WO2024255600A1 - 激光器模组 - Google Patents

激光器模组 Download PDF

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Publication number
WO2024255600A1
WO2024255600A1 PCT/CN2024/096160 CN2024096160W WO2024255600A1 WO 2024255600 A1 WO2024255600 A1 WO 2024255600A1 CN 2024096160 W CN2024096160 W CN 2024096160W WO 2024255600 A1 WO2024255600 A1 WO 2024255600A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting chip
heat sink
laser
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2024/096160
Other languages
English (en)
French (fr)
Inventor
郭梦晓
周子楠
张昕
田有良
卢瑶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Hisense Laser Display Co Ltd
Original Assignee
Qingdao Hisense Laser Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202310723380.0A external-priority patent/CN119153455A/zh
Priority claimed from CN202321670807.7U external-priority patent/CN220086615U/zh
Priority claimed from CN202310773058.9A external-priority patent/CN119231306A/zh
Application filed by Qingdao Hisense Laser Display Co Ltd filed Critical Qingdao Hisense Laser Display Co Ltd
Priority to CN202480016208.4A priority Critical patent/CN121359329A/zh
Publication of WO2024255600A1 publication Critical patent/WO2024255600A1/zh
Priority to US19/403,961 priority patent/US20260088586A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present application relates to the field of optoelectronic technology, and in particular to a laser module.
  • the laser is an important component of the laser module.
  • the laser includes a light-emitting chip and a protective device.
  • the light-emitting chip and the protective device are arranged at intervals.
  • the light-emitting chip generates heat when emitting laser.
  • the temperature of the light-emitting chip will easily exceed its normal operating temperature limit due to heat accumulation, which will affect the light-emitting effect of the light-emitting chip and may also cause damage to the light-emitting chip.
  • the present application provides a laser module that can solve the problem of high operating temperature of the laser.
  • the laser module includes a laser, and the laser includes a frame, a substrate, a heat sink, a light-emitting chip, and a protective device.
  • the frame and the heat sink are fixed on the substrate, the heat sink, the light-emitting chip, and the protective device are all located inside the frame, and the light-emitting chip and the protective device are fixed on the heat sink.
  • the light-emitting chip and the protective device have a spacing in the length direction of the heat sink, and the orthographic projection of the light-emitting chip and the orthographic projection of the protective device partially overlap or are spaced apart in the length direction of the heat sink.
  • FIG1 is a schematic structural diagram of a light emitting device in a related art in an embodiment of the present application.
  • FIG2 is a schematic structural diagram of a light emitting device in a related art in an embodiment of the present application.
  • FIG3 is a schematic structural diagram of a light emitting device in an embodiment of the present application.
  • FIG4 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application.
  • FIG5 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application.
  • FIG6 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application.
  • FIG7 is a schematic cross-sectional view of a light emitting device in an embodiment of the present application.
  • FIG8 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application.
  • FIG9 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application.
  • FIG10 is a schematic diagram of the connection between an electrical probe and a heat sink and a light-emitting chip in a related art in an embodiment of the present application;
  • FIG11 is a schematic diagram of an electrical probe connected to a heat sink and a light-emitting chip in one embodiment of the present application;
  • FIG12 is a schematic diagram of an electrical probe connected to a heat sink and a light-emitting chip in one embodiment of the present application;
  • FIG13 is a schematic diagram of a partial structure of a light emitting device in a related art in an embodiment of the present application.
  • FIG14 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application.
  • FIG15 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application.
  • FIG16 is a schematic diagram of a partial structure of a light emitting device in a related art in an embodiment of the present application.
  • FIG17 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application.
  • FIG18 is a side view of a laser according to another embodiment of the present application.
  • FIG19 is a light path diagram of laser light emitted from a light emitting chip in a laser according to another embodiment of the present application.
  • FIG20 is a light path diagram of a laser emitted from a light emitting chip when the thickness of a heat sink is relatively small in another embodiment of the present application;
  • FIG21 is a light path diagram of laser light emitted from another light emitting chip in another embodiment of the present application.
  • FIG22 is a schematic diagram of a light emitting chip fixed on a heat sink in another embodiment of the present application.
  • FIG23 is a schematic diagram of simulating the heating of a light-emitting chip in another embodiment of the present application.
  • Fig. 26 is a cross-sectional view of the laser shown in Fig. 8 at A-A';
  • FIG27 is a cross-sectional schematic diagram of yet another laser in another embodiment of the present application.
  • FIG28 is a cross-sectional schematic diagram of yet another laser in another embodiment of the present application.
  • FIG29 is a schematic diagram of a cross-sectional structure of a laser module in the related art in another embodiment of the present application.
  • FIG31 is a schematic diagram of a planar structure of a laser module according to one or more embodiments of yet another embodiment of the present application.
  • FIG32 is a schematic cross-sectional structure diagram of a laser module in one or more embodiments of yet another embodiment of the present application.
  • FIG33 is a schematic diagram of the 3D structure of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG34 is a schematic diagram of the cross-sectional structure of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG35 is a schematic diagram of the cross-sectional structure of a laser module in another embodiment or embodiments of the present application.
  • FIG36 is a schematic cross-sectional structure diagram of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG37 is a schematic diagram of the planar structure of a base plate of one or more other embodiments in yet another embodiment of the present application.
  • FIG38 is a schematic cross-sectional structure diagram of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG39 is a schematic diagram of the cross-sectional structure of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG40 is a schematic diagram of the cross-sectional structure of a laser module in another embodiment or embodiments of the present application.
  • FIG41 is a schematic diagram of the cross-sectional structure of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG42 is a schematic diagram of a planar structure of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG43 is a schematic diagram of the cross-sectional structure of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG44 is a schematic diagram of a planar structure of a laser of one or more embodiments in yet another embodiment of the present application.
  • FIG45 is a schematic diagram of a cross-sectional structure of a laser in one or more embodiments of yet another embodiment of the present application.
  • FIG46 is a schematic diagram of the planar structure of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG47 is a schematic diagram of the cross-sectional structure of a laser module in another embodiment or embodiments of the present application.
  • FIG48 is a schematic diagram of the 3D structure of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • FIG49 is a schematic diagram of the planar structure of a laser module of one or more other embodiments in yet another embodiment of the present application.
  • the laser module mainly includes a laser and a base plate, which are connected to each other and electrically connected through pins.
  • the base plate is used to provide a mounting base for the laser, and the laser is used to emit laser light, which is a key functional component in the laser module. The following is an introduction to the emitter.
  • the laser includes a frame 1, a substrate 2, a heat sink 3, a light-emitting chip 4 and a protective device 5.
  • the frame 1 and the heat sink 3 are fixed on the substrate 2, and the heat sink 3 is located inside the frame 1.
  • the light-emitting chip 4 and the protective device 5 are located on the heat sink 3.
  • the laser includes multiple heat sinks 3, and each heat sink 3 has a light-emitting chip 4 and a protective device 5.
  • the distance L between two adjacent light-emitting chips 4 is affected by the width of the light-emitting chip 4, the width of the heat sink 3, and the overflow size of the glue 6 used to mount the heat sink 3.
  • a protection device 5 needs to be placed on the heat sink 3 in parallel with the light emitting chip 4 to protect the light emitting chip 4 .
  • the protection device 5 is welded on the heat sink 3, and the light emitting chip 4 and the protection device 5 are connected along the width of the heat sink 3. Arranged in parallel in the direction of X. Since there is a certain error when placing the light emitting chip 4 and the protection device 5, in order to avoid collision between the light emitting chip 4 and the protection device 5, a certain safety distance a needs to be left between the light emitting chip 4 and the protection device 5, which makes the size occupied by the light emitting chip 4 and the protection device 5 in the width direction m+a+n, resulting in a larger width of the heat sink 3. In this case, it is difficult to further reduce the size of the heat sink 3.
  • a laser in one embodiment of the present application, includes a frame 1, a substrate 2, a heat sink 3, a light-emitting chip 4 and a protective device 5.
  • the frame 1 and the heat sink 3 are both fixed to the substrate 1, and the heat sink 3, the light-emitting chip 4 and the protective device 5 are all located inside the frame 1.
  • the light-emitting chip 4 and the protective device 5 are fixed to the heat sink 3, and the light-emitting chip 4 and the protective device 5 have a spacing in the length direction Y of the heat sink 3.
  • the component consisting of the heat sink 3, the light emitting chip 4 and the protection device 5 can be called COS (Chip On Submount, embedded chip).
  • the light emitting chip 4 may also be called a blue-green chip.
  • the width of the light emitting chip 4 may be 0.1 mm-0.3 mm.
  • the width of the light emitting chip 4 is 0.2 mm.
  • the light emitting point of the light emitting chip 4 is located at one end of the light emitting chip 4 away from the protective device 5.
  • the end where the light emitting point is located may be called the front end of the light emitting chip 4, and the end close to the protective device 5 may be called the rear end of the light emitting chip 4.
  • the light emitting chip 4 emits a large amount of heat when working, and the heat sink 3 is used to absorb the heat emitted by the light emitting chip 4.
  • the protection device 5 can also be called a protection element.
  • the protection device 5 can be a Zener diode or a voltage regulator.
  • the width of the protection device 5 can be 0.2-0.4 mm.
  • the width of the protection device 5 can be 0.3 mm.
  • the protection device 5 is connected in parallel with the light emitting chip 4 to improve the antistatic ability of the light emitting chip 4.
  • the laser provided in the embodiment of the present application is configured to have a spacing between the light-emitting chip 4 and the protection device 5 in the length direction of the heat sink 3, so that there is no need for a safety distance between the light-emitting chip 4 and the protection device 5 in the width direction. Therefore, the size occupied by the light-emitting chip 4 and the protection device 5 in the width direction can be reduced, so that the width of the laser is reduced, which is conducive to the miniaturization of the laser.
  • the length of the laser frame 1 is relatively long and the distance between two adjacent heat sinks 3 arranged along the length direction of the laser frame 1 is relatively long, compared with the laser in the related art, although the light-emitting chip 4 and the protection device 5 occupy a larger size in the length direction, the length of the frame 1 will not be increased, and the miniaturization of the laser will not be adversely affected.
  • the projections of the light emitting chip 4 and the protection device 5 in the length direction Y of the heat sink 3 at least partially overlap.
  • c can also be 0, in which case the side edge of the light emitting chip 4 and the side edge of the protection device 5 coincide with each other.
  • the projection of the light emitting chip 4 in the length direction Y of the heat sink 3 all falls on the projection of the protection device 5 along the length direction Y of the heat sink 3.
  • the width m of the light emitting chip 4 is smaller than the width n of the protection device 5.
  • the dimension occupied by the light emitting chip 4 and the protection device 5 in the width direction X of the heat sink 3 is the width n of the protection device 5 .
  • the projection of the protection device 5 in the length direction Y of the heat sink 3 may all fall on the projection of the light emitting chip 4 in the length direction Y of the heat sink 3 .
  • the width m of the light emitting chip 4 is greater than the width n of the protection device 5 .
  • the dimension occupied by the light emitting chip 4 and the protection device 5 in the width direction X of the heat sink 3 is the width m of the light emitting chip 4 .
  • the size occupied by the light emitting chip 4 and the protection device 5 in the width direction X can be minimized, and the width of the laser can be minimized.
  • the symmetry axis of the light emitting chip 4 and the symmetry axis of the protection device 5 coincide with each other.
  • the distance between the first axis A of the light emitting chip 4 and the second axis B of the protection device 5 in the width direction X of the heat sink 3 is 0-0.35 mm.
  • the size occupied by the light emitting chip 4 and the protection device 5 in the width direction X of the heat sink 3 is smaller than that occupied by the existing solution.
  • the projections of the light emitting chip 4 and the protection device 5 in the length direction Y of the heat sink 3 may not overlap.
  • the spacing in the width direction is b.
  • b can be smaller than the safety distance a in the related art, thereby still being able to achieve the purpose of reducing the width of the heat sink 3.
  • b can be as small as 0.
  • the heat sink 3 includes a heat sink substrate 31, a gold layer 32 and a gold-tin layer 33 arranged in sequence, the width of the gold-tin layer 33 is smaller than the width of the gold layer 32, the width of the gold layer 32 is smaller than the width of the heat sink substrate 31, and the light-emitting chip 4 and the protective device 4 are welded on the gold-tin layer 33.
  • the structure of the gold-tin layer 33 is related to the arrangement of the light-emitting chip 4 and the protective device 5. The following is an exemplary description of the implementation of the gold-tin layer 33 in combination with the arrangement of the light-emitting chip 4 and the protective device 5:
  • the gold-tin layer 33 is an integrated gold-tin layer.
  • the gold-tin layer 33 only needs to be eutectic once.
  • the light emitting chip 4 and the protection device 5 are both welded to the gold-tin layer 33 , thereby saving eutectic time and improving the preparation efficiency of the laser.
  • the AuSn layer 33 is in a long strip shape and extends along the length direction Y of the heat sink 3 , and the light emitting chip 4 and the protection device 5 are arranged in sequence along the length direction of the AuSn layer 33 .
  • the gold-tin layer 33 is L-shaped, and includes a first region 331 and a second region 332.
  • the first region 331 is in a strip shape and extends along the length direction of the heat sink 3, and the second region 332 is located on one side of the first region 331.
  • the light-emitting chip 4 is located in the first region 331, a portion of the protection device 5 is located in the second region 332, and another portion is located in the first region 331.
  • the gold-tin layer 33 is designed to be L-shaped, and a pre-set integrated L-shaped gold-tin welding can be performed between the light-emitting chip 4, the protective device 5 and the gold-tin layer 33. In this way, the welding of the light-emitting chip 4 and the protective device 5 can be achieved at the same time, effectively improving the welding efficiency.
  • a safety distance is set between the light-emitting chip 4 and the protective device 5 in both the width direction X and the length direction Y.
  • the distance between the first axis A of the light-emitting chip 4 and the second axis B of the protective device 5 is greater than half of the sum of the width m of the light-emitting chip 4 and the width n of the protective device 5.
  • the gold-tin layer 33 may be in other shapes, as long as the above arrangement of the light-emitting chip 4 and the protection device 5 can still be achieved, and the embodiments of the present application do not limit this.
  • the gold-tin layer 33 includes a first gold-tin layer 33a and a second gold-tin layer 33b separated from each other, the first gold-tin layer 33a and the second gold-tin layer 33b are spaced apart in the length direction Y of the heat sink 3, the light-emitting chip 4 is located in the first gold-tin layer 33a, and the protection device 5 is located in the second gold-tin layer 33b.
  • the projections of the first gold-tin layer 33 a and the second gold-tin layer 33 b in the length direction Y of the heat sink 3 at least partially overlap.
  • the second AuSn layer 33 b is located on one side of the first AuSn layer 33 a , and the projections of the first AuSn layer 33 a and the second AuSn layer 33 b in the length direction Y of the heat sink 3 partially overlap.
  • the projections of the first AuSn layer 33a and the second AuSn layer 33b along the length direction Y of the heat sink 3 completely overlap.
  • the first axis A of the light emitting chip 4 and the second axis B of the protection device 5 may overlap.
  • the electric probe 7 is inserted into the gold layer 32, a pulling force is generated on the gold layer 32, which in turn causes uneven force on the gold layer 32 on the left side of the light-emitting chip 4 and the gold layer 32 on the right side of the light-emitting chip 4.
  • the uneven force on the gold layer 32 also causes uneven pulling force on the light-emitting chip 4, making the pulling force on the left side of the light-emitting chip 4 greater than the pulling force on the right side of the light-emitting chip 4, thereby increasing the risk of damage to the light-emitting chip 4.
  • the area of the gold layer 32 that is not connected to the electrical probe 7 it is easy for the area of the gold layer 32 that is not connected to the electrical probe 7 to not fully contact the heat dissipation base plate, especially the gold layer 32 on the right side of the light-emitting chip 4 is difficult to fully contact the heat dissipation base plate, thereby affecting the heat dissipation effect of the laser and causing the laser to be easily damaged.
  • the projections of the light-emitting chip 4 and the protection device 5 along the length direction Y of the heat sink 3 at least partially overlap the width of the area occupied by the gold-tin layer 33 is narrow, thereby reducing the difference in tension on both sides of the light-emitting chip 4.
  • the widths of the gold layer 32 on both sides of the gold-tin layer 33 are equal.
  • the electrical probe 7 can be distributed more evenly on the gold layer 32 on the left and right sides of the light-emitting chip 4, so that the force on the gold layer 32 can be more even, thereby making the tension on the left and right sides of the light-emitting chip 4 more uniform, making the light-emitting chip 4 less likely to be damaged.
  • the heat sink 3 can be in full contact with the heat dissipation base plate, which is beneficial to the heat dissipation of the laser.
  • the width of the gold layer 32 on both sides of the gold-tin layer 33 may be 0.2 mm.
  • the width of the gold layer 32 is too small, the heat dissipation effect of the heat sink 3 will be affected, which is not conducive to the heat dissipation of the light emitting chip 4, thereby causing the light emitting chip 4 to be easily damaged.
  • the laser includes a plurality of heat sinks 3, a plurality of light emitting chips 4, and a plurality of protective devices 5, and the number of heat sinks 3, light emitting chips 4, and protective devices 5 is equal.
  • the light emitting chip 4 on the first heat sink is connected to the gold layer 32 of the second heat sink via a gold wire 8
  • the protective device 5 on the first heat sink is connected to the gold layer 32 of the second heat sink via a gold wire 8.
  • the first heat sink and the second heat sink are two adjacent heat sinks 3.
  • the laser Since the laser has a plurality of evenly arranged light-emitting chips 4 (heat sinks 3), after the laser is prepared, it is necessary to electrically connect the adjacent light-emitting chips 4 (heat sinks 3) so that the adjacent light-emitting chips 4 are connected in series. Two adjacent light-emitting chips 4 need to be electrically connected via a gold wire 8, and both ends of each gold wire 8 are welded to the heat sink 3, the light-emitting chip 4 or the protective device 5 via solder joints 9. Since the current passing between the two adjacent light-emitting chips 4 is relatively large after the two adjacent light-emitting chips 4 are electrically connected, and the wire diameter of the gold wire 8 is relatively small, the maximum current that the gold wire 8 can withstand is also relatively small.
  • the light emitting chip 4 is usually connected in parallel with the protective device 5.
  • the light emitting chip 4 and the protective device 5 are electrically connected through a gold wire 8, and the light emitting chip 4 and the protective device 5 have corresponding solder joints 9.
  • the surface of the light emitting chip 4 has a metal layer, so after each gold wire 8 is energized, part of the current flows through the inside of the light emitting chip 4, and the other part of the current flows through the surface of the light emitting chip 4 and the protective device 5, thereby realizing the parallel connection of the light emitting chip 4 and the protective device 5.
  • the surface of the light emitting chip 4 in the related art has four solder joints 9. Among them, the solder joints 9 can also be called solder balls.
  • the electrical connection method is also adjusted accordingly.
  • the light emitting chip 4 is electrically connected to the gold layer 32 on the adjacent heat sink 3 through three gold wires 8, and the light emitting chip 4 and the gold layer 32 have corresponding solder joints 9. Since the gold layer 32 is not easily damaged by welding, the protection device 5 is electrically connected to the gold layer 32 on the adjacent laser through a gold wire 8, and the protection device 5 and the gold layer 32 have corresponding solder joints 9.
  • the surface of the light emitting chip 4 in the laser provided in the embodiment of the present application has three solder joints, wherein the solder joints 9 on the light emitting chip 4 and the solder joints 9 on the gold layer 32 are evenly arranged.
  • the three solder joints 9 can be moved as a whole toward the rear end of the light-emitting chip 4, so that the solder joints 9 are away from the front end of the light-emitting chip 4, that is, the solder joints 9 are away from the light-emitting points of the light-emitting chip 4, thereby reducing the risk of the solder joints 9 causing damage to the light-emitting points of the light-emitting chip 4.
  • the driving circuit sends an electrical signal to the COS through the first electrical connector 10
  • a part of the current conducted by the first electrical connector 10 flows through the light-emitting chip 4, and another part flows through the protective device 5, and then merges on the gold layer 32.
  • the current on the gold layer 32 then enters the next COS, and a part of it flows through the light-emitting chip 4, and another part flows through the protective device 5, and then flows through the second electrical connector 11.
  • the number of heat sinks 3 may be 16-36.
  • the laser further includes a cover plate 12 and a lens assembly 13, and the frame 1, the cover plate 12 and the lens assembly 13 are arranged in sequence.
  • the lens assembly 13 includes a plurality of lenses, and the number of the lenses is the same as the number of the light-emitting chips 4, and the lenses are used to converge the laser light emitted by the light-emitting chips 4.
  • a laser is provided. Please refer to FIG18 , which is a side view of a laser provided in an embodiment of the present application.
  • the laser 000 may include: a substrate 100 , at least one heat sink 200 , and at least one light emitting chip 300 .
  • At least one heat sink 200 in the laser 000 may be located on one side of the substrate 100 , and each heat sink 200 is fixedly connected to the substrate 100 .
  • At least one light emitting chip 300 in the laser 000 may correspond one-to-one to at least one heat sink 200 , each light emitting chip 300 may be located on a side of the corresponding heat sink 200 away from the substrate 100 , and each light emitting chip 300 may be fixedly connected to the corresponding heat sink 200 .
  • the heat sink 200 in the laser 000 refers to a heat sink made of diamond
  • the substrate 100 in the laser 000 refers to a base plate made of a composite material of diamond and copper.
  • diamond has a high thermal conductivity and a high thermal conductivity.
  • the thermal conductivity of a material can be reflected by the thermal conductivity. The higher the thermal conductivity, the stronger the thermal conductivity of the material.
  • the unit of thermal conductivity is watt/meter ⁇ K, which can also be written as W/(m ⁇ k).
  • the thermal conductivity of diamond is as high as 2000W/(m ⁇ k), so the thermal conductivity of a heat sink made of diamond (i.e., heat sink 200) is relatively high. In this way, during the operation of the laser 000, the heat generated by the light-emitting chip 300 can be quickly conducted through the heat sink 200 in a direction perpendicular to the substrate 100, and can be conducted to the substrate 100.
  • the thermal conductivity of the composite material of diamond and copper is also relatively high, so the heat conducted to the substrate 100 can be quickly dissipated, and the substrate 100 can conduct the heat to the outside world for heat dissipation.
  • the heat emitted by the light-emitting chip 300 in the laser 000 can be quickly dissipated, so that the operating temperature of the light-emitting chip 300 is relatively low, thereby making the light-emitting effect of the light-emitting chip 300 better, and it can also ensure that the light-emitting chip 300 is not easily damaged due to excessive temperature, thereby ensuring that the reliability of the laser 000 is relatively high.
  • the laser 000 may further include: at least one reflective prism 400 located on one side of the substrate 100.
  • Each reflective prism 400 in the laser 000 may be fixedly connected to the substrate 100, and at least one reflective prism 400 may correspond to at least one light emitting chip 300 one by one, and the light emitting surface of each light emitting chip 300 may face the reflective surface S of the corresponding reflective prism 400.
  • the side of the reflective prism 400 facing the substrate 100 is the bottom surface D of the reflective prism 400 .
  • the bottom surface D of the reflective prism 400 can be fixed on the substrate 100 , and the angle between the bottom surface D of the reflective prism 400 and the reflective surface 400 is acute.
  • FIG. 19 is a light path diagram of a laser emitted by a light-emitting chip in a laser provided in an embodiment of the present application.
  • the light-emitting chip 300 in the laser 000 emits laser light, which can be directed toward the corresponding reflection surface S of the reflection prism 400 and can be reflected by the reflection surface S of the reflection prism 400.
  • the laser light reflected by the reflection surface S of the reflection prism 400 can be transmitted in a direction away from the substrate 100.
  • the cross-sectional shape of the reflective prism 400 perpendicular to the substrate 100 may be a right-angled trapezoid. That is, the reflective prism 400 may be a prism with a right-angled trapezoidal cross-sectional shape. In this way, it is not only easy to process the reflective prism 400, but also it is possible to ensure that the difficulty of fixing the reflective cold processing prism 400 on the substrate 100 is relatively low.
  • the reflective prism 400 in the laser 000 is directly fixed on the substrate 100, and the light-emitting chip 300 in the laser 000 needs to be fixed on the substrate 100 through the heat sink 200, and the laser emitted by the light-emitting chip 300 in the laser 000 is usually in a divergent state. Therefore, the thickness h1 of the heat sink 200 in the laser 000 will affect the light extraction efficiency of the light-emitting chip 300.
  • the distance d between the light-emitting chip 300 and the reflective surface S of the reflective prism 400 will also affect the light extraction efficiency of the light-emitting chip 300.
  • the following embodiments are all described by taking the distance d1 between the light-emitting chip 300 and the reflective surface S of the reflective prism 400 in the direction of the optical axis of each light-emitting chip 300 in the laser 000 as 0.3 mm to 0.5 mm.
  • the thickness h1 of the heat sink 200 is too small, for example, the thickness h1 of the heat sink 200 is less than 0.2 mm.
  • Figure 20 is a light path diagram of the laser emitted by the light-emitting chip when the thickness of the heat sink provided in an embodiment of the present application is small. The laser emitted by the light-emitting chip 300 in the laser 000 will not be completely emitted to the reflection surface S of the reflection prism 400.
  • the lasers emitted by the light-emitting chip 300 a part of the laser will be directly emitted to the substrate 100, and this part of the laser cannot be reflected by the reflection surface S of the reflection prism 400, resulting in a part of the laser in the light-emitting chip 300 cannot be normally emitted from the laser 000, which in turn results in a low light extraction efficiency of the laser 000.
  • FIG. 21 is a light path diagram of another laser emitted by a light-emitting chip provided in the embodiment of the present application.
  • the laser emitted by the light-emitting chip 300 in the laser 000 can all be directed toward the reflection surface S of the reflection prism 400, so that the reflection surface S of the reflection prism 400 can emit all the lasers emitted by the light-emitting chip 300, thereby making most of the lasers emitted by the light-emitting chip 300 can be emitted from the laser 000, and the light extraction efficiency of the laser 000 is relatively high.
  • the thickness h1 of the heat sink 200 is large, the heat generated by the light emitting chip 300 during the operation of the laser 000 needs to be dissipated by The heat can be conducted to the substrate 100 only through a long heat conduction path, resulting in low efficiency in conducting the heat of the light emitting chip 300 .
  • the thickness h1 of the heat sink 200 in the embodiment of the present application cannot be too large.
  • the thickness h1 of the heat sink 200 needs to be less than or equal to 0.4 mm.
  • the heat sink 200 conducts the heat generated by the light-emitting chip 300 to the substrate 100 through a shorter heat conduction path, so that the heat sink 200 conducts the heat of the light-emitting chip 300 more efficiently. In this way, the heat dissipation efficiency of the light-emitting chip 300 can be further improved through the cooperation of the heat sink 200 and the substrate 100.
  • the thickness h1 of the heat sink 200 is in the range of 0.2 mm to 0.4 mm.
  • the heat sink 200 within this thickness h1 range can not only allow all the lasers emitted by the light-emitting chip 300 to be directed toward the reflecting surface S of the reflecting prism 400, thereby increasing the light extraction efficiency of the laser 000, but can also ensure that the heat sink 200 has a high efficiency in conducting heat to the light-emitting chip 300.
  • the laser provided by the embodiment of the present application includes: a substrate, at least one heat sink and at least one light-emitting chip.
  • the heat conductivity of the heat sink is relatively high.
  • the heat generated by the light-emitting chip can be quickly conducted to the substrate along the heat sink.
  • the thermal conductivity of the composite material of diamond and copper is also relatively high. For this reason, the heat conducted to the substrate can be quickly dispersed, and the substrate can conduct the heat to the outside for heat dissipation.
  • the heat emitted by the light-emitting chip in the laser can be quickly dissipated, so that the operating temperature of the light-emitting chip is relatively low, thereby making the light-emitting effect of the light-emitting chip better, and it can also ensure that the light-emitting chip is not easily damaged due to excessive temperature, thereby ensuring that the reliability of the laser is relatively high.
  • the thickness range of the heat sink is 0.2 mm to 0.4 mm.
  • the heat sink within this thickness range can not only allow all the lasers emitted by the light-emitting chip to be directed to the reflective surface of the reflective prism, so that the light-emitting efficiency of the laser is relatively high, but also ensure that the heat sink has a high efficiency in conducting the heat of the light-emitting chip, which can further improve the heat dissipation efficiency of the light-emitting chip.
  • the laser beam emitted by the light emitting chip 300 is a light beam diverging in the shape of a light cone, as shown in FIG. 19 , the end of the light emitting chip 300 facing the reflective prism 400 needs to protrude from the heat sink 200 to ensure that the laser beam emitted by the light emitting chip 300 will not be directed toward the heat sink 200, thereby improving the efficiency of the laser emitted by the light emitting chip 300 to be directed toward the reflective prism 400.
  • the length d2 of the light emitting chip 300 protruding relative to the heat sink 200 ranges from 5 microns to 10 microns.
  • the substrate 100 in the laser 000 is made of a composite material of diamond and copper, and the hardness of diamond is relatively high, the hardness of the substrate 100 is relatively high compared to a base plate made of oxygen-free copper. In this way, the thickness h2 of the substrate 100 does not need to be too thick, so that the substrate 100 can provide a good support effect for the light-emitting chip 300, and the heat conduction path of the substrate 100 is effectively reduced.
  • the thickness h2 of the substrate 100 in the laser 000 ranges from 1 mm to 4 mm.
  • the substrate 100 can conduct the heat to the outside for heat dissipation through a shorter heat conduction path.
  • the heat dissipation efficiency of the light-emitting chip 300 can be further improved through the cooperation of the heat sink 200 and the substrate 100.
  • the light-emitting chip 300 in the laser 000 can be fixed on the heat sink 200 by solder.
  • FIG. 22 is a schematic diagram of a light-emitting chip fixed on a heat sink provided in an embodiment of the present application.
  • the laser 000 may also include: a solder layer 500 located on the side of the heat sink 200 away from the substrate 100, and the heat sink 200 may be fixedly connected to the corresponding light-emitting chip 300 by the solder layer 500.
  • the solder layer 500 can weld the light-emitting chip 300 after melting, so that the light-emitting chip 300 can be fixed on the heat sink 200.
  • each heat sink 200 in the laser 000 is provided with a solder layer 500 on the side facing away from the substrate 100 , so that each light-emitting chip 300 can be fixed on the corresponding heat sink 200 through the solder layer 500 on the corresponding heat sink 200 .
  • the material of the solder layer 500 may be a gold-tin alloy, wherein the proportion of gold may range from 75% to 80%.
  • the light-emitting layer in the light-emitting chip 300 needs to be grown on a substrate, and the material of the substrate in the light-emitting chip 300 is usually gallium arsenide (GaAs) or gallium nitride (GaN), and the substrate in the light-emitting chip 300 needs to be fixed on the substrate 100 through the solder layer 500. Since there is a certain difference between the thermal expansion coefficient of the material of the substrate in the light-emitting chip 300 and the expansion coefficient of the solder layer 500, the expansion degree of the light-emitting chip 300 and the solder layer 500 when heated is different.
  • GaAs gallium arsenide
  • GaN gallium nitride
  • the thermal stress generated between the light emitting chip 300 and the solder layer 500 will not be too large.
  • FIG23 is a schematic diagram of simulating the heat generation of a light-emitting chip provided in an embodiment of the present application.
  • the thickness of the heat sink 200 is 0.28 mm
  • the length of the light-emitting chip 300 is 1.5 mm
  • the width is 0.3 mm
  • the thickness is 0.1 mm
  • the thermal power of the light-emitting chip 300 is 5 watts
  • the light-emitting chip 300 is arranged at the center of the heat sink 200.
  • the maximum operating temperature of the light emitting chip 300 is 35.071°C, and the maximum thermal stress between the light emitting chip 300 and the solder layer 500 is 6.285 ⁇ 107N/m2 (Newtons per square meter); when the thickness of the solder layer 500 is 4 microns, the maximum operating temperature of the light emitting chip 300 is 35.448°C, and the maximum thermal stress between the light emitting chip 300 and the solder layer 500 is 7.050 ⁇ 107N/m2; when the thickness of the solder layer 500 is 6 microns, the maximum operating temperature of the light emitting chip 300 is 35.448°C, and the maximum thermal stress between the light emitting chip 300 and the solder layer 500 is 7.050 ⁇ 107N/m2; The highest operating temperature of the light emitting chip 300 is 35.822° C., and the maximum thermal stress between the light emitting chip 300 and the solder layer 500 is 8.021 ⁇ 10 7 N/m 2 .
  • the thermal conductivity of the solder layer 500 is low. As the thickness of the solder layer 500 increases, the heat generated by the light emission of the light-emitting chip 300 is difficult to be immediately dissipated, resulting in a high overall operating temperature of the light-emitting chip 300, which in turn leads to a large thermal stress between the light-emitting chip 300 and the solder layer 500. In addition, if the thickness of the solder layer 500 is too thick, the solder between the light-emitting chip 300 and the heat sink 200 may also overflow. The smaller the thickness of the solder layer 500, the lower the overall operating temperature of the light-emitting chip 300, and the smaller the thermal stress between the light-emitting chip 300 and the solder layer 500.
  • the thickness of the solder layer 500 is too small, the welding firmness between the light-emitting chip 300 and the solder layer 500 may be low, resulting in the undesirable phenomenon of voids inside the solder layer 500, which in turn leads to a low fixation firmness between the light-emitting chip 300 and the heat sink 200.
  • the thickness of the solder layer 500 cannot be too thick, and the thickness of the solder layer 500 needs to be less than or equal to 5 microns; the thickness of the solder layer 500 cannot be too thin, and the thickness of the solder layer 500 needs to be greater than or equal to 2 microns. That is, the thickness of the solder layer 500 ranges from 2 microns to 5 microns.
  • the light-emitting chip 300 can be firmly fixed on the heat sink 200 through the solder layer 500, and it can also be ensured that the heat generated by the light-emitting chip 300 can be immediately dissipated through the heat sink 200, so that the overall operating temperature of the light-emitting chip 300 is low, and then the thermal response between the light-emitting chip 300 and the solder layer 500 is small.
  • FIG. 24 is a schematic diagram of the structure of a heat sink provided in an embodiment of the present application.
  • the laser 000 may further include: a first metal layer 600 located between the solder layer 500 and the heat sink 200 , and a second metal layer 700 located between the heat sink 200 and the substrate 100 .
  • the first metal layer 600 between the solder layer 500 and the heat sink 200 in the laser 000 may include a stacked titanium layer 601, a platinum layer 602 and a gold layer 603.
  • the titanium layer 601 in the first metal layer 600 may be fixedly connected to the surface of the heat sink 200.
  • the gold layer 603 in the first metal layer 600 is the metal layer closest to the light-emitting chip 300 in the first metal layer 600, so that the gold layer 603 in the first metal layer 600 can be used as a conductive layer and electrically connected to the electrode (which can be a positive electrode or a negative electrode) of the light-emitting chip 300.
  • the electrode which can be a positive electrode or a negative electrode
  • a solder layer 500 is also provided between the gold layer 603 in the first metal layer 600 and the light-emitting chip 300, and the material of the solder layer 500 is a gold-tin alloy.
  • the gold layer 603 in the first metal layer 600 can be connected to a power source through a wire to achieve the purpose of the power supply supplying power to the light-emitting chip 300 through the gold layer 603 and the gold-tin alloy in the first metal layer 600.
  • the gold layer 603 in the first metal layer 600 can also have strong corrosion resistance, so that the gold layer 603 in the first metal layer 600 can protect the light-emitting chip 300 and prevent the electrode of the light-emitting chip 300 from being oxidized.
  • the platinum layer 602 and the titanium layer 601 in the first metal layer 600 can both serve as adhesive layers to fix the gold layer 603 in the first metal layer 600 on the heat sink 200 .
  • the titanium layer 601 and the platinum layer 602 are first plated in sequence on the side of the heat sink 200 away from the substrate 100, and then the gold layer 603 is plated on the platinum layer 602, thereby ensuring that the gold layer 603 can be firmly set on the heat sink 200.
  • the platinum layer 602 and the titanium layer 601 in the first metal layer 600 both have high thermal conductivity, so the heat generated by the light-emitting chip 300 can be better conducted to the heat sink 200 through the first metal layer 600.
  • the thickness of the first metal layer 600 may be less than 1 micrometer to ensure that the heat generated by the light-emitting chip 300 can be quickly transferred to the heat sink 200 after being transferred to the first metal layer 600 .
  • the second metal layer 700 in the laser 000 may also include: a stacked titanium layer 701, a platinum layer 702 and a gold layer 703.
  • the titanium layer 701 in the second metal layer 700 may also be fixedly connected to the surface of the heat sink 200.
  • each metal layer in the second metal layer 700 between the heat sink 200 and the substrate 100 in the laser 000 can be used as an adhesive layer to fix the heat sink 200 on the substrate 100 .
  • the second metal layer 700 needs to be provided on the side of the heat sink 200 close to the substrate 100 in the present application, so that the heat sink 200 can be fixed on the substrate 100 through the second metal layer 700. Since the gold layer 703 is less difficult to fix to the substrate 100, and more difficult to fix to the heat sink 200, while the titanium layer 701 is less difficult to fix to the heat sink 200, the platinum layer 702 can be used as a transition layer between the gold layer 703 and the titanium layer 701, which can better combine with the gold layer 703 and the titanium layer 701.
  • the titanium layer 701, the platinum layer 702 and the gold layer 703 in the second metal layer 700 are respectively plated on the side of the heat sink 200 close to the substrate 100, not only can the difficulty of fixing the heat sink 200 on the substrate 100 be reduced, but also it can be ensured that the heat sink 200 can be firmly set on the substrate 100.
  • the thickness of the second metal layer 700 may be less than 1 micron to ensure that the heat conducted to the heat sink 200 can be quickly conducted to the substrate 10 by the second metal layer 700 after being conducted to the second metal layer 700 .
  • the thickness of the titanium layer 601 in the first metal layer 600 and the titanium layer 701 in the second metal layer 700 may be equal.
  • the thickness of the platinum layer 602 in the first metal layer 600 and the platinum layer 702 in the second metal layer 700 may be equal, and the thickness of the gold layer 603 in the first metal layer 600 and the gold layer 703 in the second metal layer 700 may be equal.
  • the thickness of the titanium layer 601 in the first metal layer 600 and the titanium layer 701 in the second metal layer 700 may also be different, the thickness of the platinum layer 602 in the first metal layer 600 and the platinum layer 702 in the second metal layer 700 may also be different, and the thickness of the gold layer 603 in the first metal layer 600 and the gold layer 703 in the second metal layer 700 may also be different.
  • This embodiment of the application is not limited to this.
  • the thickness range of the titanium layer in the first metal layer 600 and the second metal layer 700 can be 0.04 microns to 0.08 microns
  • the thickness range of the platinum layer in the first metal layer 600 and the second metal layer 700 can be 0.1 microns to 0.3 microns
  • the thickness range of the gold layer in the first metal layer 600 and the second metal layer 700 can be 0.4 microns to 0.8 microns.
  • the bottom surface D of the reflective prism 400 in the laser 000 may also be plated with a gold layer, and the reflective prism 400 may be fixed on the substrate 100 through the gold layer.
  • the gold layer plated on the bottom surface of the reflective prism 400 has good thermal conductivity, even if the temperature of the reflective prism 400 increases after the laser emitted by the light-emitting chip 3000 irradiates the reflective prism 400, it can be ensured that the reflective prism 400 can quickly conduct the heat to the substrate 100 through the gold layer set on the bottom surface D for heat dissipation.
  • the reflective prism 400 can also be cooled through the substrate 100 to ensure that the reflective prism 400 will not expand and deform greatly due to excessive temperature, so that the laser emitted by the light-emitting chip 300 can always be irradiated on the reflection surface S of the reflective prism 400, thereby ensuring that the light output effect of the laser 000 is good.
  • the above embodiments are schematically illustrated by taking the laser including a heat sink 200 and a light-emitting chip 300 as an example.
  • the laser 000 includes multiple laser stone heat sinks 200 and multiple light-emitting chips 300, as shown in FIG25, FIG25 is a top view of another laser provided in an embodiment of the present application, and the multiple heat sinks 200 in the laser 000 can be arranged in an array in multiple rows and columns, and the side of each heat sink 200 facing away from the substrate 100 is fixed with a corresponding light-emitting chip 300.
  • Figure 26 is a cross-sectional view of the laser shown in Figure 25 at A-A'.
  • the laser 000 may also include: a frame 800 fixedly connected to one side of the substrate 100.
  • Each heat sink 200, each reflection prism 400 and the frame 800 in the laser 000 may be fixed on the same side of the substrate 100, and each heat sink 200, each light-emitting chip 300 and each reflection prism 400 in the laser 000 may be located in the area surrounded by the frame 800.
  • the structure obtained by fixing the substrate 100 and the frame 800 in the laser 000 can be called a tube shell.
  • the materials of the frame 800 and the substrate 100 can be the same or different.
  • the frame 800 is also made of a composite material of diamond and copper
  • the substrate 100 and the frame 800 can be an integrally formed structure.
  • the substrate 100 and the frame 800 can also be two independent structures, and the two can be fixed by welding.
  • the laser 000 may further include: a plurality of electrode pins 900 fixed to the frame 800.
  • the electrode pins 900 may communicate the inside and outside of the enclosed area of the frame 800, and the electrode pins 900 may be electrically connected to the light-emitting chip 300 for transmitting current to the light-emitting chip 300.
  • the electrode pins 900 may be a metal columnar structure.
  • the frame 800 may have a plurality of mounting holes corresponding to the plurality of electrode pins 900, each electrode pin 900 may be inserted into the corresponding mounting hole, and the electrode pins 900 may be fixed to the frame 800 by a sealing material, and the mounting holes may be filled and sealed to ensure the sealing of the accommodating space.
  • the frame 800 in the laser 000 has a light opening K on the side facing away from the substrate 100.
  • the reflective surface S of each reflective prism 400 in the laser 000 reflects the laser emitted by the corresponding light emitting chip 300, the reflected laser can be emitted toward the light opening K of the frame 800, so that the laser can be emitted from the laser 000 through the light opening K.
  • FIG. 27 is a cross-sectional schematic diagram of another laser provided in an embodiment of the present application.
  • the laser 000 may also include: a light-transmitting sealing component 1100 located at the light opening K of the frame 800 , and a collimating lens 1200 located on the side of the light-transmitting sealing component 1100 away from the substrate 100 .
  • the light-transmitting sealing component 1100 can be fixed to the frame 800 to seal the accommodation space enclosed by the substrate 100 and the frame 800 to prevent external moisture and other substances from damaging the light-emitting chip 300.
  • the light-emitting chip 300 can emit a laser to the corresponding reflective prism 50 under the action of the current, and the reflective prism 50 can reflect the received laser to the light-transmitting sealing component 1100.
  • the laser passes through the light-transmitting sealing component 1100 and is emitted to the collimating lens 1200.
  • the collimating lens 1200 can collimate the received laser and then emit it.
  • the material of the light-transmitting sealing member 1100 may be BK7 glass, sapphire, quartz, etc.
  • the collimating lens 1200 may be a free-form surface lens, an aspherical lens, or a Fresnel lens.
  • the light-transmitting sealing component 1100 can be fixed to the frame 800 by using gold-tin solder or sealing glue.
  • the second case is shown in Figure 28, which is a cross-sectional schematic diagram of another laser provided by an embodiment of the present application.
  • the light-transmitting sealing component 1100 can also be fixed to the frame 800 by parallel seam welding.
  • the light-transmitting sealing component 1100 can include a light-transmitting sealing layer 1101 and a sealing frame 1102.
  • the light-transmitting sealing layer 1101 is fixed on the sealing frame 1102.
  • the sealing frame 1102 can be fixed to the frame 800 by parallel seam welding.
  • the laser provided by the embodiment of the present application includes: a substrate, at least one heat sink and at least one light-emitting chip.
  • the heat conductivity of the heat sink is relatively high.
  • the heat generated by the light-emitting chip can be quickly conducted to the substrate along the heat sink.
  • the thermal conductivity of the composite material of diamond and copper is also relatively high. For this reason, the heat conducted to the substrate can be quickly dispersed, and the substrate can conduct the heat to the outside for heat dissipation.
  • the heat emitted by the light-emitting chip in the laser can be quickly dissipated, so that the operating temperature of the light-emitting chip is relatively low, thereby making the light-emitting effect of the light-emitting chip better, and it can also ensure that the light-emitting chip is not easily damaged due to excessive temperature, thereby ensuring that the reliability of the laser is relatively high.
  • the thickness range of the heat sink is 0.2 mm to 0.4 mm.
  • the heat sink within this thickness range can not only allow all the lasers emitted by the light-emitting chip to be directed to the reflective surface of the reflective prism, so that the light-emitting efficiency of the laser is relatively high, but also ensure that the heat sink has a high efficiency in conducting the heat of the light-emitting chip, which can further improve the heat dissipation efficiency of the light-emitting chip.
  • FIG29 The cross-sectional structure of the laser module in the related art is shown in FIG29, including a light-emitting chip 41, a module base plate 43, a circuit layer 44, a solder layer 45, and a module base plate 42.
  • X1 is the heat dissipation path of the light-emitting chip. It can be seen that since the circuit layer 44 and the solder layer 45 are usually made of materials with poor thermal conductivity, the heat of the chip cannot be effectively released through the heat dissipation path.
  • a laser module is provided, as shown in Figures 30 to 32 (Figure 30 is a 3D view of the laser module, Figure 31 is a top view of the light emitting direction of the laser module, and Figure 32 is a cross-sectional view of the laser module of the embodiment of Figure 31 cut along the dotted line L1), the laser module includes at least one laser 1 and a base plate 2, wherein:
  • the laser 1 includes a light emitting chip 11 , a substrate 12 and at least one pin 13 .
  • the light emitting chip 11 is located on one side of the substrate 12 .
  • the pin 13 is located on at least one side of the laser 1 perpendicular to the plane of the substrate 12 and is electrically connected to the light emitting chip 11 .
  • the bottom plate 2 and the substrate 12 are both metal bottom plates, and the light emitting chip 11 is soldered to the substrate 12 .
  • the light emitting chip 11 is a semiconductor light emitting chip, including a light emitting element.
  • the light emitting element receives an electrical signal from the outside through a pin 13 and emits a laser to the outside, and the light emitting direction is away from the substrate 12 .
  • the laser 1 further includes a packaging frame 10, and the packaging frame 10 and the substrate 12 together constitute a closed space for accommodating the light-emitting chip 11.
  • the packaging frames 10 may all be in the shape of a square ring.
  • the orthographic projection of each packaging frame 10 on the substrate 12 may all be rectangular or approximately rectangular.
  • the orthographic projection may be a rounded rectangle or a chamfered rectangle.
  • a rounded rectangle is a shape obtained by changing the corners of a rectangle to rounded corners
  • a chamfered rectangle is a shape obtained by changing the corners of a rectangle to chamfered corners.
  • One side of the bottom plate 2 includes a welding portion 21 and at least one groove 22 . At least a portion of the substrate 12 of a laser 1 is disposed in one groove 22 , and the pin 13 is welded to the welding portion 21 .
  • the size of the groove 22 matches that of the substrate 12.
  • the length and width of the groove 22 may be slightly larger than the length and width of the substrate 12.
  • the outer wall of the substrate 12 may contact the inner wall of the groove 22.
  • the depth of the groove 22 may be set accordingly according to different embodiments. In some embodiments, half of the thickness of the substrate 12 may be located outside the groove 22.
  • the pin 13 can be in direct contact with the welding part 21 or through solder.
  • the welding between the pin 13 and the welding part 21 is lead soldering or tin soldering. The welding methods not specifically mentioned in other embodiments of the present application can be referred to here and will not be repeated.
  • a control circuit is provided inside the base plate 2, and the welding portion 21 is electrically connected to the control circuit inside the base plate 2, thereby forming an electrical connection loop of the control circuit, welding portion, pins, and light-emitting chip.
  • the embodiment of the present application focuses on the packaging structure of the laser, and does not limit the structure of the control circuit inside it.
  • the embodiment of the present application can embed the laser into the base plate by setting a groove, and weld it to the base plate through the pins on both sides, so that the laser and the base plate can be fixed and electrically connected on the basis of eliminating the solder between the laser and the base plate.
  • the heat dissipation path X1 of the light-emitting chip only includes the base plate 2 and the substrate 12, which can improve the heat dissipation effect of the laser and ensure the light-emitting efficiency of the laser.
  • the circuit routing of the light-emitting chip is usually set at the bottom of the laser, which plays the role of electrical connection while welding the bottom to the base plate, and the circuit routing will further lead to poor heat dissipation effect.
  • the electrical connection loop is set on the side of the laser, and a laser only needs to be welded at a few points on the base plate to be fixed, which simplifies the internal circuit structure and welding process of the laser, and further improves the heat dissipation effect of the laser.
  • the laser 1 does not include pins, and the light-emitting chip 11 is directly electrically connected to the base plate 2.
  • the package frame 10 is made of ceramic material
  • the base plate 2 is made of copper material
  • the package frame 10 and the base plate 2 are sealed and welded to form a receiving cavity.
  • the receiving cavity is used to accommodate the light-emitting chip 11 and the protective device 5, and the opening of the receiving cavity away from the base plate 2 is sealed by sapphire sealing glass.
  • An integrated collimating lens group is arranged on the side of the sapphire sealing glass away from the base plate 2.
  • the internal wiring of the receiving cavity is connected to the gold wire of the light-emitting chip 11 and the protective device 5, and then connected to the conductive pattern area on the base plate 2.
  • a laser module includes two lasers, but in implementation, the laser may be one or more, and the multiple lasers may be arranged in sequence along the first direction.
  • the laser may be one or more, and the multiple lasers may be arranged in sequence along the first direction.
  • the laser 1 in the embodiment of the present application may be a monochromatic laser, or may be a polychromatic laser.
  • a monochromatic laser is a laser that can only emit laser light of one color
  • a polychromatic laser is a laser that can emit laser light of multiple colors. If the laser 1 is a monochromatic laser, different lasers 1 may be used to emit laser light of different colors, or may be used to emit laser light of the same color, which is not limited in the embodiment of the present application.
  • the laser 1 may include a first laser and a second laser
  • the first laser may be the laser on the left side of FIG31
  • the second laser may be the laser on the right side of FIG31.
  • the first laser may include a plurality of light-emitting chips
  • the second laser may also include a plurality of light-emitting chips.
  • the plurality of light-emitting chips in the first laser may all be used to emit red lasers
  • the plurality of light-emitting chips in the second laser may be partially used to emit blue lasers, and the other part may be used to emit green lasers.
  • the laser 1 may also include a first laser, a second laser, and a third laser, and the first laser, the second laser, and the third laser are arranged in sequence along the first direction.
  • the first laser, the second laser, and the third laser may all include a plurality of light-emitting chips.
  • the plurality of light-emitting chips in the first laser may all be used to emit red lasers
  • the plurality of light-emitting chips in the second laser may all be used to emit blue lasers
  • the plurality of light-emitting chips in the third laser may all be used to emit green lasers.
  • the slow axes of the lasers emitted by the multiple light-emitting chips 11 in each laser 1 can be parallel to the arrangement direction of the light-emitting chips 11. It should be noted that the transmission speed of the laser in different light vector directions will be different.
  • the light vector direction with fast transmission speed is the fast axis
  • the light vector direction with slow propagation speed is the slow axis
  • the fast axis is perpendicular to the slow axis.
  • the fast axis can be perpendicular to the surface of the light-emitting chip 11, and the slow axis is parallel to the surface of the light-emitting chip 11.
  • the divergence angle of the laser on the fast axis is greater than the divergence angle on the slow axis, such as the divergence angle on the fast axis is basically more than 3 times the divergence angle on the slow axis.
  • the light-emitting chips 11 are arranged with the slow axis of the emitted laser as the arrangement direction. Since the divergence angle of the laser in this direction is small, the distance between the light-emitting chips 11 can be small on the basis of avoiding interference and overlap of the lasers emitted by adjacent light-emitting chips 11, and the setting density of the light-emitting chips 11 can be large, which is conducive to the miniaturization of the laser.
  • the multiple light-emitting chips 11 in the laser can also be arranged in an array, arranged in multiple rows and columns, which is not limited in the embodiments of the present application.
  • each laser may be in the shape of a long strip, and the orthographic projection of each laser on the substrate may be roughly in the shape of a rectangle.
  • the width direction of the rectangle may be parallel to the first direction, and the length direction may be parallel to the second direction.
  • the width direction of the rectangle may be parallel to the second direction, and the width direction may be parallel to the first direction.
  • oxygen-free copper substrate The thermal conductivity of oxygen-free copper substrate is high, which can reach 400W/mK. It has good heat dissipation effect and can further help the light-emitting chip module to dissipate heat.
  • oxygen-free copper is pure copper without oxygen or any deoxidizer residue in theory, it actually still contains very trace oxygen and some impurities. In practice, the oxygen content is not more than 0.003%, the total impurity content is not more than 0.05%, and the copper purity is greater than 99.95%. All materials can be used for oxygen-free copper substrates.
  • the oxygen-free copper substrate further includes a nickel plating layer or a gold plating layer, which can improve the structural strength of the welding point between the oxygen-free copper substrate and other components.
  • the side of the substrate 12 away from the light-emitting chip 11 is in contact with the bottom of the groove 22 , which can increase the heat transfer area and further improve the heat dissipation effect.
  • the bottom plate 2 further includes a first interlocking portion 221 at the bottom of the groove 22, and the side of the substrate 12 away from the light emitting chip 11 includes a second interlocking portion 111, and the first interlocking portion 221 and the second interlocking portion 111 form an interlocking structure.
  • the first interlocking portion 221 is a convex portion
  • the second interlocking portion 111 is a concave portion
  • the first interlocking portion 221 is a concave portion
  • the second interlocking portion 111 is a convex portion.
  • the laser 1 and the base plate 2 can be more tightly and firmly combined, thereby ensuring the overall structural strength of the laser module.
  • the shapes of the first interlocking portion 221 and the second interlocking portion 111 are not limited. In some embodiments, taking the bottom plate 1 shown in FIG. 37 as an example, the shape of the first interlocking portion 221 is X-shaped, and the shape of the second interlocking portion 111 corresponds to the first interlocking portion 221, and is also X-shaped. The sizes of the first interlocking portion 221 and the second interlocking portion 111 match.
  • the groove 22 runs through the base plate 2 .
  • the entire laser module will be placed on a heat sink, as shown in Figure 39, with the side of the bottom plate 2 away from the laser 1 in contact with the external heat sink.
  • Providing a through groove 22 can simplify the manufacturing process of the bottom plate 2, and can also improve the heat dissipation effect of the laser through the external heat sink.
  • the thickness of the bottom plate 2 is relatively small.
  • the substrate 12 contacts the heat sink 3 through a groove 22 that passes through the bottom plate 2 , and the heat dissipation path X1 of the light-emitting chip 11 only includes the substrate 12 and the heat sink 3 , further improving the heat dissipation effect of the laser.
  • the packaging frame of the laser 1 is shown in Figures 41 and 42, including a frame 14, which is connected to the substrate 12 and is located on the same side of the substrate 12 and the light-emitting chip 11.
  • the frame 14 is arranged around the four sides of the light-emitting chip 11 perpendicular to the plane of the substrate 12.
  • the frame 14 includes a metal conductive layer 141 , and the light emitting chip 11 and the pins 13 are electrically connected to the metal conductive layer 141 .
  • the circuit routing of the light-emitting chip 11 is usually set at the bottom of the laser, that is, in the substrate 12, which plays the role of electrical connection while welding the bottom to the base plate.
  • the circuit routing will further lead to poor heat dissipation effect.
  • the embodiment of the present application sets the electrical connection path on the side of the laser, which has a simple structure. While simplifying the internal circuit structure of the laser, it further improves the heat dissipation effect of the laser.
  • the light emitting chip 11 is electrically connected to the metal conductive layer 141 of the frame 14 through the lead 15 inside the laser, and the pin 13 is electrically connected to the metal conductive layer 141 of the frame 14 by welding, thereby realizing an electrical connection path between the light emitting chip 11 and the pin 13.
  • the frame 14 may include the metal conductive layer 141 only in a partial area, or may be provided with the metal conductive layer 141 in all areas, which is not limited here.
  • the metal conductive layer 141 is a deposited tungsten paste layer.
  • the packaging frame of the laser may further include a glass cover plate 16 and a collimating lens 17 .
  • the glass cover plate 16 and the collimating lens 17 may be a sapphire cover plate and a sapphire lens.
  • the divergence angle of the collimating lens 17 is less than 1° and the deviation angle is less than 0.8°, thereby achieving collimation of the light emitted by the light-emitting chip 11 .
  • the frame 14 is welded to the substrate 12 and the glass cover 16 by gold-tin soldering to ensure the airtightness of the laser packaging.
  • the glass cover plate 16 is located on the side of the frame 14 away from the substrate 12, and is used to seal the opening of the side of the frame 14 away from the substrate 12, so as to form a closed cavity together with the substrate 12 and the frame 14.
  • the laser 1 may also not include the glass cover plate 16, and the collimating lens 17 is directly fixed to the surface of the frame 14 away from the substrate 12. In this way, the collimating lens 17, the frame 14 and the substrate 12 together form a closed cavity.
  • the collimating lens 17 is located on the side of the glass cover plate 16 away from the substrate 12.
  • each collimating lens 17 can be integrally formed.
  • the collimating lens 17 is roughly plate-shaped, and the side of the collimating lens 17 close to the substrate 12 is a plane, and the side away from the substrate 12 has one or more convex curved surfaces, and the portion where each convex curved surface of the multiple convex curved surfaces is located is a collimating micro-lens, and the collimating micro-lenses correspond to the multiple light-emitting chips 11 one by one.
  • the packaging frame of the laser 1 also includes an integrated lens 18, the integrated lens 18 includes a lens portion 181 and a side wall portion 182, the integrated lens 18 is connected to the frame 14, the lens portion 181 is located on the side of the light-emitting chip 11 away from the substrate 12, and the side wall portion 182 is arranged around the four sides of the light-emitting chip 11 perpendicular to the plane of the substrate 12.
  • the integrated lens 18 in the above embodiment can reduce the packaging process while ensuring the airtightness of the laser package.
  • the integrated lens 18 can be directly welded to the frame 14, which reduces the process difficulty and reduces the production cost.
  • the lens portion 181 of the integrated lens 18 has a flat surface close to the substrate 12 and a surface away from the substrate 12 having one or more convex curved surfaces, wherein each portion of the multiple convex curved surfaces is a collimating microlens, and the collimating microlenses correspond one-to-one to the multiple light-emitting chips 11.
  • the integrated lens 18 is integrally formed during manufacturing. Dividing it into a lens portion 181 and a sidewall portion 182 is only used to clearly describe the structure of the integrated lens 18, and does not mean that the integrated lens 18 is composed of multiple parts.
  • the integrated lens 18 is a sapphire integrated lens, and the divergence angle of the lens portion 181 is less than 1° and the deviation angle is less than 0.8°, so as to achieve collimation of the light emitted by the light-emitting chip 11 .
  • the frame 14 and the integrated lens 18 are welded by gold-tin soldering to ensure the airtightness of the laser packaging.
  • the laser 11 further includes a light absorbing film for absorbing stray light, and the light absorbing film is arranged in contact with the four inner side walls of the integrated lens 18.
  • the light absorbing film is made of a light-proof material, preferably an aluminum mold.
  • the frame 14 includes an alumina frame.
  • Alumina has high strength and chemical stability, and its raw material source is abundant, which is suitable for manufacturing frames of different shapes.
  • the connection surface between the alumina frame and the substrate 12 includes a metal coating, which is used to improve the firmness and thermal conductivity of the alumina frame when welding with other components.
  • the connection surface between the alumina frame 14 and the above-mentioned glass cover 16 or integrated lens 18 also includes a metal coating.
  • the laser 1 is shown in Figures 44 and 45 (Figure 42 is a top view of the laser light emitting direction, and Figure 43 is a cross-sectional view of the laser of the embodiment of Figure 42 cut along the dotted line L2), and each laser 1 may also include a heat sink 191 and a reflective prism 192.
  • the heat sink 191 and the reflective prism 192 may both correspond to a plurality of light-emitting chips 11 in the laser module.
  • Each light-emitting chip 11 is located on a corresponding heat sink 191, and the heat sink 191 is used to assist the corresponding light-emitting chip 11 in heat dissipation.
  • the material of the heat sink 191 may include ceramics.
  • Each reflective prism 192 is located on the light-emitting side of the corresponding light-emitting chip 11.
  • the light-emitting chip 11 can emit a laser to the corresponding reflective prism 192, and the reflective prism 192 can reflect the laser toward the packaging frame 10 in a direction away from the substrate 12 (such as the X2 direction).
  • the packaging frame may include a glass cover plate 16 and a collimating lens 17 as shown in FIG. 41 , or may include an integrated lens 18 as shown in FIG. 43 .
  • the reflecting prism 192 may be arranged along a direction away from the substrate 12 direction, reflecting the laser toward the collimating lens 17 or the integrated lens 18 corresponding to the light-emitting chip 11, and then the laser can be collimated by the lens and then emitted.
  • the laser module is as shown in Figures 46 and 47 (Figure 46 is a top view of the laser light emitting direction, and Figure 47 is a cross-sectional view of the laser of the embodiment of Figure 46 cut along the dotted line L3), and each laser 1 includes the heat sink 191 and the reflecting prism 192 in the above-mentioned embodiment.
  • the laser module includes at least two lasers 1, each laser 1 includes a positive pin 131 and a negative pin 132, the positive pin 131 is electrically connected to the positive pole of the light-emitting chip 11, and the negative pin 132 is electrically connected to the negative pole of the light-emitting chip 11.
  • the welding portion 21 includes a positive electrode welding portion 211 and a negative electrode welding portion 212 .
  • the positive electrode pin 131 is welded to the positive electrode welding portion 211
  • the negative electrode pin 132 is welded to the negative electrode welding portion 212 .
  • the positive electrode welding portion 211 corresponds one-to-one to the positive electrode pin 131, and similarly, the negative electrode welding portion 212 corresponds one-to-one to the negative electrode pin 132.
  • a laser module includes N lasers 1, which includes N positive electrode welding portions 211 and N negative electrode welding portions 212. Moreover, as shown in Figures 48 and 49, the N positive electrode welding portions 211 are located on the same side, and the N negative electrode welding portions 212 are located on another same side.
  • the base plate 2 also includes a control circuit, a common positive electrode 231 and a common negative electrode 232.
  • the control circuit is located inside the base plate 2.
  • the common positive electrode 231 and the common negative electrode 232 are located on the same side of the substrate 12 and the welding portion 21.
  • the common positive electrode 231 is electrically connected to the control circuit and at least two positive electrode welding portions 211 inside the base plate 2 through a printed circuit.
  • the common negative electrode 232 is electrically connected to the control circuit and at least two negative electrode welding portions 212 inside the base plate 2 through a printed circuit.
  • control circuit can control the emission of all lasers in the laser module by providing electrical signals to the common negative electrode and the common positive electrode.
  • the bottom plate 2 when the number of lasers in a laser module is small, such as two, or three to four as shown in the accompanying drawings, the bottom plate 2 only includes one common positive electrode 231 and one common negative electrode 231, and the common positive electrode 231 connects all the positive electrode welding parts 211, and the common negative electrode 232 connects all the negative electrode welding parts 212, as shown in Figure 49. If the number of lasers in a laser module is large, such as eight, the bottom plate 2 may include two common positive electrodes 231 and two common negative electrodes 231, each common positive electrode 231 is connected to four positive electrode welding parts 211, and each common negative electrode 232 is connected to four negative electrode welding parts 212. The embodiments of other numbers of lasers are similar and will not be described in detail.
  • the common positive electrode 231 and the common negative electrode 232 shown in Figures 48 and 49 are only exemplary. During implementation, the common positive electrode 231 and the common negative electrode 232 can be arranged inside the base plate 2, so that there are no obvious structural features outside the base plate 2, which is also within the protection scope of the present application.
  • the laser module may further include a plurality of power supply pins not shown in the accompanying drawings, the plurality of power supply pins being located on the base plate, and may be located at the bottom or side of the base plate, the power supply pins being connected to the control circuit inside the base plate, and being used to connect to an external power supply, thereby realizing an electrical connection loop from an external power supply, a control circuit, a common electrode, a pin, to a light-emitting chip, thereby triggering each light-emitting chip to emit a laser.
  • the plurality of power supply pins may include a plurality of positive power supply pins and at least one negative power supply pin. The positive power supply pin is used to connect to the positive electrode of an external power supply, and the negative power supply pin is used to connect to the negative electrode of an external power supply.
  • a and B and “A and/or B” in this application are merely a description of the association relationship of associated objects, indicating that three relationships may exist, namely, A exists alone, A and B exist at the same time, and B exists alone.
  • the term "at least one of A, B, and C” indicates that seven relationships may exist, indicating: A exists alone, B exists alone, C exists alone, A and B exist at the same time, A and C exist at the same time, C and B exist at the same time, and A, B, and C exist at the same time.
  • first and “second” are used for descriptive purposes only and are not to be understood as indicating or implying relative importance.
  • the term “at least one” refers to one or more, and the term “multiple” refers to two or more, unless otherwise expressly defined.

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Abstract

本申请公开了一种激光器及激光器模组，属于光电技术领域。该激光器包括：框体、基板、热沉、发光芯片和保护器件；框体和热沉均固定于基板上，热沉、发光芯片和保护器件均位于框体的内部；发光芯片和保护器件均固定于热沉上，且发光芯片和保护器件在热沉的长度方向上具有间距。本申请解决了激光器的散热问题。

Description

激光器模组
本申请要求于2023年6月16日提交的申请号为202310723380.0、发明名称为“发光器件”的中国专利申请，于2023年6月28日提交的申请号为202310773058.9、发明名称为“激光器”的中国专利申请，于2023年6月28日提交的申请号为202321670807.7、实用新型名称为“激光器”的中国专利申请，以及于2023年9月5日提交的申请号为202322406540.7、实用新型名称为“一种激光器模组”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光电技术领域，特别涉及一种激光器模组。
背景技术
随着光电技术的发展，激光器模组被广泛应用。
相关技术中，激光器为激光器模组的重要组成部分，激光器包括发光芯片和保护器件，发光芯片和保护器件间隔排布，发光芯片在发出激光时会产生热量。并且，随着发光芯片的持续发光，因热量聚集极易导致发光芯片的温度超过其正常工作温度上限，进而会影响发光芯片的发光效果，且还会导致发光芯片受到损坏。
发明内容
本申请提供了一种激光器模组，可以解决激光器工作温度较高的问题。激光器模组包括激光器，激光器包括框体、基板、热沉、发光芯片和保护器件，框体和热沉均固定于基板上，热沉、发光芯片和保护器件均位于框体的内部，发光芯片和保护器件均固定于热沉上，所述发光芯片和所述保护器件在所述热沉的长度方向上具有间距，在所述热沉的长度方向上，所述发光芯片的正投影和所述保护器件的正投影部分重叠或者相间隔。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一种实施例中一种相关技术中的发光器件的结构示意图；
图2是本申请一种实施例中一种相关技术中的发光器件的结构示意图；
图3是本申请一种实施例中一种发光器件的结构示意图；
图4是本申请一种实施例中一种发光器件的局部结构示意图；
图5是本申请一种实施例中一种发光器件的局部结构示意图；
图6是本申请一种实施例中一种发光器件的局部结构示意图；
图7是本申请一种实施例中一种发光器件的截面示意图；
图8是本申请一种实施例中一种发光器件的局部结构示意图；
图9是本申请一种实施例中一种发光器件的局部结构示意图；
图10是本申请一种实施例中一种相关技术中的电探针与热沉、发光芯片连接的示意图；
图11是本申请一种实施例中一种电探针与热沉、发光芯片连接的示意图；
图12是本申请一种实施例中一种电探针与热沉、发光芯片连接的示意图；
图13是本申请一种实施例中一种相关技术中的发光器件的局部结构示意图；
图14是本申请一种实施例中一种发光器件的局部结构示意图；
图15是本申请一种实施例中一种发光器件的局部结构示意图；
图16是本申请一种实施例中一种相关技术中的发光器件的局部结构示意图；
图17是本申请一种实施例中一种发光器件的局部结构示意图；
图18是本申请另一种实施例中一种激光器的侧视图；
图19是本申请另一种实施例中一种激光器中的发光芯片出射的激光的光路图；
图20是本申请另一种实施例中一种热沉的厚度较小时发光芯片出射的激光的光路图；
图21是本申请另一种实施例中另一种发光芯片出射的激光的光路图；
图22是本申请另一种实施例中一种发光芯片固定在热沉上的示意图；
图23是本申请另一种实施例中一种对发光芯片的发热进行模拟的示意图；
图24是本申请另一种实施例中一种热沉的结构示意图；
图25是本申请另一种实施例中另一种激光器的俯视图；
图26是图8示出的激光器在A-A’处的截面图；
图27是本申请另一种实施例中又一种激光器的截面示意图；
图28是本申请另一种实施例中再一种激光器的截面示意图；
图29是本申请又一种实施例中相关技术中一个激光器模组的截面结构示意图；
图30是本申请又一种实施例中一个或多个实施例的激光器模组的3D结构示意图；
图31是本申请又一种实施例中一个或多个实施例的激光器模组的平面结构示意图；
图32是本申请又一种实施例中一个或多个实施例的激光器模组的截面结构示意图；
图33是本申请又一种实施例中另外一个或多个实施例的激光器模组的3D结构示意图；
图34是本申请又一种实施例中另外一个或多个实施例的激光器模组的截面结构示意图；
图35是本申请又一种实施例中另外一个或多个实施例的激光器模组的截面结构示意图；
图36是本申请又一种实施例中另外一个或多个实施例的激光器模组的截面结构示意图；
图37是本申请又一种实施例中另外一个或多个实施例的底板的平面结构示意图；
图38是本申请又一种实施例中另外一个或多个实施例的激光器模组的截面结构示意图；
图39是本申请又一种实施例中另外一个或多个实施例的激光器模组的截面结构示意图；
图40是本申请又一种实施例中另外一个或多个实施例的激光器模组的截面结构示意图；
图41是本申请又一种实施例中另外一个或多个实施例的激光器模组的截面结构示意图；
图42是本申请又一种实施例中另外一个或多个实施例的激光器模组的平面结构示意图；
图43是本申请又一种实施例中另外一个或多个实施例的激光器模组的截面结构示意图；
图44是本申请又一种实施例中一个或多个实施例的激光器的平面结构示意图；
图45是本申请又一种实施例中一个或多个实施例的激光器的截面结构示意图；
图46是本申请又一种实施例中另外一个或多个实施例的激光器模组的平面结构示意图；
图47是本申请又一种实施例中另外一个或多个实施例的激光器模组的截面结构示意图；
图48是本申请又一种实施例中另外一个或多个实施例的激光器模组的3D结构示意图；
图49是本申请又一种实施例中另外一个或多个实施例的激光器模组的平面结构示意图。
具体实施方式
为使本申请的目的、技术方案和优点更加清楚，下面将结合附图对本申请实施方式作进一步地详细描述。
近年来，电子器件的小型化、便携化已经成为大趋势。在显示产品行业，传统液晶电视由于尺寸大、重量重等问题已不再是消费者购买电视的第一选择，逐渐地，微型投影等小尺寸、轻量级的显示产品深受大众喜爱。在大趋势的驱动下，作为显示产品核心部件的激光器模组自然也是逐渐向小型化发展。
激光器模组主要包括激光器和底板，激光器和底板相连，且激光器和底板之间通过引脚实现电连接。其中，底板用于为激光器提供安装基础，激光器则用于发射激光，为激光器模组中的关键功能部件。下面先对发光器进行介绍说明。
在相关技术中，激光器包括框体1、基板2、热沉3、发光芯片4和保护器件5，框体1和热沉3均固定于基板2上，且热沉3位于框体1的内部，发光芯片4和保护器件5位于热沉3上。激光器中包括多个热沉3，且每个热沉3上均具有发光芯片4和保护器件5。
为实现发光期间的小型化，就需要在更小的激光器的框体1内贴装相同数量甚至更多数量的发光芯片4(热沉3)，即在框体1内实现发光芯片4的密集化排布，这就意味着需要减小相邻两颗发光芯片4之间的距离L，导致积热严重，不利于散热。如图1所示，相邻两颗发光芯片4之间距离L受发光芯片4的宽度、热沉3的宽度和用于贴装热沉3的胶水6溢出尺寸的影响。
目前，一方面，受限于技术问题，暂时无法将发光芯片4尺寸做小。另一方面，受限于设备能力和可靠性要求，胶水6溢出尺寸也无法进一步缩小，否则容易导致热沉3的脱落。因此，如何将热沉3的宽度减小成为了解决激光器小型化问题的关键。
此外，由于发光芯片4的抗静电能力较弱，因此需要在热沉3上放置一个保护器件5与发光芯片4并联，以此起到对发光芯片4保护的作用。
相关技术中，如图2所示，保护器件5焊接在热沉3上，发光芯片4与保护器件5沿热沉3的宽度方 向X并列排布。由于设备放置发光芯片4和保护器件5时有一定的误差，为避免发光芯片4和保护器件5相撞，需要在发光芯片4和保护器件5之间留有一定的安全距离a，这使得发光芯片4和保护器件5在宽度方向上占据的尺寸为m+a+n，导致热沉3的宽度较大。在这种情况下，热沉3的尺寸难以进一步缩小。
鉴于上述技术问题，在本申请一种实施例中，提供了一种激光器，如图3和图4所示，激光器包括框体1、基板2、热沉3、发光芯片4和保护器件5。框体1和热沉3均固定于基板1，且热沉3、发光芯片4和保护器件5均位于框体1的内部。发光芯片4和保护器件5固定于热沉3，且发光芯片4和保护器件5在热沉3的长度方向Y上具有间距。
热沉3、发光芯片4和保护器件5组成的部件可以称为COS(Chip On Submount，嵌入式芯片)。
发光芯片4也可以称为蓝绿芯片，发光芯片4的宽度可以为0.1mm-0.3mm，例如，发光芯片4的宽度为0.2mm。发光芯片4的发光点位于发光芯片4远离保护器件5的一端，发光点所在的一端可以称为发光芯片4的前端，靠近保护器件5的一端称为发光芯片4的后端。发光芯片4工作时会发出大量的热，热沉3用于吸收发光芯片4散发的热量。
保护器件5也可以称为保护元件，保护器件5可以为齐纳二极管、稳压管，保护器件5的宽度可以为0.2-0.4mm，例如，保护器件5的宽度可以为0.3mm。保护器件5与发光芯片4并联，以提高发光芯片4的抗静电能力。
本申请实施例提供的激光器，通过设置发光芯片4和保护器件5在热沉3的长度方向具有间距，使得发光芯片4和保护器件5之间不需要在宽度方向具有安全距离，从而，能够减小发光芯片4和保护器件5在宽度方向所占据的尺寸，使得激光器的宽度减小，有利于激光器的小型化。
另外，需要说明的是，由于激光器的框体1的长度较长，且沿激光器的框体1的长度方向排布的相邻两个热沉3之间的距离较长，因此，与相关技术中的激光器相比，虽然发光芯片4和保护器件5在长度方向上占据了更大的尺寸，但也不会使得框体1的长度变长，不会对激光器的小型化产生不利影响。
下面，对发光芯片4和保护器件5的排布方式进行示例性说明：
在一些示例中，如图4和图5所示，发光芯片4和保护器件5在热沉3的长度方向Y的投影至少部分重合。
在一些示例中，如图5所示，假设发光芯片4与保护器件5沿热沉3的长度方向Y的投影重合部分的长度为c，则发光芯片4和保护器件5在热沉3的宽度方向X所占据的尺寸为m+n-c。
其中，c也可以为0，此时发光芯片4的侧边和保护器件5的侧边重合。
为了进一步减小发光芯片4和保护器件5在宽度方向X占据的尺寸，在一些示例中，如图4所示，发光芯片4在热沉3的长度方向Y的投影全部落在保护器件5沿热沉3的长度方向Y的投影上。其中，发光芯片4的宽度m小于保护器件5的宽度n。
这样，发光芯片4和保护器件5在热沉3的宽度方向X占据的尺寸为保护器件5的宽度n。
在另一些示例中，也可以是保护器件5在热沉3的长度方向Y的投影全部落在发光芯片4在热沉3的长度方向Y的投影上。其中，发光芯片4的宽度m大于保护器件5的宽度n。
这样，发光芯片4和保护器件5在热沉3的宽度方向X占据的尺寸为发光芯片4的宽度m。
对于上述两种情况，均能够实现发光芯片4和保护器件5在宽度方向X占据的尺寸最小，能够使得激光器的宽度最小。
在一些示例中，如图4所示，发光芯片4的对称轴和保护器件5的对称轴重合。
在一些示例中，发光芯片4的第一轴线A与保护器件5的第二轴线B在热沉3的宽度方向X的距离为0-0.35mm。
根据实际测定，当第一轴线A与第二轴线B的距离为0-0.35mm，发光芯片4和保护器件5在热沉3的宽度方向X占据的尺寸小于现有的方案所占据的尺寸。
在另一些示例中，如图6所示，发光芯片4和保护器件5在热沉3的长度方向Y的投影也可以不重合。例如，在宽度方向上的间距为b。
对于这种情况，由于发光芯片4和保护器件5之间不需要在宽度方向X存在安全距离，所以，b能够小于相关技术中的安全距离a，从而，仍然能够实现减小热沉3的宽度的目的。其中，b最小可以为0。
在一些示例中，如图7所示，热沉3包括依次排布的热沉基板31、金层32和金锡层33，金锡层33的宽度小于金层32的宽度，金层32的宽度小于热沉基板31的宽度，发光芯片4和保护器件4焊接在金锡层33上。
金锡层33的结构与发光芯片4、保护器件5的排布方式有关，下面，结合发光芯片4和保护器件5的排布方式，对金锡层33的实现方式进行示例性说明：
在一些示例中，如图4和图5所示，金锡层33为一体式金锡层。
对于这种情况，将发光芯片4和保护器件5焊接在热沉3上时，只需对金锡层33共晶一次，便可将 发光芯片4和保护器件5均焊接在金锡层33，从而节省了共晶工时，提高了激光器的制备效率。
在一些示例中，如图4所示，金锡层33呈长条形，且沿着热沉3的长度方向Y延伸，发光芯片4和保护器件5沿金锡层33的长度方向依次排布。
在一些示例中，如图5所示，金锡层33呈L形，金锡层33包括第一区域331和第二区域332，第一区域331呈长条状，且沿热沉3的长度方向延伸，第二区域332位于第一区域331的一侧。发光芯片4位于第一区域331，保护器件5的一部分位于第二区域332，另一部分位于第一区域331。
在上述实现方式中，将金锡层33设计为L形，发光芯片4、保护器件5和金锡层33之间，可以是预置的一体L型金锡焊接，这样可以同时实现对发光芯片4、保护器件5的焊接，有效的提高了焊接效率。
当然，为了实现上述一体L型金锡焊接，发光芯片4和保护器件5之间在宽度方向X和长度方向Y上均设置有安全距离。在宽度方向X上，发光芯片4的第一轴线A和保护器件5的第二轴线B之间的距离，大于发光芯片4的宽度m和保护器件5的宽度n之和的一半。
如此设置发光芯片4和和保护器件5之间的位置关系，一方面减少了激光器宽度方向的尺寸，利于多排布一些发光芯片4(相同的空间范围内，宽度方向每个封装芯片的尺寸变小，则留出空间可以多排布芯片)。另一方面，在打线时，不会形成遮挡或重叠，这样提高打线的可靠性，降低难度。
当然，在另一些示例中。金锡层33可以呈其他形状，只要仍然能够实现发光芯片4和保护器件5的上述排布形式即可，本申请实施例对此不做限定。
在另一些示例中，如图8所示，金锡层33包括分隔的第一金锡层33a和第二金锡层33b，第一金锡层33a和第二金锡层33b在热沉3的长度方向Y上具有间距，发光芯片4位于第一金锡层33a，保护器件5位于第二金锡层33b。
其中，第一金锡层33a和第二金锡层33b在热沉3的长度方向Y上的投影至少部分重合。
在一些示例中，如图8所示，第二金锡层33b位于第一金锡层33a的一侧，第一金锡层33a和第二金锡层33b在热沉3的长度方向Y上的投影部分重合。
在另一些示例中，如图9所示，第一金锡层33a和第二金锡层33b沿热沉3的长度方向Y上的投影完全重合。此时，发光芯片4的第一轴线A和保护器件5的第二轴线B可以重合。
在完成发光芯片4、保护器件5与金锡层33的共晶后，需要对激光器进行老化测试。在对激光器进行老化测试时，需要将激光器放置在散热底板上，并采用电探针7将金层32、发光芯片4与散热底板连接。待老化测试完成后，摘除金层32和发光芯片4上的电探针7。
相关技术中，如图10所示，假设第二金锡层33b位于第一金锡层33a的右侧，由于发光芯片4所在的第一金锡层33a与保护器件5所在的第二金锡层33b之间存在间距，则会导致第一金锡层33a右侧的金层32的面积大于第一金锡层33a左侧的金层32的面积，同时会导致发光芯片4所在的位置会相对于热沉3的轴线向左偏移，从而导致了电探针7相对于发光芯片4分布不均匀。
这样，一方面，由于电探针7会插接在金层32上，从而对金层32产生拉力，进而导致发光芯片4左侧的金层32与发光芯片4右侧的金层32受力不均匀。而由于发光芯片4焊接在金层32上的第一金锡层33a，因此金层32受力不均匀也会导致发光芯片4受到的拉力不均匀，使得发光芯片4的左侧所受的拉力大于发光芯片4的右侧所受的拉力，从而提高了发光芯片4受损的风险。
另一方面，由于激光器的宽度较宽，因此容易使得未与电探针7连接的金层32区域与散热底板不能充分接触，尤其是发光芯片4右侧的金层32难于和散热底板充分接触，进而影响对激光器的散热效果，导致激光器容易损坏。
由于本申请实施例提供的激光器中，发光芯片4和保护器件5沿热沉3的长度方向Y的投影至少部分重合，故金锡层33所占区域的宽度较窄，因此可以缩小发光芯片4两侧所受拉力的差距。
为了，在一些示例中，如图11和图12所示，金锡层33两侧的金层32的宽度相等。
这样，对激光器进行老化测试时，一方面，能够使得电探针7在发光芯片4左右两侧的金层32上的分布更加均匀，从而能够使金层32受力更加均匀，进而使得发光芯片4左右两侧所受的拉力更加均匀，使得发光芯片4不易受损。
另一方面，由于此时金锡层33的宽度较小，即热沉3的宽度较小，因此使得热沉3与散热底板能够充分接触，从而有利于激光器的散热。
在一些示例中，发光芯片4两侧的金层32的宽度均可以为0.2mm-0.4mm。
示例性的，金锡层33两侧的金层32的宽度均可以为0.2mm。
需要说明的是，金层32的宽度不能过小，一方面，金锡层33两侧的金层32的宽度至少要大于电探针7的宽度，从而保证电探针7能够与金层32连接。
另一方面，金层32的宽度过小会影响热沉3的散热效果，不利于对发光芯片4进行散热，从而导致发光芯片4容易损坏。
在一些实例中，如图12所示，发光芯片4两侧的金层32的长度也可以相同。
在一些实例中，如图3所示，激光器包括多个热沉3、多个发光芯片4和多个保护器件5，且热沉3、发光芯片4和保护器件5的数量相等。如图14所示，位于第一热沉上的发光芯片4与第二热沉的金层32通过金线8连接，位于第一热沉上的保护器件5与第二热沉的金层32通过金线8连接。其中，第一热沉和第二热沉为相邻的两个热沉3。
其中，热沉3在基板2上呈阵列排布，且热沉3的宽度方向与基板2的宽度方向一致，每一行的热沉3均沿基板2的宽度方向排列，且每一行的热沉3上的发光芯片3串联。
由于激光器中具有多个均匀排布的发光芯片4(热沉3)，因此在激光器制备完成后，需要将相邻的发光芯片4(热沉3)之间进行电连接，使得相邻发光芯片4之间实现串联。相邻两个发光芯片4之间需要通过金线8电连接，且每个金线8的两端通过焊点9焊接在热沉3、发光芯片4或保护器件5上。由于相邻两个发光芯片4电连接后，两个发光芯片4之间通过的电流比较大，而金线8的线径较小，故金线8能承受的最大电流也比较小。因此为避免电路过大而熔断金线8，通常会采用三根金线8将相邻两个发光芯片4电连接。这样，会降低通过每根金线8的电流，从而使得金线8不易被熔断。
如图13所示，相关技术中，发光芯片4通过三根金线8与相邻热沉3上的金层32电连接，由于金层32和第一金锡层33a均为金属层，故金层32和第一金锡层33a能够导电，从而使得电流流经发光芯片4后能够依次通过第一金锡层33a和金层32，然后流经相邻激光器上发光芯片4，从而实现相邻两个发光芯片4之间的串联。
为提高发光芯片4的抗静电能力，通常将发光芯片4与保护器件5并联。相关技术中，发光芯片4与保护器件5之间通过一根金线8电连接，发光芯片4和保护器件5上均具有相应的焊点9。发光芯片4的表面具有金属层，因此各个金线8通电后，一部分电流流经发光芯片4的内部，另一部分电流通过发光芯片4的表面流经保护器件5，从而实现发光芯片4与保护器件5的并联。由上述可知，相关技术中的发光芯片4的表面具有四个焊点9。其中，焊点9也可以称为焊球。
本申请实施例提供的激光器中，由于发光芯片4和保护器件5的排布方式与相关技术中的不同，因此电连接的方式也做了相应调整。
如图14和图15所示，发光芯片4通过三根金线8与相邻热沉3上的金层32电连接，发光芯片4和金层32上均具有相应的焊点9。由于金层32不易因焊接而受到损伤，因此将保护器件5通过一跟金线8与相邻激光器上的金层32电连接，保护器件5和金层32上具有相应的焊点9。
由此可知，本申请实施例提供的激光器中的发光芯片4表面具有三个焊点。其中，发光芯片4上的焊点9和金层32上的焊点9均匀排布。
其中，金层32和金锡层33均为可导电的材料，因此发光芯片4通过金线8与相邻激光器上的金层32电连接，就能实现发光芯片4与相邻激光器上的发光芯片4电连接，进而实现多个发光芯片4之间的串联。各个金线8通电后，一部分电流流经发光芯片4的内部，另一部分电流不再经过发光芯片4的表面而是直接通过保护器件5，从而实现了发光芯片4和保护器件之间的并联，进而提高了发光芯片4的抗静电能力。
与相关技术相比，本申请实施例提供的激光器中，发光芯片4的表面的焊点9较少，因此能够减小焊接过程对发光芯片4的损伤。
此外，发光芯片4表面的焊点9减少后，三个焊点9可以整体向发光芯片4的后端移动，使得焊点9远离发光芯片4的前端，即焊点9远离发光芯片4的发光点，从而降低焊点9对发光芯片4的发光点造成损伤的风险。
需要补充说明的是，对于图16示出的相关技术中的技术方案，即使也将发光芯片4和保护器件5之间的金线8，变更为保护器件5和金层32之间的金线8，但由于发光芯片4和保护器件5并列排布，所以，该金线8会阻碍其它三根金线8向着发光芯片4的后端移动，使得发光芯片4的发光点仍然还会受到焊点9较大的影响。若仅将发光芯片4上的焊点9向发光芯片4的后端移动，则对应的三根金线8会倾斜，靠近保护器件5的金线8可能会与保护器件5和金层32之间的金线8产生交叉碰撞，因此，相关技术中，仅将发光芯片4上的焊点9向发光芯片4的后端移动也是不可行的。
热沉3、发光芯片4和保护器件5组成的组件可以称为COS，如图17所示，多个COS串联后，位于两端的两个COS分别与第一电性连接件10、第二电性连接件11电连接。第一电性连接件10、第二电性连接件11均与基板2电连接，基板2上具有驱动电路，驱动电路能够通过第一电性连接件10或第二电性连接件11向发光芯片4发送电信号，从而驱动发光芯片4发射激光。其中，第一电性连接件10和第二电性连接件11可以为PIN脚。
假设驱动电路通过第一电性连接件10向COS发送电信号，则第一电性连接件10传导出的电流，一部分流经发光芯片4，另一部分流经保护器件5，然后再汇合到金层32上。该金层32上的电流再进入下一个COS，一部分流经发光芯片4，另一部分流经保护器件5，然后流经第二电性连接件11。
在一些示例中，热沉3(COS)数量可以为16-36。
例如，热沉3(COS)的数量可以为20，可以将多个热沉3(COS)呈四行五列均匀分布。其中，每一行的(COS)串联，且每一行COS中位于两端的COS均分别与第一电性连接件10、第二电性连接件11电连接。
在一些示例中，如图3所示，激光器还包括盖板12和透镜组件13，框体1、盖板12和透镜组件13依次排布。透镜组件13包括多个透镜，且透镜的数量与发光芯片4的数量相同，透镜用于汇聚发光芯片4发出的激光。
在本申请另一种实施例中，提供了一种激光器，请参考图18，图18是本申请实施例提供的一种激光器的侧视图。激光器000可以包括：基板100、至少一个热沉200和至少一个发光芯片300。
激光器000中的至少一个热沉200可以位于基板100的一侧，且各个热沉200均与基板100固定连接。
激光器000中的至少一个发光芯片300可以与至少一个热沉200一一对应，每个发光芯片300可以位于对应的热沉200背离基板100的一侧，且每个发光芯片300可以与对应的热沉200固定连接。
需要说明的是，激光器000中的热沉200是指采用金刚石制成的热沉，激光器000中的基板100是指采用金刚石和铜的复合材料制成的底板。
还需要说明的是，金刚石的导热系数较高，其导热能力较高。这里，材料的热传导能力可以通过导热系数反映，导热系数越高，表示该材料的热传导能力越强。导热系数的单位为瓦/米·开，也可以写为W/(m·k)。金刚石的导热系数高达2000W/(m·k)，因此，采用金刚石制成的热沉(也即热沉200)的导热系数较高。这样，在激光器000的工作过程中，发光芯片300产生的热量可以迅速通过热沉200沿垂直于基板100的方向进行传导，且可以传导至基板100上。并且，金刚石和铜的复合材料的导热系数也较高，为此，传导至基板100上的热量可以迅速散开，且基板100可以将热量传导至外界以进行散热。如此，在激光器000工作时，激光器000中的发光芯片300发出的热量能够迅速的散出，使得发光芯片300的工作温度较低，进而使得发光芯片300的发光效果较好，且还可以保证发光芯片300不易因温度过高而受到损坏，从而可以保证激光器000的可靠性较高。
在一些实施例中，如图18所示，激光器000还可以包括：位于基板100一侧的至少一个反射棱镜400。其中，激光器000中的各个反射棱镜400均可以与基板100固定连接，且至少一个反射棱镜400可以与至少一个发光芯片300一一对应的，每个发光芯片300的出光面可以朝向对应的反射棱镜400的反射面S。
其中，反射棱镜400朝向基板100的一面为反射棱镜400的底面D，反射棱镜400的底面D可以固定在基板100上，且反射棱镜400的底面D与反射面400之间的夹角锐角。
在这种情况下，请参考图19，图19是本申请实施例提供的一种激光器中的发光芯片出射的激光的光路图。激光器000中的发光芯片300出射激光，可以射向对应的反射棱镜400的反射面S，且可以被该反射棱镜400的反射面S反射。这里，被反射棱镜400的反射面S反射的激光可以沿朝向背离基板100的方向传输。
需要说明的是，反射棱镜400中垂直于基板100的截面形状可以为直角梯形。也即是，反射棱镜400可以为截面形状为直角梯形的棱镜。这样，不仅可以便于加工反射棱镜400，还能够保证将反射冷加工400固定在基板100上的难度较低。
在本申请中，由于激光器000中的反射棱镜400是直接固定在基板100上的，而激光器000中的发光芯片300需要通过热沉200固定在基板100上，且激光器000中的发光芯片300出射的激光通常是呈发散状态的。因此，激光器000中的热沉200的厚度h1会影响发光芯片300的出光效率。这里，在激光器000中的每个发光芯片300的光轴所在方向上，该发光芯片300与反射棱镜400的反射面S之间的距离d也会影响发光芯片300的出光效率。以下实施例均是以在激光器000中的每个发光芯片300的光轴所在方向上，该发光芯片300与反射棱镜400的反射面S之间的距离d1范围为：0.3毫米至0.5毫米为例进行说明的。
在这种情况下，若热沉200的厚度h1过小，例如，热沉200的厚度h1小于0.2毫米。则，请参考图20，图20是本申请实施例提供的一种热沉的厚度较小时发光芯片出射的激光的光路图，激光器000中的发光芯片300出射的激光不会完全射向反射棱镜400的反射面S。该发光芯片300出射的激光中，存在一部分激光会直接射向基板100，这部分激光无法被反射棱镜400的反射面S反射，导致此发光芯片300中存在一部分激光无法正常从激光器000出射，进而导致激光器000的出光效率较低。
为此，本申请实施例中的热沉200的厚度h1不能过小，示例的，该热沉200的厚度h1需要大于或等于0.2毫米。在这种情况下，如图21所示，图21是本申请实施例提供的另一种发光芯片出射的激光的光路图，当热沉200的厚度h1大于或等于0.2毫米时，激光器000中的发光芯片300出射的激光可以全部射向反射棱镜400的反射面S，使得反射棱镜400的反射面S能够对发光芯片300出射的全部的激光进行发射，进而使得发光芯片300出射的大部分的激光均能够从激光器000出射，该激光器000的出光效率较高。
此外，若热沉200的厚度h1较大，则，在激光器000工作过程中，发光芯片300产生的热量需要经 过较长的导热路径才能够传导至基板100上，导致对发光芯片300的热量进行传导的效率较低。
为此，本申请实施例中的热沉200的厚度h1不能过大，示例的，该热沉200的厚度h1需要小于或等于0.4毫米。在这种情况下，热沉200将发光芯片300产生的热量传导至基板100上时所经过的导热路径较短，使得热沉200对发光芯片300的热量进行传导的效率较高，这样，可以进一步的提高通过热沉200和基板100的配合以对发光芯片300进行散热的散热效率。
因此，在本申请实施例中，热沉200的厚度h1范围为0.2毫米至0.4毫米，在此厚度h1范围内的热沉200不仅能够让发光芯片300出射的激光全部射向反射棱镜400的反射面S，使得激光器000的出光效率较高，还能够保证热沉200对发光芯片300的热量进行传导的效率较高。
综上所述，本申请实施例提供的激光器，包括：基板、至少一个热沉和至少一个发光芯片。热沉的导热系数较高，在激光器的工作过程中，发光芯片产生的热量可以迅速通过热沉沿传导至基板上。并且，金刚石和铜的复合材料的导热系数也较高，为此，传导至基板上的热量可以迅速散开，且基板可以将热量传导至外界以进行散热。如此，在激光器工作时，激光器中的发光芯片发出的热量能够迅速的散出，使得发光芯片的工作温度较低，进而使得发光芯片的发光效果较好，且还可以保证发光芯片不易因温度过高而受到损坏，从而可以保证激光器的可靠性较高。此外，热沉的厚度范围为0.2毫米至0.4毫米，在此厚度范围内的热沉不仅能够让发光芯片出射的激光全部射向反射棱镜的反射面，使得激光器的出光效率较高，还能够保证热沉对发光芯片的热量进行传导的效率较高，可以进一步的提高对发光芯片进行散热的散热效率。
在本申请实施例中，由于发光芯片300发出的激光光束为呈光锥状发散的光束，因此，如图19所示，发光芯片300朝向反射棱镜400的端部需要凸出于热沉200，以保证发光芯片300发出的激光光束不会射向热沉200，进而可以提高发光芯片300出射的激光射向反射棱镜400的效率。这里，在发光芯片300的光轴方向上，发光芯片300相对于热沉200凸出的长度d2范围为：5微米至10微米。这样，既可以保证发光芯片300出射的激光可以全部全部射向反射棱镜400，还可以保证发光芯片300与热沉200的接触面积较大，以保证热沉200对发光芯片300的导热效率较高。
在一些实施例中，如图18和图19所示，由于激光器000中的基板100是由金刚石和铜的复合材料制成的，而金刚石的硬度较大。因此，相比于采用无氧铜制成的底板，基板100的硬度较大。如此，基板100的厚度h2无需过厚，就能够让基板100对发光芯片300起到较好的支撑效果，有效的减小了基板100的导热路径。
示例的，激光器000中的基板100的厚度h2范围为：1毫米至4毫米。这样，热沉200将发光芯片300产生的热量传导至基板100上后，基板100经过较短的导热路径，就能够将此热量传导至外界进行散热。如此，可以进一步的提高通过热沉200和基板100的配合以对发光芯片300进行散热的散热效率。
在本申请实施例中，激光器000中的发光芯片300可以通过焊料固定在热沉200上。示例的，如图22所示，图22是本申请实施例提供的一种发光芯片固定在热沉上的示意图。激光器000还可以包括：位于热沉200背离基板100一侧的焊料层500，热沉200可以通过焊料层500与对应的发光芯片300固定连接。这里，焊料层500可以在熔化后焊接发光芯片300，使得发光芯片300可以固定在热沉200上。
需要说明的是，激光器000中的每个热沉200背离基板100一侧均设置有焊料层500，使得各个发光芯片300均可以通过对应的热沉200上的焊料层500固定在对应的热沉200上。
在一些实施例中，焊料层500的材质可以为金锡合金，其中金的占比范围可以为75％～80％。
在本申请中，发光芯片300中的发光层需要在衬底进行生长得到，该发光芯片300中的衬底的材料通常为砷化镓(GaAs)或氮化镓(GaN)，且发光芯片300中的衬底需要通过焊料层500固定在基板100上。由于发光芯片300中的衬底的材料的热膨胀系数与焊料层500的膨胀系数之间存在一定的差异，因此，发光芯片300与焊料层500受热的膨胀程度有所不同。在激光器000工作的过程中，若发光芯片300的工作温度较高，该发光芯片300产生的热量会让发光芯片300的膨胀变形与焊料层500的膨胀变形之间的差异较大，导致发光芯片300与焊料层500之间产生热应力较大。而焊料层500的厚度会直接影响发光芯片300的工作温度，进而会影响发光芯片300与焊料层500的受热膨胀程度，最终会影响发光芯片300与焊料层500之间产生的热应力的大小。为此，通过对焊料层500的厚度进行优化，可以让发光芯片300与焊料层500之间产生的热应力不会过大。
示例的，如图23所示，图23是本申请实施例提供的一种对发光芯片的发热进行模拟的示意图。假设，热沉200的厚度为0.28毫米；发光芯片300的长度为1.5毫米，宽度为0.3毫米，厚度为0.1毫米；发光芯片300的热功率为5瓦；且发光芯片300设置在热沉200的居中位置处。则，当焊料层500的厚度为2微米时，发光芯片300的最高的工作温度为35.071℃，发光芯片300与焊料层500之间的最大热应力为6.285×107N/m2(牛每平方米)；当焊料层500的厚度为4微米时，发光芯片300的最高的工作温度为35.448℃，发光芯片300与焊料层500之间的最大热应力为7.050×107N/m2；当焊料层500的厚度为6微米时，发 光芯片300的最高的工作温度为35.822℃，发光芯片300与焊料层500之间的最大热应力为8.021×107N/m2。
由此可知，焊料层500的导热率较低，随着焊料层500的厚度的增加，发光芯片300的发光产生的热量难以得到即时的散出，导致发光芯片300的整体工作温度偏高，进而会导致发光芯片300与焊料层500之间热应力偏大。此外，若焊料层500的厚度过厚，发光芯片300与热沉200之间焊料还能会产生的溢出的不良现象。而焊料层500的厚度越小，发光芯片300的整体工作温度越底，且发光芯片300与焊料层500之间热应力越小。但是，若焊料层500的厚度过小，可能会导致发光芯片300与焊料层500进行的焊接牢固性较低，导致焊料层500内部产生空洞的不良现象，进而导致发光芯片300与热沉200之间的固定的牢固性较低。
为此，焊料层500的厚度不能过厚，该焊料层500的厚度需要小于或等于5微米；焊料层500的厚度也不能过薄，该焊料层500的厚度需要大于或等于2微米。也即是，焊料层500的厚度范围为2微米至5微米。这样，既可以保证发光芯片300能够通过焊料层500牢固的固定在热沉200上，还能够保证发光芯片300产生的热量能够即时通过热沉200散出，使得发光芯片300的整体工作温度较低，进而使得发光芯片300与焊料层500之间热应较小。
需要说明的是，图23是对发光芯片在热沉的居中位置为例，对发光芯片的发热进行模式的示意，在实际的产品中，发光芯片的发光端需要凸出于热沉。
在一些实施例中，请参考图24，图24是本申请实施例提供的一种热沉的结构示意图。激光器000还可以包括：位于焊料层500与热沉200之间的第一金属层600，以及位于热沉200与基板100之间的第二金属层700。
示例的，激光器000中位于焊料层500与热沉200之间的第一金属层600可以包括：层叠设置的钛层601、铂层602和金层603。其中，第一金属层600中的钛层601可以与热沉200的表面固定连接。
这样，第一金属层600中的金层603为第一金属层600中最靠近发光芯片300的金属层，使得第一金属层600中的金层603可以作为导电层，且与发光芯片300的电极(可以为正极或负极)电连接。这里，由于第一金属层600中的金层603与发光芯片300之间还设置有焊料层500，且焊料层500的材质为金锡合金。因此，第一金属层600中的金层603可以通过导线连接至电源，以实现电源通过第一金属层600中的金层603和金锡合金向发光芯片300供电的目的。可选的，第一金属层600中的金层603还可以具有较强的抗腐蚀性，进而使得第一金属层600中的金层603可以对发光芯片300起到保护作用，防止发光芯片300的电极被氧化。
第一金属层600中的铂层602和钛层601均可以作为粘接层，以将第一金属层600中的金层603固定在热沉200上。
需要说明是，直接将金层603镀在热沉200上的难度较大，为此，本申请中在热沉200背离基板100的一侧先依次镀有钛层601和铂层602后，再在铂层602上镀金层603，进而可以保证金层603可以牢固的设置在热沉200上。此外，第一金属层600中的铂层602和钛层601均具有较高的导热性，因此，发光芯片300产生的热量可以较好的通过第一金属层600传导至热沉200上。
在一些实施例中，第一金属层600的厚度可以小于1微米，以保证发光芯片300产生的热量在传导至第一金属层600上后，第一金属层600能够快速的将此热量传导至热沉200上。
激光器000中的第二金属层700也可以包括：层叠设置的钛层701、铂层702和金层703。其中，第二金属层700中的钛层701也可以与热沉200的表面固定连接。
这里，激光器000中位于热沉200与基板100之间的第二金属层700内的各个金属层均可以作粘接层，以将热沉200固定在基板100上。
需要说明的是，直接将热沉200固定在基板100上的难度较大，为此，本申请中的热沉200靠近基板100的一侧需要设置第二金属层700，使得热沉200可以通过第二金属层700固定在基板100上。又由于金层703与基板100的固定难度较小，且与热沉200的固定难度较大，而钛层701与热沉200的固定难度较小，铂层702可以作为金层703与钛层701之间的过渡层，其能够更好的与金层703与钛层701进行结合。因此，在热沉200靠近基板100的一侧分别镀第二金属层700中的钛层701、铂层702和金层703时，不仅可以降低热沉200固定在基板100上的难度，还可以保证热沉200能够牢固的设置在基板100上。
此外，第二金属层700中的钛层701、铂层702和金层703均具有较高的导热性，因此，发光芯片300产生的热量在传导至热沉200上后，传导至热沉200上的热量能够较好的通过第二金属层700传导至基板100上。
在一些实施例中，第二金属层700的厚度可以小于1微米，以保证传导至热沉200上的热量在传导至第二金属层700上后，第二金属层700能够快速的将此热量传导至基板10上。
在本申请实施例中，第一金属层600中的钛层601和第二金属层700中的钛层701的厚度可以相等， 第一金属层600中的铂层602和第二金属层700中的铂层702的厚度可以相等，第一金属层600中的金层603和第二金属层700中的金层703的厚度可以相等。当然，在其他可能的实现方式中，第一金属层600中的钛层601和第二金属层700中的钛层701的厚度也可以不相同，第一金属层600中的铂层602和第二金属层700中的铂层702的厚度也可以不相同,第一金属层600中的金层603和第二金属层700中的金层703的厚度也可以不相同。本申请实施例对此不做限定。
示例的，第一金属层600和第二金属层700中的钛层的厚度范围均可以为0.04微米至0.08微米，第一金属层600和第二金属层700中的铂层的厚度范围均可以为0.1微米至0.3微米，第一金属层600和第二金属层700中的金层的厚度范围均可以为0.4微米至0.8微米。
在本申请实施例中，激光器000中的反射棱镜400的底面D上也可以镀有金层，该反射棱镜400可以通过此金层固定在基板100上。这里，由于反射棱镜400的底面所镀的金层的导热性较好，因此，即使发光芯片3000出射的激光照射在反射棱镜400后，会让反射棱镜400的温度升高，也可以保证反射棱镜400能够通过底面D上设置的金层迅速将热量传导至基板100上进行散热。为此，通过基板100还可以对反射棱镜400进行散热，以保证反射棱镜400不会因温度过高而产生较大的膨胀变形，使得发光芯片300出射的激光始终都能够照射在反射棱镜400的反射面S上，进而保证激光器000的出光效果较好。
在一些实施例中，上述实施例均是以激光器中包含一个热沉200和一个发光芯片300为例进行示意性说明的。当激光器000中包含多个激光石热沉200和多个发光芯片300时，如图25所示，图25是本申请实施例提供的另一种激光器的俯视图，激光器000中多个热沉200可以排布阵列排布为多行和多列，且各个热沉200背离基板100的一侧均固定有对应的发光芯片300。这里，激光器000中的反射棱镜400的个数也可以为多个，各个反射棱镜400均可以固定在基板100朝向热沉200的一侧，且多个反射棱镜400可以与多个发光芯片300一一对应，每个反射棱镜400可以位于朝向对应的发光芯片300的出光面的一侧，使得每个反射棱镜400的反射面可以反射对应的发光芯片300出射的激光。
在本申请实施例中，如图25和图26所示，图26是图25示出的激光器在A-A’处的截面图。激光器000还可以包括：与基板100的一侧固定连接的框体800。激光器000中的各个热沉200、各个反射棱镜400和框体800均可以固定在基板100的同一侧，且激光器000中的各个热沉200、各个发光芯片300和各个反射棱镜400均可以位于框体800所围成的区域内。
这里，激光器000中的基板100和框体800固定所得到的结构可以称为管壳。可选的，框体800与基板100的材料可以相同也可以不同。例如，当框体800也采用金刚石和铜的复合材料制成时，基板100与框体800可以为一体成型的结构。当然，基板100与框体800也可以为独立的两个结构，且二者之间可以通过焊接相固定。
在一些实施例中，如图25所示，激光器000还可以包括：与框体800固定的多个电极引脚900。电极引脚900可以连通框体800的包围区域的内外，电极引脚900可以与发光芯片300电连接，用于向发光芯片300输送电流。示例的，电极引脚900可以为金属柱状结构。框体800可以具有与多个电极引脚900一一对应的多个安装孔，每个电极引脚900可以插入对应的安装孔，并通过密封材料实现电极引脚900与框体800的固定，以及实现对安装孔的填充密封，保证容置空间的密封。
在本申请实施例中，如图26所示，激光器000中的框体800背离基板100的一侧具有通光口K。激光器000中的各个反射棱镜400的反射面S在将对应的发光芯片300出射的激光反射后，反射后的激光可以射向框体800的通光口K，使得此激光可以通过通光口K从激光器000出射。
在一些实施例中，请参考图27，图27是本申请实施例提供的又一种激光器的截面示意图。激光器000还可以包括：位于框体800的通光口K处的透光密封部件1100，以及位于透光密封部件1100背离基板100一侧的准直透镜1200。
其中，透光密封部件1100可以与框体800固定，以密封基板100与框体800围出的容置空间，以避免外部水汽及其他物质对发光芯片300的损伤。发光芯片300可以在电流的作用下向对应的反射棱镜50发出激光，反射棱镜50可以将接收到的激光反射向透光密封部件1100，该激光穿过透光密封部件1100射向准直透镜1200，准直透镜1200可以将接收到的激光准直后射出。
在一些实施例中，透光密封部件1100的材料可以是BK7玻璃、蓝宝石或石英等材料。准直透镜1200可以为自由曲面透镜、非球面透镜或者菲涅尔透镜。
需要说明的是，透光密封部件1100与框体800之间的连接方式有多种，本申请实施例将以以下两种情况为例进行说明：
第一种情况，如图27所示，透光密封部件1100可以采用金锡焊料或者封口胶与框体800固定。
第二种情况，如图28所示，图28是本申请实施例提供的再一种激光器的截面示意图。透光密封部件1100也可以采用平行缝焊的方式与框体800固定，透光密封部件1100可以包括透光密封层1101和密封框1102，透光密封层1101固定在密封框1102上，密封框1102可以采用平行缝焊的方式与框体800固定。
综上所述，本申请实施例提供的激光器，包括：基板、至少一个热沉和至少一个发光芯片。热沉的导热系数较高，在激光器的工作过程中，发光芯片产生的热量可以迅速通过热沉沿传导至基板上。并且，金刚石和铜的复合材料的导热系数也较高，为此，传导至基板上的热量可以迅速散开，且基板可以将热量传导至外界以进行散热。如此，在激光器工作时，激光器中的发光芯片发出的热量能够迅速的散出，使得发光芯片的工作温度较低，进而使得发光芯片的发光效果较好，且还可以保证发光芯片不易因温度过高而受到损坏，从而可以保证激光器的可靠性较高。此外，热沉的厚度范围为0.2毫米至0.4毫米，在此厚度范围内的热沉不仅能够让发光芯片出射的激光全部射向反射棱镜的反射面，使得激光器的出光效率较高，还能够保证热沉对发光芯片的热量进行传导的效率较高，可以进一步的提高对发光芯片进行散热的散热效率。
前文对激光器模组中的激光器单独的进行了介绍说明，下面对激光器模组的整体进行介绍说明。
相关技术中的激光器模组的截面结构如图29所示，包括发光芯片41、模块底板43、电路层44、焊料层45以及模组底板42。X1为发光芯片的散热路径，能够看出，由于电路层44以及焊料层45通常为导热性能较差的材料，芯片的热量无法有效通过散热路径释放。
鉴于上述技术问题，在本申请又一种实施例中，提供了一种激光器模组，如图30至图32所示(图30为激光器模组的3D视图，图31为激光器模组出光方向的俯视图，图32为图31实施例的激光器模组按照虚线L1切割的截面图)，激光器模组包括至少一个激光器1以及底板2，其中：
激光器1包括发光芯片11、基板12以及至少一个引脚13，发光芯片11位于基板12的一侧，引脚13位于激光器1垂直于基板12平面的至少一个侧面并与发光芯片11电连接。
在一些实施例中，底板2与基板12均为金属底板，发光芯片11焊接至基板12上。
在一些实施例中，发光芯片11为半导体发光芯片，包括发光元件，发光元件通过引脚13接收来自外界的电信号并向外界发射激光，其出光方向为远离基板12的方向。
在一些实施例中，如图32所示，激光器1还包括封装框体10，封装框体10与基板12共同构成容纳发光芯片11的密闭空间。可选地，封装框体10均可以呈方环状。每个封装框体10在基板12上的正投影可以均呈长方形或者大致呈长方形。如该正投影可以呈圆角长方形或倒角长方形。圆角长方形也即是将长方形的角更改为圆角所得的形状，倒角长方形也即是将长方形的角更改为倒角所得的形状。
底板2的一侧包括焊接部21以及至少一个凹槽22，一个激光器1的至少部分基板12设置于一个凹槽22中，引脚13与焊接部21焊接。
在一些实施例中，凹槽22与基板12的尺寸相匹配，凹槽22的长度和宽度可略大于基板12的长度和宽度，也可以在基板12嵌合进凹槽22后，使基板12的外侧壁与凹槽22的内侧壁相接触。凹槽22的深度可以根据不同实施例作对应设置，在一些实施例中，使基板12厚度的1/2位于凹槽22外部即可。
在一些实施例中，在基板12嵌合进凹槽22后，引脚13可以与焊接部21直接接触，也可以通过焊料接触，可选地，引脚13与焊接部21的焊接为铅焊焊接或锡焊焊接，本申请其他实施例中没有特殊提及的焊接方式均可参考此处，不再赘述。
在一些实施例中，底板2内部设有控制电路，焊接部21在底板2内部与控制电路电连接，从而构成控制电路、焊接部、引脚、发光芯片的电连接回路。本申请实施例的重点为激光器的封装结构，对其内部的控制电路的结构不作限定。
本申请实施例通过设置凹槽，能够使激光器嵌合至底板上，并通过两侧的引脚与底板进行焊接，能够在取消激光器与底板之间的焊料的基础上，实现激光器与底板固定且电连接，同时，发光芯片的散热路径X1上只包括底板2与基板12，能够提升激光器的散热效果，保证激光器的发光效率。并且，相关技术中通常会将发光芯片的电路走线设置在激光器底部，在将底部与底板焊接的同时起到电连接的作用，而电路走线则会进一步导致散热效果不好，本申请实施例则将电连接回路设置在激光器的侧面，一个激光器在底板上只需焊接几个点即可固定，简化激光器内部电路结构以及焊接工艺的同时，进一步提升激光器的散热效果。
在一些实施例中，激光器1不包括引脚，发光芯片11与底板2直接电连接。在该情况下，参见图33，封装框体10为陶瓷材料，底板2为铜材料，封装框体10与底板2密封焊接形成容置腔。容置腔用于容纳发光芯片11和保护器件5，容置腔背离底板2的开口处通过蓝宝石密封玻璃封闭。蓝宝石密封玻璃背离底板2的一侧设置一体化的准直透镜组。容置腔内部走线与发光芯片11和保护器件5的金线连接，再与底板2上的导电图案区域连通。
需要说明的是，本申请图30至图32所示的实施例中，一个激光器模组包括两个激光器，但在实施时，激光器可以为一个或多个，且该多个激光器可以沿第一方向依次排布，本领域技术人员能够根据本申请实施例公开的内容，在不付出创造性劳动的基础上实施一个或多个激光器的实施例，均在本申请的保护范围之内。本申请其他附图同理，不再赘述。
本申请实施例中的激光器1可以为单色激光器，或者也可以为多色激光器。单色激光器也即是仅能发出一种颜色的激光的激光器，多色激光器也即是能发出多种颜色的激光的激光器。若激光器1为单色激光器，则不同的激光器1可以用于发出不同颜色的激光，或者也可以均用于发出同一颜色的激光，本申请实施例不做限定。
示例地，如图31所示，激光器1可以包括第一激光器和第二激光器，该第一激光器可以为图31中位于左侧的激光器，第二激光器可以为图31中位于右侧的激光器。该第一激光器可以包括多个发光芯片，第二激光器也可以包括多个发光芯片。第一激光器中多个发光芯片可以均用于发出红色激光，第二激光器中多个发光芯片可以部分用于发出蓝色激光，另一部分用于发出绿色激光。示例地，激光器1还可以包括第一激光器、第二激光器以及第三激光器，第一激光器、第二激光器以及第三激光器沿第一方向依次排布。第一激光器、第二激光器以及第三激光器均可以包括多个发光芯片。第一激光器中多个发光芯片可以均用于发出红色激光，第二激光器中多个发光芯片可以均用于发出蓝色激光，第三激光器中多个发光芯片可以均用于发出绿色激光。
在一些实施例中，每个激光器1中的多个发光芯片11发出的激光的慢轴可以均平行发光芯片11的排布方向。需要说明的是，激光在不同的光矢量方向上的传输速度会存在差异，传输速度快的光矢量方向为快轴，传播速度慢的光矢量方向为慢轴，快轴垂直于慢轴。快轴可以垂直于发光芯片11的表面，慢轴平行于发光芯片11的表面。激光在快轴上的发散角度大于在慢轴上的发散角度，如在快轴上的发散角基本是在慢轴上的发散角度的3倍以上。发光芯片11以发出的激光的慢轴作为排布方向进行排布。由于该方向上激光的发散角度较小，故在避免相邻发光芯片11发出的激光干扰重叠的基础上，发光芯片11之间的距离可以较小，发光芯片11的设置密度可以较大，有利于激光器的小型化。可选地，激光器中的多个发光芯片11也可以阵列排布，排成多行多列，本申请实施例不做限定。
在一些实施例中，每个激光器可以呈长条状，每个激光器在基板上的正投影可以大致呈长方形。该长方形的宽度方向可以平行于第一方向，长度方向可以平行于第二方向。或者，也可以该长方形的宽度方向平行于第二方向，宽度方向平行于第一方向。
需要说明的是，本申请图30至图32所示的实施例中，一个激光器包括两个发光芯片，但在实施时，每个激光器可以包括一个或多个的发光芯片，且该多个发光芯片可以沿第二方向依次排布，本领域技术人员能够根据本申请实施例公开的内容，在不付出创造性劳动的基础上实施每个激光器包括一个或多个的发光芯片实施例，均在本申请的保护范围之内。本申请其他附图同理，不再赘述。在一些实施例中，基板12为无氧铜基板。
无氧铜基板的导热系数较高，能够达到400W/mK，具有较好的散热效果，能够进一步帮助发光芯片模块散热。无氧铜虽然在理论上为不含氧也不含任何脱氧剂残留物的纯铜，但实际上还是含有非常微量氧和一些杂质，实施时，氧的含量不大于0.003％，杂质总含量不大于0.05％，铜的纯度大于99.95％的材料均可用于无氧铜基板。
在一些实施例中，上述无氧铜基板还包括镍镀层或金镀层，能够提升与无氧铜基板与其他部件焊接处的结构强度。
在一些实施例中，如图34所示，基板12远离发光芯片11的一侧与凹槽22底部接触，能够增加热量的传输面积，进一步提升散热效果。
在一些实施例中，如图35或图36所示，在基板12远离发光芯片11的一侧与凹槽22底部接触的同时，底板2在凹槽22底部还包括第一嵌合部221，基板12在远离发光芯片11的一侧包括第二嵌合部111，第一嵌合部221与第二嵌合部111形成嵌合结构。其中，在如图35所示的实施例中，第一嵌合部221为凸起部，第二嵌合部111为凹进部。在如图36所示的实施例中，第一嵌合部221为凹进部，第二嵌合部111为凸起部。
通过设置嵌合部，能够使激光器1与底板2的结合更加紧密牢固，保证激光器模组的整体结构强度。
在一些实施例中，第一嵌合部221以及第二嵌合部111的形状不限，在一些实施例中，以图37所示的底板1为例，第一嵌合部221的形状为X型，第二嵌合部111的形状与第一嵌合部221对应，同样为X型。第一嵌合部221与第二嵌合部111的尺寸相匹配，在第一嵌合部221与第二嵌合部111形成嵌合结构后，使第一嵌合部221的外侧壁/内侧壁与第二嵌合部111的外侧壁/内侧壁相接触，同时使第一嵌合部221的顶部/底部与第二嵌合部111的顶部/底部相接触。
在一些实施例中，如图38所示，凹槽22贯穿底板2。
实施时，整个激光器模组会设置于散热板上，如图39所示，底板2远离激光器1的一侧与外设散热板接触。设置贯穿的凹槽22能够简化底板2的制造工艺，同时还能够通过外设的散热板提升激光器的散热效果。
在一些实施例中，当凹槽22贯穿底板2，为了保证激光器1的散热效果，底板2的厚度较小。
在一些实施例中，如图40所示，基板12通过贯穿底板2的凹槽22与散热板3接触，发光芯片11的散热路径X1上只包括基板12与散热板3，进一步提升了激光器的散热效果。
在一些实施例中，激光器1的封装框体如图41与图42所示，包括框体14，框体14与基板12连接并位于基板12与发光芯片11相同的一侧，框体14围绕发光芯片11垂直于基板12平面的四个侧面设置。
框体14包括金属导电层141，发光芯片11以及引脚13均与金属导电层141电连接。
相关技术中通常会将发光芯片11的电路走线设置在激光器底部，即基板中12，在将底部与底板焊接的同时起到电连接的作用，而电路走线则会进一步导致散热效果不好，本申请实施例则将电连接通路设置在激光器的侧面，结构简单，简化激光器内部电路结构的同时，进一步提升激光器的散热效果。
在一些实施例中，如图41所示，发光芯片11在激光器内部通过引线15与框体14的金属导电层141电连接，引脚13则通过焊接的方式与框体14的金属导电层141电连接，实现发光芯片11与引脚13的电连接通路。框体14可以仅在部分区域包括金属导电层141，也可以在全部区域均设置金属导电层141，此处不作限定。
在一些实施例中，金属导电层141为沉积的钨浆层。
在一些实施例中，如图41所示，激光器的封装框体还可以包括玻璃盖板16以及准直透镜17，玻璃盖板16与准直透镜17可以为蓝宝石盖板与蓝宝石透镜，准直透镜17的发散角小于1°，偏角小于0.8°，实现对发光芯片11出射光线的准直。
在一些实施例中，框体14与基板12以及玻璃盖板16之间为金锡焊焊接，保证激光器的封装的气密性。
玻璃盖板16位于框体14远离基板12的一侧，用于密封框体14远离基板12的一侧的开口，以与基板12和框体14共同围成密闭腔体。可选地，激光器1也可以不包括玻璃盖板16，而由准直透镜17直接与框体14远离基板12的表面固定。如此，准直透镜17与框体14和基板12共同围成密闭腔体。
准直透镜17位于玻璃盖板16远离基板12的一侧。本申请实施例中每个准直透镜17可以一体成型。示例地，准直透镜17大致呈板状，该准直透镜17靠近基板12的一面为平面，远离基板12的一面具有一个或多个凸弧面，该多个凸弧面中每个凸弧面所在的部分均为一个准直微透镜，准直微透镜与该多个发光芯片11一一对应。
在一些实施例中，如图43所示，激光器1的封装框体还包括一体化透镜18，一体化透镜18包括透镜部181与侧壁部182，一体化透镜18与框体14连接，透镜部181位于发光芯片11远离基板12的一侧，侧壁部182围绕发光芯片11垂直于基板12平面的四个侧面设置。
一体化透镜18与基板12以及框体14共同构成容纳发光芯片11的密闭腔体。
相比于图41所示的实施例，上述实施例中的一体化透镜18能够在保证激光器封装气密性的同时减少封装工序，直接将一体化透镜18焊接至框体14上即可，减小了工艺难度，降低了生产制造成本。
在一些实施例中，一体化透镜18的透镜部181靠近基板12的一面为平面，远离基板12的一面具有一个或多个凸弧面，该多个凸弧面中每个凸弧面所在的部分均为一个准直微透镜，准直微透镜与该多个发光芯片11一一对应。
在一些实施例中，一体化透镜18在制造时为一体成型的，将其分为透镜部181与侧壁部182仅用于清晰描述一体化透镜18的结构，并非表示一体化透镜18为多个部分拼接而成。
在一些实施例中，上述一体化透镜18为蓝宝石一体化透镜，透镜部181发散角小于1°，偏角小于0.8°，实现对发光芯片11出射光线的准直。
在一些实施例中，框体14与一体化透镜18之间为金锡焊焊接，保证激光器的封装的气密性。
在一些实施例中，为防止杂散光在侧壁透出，激光器11还包括用于吸收杂散光的光吸收膜，光吸收膜贴合一体化透镜18的四个内侧壁设置。该光吸收膜为不透光的材料，优选为铝模。
在一些实施例中，框体14包括氧化铝框体，氧化铝强度及化学稳定性高，且原料来源丰富，适用于制造不同形状的框体。氧化铝框体与基板12的连接面包括金属镀膜，金属镀膜用于提升氧化铝框体与其他部件焊接时的牢固程度以及导热性能。在一些实施例中，氧化铝框体14与上述玻璃盖板16或一体化透镜18的连接面也包括金属镀膜。
在一些实施例中，激光器1如图44与图45所示(图42为激光器出光方向的俯视图，图43为图42实施例的激光器按照虚线L2切割的截面图)，每个激光器1还可以包括热沉191以及反射棱镜192。热沉191和反射棱镜192可以均与激光器模组中的多个发光芯片11一一对应。每个发光芯片11位于对应的热沉191上，热沉191用于辅助对应的发光芯片11散热。热沉191的材料可以包括陶瓷。每个反射棱镜192位于对应的发光芯片11的出光侧。发光芯片11可以向对应的反射棱镜192发出激光，反射棱镜192可以沿远离基板12的方向(如X2方向)，将该激光反射向封装框体10。该封装框体可以如图41所示包括玻璃盖板16以及准直透镜17，也可以如图43所示包括一体化透镜18，反射棱镜192可以沿远离基板12的 方向，将激光反射向该发光芯片11对应的准直透镜17或一体化透镜18，进而该激光可以被该透镜准直后出射。
在一些实施例中，激光器模组如图46与图47所示，(图46为激光器出光方向的俯视图，图47为图46实施例的激光器按照虚线L3切割的截面图)，每个激光器1均包括上述实施例中的热沉191以及反射棱镜192。
在一些实施例中，如图48以及图49所示，激光器模组包括至少两个激光器1，每个激光器1均包括一个正极引脚131与一个负极引脚132，正极引脚131与发光芯片11的正极电连接，负极引脚132与发光芯片11的负极电连接。
焊接部21包括正极焊接部211以及负极焊接部212，正极引脚131与正极焊接部211焊接，负极引脚132与负极焊接部212焊接。
在一些实施例中，正极焊接部211与正极引脚131一一对应，同样的，负极焊接部212与负极引脚132也是一一对应，一个激光器模组包括N个激光器1，就包括N个正极焊接部211以及N个负极焊接部212，并且，如图48以及图49所示，N个正极焊接部211位于相同的一侧，N个负极焊接部212则位于另外相同的一侧。
底板2还包括控制电路、公共正极231与公共负极231，控制电路位于底板2内部，公共正极231与公共负极232位于基板12与焊接部21相同的一侧，公共正极231在底板2内部通过印刷线路与控制电路以及至少两个正极焊接部211电连接，公共负极232在底板2内部通过印刷线路与控制电路以及至少两个负极焊接部212电连接。
通过设置公共正极与公共负极，构成了控制电路、公共电极、焊接部、引脚、发光芯片的电连接回路，简化了激光器模组的走线以及电连接方式，控制电路通过向公共负极与公共正极提供电信号，即可控制激光器模组中所有激光器发光。
在一些实施例中，当一个激光器模组中激光器的数量不多的情况下，例如附图所示的两个，或者三到四个，底板2仅包括一个公共正极231与一个公共负极231即可，且公共正极231连接所有的正极焊接部211，公共负极232连接所有的负极焊接部212，如图49所示。如果一个激光器模组中激光器的数量较多，例如八个，此时底板2可以包括两个公共正极231与两个公共负极231，每个公共正极231连接四个正极焊接部211，每个公共负极232连接四个负极焊接部212。其他数量的激光器的实施例同理，不过多赘述。
图48以及图49示出的公共正极231与公共负极232仅为示例性，实施时，公共正极231与公共负极232可设置于底板2的内部，从而在底板2的外部无明显结构特征，也在本申请的保护范围之内。
在一些实施例中，激光器模组还可以包括多个未在附图中示出的供电引脚，该多个供电引脚位于底板上，可以位于底板底部或侧面，供电引脚与底板的内部的控制电路连接，并用于连通外部电源，进而实现从外部电源、控制电路、公共电极、引脚、到发光芯片的电连接回路，进而触发各个发光芯片发出激光。该多个供电引脚可以包括多个正极供电引脚和至少一个负极供电引脚。正极供电引脚用于与外部电源的正极连接，负极供电引脚用于与外部电源的负极连接。
本申请中术语“A和B的至少一种”以及“A和/或B”，仅仅是一种描述关联对象的关联关系，表示可以存在三种关系，分别为单独存在A，同时存在A和B，单独存在B这三种情况。术语“A、B和C的至少一种”表示可以存在七种关系，可以表示：单独存在A，单独存在B，单独存在C，同时存在A和B，同时存在A和C，同时存在C和B，同时存在A、B和C这七种情况。在本申请实施例中，术语“第一”和“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。术语“至少一个”指的是一个或多个，术语“多个”指两个或两个以上，除非另有明确的限定。
在通篇说明书及权利要求当中所提及的“包含”和“包括”为一开放式用语，故应解释成“包含但不限定于”。“大致”是指在可接受的误差范围内，本领域技术人员能够在一定误差范围内解决所述技术问题，基本达到所述技术效果。在说明书及权利要求当中使用了某些词汇来指称特定组件，本领域技术人员应可理解，制造商可能会用不同名词来称呼同一个组件。本说明书及权利要求并不以名称的差异来作为区分组件的方式，而是以组件在功能上的差异来作为区分的准则。
以上所述仅为本申请的可选实施例，并不用以限制本申请，凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (23)

  1. 一种激光器模组，其特征在于，包括激光器，所述激光器包括框体、基板、热沉、发光芯片和保护器件；
    所述框体和所述热沉均固定于所述基板上，所述热沉、所述发光芯片和所述保护器件均位于所述框体的内部；
    所述发光芯片和所述保护器件均固定于所述热沉上，所述发光芯片和所述保护器件在所述热沉的长度方向上具有间距，在所述热沉的长度方向上，所述发光芯片的正投影和所述保护器件的正投影部分重叠或者相间隔。
  2. 根据权利要求1所述的激光器模组，其特征在于，所述热沉包括由上到下依次排布的金锡层、金层和热沉基板；
    所述金锡层的宽度小于所述金层的宽度，所述金层的宽度小于所述热沉基板的宽度；
    所述发光芯片和所述保护器件均小于所述金锡层的宽度，且所述发光芯片和所述保护器件焊接在所述金锡层上。
  3. 根据权利要求2所述的激光器模组，其特征在于，所述金锡层为一体式金锡层。
  4. 根据权利要求3所述的激光器模组，其特征在于，所述金锡层呈长条形，且沿着所述热沉的长度方向延伸；所述发光芯片和所述保护器件沿所述金锡层的长度方向依次排布；或者，
    所述金锡层呈L形，所述金锡层包括第一区域和第二区域，所述第一区域呈长条状，且沿所述热沉的长度方向延伸，所述第二区域位于所述第一区域的一侧；所述发光芯片位于所述第一区域，所述保护器件的一部分位于所述第二区域，另一部分位于第一区域。
  5. 根据权利要求2所述的激光器模组，其特征在于，所述金锡层包括分隔的第一金锡层和第二金锡层，所述第一金锡层和所述第二金锡层在所述热沉的长度方向上具有间距，且所述第一金锡层和所述第二金锡层沿所述热沉的长度方向上的投影至少部分重合；
    所述发光芯片位于所述第一金锡层，所述保护器件位于所述第二金锡层。
  6. 根据权利要求1所述的激光器模组，其特征在于，所述发光芯片和所述保护器件在所述热沉的长度方向的投影部分重合，发光芯片在热沉的长度方向上具有第一轴线，保护器件在热沉的长度方向上具有第二轴线，第一轴线和第二轴线之间的距离不大于0.35mm。
  7. 根据权利要求6所述的激光器模组，其特征在于，所述发光芯片在所述热沉的长度方向的投影至少部分落在所述保护器件在所述热沉的长度方向的投影上；或者，
    所述保护器件在所述热沉的长度方向的投影至少部分落在所述发光芯片在所述热沉的长度方向的投影上。
  8. 根据权利要求1所述的激光器模组，其特征在于，所述基板为金刚石铜结构件，所述热沉为金刚石结构件，所述热沉的厚度范围为：0.2毫米至0.4毫米。
  9. 根据权利要求8所述的激光器模组，其特征在于，所述激光器还包括：位于所述金刚石铜一侧的反射棱镜，各个所述反射棱镜均与所述基板固定连接，且所述反射棱镜与所述发光芯片一一对应，每个所述发光芯片的出光面均朝向对应的反射棱镜的反射面；
    在每个所述发光芯片的光轴所在方向上，所述发光芯片与所述反射棱镜的反射面之间的距离范围为：0.3毫米至0.5毫米；
    所述发光芯片朝向所述反射棱镜的端部凸出于所述热沉，且在所述发光芯片的光轴方向上，所述发光芯片相对于所述热沉凸出的长度范围为：5微米至10微米。
  10. 根据权利要求8所述的激光器模组，其特征在于，所述激光器还包括：位于所述热沉背离所述基板的一侧的焊料层，所述热沉通过所述焊料层与对应的发光芯片固定连接。
  11. 根据权利要求10所述的激光器模组，其特征在于，所述激光器还包括：位于所述焊料层与所述热沉之间的第一金属层，以及位于所述热沉与所述基板之间的第二金属层。
  12. 根据权利要求11所述的激光器模组，其特征在于，所述第一金属层和所述第二金属层均包括：层叠设置的钛层、铂层和金层，且所述第一金属层和所述第二金属层中的钛层均与所述热沉的表面固定连接；
    其中，所述钛层的厚度范围为0.04微米至0.08微米，所述铂层的厚度范围为0.1微米至0.3微米，所述金层的厚度范围为0.4微米至0.8微米。
  13. 根据权利要求1所述的激光器模组，其特征在于，还包括底板；
    所述激光器还包括引脚，所述发光芯片位于所述基板的一侧，所述引脚位于所述激光器垂直于所述基板平面的至少一个侧面并与所述发光芯片电连接；所述底板的一侧包括焊接部以及至少一个凹槽，一个所述激光器的至少部分基板位于一个所述凹槽中，所述引脚与所述焊接部焊接；或者，
    所述发光芯片与所述底板直接电连接。
  14. 根据权利要求13所述的激光器模组，其中，所述基板远离所述发光芯片的一侧与所述凹槽底部接触。
  15. 根据权利要求14所述的激光器模组，其中，所述底板在所述凹槽底部还包括第一嵌合部，所述基板在远离所述发光芯片的一侧包括第二嵌合部，所述第一嵌合部与所述第二嵌合部形成嵌合结构，其中，所述第一嵌合部为凸起部或凹进部中的一个，所述第二嵌合部为所述凸起部或所述凹进部中的另外一个。
  16. 根据权利要求13所述的激光器模组，其中，所述凹槽贯穿所述底板。
  17. 根据权利要求13所述的激光器模组，其中，所述激光器还包括一体化透镜，所述一体化透镜包括透镜部与侧壁部，所述一体化透镜与所述框体连接，所述透镜部位于所述发光芯片远离所述基板的一侧，所述侧壁部围绕所述发光芯片垂直于所述基板平面的四个侧面设置；
    所述一体化透镜与所述基板以及所述框体共同构成容纳所述发光芯片的密闭腔体。
  18. 根据权利要求13所述的激光器模组，其中，每个所述激光器均包括正极引脚与负极引脚，所述正极引脚与所述发光芯片的正极电连接，所述负极引脚与所述发光芯片的负极电连接；
    所述焊接部包括正极焊接部以及负极焊接部，所述正极引脚与所述正极焊接部焊接，所述负极引脚与所述负极焊接部焊接；
    所述底板还包括控制电路、公共正极与公共负极，所述控制电路位于所述底板内部，所述公共正极与所述公共负极位于所述基板与所述焊接部相同的一侧，所述公共正极与所述控制电路以及所述正极焊接部电连接，所述公共负极与所述控制电路以及所述负极焊接部电连接。
  19. 一种激光器模组，其特征在于，包括激光器，所述激光器包括框体、基板、热沉、发光芯片和保护器件；
    所述基板为金刚石铜结构件，所述热沉为金刚石结构件，所述热沉的厚度范围为：0.2毫米至0.4毫米；
    所述框体和所述热沉均固定于所述基板上，所述热沉、所述发光芯片和所述保护器件均位于所述框体的内部；
    所述发光芯片和所述保护器件均固定于所述热沉上。
  20. 根据权利要求19所述的激光器模组，其特征在于，所述激光器还包括：位于所述金刚石铜一侧的反射棱镜，各个所述反射棱镜均与所述基板固定连接，且所述反射棱镜与所述发光芯片一一对应，每个所述发光芯片的出光面均朝向对应的反射棱镜的反射面；
    在每个所述发光芯片的光轴所在方向上，所述发光芯片与所述反射棱镜的反射面之间的距离范围为：0.3毫米至0.5毫米；
    所述发光芯片朝向所述反射棱镜的端部凸出于所述热沉，且在所述发光芯片的光轴方向上，所述发光芯片相对于所述热沉凸出的长度范围为：5微米至10微米。
  21. 根据权利要求19所述的激光器模组，其特征在于，所述激光器还包括：位于所述热沉背离所述基板的一侧的焊料层，所述热沉通过所述焊料层与对应的发光芯片固定连接。
  22. 根据权利要求21所述的激光器模组，其特征在于，所述激光器还包括：位于所述焊料层与所述热沉之间的第一金属层，以及位于所述热沉与所述基板之间的第二金属层。
  23. 根据权利要求22所述的激光器模组，其特征在于，所述第一金属层和所述第二金属层均包括：层叠设置的钛层、铂层和金层，且所述第一金属层和所述第二金属层中的钛层均与所述热沉的表面固定连接；
    其中，所述钛层的厚度范围为0.04微米至0.08微米，所述铂层的厚度范围为0.1微米至0.3微米，所述金层的厚度范围为0.4微米至0.8微米。
PCT/CN2024/096160 2023-06-16 2024-05-29 激光器模组 Ceased WO2024255600A1 (zh)

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