the second signal carrying metal region and the second ground metal region is 30% or more of the area of the second bonding surface.
• a joint structure according to any one of the embodiments of A001, the combined area of the first signal carrying metal region and the first ground metal region is 60% or more of the area of the first bonding surface, and/or the combined area of the second signal carrying metal region and the second ground metal region is 60% or more of the area of the second bonding surface. Joint structure. A014.
• the joint structure according to A001 or any of the embodiments, the first or second signal carrying metal region is substantially surrounded by the first or second ground metal region within the first or second interface; Joint structure. A031.
• a joint structure according to any one of the embodiments of A001, the first or second signal carrying metal region is disposed in the first or second interface plane and spaced apart from the first or second ground metal region. Joint structure. A033.
• the first or second interface surface comprises an insulating surface at a separation between the first or second signal carrying metal region and the first or second ground metal region; Joint structure.
• the first interface surface comprises a first insulating surface disposed between the first signal carrying metal region and the first ground metal region;
• the second interface surface comprises a second insulating surface disposed between the second signal carrying metal region and the second ground metal region;
• the first insulating surface and the second insulating surface are bonded to each other. Joint structure. A035b.
• the first interface surface comprises a first insulating surface disposed between the first signal carrying metal region and the first ground metal region; the second interface surface comprises a second insulating surface disposed between the second signal carrying metal region and the second ground metal region; the first insulating surface and the second insulating surface are not bonded to each other; Joint structure.
• a joint structure according to any one of the embodiments of A001, the first or second signal carrying metal area and the first or second ground metal area are in non-contact with each other; Joint structure. A037.
• a joint structure according to any one of the embodiments of A001, the first and/or second signal carrying metal regions comprise a plurality of first and/or second signal carrying metal regions; Joint structure.
• the joint structure according to A001 or any of the embodiments, the plurality of first and/or second signal carrying metal regions comprising at least one signal carrying metal region for carrying an analog signal and at least one signal carrying metal region for carrying a digital signal; Joint structure.
• a joint structure according to any one of the embodiments of A001, the first and/or second ground metal regions comprise a plurality of first and/or second ground metal regions insulated from one another within a corresponding joint surface; Joint structure. A052.
• a joint structure according to any one of the embodiments of A001, the first and/or second ground metal regions are connected to ground and/or to different power sources; Joint structure. A053.
• a joint structure according to any one of the embodiments of A001, a portion of the first and/or second ground metal regions are disposed within a corresponding joint surface to surround a signal carrying metal region for an analog signal; Another part of the first and/or second ground metal regions is disposed in the corresponding joint surface so as to surround the signal transmission metal region for the digital signal. Joint structure. A061.
• a joint structure according to any one of the embodiments of A001 The non-occupied metal portions or the metal materials are periodically arranged within the ground metal region. periodically disposed over all or a portion of the ground metal region; Joint structure. A066.
• a joint structure according to any one of the embodiments of A001 The non-occupied portion of the metal material or the metal material is arranged in a mesh shape within the ground metal region. Joint structure. A067.
• a joint structure according to any one of the embodiments of A001, the area of the metal material unoccupied portion is 10% to 50% of the area of the ground metal region; Joint structure. A101.
• a joint structure or a joint structure a first substrate having a first bonding surface having a first signal carrying metal region and a first ground metal region insulated from the first signal carrying metal region; A second substrate bonded to the first substrate, a second upper bonding surface facing the first bonding surface, the second upper bonding surface having a second upper signal carrying metal region and a second upper ground metal region insulated from the second upper signal carrying metal region; a second lower bonding surface having a second lower signal carrying metal region and a second lower ground metal region insulated from the second lower signal carrying metal region; and a third substrate bonded to the second substrate, the third substrate having a third signal carrying metal region and a third ground metal region insulated from the third signal carrying metal region, the third substrate having a third bonding surface opposite the second lower bonding surface.
• method. B012. The method of B001, or any of the embodiments, comprising: prior to contacting the first signal carrying metal area with the second signal carrying metal area and prior to contacting the first ground metal area with the second ground metal area; activating a surface of at least one of the first signal carrying metal area and the second signal carrying metal area; and activating a surface of at least one of the first ground metal area and the second ground metal area.
• contacting the first signal carrying metal area with the second signal carrying metal area comprises contacting the activated surface with the other; contacting the first ground metal region with the second ground metal region comprises contacting the activated surface with the other.
• method. B013. The method of B001, or any of the embodiments, comprising: The activation comprises a process selected from the group consisting of plasma treatment, ion bombardment, atomic beam irradiation, radical irradiation, and electromagnetic wave irradiation; method. B014.
• the method of B001, or any of the embodiments, comprising: The contacting of the first signal carrying metal area with the second signal carrying metal area and the contacting of the first ground metal area with the second ground metal area are performed without heating or at room temperature.
• a joint structure or a joint structure according to any one of the embodiments a first substrate having a first bonding surface having a first signal carrying metal region and a first ground metal region; and a second substrate bonded to the first substrate, the second substrate having a second bonding surface having a second signal carrying metal region and a second ground metal region; Equipped with the first signal carrying metal area and the second signal carrying metal area are joined together; and the first ground metal area and the second ground metal area are joined together; the combined area of the first signal carrying metal region and the ground metal region is 30% or more of the area of the first bonding surface, and/or the combined area of the second signal carrying metal region and the ground metal region is 30% or more of the area of the second bonding surface. Joint structure. C002.
• the combined area of the first signal carrying metal region and the ground metal region is greater than 60% of the area of the first interface; and/or the combined area of the second signal carrying metal region and the ground metal region is greater than 60% of the area of the second interface. Joint structure.
• a joint structure or a joint structure according to any one of the embodiments a first substrate having a first bonding surface having a plurality of first signal carrying metal regions and a first plane metal region formed to surround the plurality of first signal carrying metal regions; and a second substrate bonded to the first substrate, the second substrate having a second bonding surface having a plurality of second signal carrying metal regions and a second plane metal region formed to surround the plurality of second signal carrying metal regions; Equipped with the first signal carrying metal regions and the second signal carrying metal regions are bonded together; and the first plane metal region and the second plane metal region are bonded together. Joint structure. E011.
• a distance between at least one of the first signal carrying metal regions and the first plane metal region is 1 ⁇ m or less; a distance between at least one second signal carrying metal area of the plurality of second signal carrying metal areas and the second plane metal area is 1 ⁇ m or less; Joint structure. E012.
• the joint structure according to E011 or any of the embodiments The distance is 0.5 ⁇ m or less.
• the joint structure according to E011 or E012, or any of the embodiments, The distance is 0.25 ⁇ m or less. Joint structure.
• the joint structure according to any one of E001 to E013, or any embodiment thereof, one or both of the first and second substrates have plain metal regions within the substrate; Joint structure.
• a joint structure or a joint structure according to any one of the embodiments a first substrate having a first bonding surface having a first wiring metal region; and a second substrate bonded to the first substrate, the second substrate having a second bonding surface having a second wiring metal region; Equipped with the first wiring metal region and the second wiring metal region are joined together; Joint structure. F011.
• the joint structure according to F001 or any of the embodiments the first bonding surface further comprises a first plane metal region formed to surround the first wiring metal region; the second bonding surface further comprises a second plane metal region formed to surround the second wiring metal region; the first plane metal region and the second plane metal region are joined together; Joint structure. F021.
• the joint structure according to F001 or F011, or any of the embodiments, one or both of the first and second substrates have plain metal regions within the substrate; Joint structure.
• a joint structure or a joint structure according to any one of the embodiments A first substrate, First differential signal plus metal area; a first differential signal minus metal region; and a first plane metal region formed surrounding the first differential signal plus metal region and the first differential signal minus metal region; a first substrate having a first bonding surface having a first bonding surface having a second bonding surface, Second differential signal plus metal area; A second differential signal minus a metal region; and a second plane metal region formed surrounding the second differential signal plus metal region and the second differential signal minus metal region; a second substrate having a second bonding surface having Equipped with the first differential signal plus metal region and the second differential signal plus metal region are joined; the first differential signal minus metal region and the second differential signal minus metal region are bonded together; and the first plane metal region and the second plane metal region are bonded together.
• a joint structure A first substrate, a pair of a first differential signal plus metal region and a first differential signal minus metal region; and a first plane metal region formed surrounding the pair of the first differential signal plus metal region and the first differential signal minus metal region; a first substrate having a first bonding surface having a first bonding surface having a second bonding surface, a pair of a second differential signal plus metal region and a second differential signal minus metal region; and a second plane metal region formed surrounding the pair of the second differential signal plus metal region and the second differential signal minus metal region; a second substrate having a second bonding surface having Equipped with the first differential signal plus metal region and the second differential signal plus metal region are joined; the first differential signal minus metal region and the second differential signal minus metal region are bonded together; and the first plane metal region and the second plane metal region are bonded together.
• the first plane metal region includes: the first differential signal plus metal region; the first differential signal minus metal region; and one or both of a first single-ended metal region and a first power metal region; It is formed to surround
• the second plane metal region includes: the second differential signal plus metal region; the second differential signal minus metal region; and one or both of a second single-ended metal region and a second power metal region; It is formed to surround the first single-ended metal region and the second single-ended metal region are joined; and/or the first power metal region and the second power metal region are joined; Joint structure.
• the first plane metal region is further formed to surround one or both of a first single-ended metal region and a first power metal region;
• the second plane metal region is further formed to surround one or both of a second single-ended metal region and a second power metal region; the first single-ended metal region and the second single-ended metal region are joined; and/or the first power metal region and the second power metal region are joined together; Joint structure.
• Joint structure. H011 The joint structure according to any one of the embodiments of H001, The high frequency element operates at 1 GHz or higher. Joint structure. H021.
• the metal region has an area of 30% or more of an area occupied by the high-frequency element when the joining structure is viewed from the stacking direction of the substrate.
• the joint structure according to any one of the embodiments of H001, the metal region comprises a plain metal region; Joint structure. H032.
• the joint structure according to any one of the embodiments of H031, the plurality of stacked substrates includes a first substrate and a second substrate bonded together; the bonding surface of the first substrate has a first plane metal region; the bonding surface of the second substrate has a second plane metal region; the first plane metal region and the second plane metal region are joined together; Joint structure. H033.
• the metal regions include plain metal regions formed within the plurality of stacked substrates; Joint structure. H041.
• the joint structure according to any one of the embodiments of H001, The metal region configured to suppress transmission of electromagnetic noise in the stacking direction is a ground metal region. Joint structure.
• a joint structure or the joint structure according to any one of the embodiments i) a first substrate having a first bonding surface,
• the first joining surface is a plurality of first signal transmitting pads arranged in an array; a plurality of first dummy pads arranged in a similar array on the first bonding surface other than the portion on which the plurality of first signal pads are arranged; and a first insulating surface; having a first substrate, a plurality of first metal pads including the plurality of first signal transmission pads and a plurality of first dummy pads being generally uniformly arranged in an array across substantially an entirety of the first bonding surface, each of the plurality of first metal pads being surrounded by a first insulating surface; and ii) a second substrate bonded to the first substrate, the second substrate having a second bonding surface,
• the second joining surface is a plurality of second signal transmitting pads arranged in an array; a plurality of second dummy pads arranged in a similar array on the second bonding surface other than the portion
• Joint structure I002.
• the joint structure according to I001 or any of the embodiments, The first dummy pads are connected to a power supply or a ground; the second dummy pads are connected to a power supply or a ground; Connection structure.
• the joint structure according to I001 or any of the embodiments, At least one of the first dummy pads and the second dummy pads is connected to a power supply or a ground.
• the joint structure according to I001 or any of the embodiments, At least some of the first dummy pads and the second dummy pads are connected to a power supply or a ground. Joint structure. I005.
• the joint structure according to I001 or any of the embodiments a part of the first dummy pads and the second dummy pads are connected to a power supply or a ground; Another part of the first dummy pads and the second dummy pads are floating type. Joint structure. I006.
• the joint structure according to I001 or any of the embodiments At least a portion of the first and second dummy pads that are joined together are disposed in a circumferential region of the first and second signal transmission pads, and the first dummy pads disposed in the circumferential region are connected to a power supply or a ground.
• the joint structure according to I001 or any of the embodiments The first insulating surface and the second insulating surface are joined together. Joint structure. I011b.
• the joint structure according to I001 or any of the embodiments The first insulating surface and the second insulating surface are not joined together. Joint structure. I012.
• the joint structure according to I001 or any of the embodiments the first insulating surface is formed substantially continuously across the first bonding surface; the second insulating surface is formed substantially continuously across the second bonding surface; Joint structure. I013.
• the joint structure according to I001 or any of the embodiments, The first metal pads and the second metal pads have a rounded shape (an in-plane contour having substantially no corners). Joint structure. I014.
• a total area of the plurality of first dummy pads is greater than a total area of the first signal transmission pads;
• the total area of the plurality of second dummy pads is greater than the total area of the second signal transmission pads; Joint structure.
• a total area of the plurality of first metal pads is 30% or more of an area of the first bonding surface;
• the total area of the plurality of second metal pads is 30% or more of the area of the second bonding surface; Joint structure.
• the joint structure according to I001 or any of the embodiments, The alignment accuracy between the first metal pads and the second metal pads is within 1 ⁇ m. Joint structure. I017.
• the first plurality of signal carrying pads include a first differential signal plus metal region and a first differential signal minus metal region, and/or the second plurality of signal carrying pads include a second differential signal plus metal region and a second differential signal minus metal region; Joint structure. I018.
• At least one of the first substrate and the second substrate comprises high frequency elements or elements operating at frequencies above 1 GHz. Joint structure. I031.
• a method for bonding substrates or a method according to any of the embodiments comprising: a) a first substrate having a first bonding surface, The first joining surface is a plurality of first signal transmitting pads arranged in an array; a first insulating surface; and a first dummy pad arranged in a similar array on the first bonding surface other than the first signal pads; a first substrate, wherein a plurality of first metal pads, including the plurality of first signal transmission pads and a plurality of first dummy pads, are substantially uniformly arranged in an array across substantially an entirety of the first bonding surface, and each of the plurality of first metal pads is surrounded by a first insulating surface; b) a second substrate having a second bonding surface, The second joining surface is a plurality of
• I102 The method of I101, or any of the embodiments, comprising: The first dummy pads are connected to a power supply or ground, or are non-floating; and the second dummy pads are connected to a power supply or ground, or are non-floating. method.
• I103 The method of I101, or any of the embodiments, comprising: One or at least one of the plurality of first dummy pads and the plurality of second dummy pads is connected to a power supply or a ground. method.
• I104 The method of I101, or any of the embodiments, comprising: At least some of the first dummy pads and the second dummy pads are connected to a power supply or a ground. method.
• I105 The method of I101, or any of the embodiments, comprising: At least some of the first dummy pads and the second dummy pads are connected to a power supply or a ground.
• the method of I101 comprising: a part of the first dummy pads and the second dummy pads are connected to a power supply or a ground; Another part of the first dummy pads and the second dummy pads are floating type. method. I106.
• the method of I101 comprising: At least a portion of the first dummy pads are disposed in a first surrounding region of the first signal transmission pads; At least a portion of the second dummy pads are disposed in a second surrounding region of the second signal transmission pads; the first signal transmission pads in the first peripheral region and the second signal transmission pads in the second peripheral region are joined together; At least one of the first dummy pads in the first surrounding region and the second signal transmission pads in the second peripheral region is connected to a power supply or a ground. method. I111.
• I121 The method of I101, I112, or any of the embodiments, comprising: The first insulating surface, the first signal transmission metal pads, and the first dummy pads on the first bonding surface are formed substantially flush with each other; the second insulating surface, the second signal transmitting metal pads, and the second dummy pads on the second bonding surface are formed substantially flush with each other; method. I122. The method of I101, or any embodiment, comprising: the first signal-transmitting metal pads and the first dummy pads on the first bonding surface are recessed relative to the first insulating surface, and/or the second signal-transmitting metal pads and the second dummy pads on the second bonding surface are recessed relative to the second insulating surface. method. I123.
• the method of I127 comprising: The method may further comprise, after step c), annealing the bonded first and second substrates at a temperature of 200 degrees Celsius or less without pressure.
• I128. The method of I127 or any embodiment, comprising: The first insulating surface and the second insulating surface are not joined together.
• method. I131. The method of I101, or any embodiment, comprising: The first insulating surface, the first signal transmission metal pads, and the first dummy pads on the first bonding surface are formed substantially flush with each other; the second insulating surface, the second signal transmitting metal pads, and the second dummy pads on the second bonding surface are formed substantially flush with each other; method. I132.
• the method according to I131 or any of the embodiments comprising, before c), performing a surface activation treatment on at least one of the first bonding surface and the second bonding surface; performing a hydrophilization treatment on at least one of the first bonding surface and the second bonding surface after the surface activation treatment;
• the method further comprises: I133.
• I134 The method of I133 or any embodiment, further comprising annealing the bonded first and second substrates without pressure at a temperature of 200 degrees Celsius or less, or optionally 150 degrees Celsius or less.
• the method of I001 comprising: During bonding, the alignment accuracy between the first metal pads and the second metal pads is within 1 ⁇ m. method.
• I201. A substrate having a bonding surface or the substrate according to any of the embodiments, for use in hybrid bonding, comprising: The joining surface is A plurality of signal transmission pads arranged in an array; a plurality of dummy pads arranged in a similar array on the remaining portion of the first bonding surface; and an insulating surface, a plurality of metal pads including the plurality of signal transmission pads and the plurality of dummy pads are arranged substantially uniformly in an array over substantially the entire bonding surface, each of the plurality of metal pads being surrounded by an insulating surface; At least a portion of the plurality of dummy pads is connected to a power supply or a ground. substrate.
• the metal region, metal pad, or pin comprises copper (Cu).
• the "upper substrate,” “middle substrate,” and “lower substrate” can be expressed as the “first substrate,” “second substrate,” and “third substrate” respectively (in any order), and the “upper surface” and “lower surface” can be expressed as the “first substrate” and “second substrate” respectively (in any order), or can be expressed using any numbers, adjectives, other nouns, or combinations thereof, as appropriate.

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